• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1203-1205
• /
• 2007

Confinement of charge carrier and exciton is the essential factor for enhancing the efficiency and stability of the electrophosphorescent devices. The interplay between the properties of emitters and other adjacent layers are studied based on the physical interpretation with difference of energy level, charge carrier mobility, and corresponding charge-trapping behavior.

• Applied Science and Convergence Technology
• /
• v.24 no.5
• /
• pp.167-171
• /
• 2015

Quantum-confined nanostructures open up additional perspectives in engineering materials with different electronic and optical properties. We have fabricated unique cation-exchanged CdS and CdS/CdSe quantum dots and measured their first four exciton transitions. We demonstrate that the relationship between electronic transitions and charge-carrier distributions is generalized for a broad range of core-shell nanostructures. These nanostructures can be used to further improve the performance in the fields of bio-imaging, light-emitting devices, photovoltaics, and quantum computing.

• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.37 no.5
• /
• pp.17-27
• /
• 2000

In a SCH(separate confinement heterostructure) QW(quantum well) laser, we calculated the optical gain, the differential gain and recombination current in the QW and derived the bulk carrier density in the SCH region as a function of the QW current by using the analytical capture escape model. Based upon above relations, we found the optical gain and the differential gain correspond to the ratios of carrier and current injected into the QW.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.191.2-191.2
• /
• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.37 no.1
• /
• pp.27-34
• /
• 2000

In this paper, carrier transport mechanism and modulation response for SCH(Separate Confinement Heterostructure) SQW(Single Quantum Well) laser diodes were studied. In order to explain carrier transport mechanism, both carrier density and current density were calculated. The recombination current density in the quantum well as a function of the SCH length was also calculated. For the modulation response, linearizing the rate equation, we calculated the bandwidth, relaxation oscillation frequency, damping factor, and the K-factor.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.3
• /
• pp.9-19
• /
• 2002

By using the thermionic emission model, the L-I-V(power-current-voltage) characteristics of a SCH(seperate confinement heterostructure) QW(quantum well) laser diode is analytically derived. We derived the relationships between the bulk carrier density of SCH regions and the confined carrier density of QW. The L-I-V characteristics is derived analytically by using current continuity equations. Solving the ambipolar diffusion equation under the condition of high level injection and charge neutrality, the current distribution in the SCH regions is considered. Results showed that the major factor affecting the laser I-V characteristics was the change of potential barrier at the cladding-SCH interface. Also the series resistance of a laser diode was decreased and the carrier injection was increased by increasing the forward flux of injection current from cladding to SCH region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.7-7
• /
• 2009

Lead telluride (PbTe) is a very promising thermoelectric material due to its narrow band gap (0.31 eV at 300 K), face-centered cubic structure and large average excitonic Bohr radius (46 nm) allowing for strong quantum confinement within a large range of size. In this work, we present the thermoelectric properties of individual single-crystalline PbTe nanowires grown by a vapor transport method. A combination of electron beam lithography and a lift-off process was utilized to fabricate inner micron-scaled Cr (5 nm)/Au (130 nm) electrodes of Rn (resistance of a near electrode), Rf (resistance of a far electrode) and a microheater connecting a PbTe nanowire on the grid of points. A plasma etching system was used to remove an oxide layer from the outer surface of the nanowires before the deposition of inner electrodes. The carrier concentration of the nanowire was estimated to be as high as $3.5{\times}10^{19}\;cm^{-3}$. The Seebeck coefficient of an individual PbTe nanowire with a radius of 68 nm was measured to be $S=-72{\mu}V/K$ at room temperature, which is about three times that of bulk PbTe at the same carrier concentration. Our results suggest that PbTe nanowires can be used for high-efficiency thermoelectric devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05a
• /
• pp.27-31
• /
• 2001

We fabricated organic electroluminescent(EL) devices with mixed emitting layer of poly(N-vinylcarbazole)(PVK), 2,5-bis(5'-tert-butyl-2-benzoxazoly)thiophene(BBOT), N,N'-diphenyl-N,N'-(3-methyphenyl)-1,1'-biphenyl-4, 4'-diarnine(TPD) and poly(3-hexylthiophene)(P3HT). To improve the external quantum efficiency of EL devices, we added the functional layer to the devices such as LiF insulating layer, carrier confinement layer(BBOT) and hole injection layer(CuPc). In the ITO/emitting layer/Al device, the maximum quantum efficiency at 15V was $1.88{\times}10^{-5}%$. And then, it is increased by a factor of 27 to $5.2{\times}10^{-3}%$ in ITO/CuPc/emitting layer/BBOT/LiF/Al device at 15V.

• ETRI Journal
• /
• v.20 no.2
• /
• pp.231-240
• /
• 1998

We report, for the first time, the fabrication of vertically stacked InGaAs/GaAs quantum wires (QWRs) on V-grooved substrates by chemical beam epitaxy (CBE). To fabricate the vertically stacked QWRs structure, we have grown the GaAs resharpening barrier layers on V-grooves with (100)-(322) facet configuration instead of (100)-(111) base at 450 $^{\circ}C$. Under the conditions of low growth temperature, the growth rate of GaAs on the (322) sidewall is higher than that at the (100) bottom. Transmission electron microscopy verifies that the vertically stacked InGaAs QWRs were formed in sizes of about $200{\AA} {\times} 500{\sim}600 {\AA}$. Three distinct photoluminescence peaks related with side-quantum wells (QWLs), top-QWLs and QWRs were observed even at 200 K due to sufficient carrier and optical confinement. These results strongly suggest the existence of the quantized state in the vertically stacked InGaAs/GaAs QWRs grown by CBE.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.1
• /
• pp.18-26
• /
• 2004

Back-gated silicon-on-insulator MOSFET -a threshold-voltage adjustable device-employs a constant back-gate potential to terminate source-drain electric fields and to provide carrier confinement in the channel. This suppresses shortchannel effects of nano-scale and of high drain biases, while allowing a means to threshold voltage control. We report here a theoretical analysis of this geometry to identify its natural length scales, and correlate the theoretical results with experimental device measurements. We also analyze experimental electrical characteristics for misaligned back-gate geometries to evaluate the influence on transport behavior from the device electrostatics due to the structure and position of the back-gate. The backgate structure also operates as a floating-gate nonvolatile memory (NVRAM) when the back-gate is floating. We summarize experimental and theoretical results that show the nano-scale scaling advantages of this structure over the traditional front floating-gate NVRAM.