• Title/Summary/Keyword: Capacitance component

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Application of Dielectric Sensor for Soil Moisture Measurement (토양 수분 측정을 위한 유전율식 쎈서 연구)

  • Oh, Yong-Taeg;Oh, Dong-Shig;Song, Kwan-Cheol;Shin, Jae-Sung;Im, Jung-Nam
    • Korean Journal of Soil Science and Fertilizer
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    • v.31 no.2
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    • pp.85-94
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    • 1998
  • Due to relatively high permittivity of water in soils, we placed the soil condenser into soils to measure the soil moisture content. The soil condenser was made with two insulated iron sticks. The capacitance of the soil condenser was determined by the pulse period from RC type oscillation circuit and the highest voltage output accepting 10MHz pulse. After zero point adjustment, the measured relative capacitance percentage (RCS) to the standard condenser obtained by the oscillation circuit almost linearly correlated with the end depth of the sensor submerged in water. The RC type oscillation was disturbed by many sensor installed in a close distance in one place, presumably resulting in that the sensor sticks played as a interfering antennas generating or accepting electron waves from them. The temperature dependance of the output from the sensors could be corrected through experimentally determined revision function. Although lineal correlation was found between soil moisture and RCS, users should derive their own correlation function for every sensor to measure soil moisture, because the outputs were influenced by the installation depth and layout in the soil. The voltage type sensor responded inversely with soil moisture content and so was not suitable to the accurate measurement of soil moisture, but allows high economic benefit in various application such as simplified measurement of soil moisture and irrigation line control because of its low component count. The voltage type moisture sensor could be reinforced by relay controlling circuit to open and to close the solenoid valves respectively at optimal limits of the least and the most soil moisture according to user's adjustment.

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Testing of Advanced Relaying and Design of Prototype IED for Power Transformer Protection (전력용 변압기 보호용 시제품 IED 설계와 개선된 기법의 시험)

  • Park, Chul-Won;Shin, Myong-Chul
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.55 no.1
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    • pp.6-12
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    • 2006
  • A popular method used by primary protection for power transformer is current ratio differential relaying (RDR) with 2nd harmonic restraints. In modern power transformer due to the use of low-loss amorphous material, the 2nd harmonic component during inrush is significantly reduced. The higher the capacitance of the high voltage status and underground distribution, the more the differential current includes the 2nd harmonic component during internal fault. Thus the conventional method may not operate properly. This paper proposes an advanced relaying algorithm and the prototype IED hardware design and it's real-time experimental results. To evaluate performance of the proposed algorithm, the study is well constructed power system model including power transformer utilizing the EMTP software and the testing is made through simulation of various cases. The proposed relaying that is well constructed using DSP chip and microprocessor etc. has been developed and the prototype IED has been verified through on-line testing. The results show that an advanced relaying based prototype IED never mis-operated and correctly identified all the faults and that inrushes that are applied.

A.C. Impedance Properties on $RuO_2$-Based Thick Film Resistors. ($RuO_2$계 후막저항체의 교류 임피던스특성)

  • Koo, Bon-Keup;Kim, Ho-Gi
    • Proceedings of the KIEE Conference
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    • 1990.07a
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    • pp.215-220
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    • 1990
  • A.C. impedance properties of $RuO_2$ based thick film resistors which having different resistivity value (DuPont 1721 : $100{\Omega}$/ sq., 1741 : $10K{\Omega}$/sq.) were investigated using by impedance analyzer. In case of lower resistivity 1721 system, the complex impedance was composed nearly R component for all speciman sintered at above $600^{\circ}C$, and the frequency dependancy on impedance was not affected very much up to 5MHz and again gradually increase with increasing the frequency. In case of higher resistivity 1741 resistor system, impedance properties were very depandant on sintering temperature. When sintering temperature was $600^{\circ}C$, the complex impedance plot shows a vertical line, which correspond to lone capacitance equivalant circuit, and the impedance linearly decreased with increasing frequency. In case of speciman sintered at $700-900^{\circ}C$, the complex impedance plot shows semi-circular are correspond to a lumped RC combination, and the impedance shows constant value to 5MHz, again decreased with increasing frequency. But the complex impedance behavior of speciman sintered at $1000^{\circ}C$ was shows the equivalent circuit correspont to parallel combined LCR component, and the impedance was not varied with frequency.

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The phase characteristic analysis of BALUN using a coaxial cable (동축 선로를 이용한 BALUN의 위상 특성 분석)

  • Park, Ung-hee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2017.10a
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    • pp.238-240
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    • 2017
  • Balun using a coaxial lines i often used in microwave circuits due to easy fabrication, high operating power, and stable operation. However, it is difficult to predict an accurate balun operation characteristic due to the parasitic reactance component to be generated when the coaxial line is connected to the microstrip line existing on the substrate, and the inductance and the capacitance component of the coaxial line itself. In this paper, it is measured the phase characteristics at two output ports of the coaxial line balun which should have opposite phase characteristics. Based on these results, it will examine closely the feasibility of making more improved coaxial line balun.

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Design and Analysis of 2 GHz Low Noise Amplifier Layout in 0.13um RF CMOS

  • Lee, Miyoung
    • Journal of Advanced Information Technology and Convergence
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    • v.10 no.1
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    • pp.37-43
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    • 2020
  • This paper presents analysis of passive metal interconnection of the LNA block in CMOS integrated circuit. The performance of circuit is affected by the geometry of RF signal path. To investigate the effect of interconnection lines, a cascode LNA is designed, and circuit simulations with full-wave electromagnetic (EM) simulations are executed for different positions of a component. As the results, the position of an external capacitor (Cex) changes the parasitic capacitance of electric coupling; the placement of component affects the circuit performance. This analysis of interconnection line is helpful to analyze the amount of electromagnetic coupling between the lines, and useful to choose the signal path in the layout design. The target of this work is the RF LNA enabling the seamless connection of wireless data network and the following standards have to be supported in multi-band (WCDMA: 2.11~ 2.17 GHz, CDMA200 1x : 1.84~1.87 GHz, WiBro : 2.3~2.4GHz) mobile application. This work has been simulated and verified by Cadence spectre RF tool and Ansoft HFSS. And also, this work has been implemented in a 0.13um RF CMOS technology process.

Current-Voltage and Impedance Characteristics of ZnO-Zn2BiVO6-Co3O4 Varistor with Temperature (ZnO-Zn2BiVO6-Co3O4 바리스터의 전류-전압 및 임피던스의 온도)

  • Hong, Youn Woo;Kim, You Bi;Paik, Jong Hoo;Cho, Jeong Ho;Jeong, Young Hun;Yun, Ji Sun;Park, Woon Ik
    • Journal of Sensor Science and Technology
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    • v.25 no.6
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    • pp.440-446
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    • 2016
  • This study introduces the characteristics of current-voltage (I-V) and impedance variance for $ZnO-Zn_2BiVO_6-Co_3O_4$ (ZZCo), which is sintered at $900^{\circ}C$, according to temperature changes. ZZCo varistor demonstrates dramatic improvement of non-linear coefficient, ${\alpha}=66$, with lower leakage current and higher insulating resistivity than those of ZZ ($ZnO-Zn_2BiVO_6$) from the aspect of I-V curves. While both systems are thermally stable up to $125^{\circ}C$, ZZCo represents a higher grain boundary activation energy with 1.05 eV and 0.94 eV of J-E-T and from IS & MS, respectively, than that of ZZ with 0.73 eV and 0.82 eV of J-E-T and from IS & MS, respectively, in the region above $180^{\circ}C$. It could be attributed to the formation of $V^*_o$(0.41~0.47 eV) as dominant defect in two systems, as well as the defect-induced capacitance increase from 781 pF to 1 nF in accordance with increasing temperature. On the other hand, both the grain boundary capacitances of ZZ and ZZCo are shown to decrease to 357 pF and 349 pF, respectively, while the resistances systems decreased exponentially, in accordance with increasing temperature. So, this paper suggests that the application of newly formed liquid phases as sintering additives in both $Zn_2BiVO_6$ and the ZZCo-based varistors would be helpful in developing commercialized devices such as chips, disk-type ZnO varistors in the future.

Electrical Stress in High Permittivity TiO2 Gate Dielectric MOSFETs

  • Kim, Hyeon-Seag;S. A. Campbell;D. C. Gilmer
    • Electrical & Electronic Materials
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    • v.11 no.10
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    • pp.94-99
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    • 1998
  • Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

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A Study on the Transient Characteristics in 765kV Untransposed Transmission Systems (765kV 비연가 송전계통 과도 특성에 관한 고찰)

  • 안용진;강상희
    • The Transactions of the Korean Institute of Electrical Engineers A
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    • v.53 no.7
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    • pp.397-404
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    • 2004
  • This paper describes a study of transient characteristics in 765kV untransposed transmission lines. As the 765(kV) system can carry bulk power, some severe fault on the system nay cause large system disturbance. The large shunt capacitance and small resistance of 765kv transmission line make various difficulties for its protection. These problems including current difference between sending and receiving terminals on normal power flow, low order harmonic current component in fault current and current transformer saturation due to the long DC time constant of the circuit etc. must be investigated and solved. The analysis of transient characteristics at sending terminal has been carried out for the single phase to ground fault and 3-phase short fault, etc. The load current, charging current in normal condition and line flows, fault current, THD(Total Harmonic Distortion) of harmonics, time constants have been analysed for the 765kV untransposed transmission line systems.

Super-High-Speed Lightwave Demodulation using the Nonlinearities of an Avalanche Photodiode

  • Park, Young-Kyu
    • KIEE International Transactions on Electrophysics and Applications
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    • v.2C no.5
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    • pp.273-278
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    • 2002
  • Even though the modulating signal frequency of the light is too high to detect directly, the signal can be extracted by frequency conversion at the same time as the detection by means of the non-linearity of the APD. An analysis is presented for super-high-speed optical demodulation by an APD with electronic mixing. A normalized gain is defined to evaluate the performance of the frequency conversion demodulation. The nonlinear effect of the internal capacitance was included in the small signal circuit analysis. We showed theoretically and experimentally that the normalized gain is dependent on the down converted difference frequency component. In the experiment, the down converted different frequency outputs became larger than the directly detected original signal for the applied local signal of 20㏈m.

Advanced Protective Relaying Algorithm by Flux-Differential Current Slope Characteristic for Power Transformer (전력용 변압기용 자속-차전류 기울기 특성에 의한 개선된 보호계전 알고리즘)

  • 박철원;신명철
    • The Transactions of the Korean Institute of Electrical Engineers A
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    • v.53 no.7
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    • pp.382-388
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    • 2004
  • The most widely used primary protection for the internal fault detection of power transformers is current percentage differential relaying(PDR). However, the harmonic components could be decreased by magnetizing inrush when there have been changes to the material of iron core or its design methodology. The higher the capacitance of high voltage status and underground distribution, the more differential current includes the second harmonic component during occurrence of an internal fault. Therefore, the conventional harmonic restraint methods need modification. This paper proposes an advanced protective relaying algorithm by fluxt-differential current slope characteristic and trend of voltage and differential current. To evaluate the performance of proposed algorithm, we have made comparative studies of PDR fuzzy relaying, and DWT relaying. The paper is constructed power system model including power transformer, utilizing the WatATP99, and data collection is made through simulation of various internal faults and inrush. As the results of test. the new proposed algorithm was proven to be faster and more reliable.