• Title/Summary/Keyword: Capacitance measurement

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Effective Body Signal Measurement with the Bioelectric Impedance Analysis (효율적인 생체 임피던스 신호 측정에 관한 연구)

  • Oh, Se-Yong;Lee, Young-Woo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.2
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    • pp.689-692
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    • 2005
  • Bioelectrical Impedance Analysis(BIA) can measure body water amount and then body fat mass. Locate 4 electrode in palm to measure efficiently and flow current(50kHz, 800uA) in body for measuring voltage and capacitance. And proposed method to measure body fat with hight, weight, age and distinction of sex.

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A Study of The NO$_2$Gas Detect Properties of N-docosyl pyridinium(TCNQ) LB Film (N-docosyl pyridinium(TCNQ) LB막의 NO$_2$가스탐지 특성에 관한 연구)

  • 유병호;조형근;김형석;이창희;김정수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.05a
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    • pp.75-78
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    • 1994
  • Organic ultra thin films about 500${\AA}$ in thickness are fabricated by LB(Langmuir-Blodgett) technique and their gas detect properties are investigated. The LB films deposited are made of the specimen named as N-docosyl pyridinium(TCNQ) and the deposition is verified by capacitance conductivity measurement. From the study of gas detect properties with I-V characteristics and UV spectrum we have found that their conductivities were increased about 3 times of magnitude and peaks of UV spectrum were decreased.

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Volume Resistivity Characteristies of Transformer Oils due to the Stirring Temperalure of BTA (BTA 교반온도에 따른 변압기유의 체적고유저항 특성)

  • 이용우;김석환;박문규;소병문;김왕곤;홍진웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.290-293
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    • 1997
  • In this paper, volume resistivity is studied so that the electrical properties for transformer oil due to the stirring temperature of BTA is investigated. A measurement of volume resistivity using the VMG-1000 highmegohm meter is recorded after 10 minutes when the each voltage, and DC 100[V], 250[V], 500[V] and 1000[V] is applied, according to the step voltage appliaction method. A coaxial cylindrical liquid electrode to measure volume resistivity of specimen is used, and its geometric capacitance is 16[pF].

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Properties of Electrical Performance by Inverter Surge on Stator Coil of Traction Motor (인버터 서지에 의한 견인전동기 고정자 권선의 전기적 특성 변화)

  • Park, Hyun-June;Jang, Dong-Uk;Choi, Nam-Ho;Choi, Jong-Sun;Kim, Jung-Soo
    • Proceedings of the KIEE Conference
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    • 2003.07b
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    • pp.1285-1287
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    • 2003
  • The aging of the insulation reduces the electrical and mechanical strength of the insulation. At same point, a voltage surge or mechanical shock from a traction motor start will fracture or break down the insulation. To achieve the expected life usually requires extensive laboratory evaluation of the insulation systems and the use of accelerated aging tests. There are several nondestructive test available for checking. the condition of motor insulation, the probable extent of aging, and the rate of which aging is taking place. So the insulation characteristics of stator coil were each analyzed by measurement of dielectric loss($tan{\delta}$), capacitance and partial discharge. The method of diagnosis is able to analyze the aging condition and predict the life of the traction motor.

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Electrical Properties of Metal-Ferroelectric-Semiconductor Structures Based on Ferroelectric P(VDF-TrFE) Copolymer Film

  • Lee, Gwang-Geun;Park, Hyeong-Jin;Han, Hui-Seong;Park, Byung-Eun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.85-86
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    • 2007
  • A poly(vinylidene fluoride-trifluoroethyene) (P(VDF-TrFE)) copolymer thin film having ${\beta}$ phase was prepared by sol-gel method. The electrical properties of the film were studied to evaluate the possibility for appling to a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric-semiconductor) structure by evaporation of Au electrodes. The C-V (capacitance-voltage) measurement revealed that the Au/P(VDF-TrFE)/Si structure with a 4 wt% film had a memory window width of about 0.5V for a bias voltage sweep of 1V.

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A Simple ESR Measurement Method for DC Bus Capacitor Using DC/DC Converter (DC/DC 컨버터를 이용한 DC Bus 커패시터의 간단한 ESR 측정 기법)

  • Shon, Jin-Geun;Kim, Jin-Sik
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.59 no.4
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    • pp.372-376
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    • 2010
  • Electrolytic capacitors have been widely used in power electronics system because of the features of large capacitance, small size, high-voltage, and low-cost. Electrolytic capacitors, which is most of the time affected by aging effect, plays a very important role for the power electronics system quality and reliability. Therefore it is important to estimate the parameter of an electrolytic capacitor to predict the failure. The estimation of the equivalent series resistance(ESR) is important parameter in life condition monitoring of electrolytic capacitor. This paper proposes a simple technique to measure the ESR of an electrolytic capacitor. This method uses a switching DC/DC boost converter to measure the DC Bus capacitor ESR of power converter. Main advantage of the proposed method is very simple in technique, consumes very little time and requires only simple instruments. Simulation results are shown to verify the performance of the proposed method.

Top Electrodes Properties of SCT Thin Films (SCT 박막의 상부전극 특성)

  • 조춘남;김진사;전장배;유영각;김충혁
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.240-243
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    • 1999
  • (Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$thin films were deposited on Pt-coated TiO$_2$/SiO$_2$/Si wafer by the rf sputtering method. Experiments were conducted to investigate the electrical properties of SCT thin films with various top electrode. C-F and C-V measurements show that SCT thin films annnealed at 600$^{\circ}C$ have a larger capacitance than SCT thin films deposited at 400$^{\circ}C$ , and there is nearly no difference between top electrodes. I-V measurement show that Pt top electrode have a good leakage current density of < 10nA/$\textrm{cm}^2$,. making them suitable for DRAM application.

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Fabrication and Properties of Aluminum oxide/6H-SiC Structures using Sputtering Method (스퍼터링법을 이용한 산화알루미늄/6H-SiC 구조의 제작 및 특성)

  • Jung, Soon-Won;Choi, Haeng-Chul;Kim, Jae-Hyun;Jeong, Sang-Hyun;Kim, Kwang-Ho;Koo, Kyung-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.194-195
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    • 2006
  • Aluminum oxide films directly grown on n-type 6H-SiC(0001) substrates were fabricated by RF magnetron sputtering system. Metal-insulator-semiconductor(MIS) C-V properties with aluminum oxide thin films showed hysteresis and f1at band voltage shift. The dielectric constant of the film calculated from the capacitance at the accumulation region was about 5. Typical gate leakage current density of film at room temperature was the order of $10^{-9}\;A/cm^2$ at the range of within 2MV/cm. The breakdown did not occur at the film within the measurement range.

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Development and Its Characteristics of a Dissipation Factor Standard (손실계수 표준기 제작 및 그 특성)

  • Kim, Han-Jun;Kang, Jeon-Hong;Han, Sang-Ok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.527-528
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    • 2006
  • A dissipation factor standard of decade type having the range of 1 to 0.0001 at the frequency of 1 kHz and 10 kHz was fabricated using "T" networks combined R and C components. The values of the fabricated dissipation factor standard were adjusted within 1% of the nominal values at 0.0001 dial range and 0.05% at the others. This dissipation factor standard is used as a working standard for calibration of a impedance measurement meter at KRISS and as a primary standard of dissipation factor field at NML-SIRIM in Malaysia.

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Study on the ultra thin film of silicon oxyinitride deposited by plasma - assisted $N_2O$ oxidation in ICP-CVD reactor (ICP-CVD 반응기 내에서 $N_2O$ 플라즈마 산화법을 이용하여 증착된 ultra thin silicon oxynitride films 에 관한 연구)

  • Hwang, Sung-Hyun;Jung, Sung-Wook;Yi, J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.161-162
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    • 2006
  • Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using $N_2O$ in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) reported about Ellipsometric measurement, Capacitance-Voltage characterization and processing conditions.

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