• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.44-44
• /
• 2003

Growth mechanism of carbon nanotubes(CNTs) synthesized by chemical vapor deposition is abided by two growth modes. These growth modes are classified by the position of activated catalytic metal particle in the CNTs. Growth mode can be also affected by interaction between substrate and catalytic metal and induced energy such as thermal and plasma. We studied the reaction of catalytic metal to the substrate and growth mode of CNTs. Various substrates such as Si(100), graphite plate, coming glass, sapphire and AAO membrane are used to study the relation between catalytic metal and substrate in the synthesis of CNTs. For catalytic metal, thin film was deposited on various substrate via sputtering technique with a thickness of ∼20nm and magnetic fluids with none-sized particles were dispersed on AAO membrane. After laying process on AAO membrane, it was dried at 80$^{\circ}C$ for 8 hour. Synthesizing of CNTs was carried out at 900$^{\circ}C$ in NH3/C2H2 mixture gases flow for 10minutes.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.291.2-291.2
• /
• 2013

Growth behavior of b-Ga2O3 nanowires (NWs) on sapphire(0001) substrates during radio-frequency magnetron sputtering is reported. Upon fabrication, flat thin films grew initially, subsequent to which, NW bundles were formed on the surface of thin film with increasing film thickness. This transition of the growth mode occurred only at temperatures greater than ${\sim}450^{\circ}C$. The b-Ga2O3 NWs were grown through the self-catalytic vapor-liquid-solid mechanism with self-assembled Ga seeds. Secondary growth of NWs, which occurred from the sides of primary NWs resulting in branched NW structures, was also observed. Finally, the room temperature photoluminescence properties of as-grown and annealed b-Ga2O3 NW samples were investigated.

• Proceedings of the Korean Society For Composite Materials Conference
• /
• 2003.04a
• /
• pp.173-175
• /
• 2003

At the low temperature of $950^{\circ}C$ the $\mu\textrm{m}$-sized whisker growth during the catalytic CVD of pyrolytic carbon from methane with $H_2$- and Ar-gas on quartz substrate with NiO powder was found in this work. In the preliminary study it was observed from pure methane pyrolysis without catalyst at the high temperature $1500~1700^{\circ}C$. If the growth whisker should be stopped at initial stage, about 20 min. of the methane pyrolysis, it would be nanosized whisker growth. The screw growth mechanism and unique mechanical properties of whisker for composites were also recognized. If the pyrolysis would be continued, we could found also spiral growth of whistlers with diameter of about 1, 5 mm. The large length of whisker was about 10 cm in 20 minute.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.12
• /
• pp.649-653
• /
• 2000

We have grown carbon nanotubes by thermal chemical vapor deposition of $C_{2}H_{2}$ on catalytic metal deposited on silicon oxide substrates. Highly purified carbon nanotubes are uniformly grown on a large area of the silicon oxide substrates. It is observed that surface modification of catalytic metals deposited on substrates by either etching with dipping in a HF solution and/or $NH_{3}$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_{2}H_{2}$ gas. The diameters of carbon naotubes could be controlled by applying the different catalytic metals.

• Bulletin of the Korean Chemical Society
• /
• v.22 no.11
• /
• pp.1192-1196
• /
• 2001

A diaphorase enzyme electrode for the catalytic reduction of NAD+ , the oxidized form of nicotinamide adenine dinucleotide, has been prepared. The enzyme layer grew spontaneously over an aminoethanethiol self assembled monolayer on a go ld plate electrode. The growth was accomplished by simply dipping the electrode covered by the aminoethanethiol monolayer into a solution containing both glutaraldehyde and diaphorase. We suggested that the glutaraldehyde as a cross-linking reagent was attached to the amino groups of the aminoethanethiol monolayer and the diaphorase enzyme molecules were bound to free aldehyde groups of the glutaraldehyde. Further attachments of the enzyme molecules over the bound enzyme molecules continued with the bridging of the glutaraldehyde. In frequency measurements with a quartz crystal microbalance, the frequency decrease was much more than it was for that of the enzyme monolayer formation, and an enzyme layer thicker than a monolayer was formed. The modified electrode was employed to reduce NAD+ , using diffusional methyl viologen as an electron transfer mediator. The NAD+ was electrocatalytically reduced, and the catalytic current was almost equivalent to that with the multilayered electrode of ten enzyme layers.

• Carbon letters
• /
• v.6 no.2
• /
• pp.101-105
• /
• 2005

Like bamboo-sprouts after rains, numerous sub${\mu}m$-sized pyrocarbon whiskers growth on the Mullite ($3Al_2O_3{\cdot}2H_2O$) substrate could be observed through a looking glass during methane pyrolysis at the temperature of $1050^{\circ}C$ in this study. If the surface of substrate would be scrubbed strongly with iron metals, then finely sticked iron particles were more effective catalytic for nm-sized whisker growth. Numerous fine flakes of pyrolytic carbon were hanging by invisible nm-whiskers as like as small spiders hanging by a spiderweb. This is the identification of nm-sized whisker growth. Therefore if the pyrolysis would be stopped at the initial stage of the whisker growth, the primary lengthening growth was nm-sized whisker. So could we vary arbitrarily sizes of whisker from nm- to ${\mu}m$-sizes. But ${\mu}m$- and nm-whiskers grown with the different growth mechanism; the former was straight and the latter has twigs, The lengthening growth of whisker was depended on the flow pattern pyrolysis species on the active sites of substrate and on the growth duration. We could obtained straight whisker length of 10~20 ${\mu}m$/min during the primary growth and laboratory spiral whisker of 30~40 ${\mu}m$-diameter/hr during the secondary growth.

• Journal of the Korean Ceramic Society
• /
• v.41 no.3
• /
• pp.247-252
• /
• 2004

노튜브의 길이는 급격히 증가하였지만 촉매금속의 적층방법에 따른 탄소나노튜브의 성장 형태는 큰 차이가 없었다. 특히, ICBD 방법에 의해 Ni 촉매금속을 증착한 경우 다른 방법에 비하여 직선적인 탄소나노튜브가 관찰되었다. ^x Carbon nanotubes were grown on SiO$_2$/Si substrates by applying $C_2$H$_2$ gas through chemical vapor deposition process. It was found that carbon nanotubes were grown successfully on the substrates with catalytic films under 20 $\AA$ total thickness. The increase in reaction temperature from 50$0^{\circ}C$ to 80$0^{\circ}C$ resulted in longer carbon nanotube, but there was no clear tendencies with different types of catalytic layers. It was evident that carbon nanotubes became more straight on the substrate with Ni catalytic film produced by ICBD method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.5
• /
• pp.418-423
• /
• 2010

Carbon nanotubes (CNTs) were synthesized by Fe-catalytic chemical vapor deposition (CVD) method about $800^{\circ}C$. The influence of process parameters such as pretreatment conditions, gas flow ratio, processing time, etc on the growth of CNTs was investigated by field emission scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. Ammonia was added to acetylene source gas before and during the CNT growth. Different types of CNTs formed depending upon the processing condition. It was found that ammonia prevented amorphous carbons from adsorbing to the outer wall of CNT, resulting in purification of CNTs during CNT growth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.6
• /
• pp.501-506
• /
• 2006

Carbon nanotubes (CNTs) were grown with a microwave plasma enhanced chemical vapor deposition (MPECVD) method, which has been regarded as one of the most promising candidates for the synthesis of CNTs due to the vertical alignment, the low temperature and the large area growth. MPECVD used methane ($CH_4$) and hydrogen ($H_2$) gas for the growth of CNTs. 10 nm thick Ni catalytic layer were deposited on the Ti coated Si substrate by RF magnetron sputtering method. In this work, the pretreatment was that the Ni catalytic layer in different microwave power (600, 700, and 800 W). After that, CNTs deposited on different pressures (8, 12, 16, and 24 Torr) and grown same microwave power (800 W). SEM (Scanning electron microscopy) images showed Ni catalytic layer diameter and density variations were dependent with their pretreatment conditions. Raman spectroscopy of CNTs shows that $I_D/I_G$ ratios and G-peak positions vary with pretreatment conditions.

• Korean Journal of Materials Research
• /
• v.24 no.12
• /
• pp.694-699
• /
• 2014

We report the chemical vapor deposition growth characteristics of graphene on various catalytic metal substrates such as Ni, Fe, Ag, Au, and Pt. 50-nm-thick metal films were deposited on $SiO_2/Si$ substrates using dc magnetron sputtering. Graphene was synthesized on the metal/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90 % Ar (99 SCCM) using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The highest quality of graphene film was achieved on Ni and Fe substrates at $900^{\circ}C$ and 500 W of ICP power. Ni substrate seemed to be the best catalytic material among the tested materials for graphene growth because it required the lowest growth temperature ($600^{\circ}C$) as well as showing a low ICP power of 200W. Graphene films were successfully grown on Ag, Au, and Pt substrates as well. Graphene was formed on Pt substrate within 2 sec, while graphene film was achieved on Ni substrate over a period of 5 min of growth. These results can be understood as showing the direct CVD growth of graphene with a highly efficient catalytic reaction on the Pt surface.