• Title/Summary/Keyword: Carrier state.

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Solid Dispersion as a Strategy to Improve Drug Bioavailability (고체분산체를 이용한 약물의 생체이용율 향상을 위한 전략)

  • Park, Jun-Hyung;Chun, Myung-Kwan;Cho, Hoon;Choi, Hoo-Kyun
    • KSBB Journal
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    • v.26 no.4
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    • pp.283-292
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    • 2011
  • Solid dispersion is one of well-established pharmaceutical techniques to improve the dissolution and consequent bioavailability of poorly water soluble drugs. It is defined as a dispersion of drug in an inert carrier matrix. Solid dispersions can be classified into three generations according to the carrier used in the system. First and second generations consist of crystalline and amorphous substances, respectively. Third generation carriers are surfactant, mixture of polymer and surfactants, and mixture of polymers. Solid dispersions can be generallyprepared by melting method and solvent method. While melting method requires high temperature to melt carrier and dissolve drug, solvent method utilizes solvent to dissolve the components. The improvement in dissolution through solid dispersions is attributed to reduction in drug particle size, improvement in wettability, and/or formation of amorphous state. The primary characteristics of solid dispersions, the presenceof drug in amorphous state, could be determined by differential scanning calorimetry (DSC), powder X-ray diffraction (PXRD), and fourier-transformed infrared spectroscopy (FTIR). In spite of the significant improvement in dissolution by solid dispersion technique, some drawbacks have limited the commercial application of solid dispersions. Thus, further studies should be conducted in a direction to improve the congeniality to commercialization.

Studies on Carrier-Free Silver-111 with Membrane Filters (막여과지에 의한 무단체 Ag-111에 관한 연구)

  • Jae, Won-Mok
    • Journal of the Korean Chemical Society
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    • v.17 no.5
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    • pp.319-323
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    • 1973
  • The state of carrier-free silver-111 has been studied by applying filtration method. The studies involved that the effects of pH and concentration of silver-111 in aqueous solution have been determined with membrane filters. The present studies revealed that the retainment of silver-111 on membrane filters followed Freundlish adsorption isotherm, and the adsorbed state of silver-111 was present in the form of AgOH. Also it was supposed that the formation of the non-adsorbed hydroxide of$Ag(OH)_{2}-$ may prohibit the existance of AgOH at higher pH, and it seems to be valid that the carrier-free silver-111 in aqueous solution exists in$Ag^+$state.

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Effect of Carrier Size on the Performance of a Three-Phase Circulating-Bed Biofilm Reactor for Removing Toluene in Gas Stream

  • Sang, Byoung-In;Yoo, Eui-Sun;Kim, Byung-J.;Rittmann, Bruce E.
    • Journal of Microbiology and Biotechnology
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    • v.18 no.6
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    • pp.1121-1129
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    • 2008
  • A series of steady-state and short-term experiments on a three-phase circulating-bed biofilm reactor (CBBR) for removing toluene from gas streams were conducted to investigate the effect of macroporous-carrier size (1-mm cubes versus 4-mm cubes, which have the same total surface area) on CBBR performance. Experimental conditions were identical, except for the carrier size. The CBBR with 1-mm carriers (the 1-mm CBBR) overcame the performance limitation observed with the CBBR with 4-mm carriers (the 4-mm CBBR): oxygen depletion inside the biofilm. The 1-mm CBBR consistently had the superior removal efficiencies of toluene and COD, higher than 93% for all, and the advantage was greatest for the highest toluene loading, $0.12\;M/m^2-day$. The 1-mm carriers achieved superior performance by minimizing the negative effects of oxygen depletion, because they had 4.7 to 6.8 times thinner biofilm depths. The 1-mm carriers continued to provide protection from excess biomass detachment and inhibition from toluene. Finally, the 1-mm CBBR achieved volumetric removal capacities up to 300 times greater than demonstrated by other biofilters treating toluene and related volatile hydrocarbons.

A STUDY ON THE PREVALENCE AND INTRA-ORAL DISTRIBUTION OF CANDIDA ALBICANS (캔디다 알비칸스의 구강내 빈도 및 분포도에 관한 연구)

  • Lee, Cheol-Gyu;Kim, Chang-Whe
    • The Journal of Korean Academy of Prosthodontics
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    • v.24 no.1
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    • pp.91-103
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    • 1986
  • Using imprint cultures and epithelial smears, the density and prevalence of colonization of oral mucosal sites and denture surfaces by Candida albicans has been determined in 28 healthy dentate subjects and 20 denture wearers. With questionnaire, oral and denture examination, the relationship between the carrier rates and several factors; DMFT, oral hygiene index, salivary pH & denture plaque score were studied. But these factors have not significant relationship to the carrier rates. Imprint culture appears to be sensitive technique for detecting candidal carriers and be useful for distinguishing between the healthy carrier state and candidal infection. Cigarette smokers had a significantly increased carrier state (P<0.05) compared with nonsmoker in male dentate subjects. Female were more frequent carriers than male in dentate and denture group, but these differences were not significant. In denture wearers, there was a higher density and frequency of candidal colonization of all mucosal sites sampled, compared with that of healthy dentate group especially anterior palate and posterior palate showed highly significant differences in frequency of candidal colonization (P<0.05). The distribution of Candida albicans is not uniform throughout the mouth. The tongue in the healthy dentate subjects and the impression surfaces of upper dentures are the primary oral reservoirs for the fungus. Overnight wearing of dentures was associated with increased density and frequency of candidal colonization and density.

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A study on the hot carrier induced performance degradation of RF NMOSFET′s (Hot carrier에 의한 RF NMOSFET의 성능저하에 관한 연구)

  • 김동욱;유종근;유현규;박종태
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.10
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    • pp.60-66
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    • 1998
  • The hot carrier induced performance degradation of 0.8${\mu}{\textrm}{m}$ RF NMOSFET has been investigated within the general framework of the degradation mechanism. The device degradation model of an unit finger gate MOSFET could be applied for the device degradation of the multi finger gate RF NMOSFET. The reduction of cut-off frequency and maximum frequency can be explained by the transconductance reduction and the drain output conductance increase, which are due to the interface state generation after the hot carrier stressing. From the correlation between hot carrier induced DC and RF performance degradation, we can predict the RF performance degradation just by the DC performance degradation measurement.

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The Present Status of Pumps Installed in the Large Merchant Ships (대형 상선에서의 펌프사용 현황)

  • Kim, You-Taek;Nam, Chung-Do;Lee, Young-Ho
    • The KSFM Journal of Fluid Machinery
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    • v.4 no.4 s.13
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    • pp.43-52
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    • 2001
  • Pumps arre used extensively for transporting fluid in many ships. However, the present state of pumps used in the large merchant ships has not been studied. In this paper, we have reported the general description of the operating pumps according to the different ship types(Bulk, Container, Car-Carrier, Tanker, LNG). Moreover, the pump total powers are compared with the main engine Normal Continuous Rating power and the pump total weights are also compared with the ship deadweight.

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The performance degradation of CMOS differential amplifiers due to hot carrier effects (Hot carrier 현상에 의한 CMOS 차동 증폭기의 성능 저하)

  • 박현진;유종근;정운달;박종태
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.7
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    • pp.23-29
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    • 1997
  • The performance degradation of CMOS differential amplifiers due to hot carrier effect has been measured and analyzed. Two-state CMOS amplifiers whose input transistors are PMOSFETs were designed and fabriacted using the ISRC CMOS 1.5.mu.m process. It was observed after the amplifier was hot-carrier stressed that the small-signal voltage gain and the input offset voltage increased and the phase margin decreased. The performance variation results from the increase of the transconductances and gate capacitances of the PMOSFETs used as input transistors in the differential input stage and the output stage and also resulted from the decrease of their output conductances. After long-term stress, the amplifier became unstable. The reason might be that its phase margin was reduced due to hot carrier effect.

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Numerical Analysis on Heat Transfer Characteristics in Silicon Boated by Picosecond-to-Femtosecond Ultra-Short Pulse Laser (펨토초급 극초단 펄스레이저에 의해 가열된 실리콘 내의 열전달 특성에 관한 수치해석)

  • 이성혁;이준식;박승호;최영기
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.26 no.10
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    • pp.1427-1435
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    • 2002
  • The main aim of the present article is numerically to investigate the micro-scale heat transfer phenomena in a silicon microstructure irradiated by picosecond-to-femtosecond ultra-short laser pulses. Carrier-lattice non-equilibrium phenomena are simulated with a self-consistent numerical model based on Boltzmann transport theory to obtain the spatial and temporal evolutions of the lattice temperature, the carrier number density and its temperature. Especially, an equilibration time, after which carrier and lattice are in equilibrium, is newly introduced to quantify the time duration of non-equilibrium state. Significant increase in carrier temperature is observed for a few picosecond pulse laser, while the lattice temperature rise is relatively small with decreasing laser pulse width. It is also found that the laser fluence significantly affects the N 3 decaying rate of Auger recombination, the carrier temperature exhibits two peaks as a function of time due to Auger heating as well as direct laser heating of the carriers, and finally both laser fluence and pulse width play an important role in controlling the duration time of non-equilibrium between carrier and lattice.

Conducted Noise Reduction in Three-Phase Boost Converter using Random (3상 승압형 컨버터에 의한 전도노이즈 감소)

  • Jung, Dong-Hyo;Kim, Sang-Nam
    • Proceedings of the KIEE Conference
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    • 2003.07e
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    • pp.79-82
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    • 2003
  • The switching-mode power converter has been widely used because of its features of high efficiency and small weight and size. In the switching-mode power converter, the output voltage is generally controlled by varying the duty ratio of main switch. When a converter operates in steady state, duty ratio of the converter is kept constant. So the power of switching noise is concentrated in specific frequencies. The more white noise is injected, the more conducted EMI is reduced. But output-voltage is not sufficiently regulated. This is the reason why carrier frequency selection topology is proposed. In the case of carrier frequency selection, output-voltage of steady state and transient state is fully regulated. Spectrum analysis is performed on the Phase current and the CM noise voltage. The former is measured with Current Probe and the latter is achieved with LISN, which are connected to the spectrum analyzer respectively.

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Analysis of excess minority carrier and charge wish lifetimes in N-dirft region of NPT-IGBT (수명시간에 따른 NPT-IGBT의 N-drift 영역에서의 과잉소수 캐리어와 전하량 분석)

  • 류세환;이용국;안형근;한득영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.844-847
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    • 2001
  • In this work, transient characteristics of the Non-Punch Through(NPT) Insulated Gate Bipolar Transistor(IGBT) has been studied. we has analyzed with lifetimes excess minority carrier injected into N-dirft, base region of IGBT's BJT part and accumulated charge of on-state which affected swiching characteristic. In this paper, excess minority carrier and charge distribution in active base region is expressed analytically. This analysis proposed optical trade-off between lifetimes and accumulated charge for decreasing switching losses because charge result in switching loss when device was tuned off.

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