• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.228-234
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• 1989

Pressureless-sintering of SiC with additions of yttria and alumina was studied. SiC could be densified to about 97% of its theoretical density at 185$0^{\circ}C$ which is about 20$0^{\circ}C$ below the normal sintering temperature of SiC with boron and carbon. Yttria and alumina formed intergranular liquid phases at the sintering temperature and promoted densification by the liquid phase sintering mechanism. The microstructure of sintered specimens was equiaxed and the liquid phase appeared to wet and dissolve SiC grains. The fracture toughness was measured by indentation method and found to be 5.3MPa.m1/2. Processing flaws near the surface of specimens appeared to be the major fracture origin during 3-point bending tests.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.503-509
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• 2001

Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

• Carbon letters
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• v.12 no.2
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• pp.95-101
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• 2011

To investigate new applications for illite as an additive for carbon-based composites, the composites were prepared with and without illite at different heat-treatment temperatures. The effects of the heat-treatment temperature on the chemical structure, microstructure, and thermal oxidation properties of the resulting composites were studied. As the heat-treatment temperature was increased, silicon carbide SiC formation via carbothermal reduction increased until all the added illite was consumed in the case of the samples heat-treated at $2,300^{\circ}C$. This is attributed to the intimate contact between the $SiO_2$ in the illite and the phenol carbon precursor or the carbon fibers of the preform. Among composites prepared at all temperatures, those with illite addition exhibited fewer pores, voids, and interfacial cracks, resulting in larger bulk densities and lower porosities. A delay of oxidation was not observed in the illite-containing composites prepared at $2,300^{\circ}C$, suggesting that the illite itself absorbed energy for exfoliation or other physical changes. Therefore, if the illite-containing C/C composites can reach a density generally comparable to that of other C/C composites, illite may find application as a filler for C/C composites. However, in this study, the illite-containing C/C composites exhibited low density, even when prepared at a high heat-treatment temperature of $2300^{\circ}C$, although the thermal oxidation of the resulting composites was improved.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.169-174
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• 2007

TRISO coated fuel particle is one of the most important materials for hydrogen production using HTGR (high temperature gas cooled reactors). It is composed of three isotropic layers: inner pyrolytic carbon (IPyC), silicon carbide (SiC), outer pyrolytic carbon (OPyC) layers. In this study, TRISO coated fuel particle layers were deposited through CVD process in a horizontal hot wall deposition system. Also the computational simulations of input gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variable (i.e temperature and input gas ratios). As deposition temperature increased, microstructure, chemical composition and growth behavior changed and deposition rate increased. The simulation showed that the change of reactant states affected growth rate at each position of the susceptor. The experimental results showed a close correlation with the simulation results.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.232.2-232.2
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• 2014

Since its discovery in 2004, graphene, a sp2-hybridized 2-Dimension carbon material, has drawn enormous attention. A variety of approaches have been attempted, such as epitaxial growth from silicon carbide, chemical reduction of graphene oxide and CVD. Among these approaches, the CVD process takes great attention due to its guarantee of high quality and large scale with high yield on various transition metals. After synthesis of graphene on metal substrate, the subsequent transfer process is needed to transfer graphene onto various target substrates, such as bubbling transfer, renewable epoxy transfer and wet etching transfer. However, those transfer processes are hard to control and inevitably induce defects to graphene film. Especially for wet etching transfer, the metal substrate is totally etched away, which is horrendous resources wasting, time consuming, and unsuitable for industry production. Thus, our group develops one-step process to directly grow graphene on glass substrate in plasma enhanced chemical vapor deposition (PECVD). Copper foil is used as catalyst to enhance the growth of graphene, as well as a temperature shield to provide relatively low temperature to glass substrate. The effect of growth time is reported that longer growth time will provide lower sheet resistance and higher VSG flakes. The VSG with conductivity of $800{\Omega}/sq$ and thickness of 270 nm grown on glass substrate can be obtained under 12 min growing time. The morphology is clearly showed by SEM image and Raman spectra that VSG film is composed of base layer of amorphous carbon and vertically arranged graphene flakes.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.12
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• pp.28-32
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• 2010

Technical demands for aspheric glass lens formed in market increases its application from simple camera lens module to fiber optics connection module in optical engineering. WC is often used as a metal core of the aspheric glass lens, but the long life time is issued because it fabricated in high temperature and high pressure environment. High hard thin film coating of lens core increases the core life time critically. Diamond Like Carbon(DLC) thin film coating shows very high hardness and low surface roughness, i.e. low friction between a glass lens and a metal core, and thus draw interests from an optical manufacturing industry. In addition, DLC thin film coating can removed by etching process and deposit the film again, which makes the core renewable. In this study, DLC films were deposited on the SiC ceramic core. The process variable in FVA(Filtered Vacuum Arc) method was the substrate bias-voltage. Deposited thin film was evaluated by raman spectroscopy, AFM and nano indenter and measured its crystal structure, surface roughness, and hardness. After applying optimum thin film condition, the life time and crystal structure transition of DLC thin film was monitored.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.90.2-90.2
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• 2012

Graphene has recently attracted significant attention because of its unique optical and electrical properties. For practical device applications, special attention has to be paid to the synthesis of high-quality graphene on large-area substrates. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on Ni or Cu substrates. Among these techniques, CVD is superior to the others from the perspective of technological applications because of its possibility to produce a large size graphene. PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures, such as carbon nanotubes and nanosheets. Compared with thermal CVD, PECVD possesses a unique advantage of additional high-density reactive gas atoms and radicals, facilitating low-temperature, rapid, and controllable synthesis. In the current study, we report results in synthesizing of high-quality graphene films on a Ni films at low temperature. Controllable synthesis of quality graphene on Cu foil through inductively-coupled plasma CVD (ICPCVD), in which the surface chemistry is significantly different from that of conventional thermal CVD, was also discussed.

• Journal of Powder Materials
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• v.25 no.5
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• pp.375-378
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• 2018

Conductive and dielectric SiC are fabricated using electroless plating of Ni-Fe films on SiC chopped fibers to obtain lightweight and high-strength microwave absorbers. The electroless plating of Ni-Fe films is achieved using a two-step process of surface sensitizing and metal plating. The complex permeability and permittivity are measured for the composite specimens with the metalized SiC chopped fibers dispersed in a silicone rubber matrix. The original non-coated SiC fibers exhibit considerable dielectric losses. The complex permeability spectrum does not change significantly with the Ni-Fe coating. Moreover, dielectric constant is sensitively increased with Ni-Fe coating, owing to the increase of the space charge polarization. The improvements in absorption capability (lower reflection loss and small matching thickness) are evident with Ni-Fe coating on SiC fibers. For the composite SiC fibers coated with Ni-Fe thin films, a -35 dB reflection loss is predicted at 7.6 GHz with a matching thickness of 4 mm.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.331-337
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• 2007

High temperature reaction behaviors of various oxide materials (such as bauxite, pyrophyllite, mullite and fused silica powders) used in the refractory materials for tap-hole plugging of blast furnace were investigated with varying temperature in the carbon surrounding. Kinetics of carbothermal reduction of $SiO_2$ for forming SiC with high corrosion resistance were strongly dependent on it's crystalline phase. SiC generation yield increased with increasing catalyst amount in oxide regardless of generated SiO gas amount at temperature of $<1500^{\circ}C$. However, in case of fused silica over $1500^{\circ}C$, SiC generation yield was dominantly influenced by SiO amount without catalyst effect. Bauxite showed the most effective carbothermal reduction reaction, since bauxite have a large amount of catalyst and well-dispersed $SiO_2$ phase in oxide matrix.

• Journal of Technologic Dentistry
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• v.28 no.2
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• pp.355-366
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• 2006

The purpose of this study was to determine if repeated casting has a detrimental effect on the corrosion behavior of nickel-chrome casting alloys. The X-ray diffraction analysis, vickers hardness test, SEM, EDX and corrosion test were performed to determine the effects of recasting on chemical composition, microstructure, physical property, castability and corrosion behavior of nickel-chrome casting alloys. The X-ray diffraction analysis results for the cast and recast specimens of the VeraBond and the Rexillium V showed that major crystal phase contained nickel-chrome compounds, Nickel carbide and Chrome carbide. Microstructure analysis results for the cast and recast specimens of the VeraBond and the Rexillium V showed recasting has no effect on microstructure. EDX analysis results indicated the percentage of the main component nickel(Ni) in the specimens of the VeraBond showed a tendency to increase with recasting, but those of other components Carbon(C) showed a tendency to decrease with recasting, Chrome(Cr), Silicon(Si), Aluminium(Al) and molybdenum(Mo) showed no changes in the percentage. The percentage of the main component nickel(Ni) in the specimens of the Rexillium V showed a tendency to increase with recasting, but those of other components silicon(Si), carbon(C) and molybdenum(Mo) showed a tendency to decrease with recasting, chrome(Cr) and aluminium(Al) showed no changes in the percentage. The vickers hardness results for the cast and recast specimens of the VeraBond and the Rexillium V showed a tendency to decrease with recasting, but the differences for the first to fifth cast were not statistically significant. The castability results for the cast and recast specimens of the VeraBond and the Rexillium V showed a tendency to decrease with recasting, but the differences for the first to fifth cast were not statistically significant. The cast and recast specimens of the VeraBond and the Rexillium V showed no differences in the corrosion resistance. The results indicate that the VeraBond and the Rexillium V can be safely recast.