• Smart Structures and Systems
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• v.13 no.4
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• pp.501-515
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• 2014

This paper presents a linear computational homogenization framework to evaluate the effective (or generalized) electromechanical coupling coefficient (EMCC) of adaptive structures with piezoelectric structural fiber (PSF) composite elements. The PSF consists of a silicon carbide (SiC) or carbon core fiber as reinforcement to a fragile piezo-ceramic shell. For the micro-scale analysis, a micromechanics model based on the variational asymptotic method for unit cell homogenization (VAMUCH) is used to evaluate the overall electromechanical properties of the PSF composites. At the macro-scale, a finite element (FE) analysis with the commercial FE code ABAQUS is performed to evaluate the effective EMCC for structures with the PSF composite patches. The EMCC is postprocessed from free-vibrations analysis under short-circuit (SC) and open-circuit (OC) electrodes of the patches. This linear two-scale computational framework may be useful for the optimal design of active structure multi-functional composites which can be used for multi-functional applications such as structural health monitoring, power harvest, vibration sensing and control, damping, and shape control through anisotropic actuation.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.12
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• pp.1245-1251
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• 2009

This paper describes the research on the non-eroding throat insert materials under condition of high-temperature, high-pressure, and long-burn time. C/SiC, CIT and W/$Y_2O_3$ were chosen and tested in thermal protection evaluation motor of burning time 20 seconds. From the test results, a heat resistance of W/$Y_2O_3$ was the most excellent among them, but was happened crack on material surface. Thermal reaction characteristics and heat resistance of these materials and feasibility of W/$Y_2O_3$ as throat material were ascertained.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2003.05a
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• pp.294-299
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• 2003

The efficiency of complex slurry preparation route for the development of high performance RS-SiCf/SiC composites has been investigated. The green bodies for RS-SiC and RS-SiCf/SiC composite materials prior to the infiltration of molten silicon were prepared with various C/SiC complex matrix slurries, which associated with both different sizes of starting SiC particles and blending ratios of starting SiC and carbon particles. The reinforcing materials in the composite system were uncoated and C coated Tyranno SA SiC fiber. The characterization of RS-SiC and RS-SiCf/SiC composite materials was examined by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, process optimization methodology is discussed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.15-15
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• 2011

As you know, boron compounds, borax ($Na_2B_4O_5(OH)_4{\cdot}8H_2O$) etc. were known thousands of years ago. As for natural boron, it has two naturally occurring and stable isotopes, boron 11 ($^{11}B$) and boron 10 ($^{10}B$). The neutron absorption $^{10}B$ is included about 19~20% with 80~81% $^{11}B$. Boron is similar to carbon in its capability to form stable covalently bonded molecular networks. The mass difference results in a wide range of ${\beta}$ values between the $^{11}B$ and $^{10}B$. The $^{10}B$ isotope, stable with 5 neutrons is excellent at capturing thermal neutrons. For example, it is possible to decrease a thermal neutron required for the nuclear reaction of uranium 235 ($^{235}U$). If $^{10}B$ absorbs a neutron ($^1n$), it will change to $^7Li+^1{\alpha}$ (${\alpha}$ ray, like $^4He$) with prompt ${\gamma}$ ray from $^{11}B$ $^{11}B$ (equation 1). $$^{10}B+^1n\;{\rightarrow}\;^{11}B\;{\rightarrow}\; prompt \;{\gamma}\;ray (478 keV), \;^7Li+4{\alpha}\;(4He)\;\;\;\;{\cdots}\; (1)$$ If about 1% boron is added to stainless steel, it is known that a neutron shielding effect will be 3 times the boron free steel. Enriched boron or $^{10}B$ is used in both radiation shielding and in boron neutron capture therapy. Then, $^{10}B$ is used for reactivity control and in emergency shutdown systems in nuclear reactors. Furthermore, boron carbide, $B_4C$, is used as the charge of a nuclear fission reaction control rod material and neutron cover material for nuclear reactors. The $B_4C$ powder of natural B composition is used as a charge of a control material of a boiling water reactor (BWR) which occupies commercial power reactors in nuclear power generation. The $B_4C$ sintered body which adjusted $^{10}B$ concentration is used as a charge of a control material of the fast breeder reactor (FBR) currently developed aiming at establishment of a nuclear fuel cycle. In this study for new boron compound, silicon boride ceramics for capturing thermal neutrons, preparation and characterization of both silicon tetraboride ($SiB_4$) and silicon hexaboride ($SiB_6$) and ceramics produced by sintering were investigated in order to determine the suitability of this material for nuclear power generation. The relative density increased with increasing sintering temperature. With a sintering temperature of 1,923 K, a sintered body having a relative density of more than 99% was obtained. The Vickers hardness increased with increasing sintering temperature. The best result was a Vickers hardness of 28 GPa for the $SiB_6$ sintered at 1,923K for 1 h. The high temperature Vickers hardness of the $SiB_6$ sintered body changed from 28 to 12 GPa in the temperature range of room temperature to 1,273 K. The thermal conductivity of the SiB6 sintered body changed from 9.1 to 2.4 W/mK in the range of room temperature to 1,273 K.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• Journal of the Korean institute of surface engineering
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• v.47 no.2
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• pp.75-80
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• 2014

Nanocrystalline diamond(NCD) films on steel(SKH51) has been investigated using SiC interlayer film. SiC was deposited on SKH51 or Si wafer by RF magnetron sputter. NCD was deposited on SiC at $600^{\circ}C$ for 0.5~4 h employing microwave plasma CVD. Film morphology was observed by FESEM and FIB. Film adherence was examined by Rockwell C adhesion test. The growth rate of NCD on SiC/Si substrate was much higher than that on SiC/SKH51. During particle coalescence, NCD growth rate was slow since overall rate was determined by the diffusion of carbon on SiC surface. After completion of particle coalescence, NCD growth became faster with the reaction of carbon on NCD film controlling the whole process. In the case of SiC/SKH51 substrate, a complete NCD film was not formed even after 4 h of deposition. The adhesion test of NCD/SiC/SKH51 samples revealed a delamination of film whereas that of SiC/SKH51 showed a good adhesion. Many voids of less than 0.1 ${\mu}m$ were detected on NCD/SiC interface. These voids were believed as the reason for the poor adhesion between NCD and SiC films. The origin of voids was due to the insufficient coalescence of diamond particles on SiC surface in the early stage of deposition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.6
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• pp.258-263
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• 2020

Silicon carbide (SiC) fibers mainly fabricated from polycarbosilane, a ceramic precursor, are applied as reinforcing materials for ceramic matrix composites (CMCs) because of their high temperature oxidation resistance, tensile strength, and light weight. In this study, continuous SiC fibers used to fabricate rope-type flexible heating elements capable of generating high-temperature heat (> 650℃). For high-efficiency heating elements, the resistance of SiC fiber rope was measured by 2-point probe method according to the cross-sectional area and length. In addition, the fabrication conditions of rope-type SiC fiber heating elements were optimized by controlling the oxygen impurities and the size of crystal grains present in the amorphous SiC fiber. As a result, the SiC fiber heating element having a resistance range of about 100~200 Ω exhibited an excellent power consumption efficiency of 1.5 times compared to that of the carbon fiber heating element.

• Resources Recycling
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• v.22 no.3
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• pp.28-35
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• 2013

The recycling of the Si/SiC mixture sludge obtained from solar cell industry is very significant, environmentally and economically. The sintering characteristics of Si/SiC mixture sludge was studied for the purpose of recycling. In this study, to understand sintering behavior, SiC content in the Si/SiC mixture was controlled using an air separator. Various Si/SiC mixtures having different SiC contents were sintered using carbon black, clay and aluminum hydroxide as sintering aids. Physical properties of Si/SiC mixture and sintered bodies have been characterized using SEM, XRD, particle size analyzer and apparent density measurement. SEM and particle size analysis result confirmed that the fine particles less than 1 ${\mu}m$ decreased or removed more effectively through the air separator in the case of 95% SiC sample compared than the case of 75% SiC sample or original SiC sample. Further, with addition of the Aluminum Hydroxide, ${\beta}$-cristobalite phase gradually decreased while mullite phase gradually increased. The addition of the carbon black improved the sintering characteristics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.7-11
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• 2022

Recently, Hanmi Gemological Institute & Laboratory (HGI) had an opportunity to examine 5 transparent synthetic moissanite. The round brilliants ranged from 0.93 to 0.96 ct and had a colorless, pink, yellow, blue, and red color. Advanced testing results, including Fourier-transform infrared (FTIR) and Raman spectroscopy, identified all the specimens as synthetic moissanite. Under the microscope, all samples except the colorless were confirmed to be a synthetic moissanite coated with a colored film. EDXRF chemical analysis detected very weak X-ray fluorescence peak characteristics of Ca, Ti, and Co in the colored samples. These features were not detected in the colorless sample. Raman spectroscopy investigation was unable to detect the 1332 cm^-1 (produced by sp³ bonding of carbon atoms) or the ~1550 cm^-1 (produced by graphite-related sp² bonding) peak in the colorless sample. The SEM image of the colorless sample showed no indication of a coating. The TEM image of the colorless sample revealed the presence of a 3~8 nm thick layer on the moissanite. Moreover, from the corresponding STEM Z-contrast image combined with the energy-dispersive X-ray spectroscopy (EDX) line profiles and EDX elemental maps, this layer was estimated to be carbon, silicon and oxygen.

• Applied Chemistry for Engineering
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• v.10 no.6
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• pp.843-847
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• 1999

In this research, C/SiC composites, i.e. activated carbon coated with SiC obtained from dichlorodimethylsilane(DDS) and hydrogen, have been made by chemical vapor infiltration(CVI) in a fluidized bed reactor. Activated carbons of sizes of 4~12, 12~20, and 20~40 mesh were used. After deposition the surface area, the amount and the shape of deposit of each sample were observed at different concentrations of reactant DDS, sizes of activated carbon, reaction pressures and reaction times. The experimental results showed that uniform deposition in the pores of sample was obtained at a lower concentration of DDS and a lower pressure. Additionally, from the observation that the pore diameter and the surface area have minimum values at a certain time of deposition, it was known that deposition occurred inside of the pore at first and then on the outside of particle. Small particles of SiC were deposited uniformly on the surface of activated carbon at lower DDS concentrations and lower reaction pressures. The results were confirmed by SEM, TGA, the pore size distribution analyzer and BET.