• 한국전기전자재료학회논문지
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• 제28권8호
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• pp.481-485
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• 2015

We investigated the effects of annealing on the electrical and thermal properties of ZTO/4H-SiC heterojunction diodes. A ZTO thin film layer was grown on p-type 4H-SiC substrate by using solution process. The ZTO/SiC heterojunction structures annealed at $500^{\circ}C$ show that $I_{on}/I_{off}$ increases from ${\sim}5.13{\times}10^7$ to ${\sim}1.11{\times}10^9$ owing to the increased electron concentration of ZTO layer as confirmed by capacitance-voltage characteristics. In addition, the electrical characterization of ZTO/SiC heterojunction has been carried out in the temperature range of 300~500 K. When the measurement temperature increased from 300 K to 500 K, the reverse current variation of annealed device is higher than as-grown device, which is related to barrier height in the ZTO/SiC interface. It is shown that annealing process is possible to control the electrical characteristics of ZTO/SiC heterojunction diode.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.270-272
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• 1997

In order to a study on the electrical properties of silicone gel due to the curing condition, the volume resistivity test is researched. For experiment, we have made up several samples of different curing temperature and time such as 1[H], 2[H] at 125[$^{\circ}C$], 150[$^{\circ}C$], 160[$^{\circ}C$], 170[$^{\circ}C$], 180[$^{\circ}C$]. A measurement of volume resistivity using the VMG-1000 highmegohm meter is recorded after 10 minutes when the each voltage, and DC 500[V] and 1000[V] is applied. A coaxial cylindrical liquid electrode to measure volume resistivity of specimen is used, and its geometric capacitance is 2[pF]. As a result of the experiment, the electrical properties of specimen cured at 170[$^{\circ}C$] for 2[H] is superior.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.382-384
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• 1997

On-site partial discharge test by use of AC voltage has been considered not to be appropriate for the extruded power cable due to their large capacitance depending on their lengths. Therefore, it is proposed, in this work, to use switching impulse voltage of which the front time is set from 1ms to 10ms. This newly proposed method enables us to simulate the 1/4 period of power frequency at 60 Hz and to obtain similar effect of AC voltage test. Our tentative results show that 51 voltage is proved to be an alternative method, replacing AC voltage, by which partial discharge was well produced from the artificial defects integrated in 22.9kV distribution power cables.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.357-365
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• 2014

A non-invasive method for ion energy distribution measurement at a RF biased surface is proposed for monitoring the property of ion bombardments in capacitively coupled plasma sources. To obtain the ion energy distribution, the measured electrode voltage is analyzed based on the circuit model which is developed with the linearized sheath capacitance on the assumption that the RF driven sheath behaves like a simple diode for a bias power whose frequency is much lower than the ion plasma frequency. The method is verified by comparing the ion energy distribution function obtained from the proposed model with the experimental result taken from the ion energy analyzer in a dual cathode capacitively coupled plasma source driven by a 100 MHz source power and a 400 kHz bias power.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.452-455
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• 2003

[ $ZrO_2$ ] dielectric layers were grown on the p-type Si (100) substrate by metalorganic molecular beam epitaxy(MOMBE). Zrconium t-butoxide, $Zr(O{\cdot}t-C_4H_9)_4$ was used as a Zr precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and the properties of the $ZrO_2$ layers were evaluated by X-ray diffraction, high frequency capacitance-voltage measurement. and HF C-V measurements have shown that $ZrO_2$ layer grown by MOMBE has a high dielectric constant (k=18-19). The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.277-278
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• 2005

Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV)-based polymer light emitting diodes (PLEDs) with the LiF cathode buffer layer. The single layer device with ITO/MEH-PPV/Al structure can be modeled as a simple parallel combination of resistor and capacitor. Insertion of a LiF layer at the Al/MEH-PPV interface shifts the highest occupied molecular orbital level and the vacuum level of the MEH-PPV layer as a result the barrier height for electron injection at the Al/MEH-PPV interface is reduced. The admittance spectroscopy measurement of the devices with the LiF cathode buffer layer shows reduction in contact resistance ($R_c$), parallel resistance ($R_p$) and increment in parallel capacitance ($C_p$).

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권3호
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• pp.144-148
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• 2001

For the purpose of developing capacitive humidity sensor having interdigit electrodes, interdigit electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thichness. For the development of ASIC, switched capacitor signal conditioning circuits for capacitive humidity sensor were designed and simulated by cadence using 0.25um CMOS process parameters. The signal conditioning circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is 0.4%R.H./$^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of 3%R.H. ${\sim}$ 98%R.H.. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigit electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc..

• 전기학회논문지P
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• 제55권4호
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• pp.196-201
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• 2006

A electrical fault that may generate an electrical disaster is defined as any abnormal condition caused by reduction in the insulation strength. To find out the abnormal condition, periodical inspections have being performed every 3 years. Recently, the number of empty houses during normal working hours is rising by dramatic increase in the number of nuclear families and double income families. To define the potential risk of the electric installation, measurement of zero phase current has been being considered. But the measured value could not be adapted to an absolute reference to the installation because the measured zero phase current value also contained capacitive leakage current. Therefore, in this paper, the correlation between the condition of the electrical installation and the zero phase current was analyzed. The result focuses on to detect them in a cost efficient way.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1232-1236
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• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/oxidized PS/PS/P-Si/Al, where the p-Si is etched anisotropically to be prepared into a membrane-shape. We used alcohol gases vaporized from different alcohol (or ethanol) solutions mixed with pure water at 36$^{\circ}C$, similarly with an alcohol breath measurement to check drunk driving. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator-semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• 한국광학회지
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• 제12권4호
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• pp.300-304
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• 2001

압전소자에 전압을 가했을 때 길이가 늘어나며 휘어지는 것을 측정하고 보정하는 방법을 제시한다. 압전소자에 부착된 거울에서 반사되는 레이저빔의 각도 변화를 $0.36\mu$rad의 불확도로 측정하여 압전소자가 휘는 각도와 방향을 알수 있는 장치를 구성하였다. 압전소자의 전극을 세부분을 분할하고 축전기를 직렬 연결하여 하나의 전원으로도 각 전극에 인가되는 전압을 달리 조절할 수 있었다. 압전소자가 휘어지는 크기와 방향에 따라 각 전극에 연결되는 축전기의 용량을 달리함으로써 보정 전에 비해 휨을 6.3%로 줄일수 있었다. 휨이 보정된 압전소를 광자감쇠공동의 길이 변조에 이용하였을 때 압전소자가 휘기 때문에 야기되었던 감쇠시간 요동이 효과적으로 제거되는 것을 확인하였다.