• Title/Summary/Keyword: Capacitance Sensor

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A Study on Electrical Characteristics for Horizontal Direction of Stearic Acid LB Films (Stearic Acid LB막의 수평방향에 대한 전기적 특성 연구)

  • 김도균;최용성;장정수;권영수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.393-396
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    • 1996
  • The electrical characteristics of stearic acid LB films far the horizontal direction were investigated to develop the gab sensor using LB films. $\pi$ -A isotherm was measured to transfer stearic acid on slide glass substrate and surface pressure for optimal deposition was 25[dyne/cm]. The deposition status of stearic acid LB films was verified by the measurement of capacitance which was increased with the number of layers. The thickness of electrode was estimated about 1000 by the I-V characteristics far the horizontal direction. The Conductivity of stearic acid LB films for horizontal direction was 10$^{-8}$ [S/cm] that mean like semiconductor.

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A Study on the Changes in Dielectric Constant of Engine Oil (엔진오일의 유전상수 변화에 관한 연구)

  • Chun Sang-Myung
    • Tribology and Lubricants
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    • v.22 no.2
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    • pp.99-104
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    • 2006
  • The dielectric constants of fresh engine oils were obtained according to various types of oil, temperatures and frequencies. Through analyzing the characteristics of dielectric constant, the related correlation between the changes in dielectric constant of oil and the degree of oil deterioration is going to be found. The dielectric constant was calculated by cross capacitances measured by a sensor tube. Before finding the correlation, as a prerequisites study, the best condition measuring the dielectric constant was found. In general, it was found that the value of dielectric constant became stable below $60^{\circ}C$ regardless frequency variation. Further, above 6kHz, the dielectric constant became stable even if temperature had been above $100^{\circ}C$.

Measurement of Dynamic Strains on Composite T-Joint Subjected to Hydrodynamic Ram Using PVDF Sensors (PVDF 센서를 이용한 수압램 하중을 받는 복합재 T-Joint의 동적 변형률 측정)

  • Go, Eun-Su;Kim, Dong-Geon;Kim, In-Gul;Woo, Kyeongsik;Kim, Jong-Heon
    • Composites Research
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    • v.31 no.5
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    • pp.238-245
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    • 2018
  • The hydrodynamic ram (HRAM) phenomenon is one of the main types of ballistic battle damages of a military aircraft and has great importance to airframe survivability design. The HRAM effect occurs due to the interaction between the fluid and structure, and damage can be investigated by measuring the pressure of the fluid and the dynamic strains on the structure. In this paper, HRAM test of a composite T-Joint was performed using a ram simulator which can generate HRAM pressure. In addition, calibration tests of PVDF sensor were performed to determine the circuit capacitance and time constant of the measurement system. The failure behavior of the composite T-Joint due to HRAM pressure was examined using the strain gauges and a PVDF sensor which were attached to the surface of the composite T-Joint.

Transparent and Flexible All-Organic Multi-Functional Sensing Devices Based on Field-effect Transistor Structure

  • Trung, Tran Quang;Tien, Nguyen Thanh;Seol, Young-Gug;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.491-491
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    • 2011
  • Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

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A Rotary Capacitive-Wireless Power Transfer System for Power Supply of a Wireless Sensor System on Marine Rotating Shaft (선박 회전축의 무선 센서 시스템의 전원 공급을 위한 회전식 정전용량-무선 전력 전송 시스템)

  • Van Ai Hoang;Young Chul Lee
    • Journal of Advanced Navigation Technology
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    • v.27 no.1
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    • pp.63-70
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    • 2023
  • In this work, a capacitive wireless power transfer (C-WPT) system is presented for wireless sensor system (WSS) applications in marine propulsion shafts. For a single Q factor on both sides of the coupling capacitor and reactive power removal from the circuit, a double-sided LCLC converter and transformers topology are designed to drive the rotary C-WPT system for WSS on the shaft. Parallel-connected parallel plate rotating capacitors with a capacitance of 170 pF are designed and implemented for the C-WPT system on a snow rotating shaft. In the experimental results, the C-WPT system achieved a transmission efficiency of 66.67% with 7.8 W output power at 3 mm distance and 1 MHz operating frequency. Therefore, it was proved that the fabricated C-WPT system can supply power to the WSS of the rotating shaft.

A Study on Alkali ion-Sensitivity of $Si_{x}O_{y}N_{z}$ Fabricated by Low Pressure Chemical Vapor Deposition (저압화학기상 성장법으로 제작된 $Si_{x}O_{y}N_{z}$의 알칼리이온 감지성에 관한 연구)

  • Shin, P.K.;Lee, D.C.
    • Journal of Sensor Science and Technology
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    • v.6 no.3
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    • pp.200-206
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    • 1997
  • Using $SiCl_{2}H_{2}$, $NH_{3}$ and $N_{2}O$, we have fabricated silicon oxynitride ($Si_{x}O_{y}N_{z}$) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios($NH_{3}/N_{2}O$)) to 0.2, 0.5 and 2 with fixed gas flow of $SiCl_{2}H_{2}$. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.

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CMOS ROIC for MEMS Acceleration Sensor (MEMS 가속도센서를 위한 CMOS Readout 회로)

  • Yoon, Eun-Jung;Park, Jong-Tae;Yu, Chong-Gun
    • Journal of IKEEE
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    • v.18 no.1
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    • pp.119-127
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    • 2014
  • This paper presents a CMOS readout circuit for MEMS(Micro Electro Mechanical System) acceleration sensors. It consists of a MEMS accelerometer, a capacitance to voltage converter(CVC) and a second-order switched-capacitor ${\Sigma}{\Delta}$ modulator. Correlated-double-sampling(CDS) and chopper-stabilization(CHS) techniques are used in the CVC and ${\Sigma}{\Delta}$ modulator to reduce the low-frequency noise and DC offset. The sensitivity of the designed CVC is 150mV/g and its non-linearity is 0.15%. The duty cycle of the designed ${\Sigma}{\Delta}$ modulator output increases about 10% when the input voltage amplitude increases by 100mV, and the modulator's non-linearity is 0.45%. The total sensitivity is 150mV/g and the power consumption is 5.6mW. The proposed circuit is designed in a 0.35um CMOS process with a supply voltage of 3.3V and a operating frequency of 2MHz. The size of the designed chip including PADs is $0.96mm{\times}0.85mm$.

New Control Method for Power Decoupling of Electrolytic Capacitor-less Photovoltaic Micro-Inverter with Primary Side Regulation

  • Irfan, Mohammad Sameer;Shin, Jong-Hyun;Park, Joung-Hu
    • Journal of Electrical Engineering and Technology
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    • v.13 no.2
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    • pp.677-687
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    • 2018
  • This paper presents a novel power decoupling control scheme with the bidirectional buck-boost converter for primary-side regulation photovoltaic (PV) micro-inverter. With the proposed power decoupling control scheme, small-capacitance film capacitors are used to overcome the life-span and reliability limitations of the large-capacitance electrolytic capacitors. Then, an improved flyback PV inverter is employed in continuous conduction mode with primary-side regulation for the PV power conditioning. The proposed power-decoupling controller shares the reference for primary side current regulation of the flyback PV inverter. The decoupling controller shapes the input current of the bidirectional buck-boost converter. The shared reference eliminates the phase-delay between the input current to the bidirectional buck-boost converter and the double frequency current at the PV primary current. The elimination of the phase-delay in dynamic response enhances the ripple rejection capability of the power decoupling buck-boost converter even with small film capacitor. With proposed power decoupling control scheme, the additional advantage of the primary-side regulation of flyback PV inverter is that there is no need to have an extra current sensor for obtaining the ripplecurrent reference of the decoupling current-controller of the power-decoupling buck-boost converter. Therefore, the proposed power decoupling control scheme is cost-effective as well as the size benefit. A new transient analysis is carried out which includes the source voltage dynamics instead of considering the source voltage as a pure voltage source. For verification of the proposed control scheme, simulation and experimental results are presented.

Bioelectrical Impedance Analysis at Popliteal Regions of Human Body using BIMS

  • Kim, J.H.;Kim, S.S.;Kim, S.H.;Baik, S.W.;Jeon, G.R.
    • Journal of Sensor Science and Technology
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    • v.25 no.1
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    • pp.1-7
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    • 2016
  • Bioelectrical impedance (BI) at popliteal regions was measured using a bioelectrical impedance measurement system (BIMS), which employs the multi-frequency and the two-electrode method. Experiments were performed as follows. First, a constant AC current of $800{\mu}A$ was applied to the popliteal regions (left and right) and the BI was measured at eight different frequencies from 10 to 500 kHz. When the applied frequency greater than 50 kHz was applied to human's popliteal regions, the BI was decreased significantly. Logarithmic plot of impedance vs. frequency indicated two different mechanisms in the impedance phenomena before and after 50 kHz. Second, the relationship between resistance and reactance was obtained with respect to the applied frequency using BI (resistance and reactance) acquired from the popliteal regions. The phase angle (PA) was found to be strongly dependent on frequency. At 50 kHz, the PA at the right popliteal region was $7.8^{\circ}$ slightly larger than $7.6^{\circ}$ at the left popliteal region. Third, BI values of extracellular fluid (ECF) and intracellular fluid (ICF) were calculated using BIMS. At 10 kHz, the BI values of ECF at the left and right popliteal regions were $1664.14{\Omega}$ and $1614.08{\Omega}$, respectively. The BI values of ECF and ICF decreased sharply in the frequency range of 10 to 50 kHz, and gradually decreased up to 500 kHz. Logarithmic plot of BI vs. frequency shows that the BI of ICF decreased noticeably at high frequency above 300 kHz because of a large decrease in the capacitance of the cell membrane.

A CMOS Switched-Capacitor Interface Circuit for MEMS Capacitive Sensors (MEMS 용량형 센서를 위한 CMOS 스위치드-커패시터 인터페이스 회로)

  • Ju, Min-sik;Jeong, Baek-ryong;Choi, Se-young;Yang, Min-Jae;Yoon, Eun-jung;Yu, Chong-gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.10a
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    • pp.569-572
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    • 2014
  • This paper presents a CMOS switched-capacitor interface circuit for MEMS capacitive sensors. It consist of a capacitance to voltage converter(CVC), a second-order ${\Sigma}{\Delta}$ modulator, and a comparator. A bias circuit is also designed to supply constant bias voltages and currents. This circuit employes the correlated-double-sampling(CDS) and chopper-stabilization(CHS) techniques to reduce low-frequency noise and offset. The designed CVC has a sensitivity of 20.53mV/fF and linearity errors less than 0.036%. The duty cycle of the designed ${\Sigma}{\Delta}$ modulator output increases about 5% as the input voltage amplitude increases by 100mV. The designed interface circuit shows linearity errors less than 0.13%, and the current consumption is 0.73mA. The proposed circuit is designed in a 0.35um CMOS process with a supply voltage of 3.3V. The size of the designed chip including PADs is $1117um{\times}983um$.

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