• 제어로봇시스템학회논문지
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• 제11권3호
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• pp.222-227
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• 2005

Resolving the integer ambiguity of GPS carrier phase measurements is the most important routine in precise positioning. In this paper, success rate is analyzed when using baseline information in the process of determining attitude. The result is verified through the simulation. Determining the initial position for the ambiguity resolution is estimated by using code measurement and baseline constraint. Success rate is estimated using covariance of the formed initial position. UKF has been used to overcome the nonlinear baseline condition during the process so that the higher success rate has been obtained compared with the general attitude determination.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.297-298
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• 2011

Metal/poly (4,4'-aminotriphen-ylene hexafluoroisopropylidenediphthalimide) (TP6F PI)/metal structure exhibited an electrically volatile phase transition with high (OFF) or low (ON) resistive states when voltage between electrodes swept. Here, we demonstrate a noble set-up in which holes are injected by photoelectron emission process during the voltage sweep instead of direct charge carrier injection via metal electrode, which enables direct investigation into changed electronic structures of TP6F PI both in ON and OFF states using photoemission spectroscopy methods. In the I-V measurement, TP6F PI shows a non-volatile behavior. In spectroscopic results, this non-volatile behavior is leaded from the structural modification of the O=C double bond in phthalimide of TP6F PI by hole injection.

• 한국안전학회지
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• 제7권2호
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• pp.57-62
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• 1992

In this thesis, the electrification phenomenon was studied by measurement of charging current and discharging current in polymers when the carriers generated by corona discharge were supplied to the surface of polymers. Corona charging current of PVC, polar and noncrystalline polymer, was larger than that of nonpolar and amorphous polymers. Corona charging current on the specimen of naked upper surface (CIM) was larger than charging current on the specimen of electrode made. Carrier injection differed from interfacial phase of polymer surFace. The transfer phenomenon vaned with chemical structure of polymer and then the polar effect of PVC was remarkable because of large electron affinity of Cl. In the characteristics of discharging current of PVC, the abnormal current was observed. It was supposed that this phenomena presented the trap of injected carriers in PVC and that static electricity phenomenon was generated by trap.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2006년도 International Symposium on GPS/GNSS Vol.2
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• pp.23-26
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• 2006

Modernized GPS will have three frequencies modulated with three signals, which will be accessible to all users in the near future. This new frequency provides an opportunity to resolve the double differenced (DD) integer ambiguity very fast and with almost no baseline constraints. In order to study the performance of triple frequency system for Ambiguity Resolution (AR) over the medium baseline under different ionospheric levels, the Klobuchar Model was implemented and used in our triple simulation to generate the ionospheric delay. Furthermore, the White-Gaussian noise applying to distance-dependent parameters was added to the DD ionospheric delay. For medium baseline (defined as here 20 to 40kms), success rates of AR has been pretty improved. In this paper, the medium baseline AR strategies that take advantage of carrier phase measurement on the third frequency will be discussed.

• Current Photovoltaic Research
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• 제1권2호
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• pp.97-102
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• 2013

Aluminum-doped zinc oxide (AZO) thin films were prepared by dc magnetron sputtering at room temperature and the effect of heat treatment on the structural, electrical and optical properties of the films were examined. As the annealing temperature and time increased, the resistivity decreased and the transmittance improved. All AZO films had c-axis oriented (002) plane of ZnO, regardless of the annealing process employed. As the annealing temperature and time increased, the crystallinity of AZO thin films increased due to the formation of a new ZnO phase in which Al was substituted for Zn. However, at the high annealing temperature of $400^{\circ}C$, the resistivity of the films increased via separation of Zn and Al from ZnO phase due to their low melting points. X-ray diffraction, field emission scanning electron micrograph and Hall effect measurement confirmed the formation of uniformly distributed new grains of ZnO substituted with Al. The variation of Al contents in AZO films was shown to be the primary factor for the changes in resistivity and carrier concentration of the films.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• 한국측량학회지
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• 제25권4호
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• pp.319-325
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• 2007

GPS를 이용한 상대측위에 있어서 기선의 길이가 길어질수록 측위지점 사이의 상관관계 저하로 인하여 전리층 지연 효과와 같은 오차가 관측치내에 존재하는 문제가 여전히 남아있다. 본 연구에서는 중기선 이상의 상대측위에서 가장 큰 오차요인으로 알려져 있는 전리층 지연 효과를 통계적 모델을 이용하여 모델링하고, 이론적 경험적으로 가장 좋다고 알려져 있는 LAMBDA방법을 이용하여 모호정수를 결정하였다. 상시관측소데이터를 이용하여 통계적 모델을 경험적으로 Gauss-Markov 1차를 결정하였으며, 모델 파라미터인 상관시간(correlation time) 및 모델의 분산을 산출하였다. 최종적으로 개발된 알고리즘의 적용 및 정확도 분석을 위하여 상용소프트웨어 및 Bernese와 비교하였다.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2008년도 한국우주과학회보 제17권2호
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• pp.34.3-34.3
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• 2008

Relative navigation system is presented using measurements from a single-channel global positioning system (GPS) simulator. The objective of this study is to provide real-time relative navigation results as well as absolute navigation results for two formation flying satellites separated about 1km in low earth orbit. To improve the performance, more accurate dynamic model and modified relative measurement model are developed. This modified method prevents non-linearity of the measurement model from degrading precision by applying linearization about the states from absolute navigation algorithm not about a priori states. Furthermore, absolute states are obtained using ion-free GRAPHIC pseudo-ranges and precise relative states are provided using double differential carrier-phase data based on Extended Kalman Filter. The software-based simulation is performed and achieved meter-level precision for absolute navigation and millimeter-level precision for relative navigation. The absolute and relative accuracies at steady state are about 0.77m and 4mm respectively (3D, r.m.s.). In addition, Integer ambiguity algorithm (LAMBDA method) improves simulation performances.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.309-309
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• 2012

Heteroepitaxial growth remains as one of the continuously growing interests, because the heterogeneous crystallization on different substrates is a common feature in the fabrication processes of many semiconductor materials and devices, such as molecular beam epitaxy, pulsed laser deposition, sputtering, chemical bath deposition, chemical vapor deposition, hydrothermal synthesis, vapor phase transport and so on [1,2]. By using the R.F. sputtering system, ZnO thin films were deposited on graphene 4 and 6 mono layers, which is grown on 400 nm and 600 nm $SiO_2$ substrates, respectively. The ZnO thin layer was deposited at various temperatures by using a ZnO target. In this experimental, the working power and pressure were $3{\times}10^{-3}$ Torr and 50 W, respectively. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen and argon gas flows were controlled around 5 and 10 sccm by using a mass flow controller system, respectively. The structural properties of the samples were analyzed by XRD measurement. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system. The surface morphologies were observed using field emission scanning electron microscope (FE-SEM).