• Title/Summary/Keyword: Capacitively Coupled

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Design of a WBAN Repeater Antenna for MICS and ISM Bands (MICS와 ISM 대역을 위한 인체 통신 중계용 안테나 설계)

  • Lee, Ho-Joo;Kwon, Kyeol;Lee, Soon-Yong;Choi, Jae-Hoon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.3
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    • pp.314-319
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    • 2012
  • In this paper, a repeater antenna operating at MICS and ISM bands is proposed and the antenna performance including the human body effect is investigated. The proposed antenna is composed of a ZOR(Zeroth Order Resonator) and a loop antenna. A loop antenna is operated at ISM band and a loop antenna capacitively coupled with a ZOR acts as an antenna for MICS band. Simulation was carried out in order to analyze the effects of human body on antenna performance when a human body is located in the near field of an antenna. According to the simulated and measured results, the proposed antenna has -10 dB $S_{11}$ bandwidth wide enough to cover both MICS and ISM bands. The measured peak gains are -28.53 dBi and 3.85 dBi at MICS and ISM band, respectively. The dual band and radiation properties of the proposed antenna are well suited for the WBAN repeater system.

The Graft Polymerization of Acrylic Acid in Vapour Phase onto Poly(ethylene terephthalate) by Cold Plasma Part (I) (저온 Plasma를 이용한 Poly(ethylene terephthalate)에의 Acrylic Acid의 기상 Graft 공중합 반응(I))

  • 천태일;최석철;모상영
    • Textile Coloration and Finishing
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    • v.1 no.1
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    • pp.7-18
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    • 1989
  • The distinguishing characteristic of the glow discharge is that chemical reaction induced by partially ionized gases are limited only to the substrate surface. Most studies have been done on the plasma etching and polymerization. The graft polymerization in vapour phase by cold plasma has been rarely investigated. In this study the system of tub3ar reaction chamber with capacitively coupled electrode of alternative current of 60 Hz was employed for the graft polymerization. The graft polymerization of Acylic Acid(AA) onto the poly (ethylene terephthalate) (PET) was carried out by treatment of PET film and fabric by cold plasma (glow discharge of argon gas), followed by the supply of AA vapour. The graft yield was about 1 wt%. The surface property was determined by contact angle, the surface tension was evaluated by zisman’s plot and equation of surface tension mesurement. The results were as follows: 1. In order to obtain lower contact angle, it was effective to avoid the vicinity of electrodes for a setting position of substrate. 2. Contact angle affected on the monomer pressure and its duration of exposure to the acid vapour. 3. Polymer radical formation was influenced by the changes of the value of current density and plasma treatment time. 4. Total surface tension of plasma grafted PET film increased. With an increase in the carboxylic acid content, the dispersion force decreased, while, the polar force and hydrogen bonding force increased. 5. The contact angle decreased from $75^\circ$ to around $30^\circ$ by plasma grafting. There was no ageing effect on the contact angle after 4 months.

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Effective of bias voltage as electrical property of ZnO:Al transparent conducting films on polyethylen terephthalate substrate (PET 기판 위에 증착된 ZnO:Al 투명 전도막의 전기적 특성에 미치는 바이어스전압의 효과)

  • Park, Byung-Wook;Jessie, Darma;Sung, Youl-Moon;Kwak, Dong-Joo
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1260-1261
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    • 2008
  • Aluminium doped zinc oxide (ZnO:Al) thin film has emerged as one of the most promising transparent conducting electrode in flat panel displays(FPD) and in photovoltaic devices since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r.f. magnetron sputtering method. Wide ranges of bias voltage, -30V${\sim}$45V, was applied to the growing films as an additional energy instead of substrate heating, and the effect of positive and negative bias on the film structure and electrical properties of ZnO:Al films was studied and discussed. The results showed that a bias applied to the substrate during sputtering contributed to the improvement of electrical properties of the film by attracting ions and electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO film on the substrate, resulting in significant variations in film structure and electrical properties. The film deposited on the PET substrate at r. f. discharge power of 200 W showed the minimum resistivity of about $2.4{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 87%.

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Superconformal gap-filling of nano trenches by metalorganic chemical vapor deposition (MOCVD) with hydrogen plasma treatment

  • Moon, H.K.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.246-246
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    • 2010
  • As the trench width in the interconnect technology decreases down to nano-scale below 50 nm, superconformal gap-filling process of Cu becomes very critical for Cu interconnect. Obtaining superconfomral gap-filling of Cu in the nano-scale trench or via hole using MOCVD is essential to control nucleation and growth of Cu. Therefore, nucleation of Cu must be suppressed near the entrance surface of the trench while Cu layer nucleates and grows at the bottom of the trench. In this study, suppression of Cu nucleation was achieved by treating the Ru barrier metal surface with capacitively coupled hydrogen plasma. Effect of hydrogen plasma pretreatment on Cu nucleation was investigated during MOCVD on atomic-layer deposited (ALD)-Ru barrier surface. It was found that the nucleation and growth of Cu was affected by hydrogen plasma treatment condition. In particular, as the plasma pretreatment time and electrode power increased, Cu nucleation was inhibited. Experimental data suggests that hydrogen atoms from the plasma was implanted onto the Ru surface, which resulted in suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. Due to the hydrogen plasma treatment of the trench on Ru barrier surface, the suppression of Cu nucleation near the entrance of the trenches was achieved and then led to the superconformal gap filling of the nano-scale trenches. In the case for without hydrogen plasma treatments, however, over-grown Cu covered the whole entrance of nano-scale trenches. Detailed mechanism of nucleation suppression and resulting in nano-scale superconformal gap-filling of Cu will be discussed in detail.

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Decrease of Global Warming Effect During Dry Etching of Silicon Nitride Layer Using C3F6O/O2 Chemistries

  • Kim, Il-Jin;Moon, Hock-Key;Lee, Jung-Hun;Jung, Jae-Wook;Cho, Sang-Hyun;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.459-459
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    • 2012
  • Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.

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Development of Online Speller using Non-contact Blink Detection Glasses (비접촉 눈 깜박임 측정 안경형 디바이스를 이용한 실시간 스펠러의 구현)

  • Lee, Jeong Su;Lee, Hong Ji;Lee, Won Kyu;Lim, Yong Gyu;Park, Kwang Suk
    • Journal of Biomedical Engineering Research
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    • v.36 no.6
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    • pp.283-290
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    • 2015
  • We proposed blink based online speller for the locked-in syndrome (LIS) patients, paralyzed in nearly all voluntary muscles expect for the eyes, with a simple and easy-to-use eye blink detection glasses. Electrooculogram (EOG) is the golden standard method of eye movement or blink measurement with Ag/AgCl electrodes. However, this method has several drawbacks such as skin irritation and dehydration of conductive gel. To resolve the shortcomings, we used a blink detection system based on a transparent capacitively coupled electrode, which is conductive indium tin oxide (ITO) films. The films make it possible to measure eye blink without direct skin contact and obstruction of field of view. We finally developed user-friendly blink based online speller with the blink detection system. To classify voluntary and non-voluntary blink, we used the double blink for command of the speller. The online speller experiment result with six healthy subjects shows that mean accuracy is 98.96% and letter per minute (LPM) is 4.73, which are better result by comparison with conventional P300 or auditory brain-computer interface (BCI) paradigm. The result of the experiment demonstrates the possibility of applying the proposed system as a communication method for the LIS patients.

축전 결합형 $O_2$ 플라즈마를 이용한 아크릴과 폴리카보네이트의 식각 공정 비교

  • Park, Ju-Hong;Lee, Seong-Hyeon;No, Ho-Seop;Choe, Gyeong-Hun;Jo, Gwan-Sik;Lee, Je-Won
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.39.1-39.1
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    • 2009
  • 본 실험은 연성과 광 투명도가 뛰어난 아크릴 (PMMA) 과 폴리카보네이트 (Polycabonate) 기판의 축전 결합형 플라즈마 (CCP) 건식 식각 연구에 관한 것이다. 특히 식각 반응기 내부의 압력 변화에 따른 두 기판의 건식 식각 특성 분석에 초점을 맞추었다. 실험에 사용된 기판은 두께 1mm의 아크릴 (PMMA) 과 폴리카보네이트 (Polycabonate)를 $1.5\times1.5\;cm^2$로 절단하여 Photo-lithography 공정을 통하여 감광제 (Photo-resist)로 패턴하였다. 식각 반응기 내부에 패턴 된 아크릴(PMMA) 과 폴리카보네이트 (Polycabonate)를 넣은 후 반응기 내부 진공 상태로 만들었다. 그 후 5 sccm $O_2$ 가스를 유량조절기 (Mass flow controller)를 통하여 식각 반응기 내부로 유입하여 실험을 하였다. 이때 식각 공정 변수는 식각 반응기 내부 압력과 샘플 척 파워이다. 특성평가 항목은 식각 후 기판 (Substrate)의 식각율 (Etch rate), 식각 선택비 (Selectivity) 그리고 기판 표면 거칠기 (RMS roughness)이다. 실험 결과는 표면 단차 분석기(Surface profiler)를 이용하여 기판 (Substrate)의 표면을 분석 하였다. 또한 OES (Optical Emission Spectroscopy) 를 이용하여 식각 중 내부 플라즈마의 상태를 분석하였다. 본 실험 결과에 따르면 5 sccm $O_2$ 가스와 100 W 척 파워를 고정한 후 반응기 내부의 압력을 25 mTorr에서 180 mTorr까지 변화시켜 실험한 결과 40 mTorr의 반응기 내부 압력에서 실험 자료 중 가장 높은 식각율로 아크릴 (PMMA)은 $0.46\;{\mu}m/min$, 폴리카보네이트 (Polycabonate)는 $0.28\;{\mu}m/min$의 결과를 얻었다. 또한 이 자료를 바탕으로 5 sccm $O_2$ 가스와 반응기 내부 압력을 40 mTorr로 고정시키고 RIE 척 파워를 25 W에서 150 W로 증가시켰을 때 아크릴 (PMMA)의 식각율은 $0.15\;{\mu}m/min$에서 $0.72\;{\mu}m/min$까지 증가하였고, 폴리카보네이트 (Polycabonate) 의 식각율은 $0.1\;{\mu}m/min$에서 $0.36\;{\mu}m/min$까지 증가하였다.

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A Study on Design and Fabrication of Quad-Band Small Antenna with MD(magneto-dielectric) material for mobile Applications (MD 매질을 이용한 이동통신용 Quad-Band 소형 안테나 설계 및 구현에 관한 연구)

  • Kim, Woo-Su;Yoon, Cheol;Oh, Soon-Soo;Kang, Suk-Youb;Park, Hyo-Dal
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.5
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    • pp.1270-1276
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    • 2010
  • In this paper, Quad-Band small antenna for GSM850, GSM900, DCS1800, DCS1900 is designed and fabricated. The antenna achieved the size reduction of over 67.9 % than the conventional PIFA(Planar Inverted-F Antenna) by using a MD(Magneto-Dielectric) material. A simple feeding microstrip line is used to feed the antenna from a $50{\Omega}$ coaxial line, which is capacitively coupled to the grounded patch structure for broadband characteristics. The impedance bandwidth the proposed antenna shows good results as broadband characteristics of 1341 MHz (801 ~ 2142 MHz) in VSWR < 3 (${\leq}\;-6\;dB$) and the gain is -6.67 ~ 4.25 dBi in the operating frequency.

Effects of Plasma Treatment on Contact Resistance and Sheet Resistance of Graphene FET

  • Ra, Chang-Ho;Choi, Min Sup;Lee, Daeyeong;Yoo, Won Jong
    • Journal of Surface Science and Engineering
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    • v.49 no.2
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    • pp.152-158
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    • 2016
  • We investigated the effect of capacitively coupled Ar plasma treatment on contact resistance ($R_c$) and channel sheet resistance ($R_{sh}$) of graphene field effect transistors (FETs), by varying their channel length in the wide range from 200 nm to $50{\mu}m$ which formed the transfer length method (TLM) patterns. When the Ar plasma treatment was performed on the long channel ($10{\sim}50{\mu}m$) graphene FETs for 20 s, $R_c$ decreased from 2.4 to $1.15k{\Omega}{\cdot}{\mu}m$. It is understood that this improvement in $R_c$ is attributed to the formation of $sp^3$ bonds and dangling bonds by the plasma. However, when the channel length of the FETs decreased down to 200 nm, the drain current ($I_d$) decreased upon the plasma treatment because of the significant increase of channel $R_{sh}$ which was attributed to the atomic structural disorder induced by the plasma across the transfer length at the edge of the channel region. This study suggests a practical guideline to reduce $R_c$ using various plasma treatments for the $R_c$ sensitive graphene and other 2D material devices, where $R_c$ is traded off with $R_{sh}$.

The Analysis of DC Plasmas Characteristics on SFSF6 and N2 Mixture Gases (SF6/N2 혼합기체의 DC 플라즈마 특성 분석)

  • So, Soon-Youl
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.10
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    • pp.1485-1490
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    • 2014
  • $SF_6$ gas has been used for power transformers or gas insulated switchgears, because it has the superior insulation property and the stable structure chemically. It has been, however, one of global warming gases and required to reduce the its amount. Some papers have reported that its amount could be reduced by mixing with other gases, such as $N_2$, $CF_4$, $CO_2$ and $C_4F_8$ and their mixture gases would cause the synergy effect. In this paper, we investigated the characteristics of DC plasmas on $SF_6$ mixture gases with $N_2$ at atmospheric pressure. $N_2$ gas is one of cheap gases and has been reported to show the synergy effect with mixing $SF_6$ gas, even though $N_2$ plasmas have electron-positive characteristics. 38 kinds of $SF_6/N_2$ plasma particles, which consisted of an electron, two positive ions, five negative ions, 30 excitation and vibration particles, were considered in a one dimensional fluid simulation model with capacitively coupled plasma chamber. The results showed that the joule heating of $SF_6/N_2$ plasmas was mainly caused by positive ions, on the other hand electrons acted on holding the $SF_6/N_2$ plasmas stably. The joule heating was strongly generated near the electrodes, which caused the increase of neutral gas temperature within the chamber. The more $N_2$ mixed-ratio increased, the less joule heating was. And the power consumptions by electron and positive ions increased with the increase of $N_2$ mixed-ratio.