• Journal of Advanced Marine Engineering and Technology
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• v.28 no.4
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• pp.569-576
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• 2004

In this paper, passive telemetry capacitive humidity sensor system using a RLSE(Recursive Least Square Estimation) technique is proposed. To overcome the problem like power limits and complications that general passive telemetry sensor system including IC chip has, the principle of inductive coupling is applied to model the sensor system. Specially. by applying the forgetting factor we show that the accuracy of its estimation can be improved even in the case of time varying parameter and also the convergence time can be reduced.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.55 no.1
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• pp.26-30
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• 2006

For the purpose of developing capacitive humidity sensor having interdigital electrodes, interdigital electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thickness. For the development of ASIC, switched capacitor signal processing circuits for capacitive humidity sensor were designed and simulated by Cadence using $0.25{\mu}m$ CMOS process parameters. The signal processing circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control. The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is $0.4%R.H./^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of $3%R.H.{\sim}98%R.H.$. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigital electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.3
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• pp.144-148
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• 2001

For the purpose of developing capacitive humidity sensor having interdigit electrodes, interdigit electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thichness. For the development of ASIC, switched capacitor signal conditioning circuits for capacitive humidity sensor were designed and simulated by cadence using 0.25um CMOS process parameters. The signal conditioning circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is 0.4%R.H./$^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of 3%R.H. ${\sim}$ 98%R.H.. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigit electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.224-228
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• 2011

This research, integratable capacitive relative humidity sensor was produced using polyimide on glass substrate. Also, at the time of upper electrode formation, upper electrode grain size was affected by giving changes to sputtering condition. Through this analyzing electrical characteristics affect from capacitive relative humidity sensor was possible. Capacitance of capacitive relative humidity sensor was 330 pF, linearity of 0.6%FS and it showed less than 3% of low hysterisis. Specially, hysterisis was affected more from interface than interstitial. Also was affected by the grain size which is one of the formation condition of upper electrode.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2004.04a
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• pp.495-498
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• 2004

In this paper, passive telemetry capacitive humidity sensor system using a RLSE(Recursive Least Square Estimation) technique Is proposed. To overcome the problem like power limits and complications that general passive telemetry sensor system including IC chip has, the principle of inductive coupling is applied to model the sensor system. Specially, by applying the forgetting factor, we show that the accuracy of its estimation can be improved even in the case of time varying parameter and also the convergence time can be reduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.566-570
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• 2014

Electrode pattern effects on the capacitive humidity sensor were investigated. The fabrication of the capacitive humidity sensor was formed with three steps. The bottom electrode was formed on the silicon substrate with Pt/Ti thin layer by using shadow mask and e-beam evaporator. The photo sensitive polyimide was formed on the bottom electrode by using photolithography process as a humidity sensitive thin film. The upper electrode was formed on the polyimide thin film with Pt/Ti thin layer by using e-beam evaporator and lift-off method. Three electrode patterns, such as circle, square, and triangle pattern, were used and changed the sizes to investigate the effects. The capacitances of the sensors were decreased 622 to 584 pF with the area decreament of patterns 250,000 to $196,250{\mu}m^2$. From these results, a capacitive humidity sensor with photo sensitive polyimide is expected to be applied to a high sensitive humidity sensor.

• Journal of Sensor Science and Technology
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• v.21 no.2
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• pp.83-89
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• 2012

A simple array of metal-insulator-metal capacitive elements was proposed for a potential application in humidity sensing platforms. We fabricated meso-scale sensors with different sizes(large-size: $2.7{\times}2.7mm^2$ ; mid-size: $1.5{\times}1.5mm^2$ ; small-size: $0.7{\times}0.7mm^2$) and characterized the performance of each design. Polyimide films were utilized as a humidity-sensitive layer. Capacitance changes of the polyimide layer were measured with respect to water absorption. The device showed sensitivity in the full range of relative humidity (RH) with excellent linearity(correlation coefficient > 0.994). This array structure exhibits unique advantages including easy fabrication process, high batch productivity, and high structural compatibility with various substrate materials. It is anticipated that this device structure will be potentially useful in unique applications including mapping spatial humidity variations over a meso-scale area and implementing flexible humidity sensing element arrays.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.21-27
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• 2003

The copolymers with various composition of methyl methacrylate (MMA), ethyl methacrylate (EMA), methacrylic acid (MA) and hydroxyethyl methacrylate (HEMA) were synthesized for capacitive humidity sensitive materials. The capacitive humidity sensor consisted of a polymethacrylate film coated on both sides with gold electrode. Capacitance versus relative humidity increased with HEMA content in the copolymer. In the case of self-crosslinkable MMA/MA/HEHA= 40/10/10, the average capacitance at 30%RH, 60%RH and 90%RH are 102, 134 and 166 pF, respectively. And also, the hysteresis, temperature cycle and long-term stability were evaluated as a capacitance humidity sensor.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.128-132
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• 2004

This paper presents the design, fabrication sequence and measurement results of a highly sensitive capacitive-type humidity sensor using a polyimide film without hydrophobic elements. The structure of the humidity sensor is MIM (metalinsulator-metal). For a high sensitivity, a modified aromatic polyimides as a moisture absorbing layer has been synthesized instead of using general polyimides containing hydrophobic elements. The polyimide film was obtained by synthesizing and thermally polymerizing polyamic acid composed of m-pyromellitic dianhydride, phenelenediamine and dimethylacetamide. Characteristics of fabricated sensors which include sensitivity, hysteresis and stability have been measured. The measurement result shows the percent normalized capacitance change of 0.37/%RH over a range from 10 to 90%RH, hysteresis of 0.77% over the same %RH range and maximum drift of 0.25% at 50%RH. The result shows that the developed humidity sensor can be applied to evaluate a hermeticity of various sensors and actuator systems as well as micro packages.

• Journal of Mechanical Science and Technology
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• v.20 no.4
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• pp.505-512
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• 2006

This paper presents an integrated multifunctional sensor based on MEMS technology, which can be used or embedded in mobile devices for environmental monitoring. An absolute pressure sensor, a temperature sensor and a humidity sensor are integrated in one silicon chip of which the size is $5mm\times5mm$. The pressure sensor uses a bulk-micromachined diaphragm structure with the piezoresistors. For temperature sensing, a silicon temperature sensor based on the spreading-resistance principle is designed and fabricated. The humidity sensor is a capacitive humidity sensor which has the polyimide film and interdigitated capacitance electrodes. The different piezoresistive orientation is used for the pressure and temperature sensor to avoid the interference between sensors. Each sensor shows good sensor characteristics except for the humidity sensor. However, the linearity and hysteresis of the humidity sensor can be improved by selecting the proper polymer materials and structures.