• 한국결정성장학회지
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• 제13권6호
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• pp.267-271
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• 2003

In this work, chemical solution derived Ca-doped zirconia fiber has been prepared by using calcium- and zirconium-naphthenate. Fibrous $ZrO_2$-CaO was drawn from a sticky mixture. Dried gel fibers were finally annealed at $1000^{\circ}C$ for 1 h in argon. 91 mol%$ZrO_2$-9 mol%CaO fiber consisted of tetragonal, monoclinic and $CaZrO_3$ phases after annealing at $1000^{\circ}C$. On the other hand, samples annealed at $500^{\circ}C$ consisted of almost tetragonal single phase. Homogeneous fibers surface at $500^{\circ}C$ became rougher after $1000^{\circ}C$-annealing. The sample annealed at $1000^{\circ}C$ with relatively rough surface structure showed a high Calcium phocphate forming ability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.1-4
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• 1994

In this study. the microwave dielectric properties, such at dielectric constant(${\varepsilon}_{\gamma}$), unloaded quality factor multiplied with resonant frequency($Q_{u}$.f), and temperature coefficient of resonant frequency(${\tau}_{f}$), were investigated for the low-temperature sintered (Pb, Ca)$ZrO_3$ with $V_2O_{5}$ additives as well as structural properties. As a result, (Pb,Ca)ZrO$_3$ with 0.2 wt% $V_2O_{5}$ additive, sintered at $1200^{\circ}C$, showed good properties like ${\varepsilon}_{\gamma}$ 109, $Q_{u}$.f 2736 GHz, and ${\tau}_{f}$ -2.94 ppm/$^{\circ}C$. Especially ${\tau}_{f}$ was much better than ($Pb_{0.63}Ca_{0.37}$)$ZrO_3$ of which ${\tau}_{f}$ was known to be + 13.4 ppm/$^{\circ}C$, so it seems to be applicated in micorowave device components.

• 한국전기전자재료학회논문지
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• 제30권4호
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• pp.199-203
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• 2017

$ZrO_2/PSS$ thin film with a high refractive index was fabricated on a glass substrate by a layer-by-layer self-assembly method. The surface morphology and thickness of the fabricated $ZrO_2/PSS$ thin films were measured as a function of the number of $(ZrO_2/PSS)n$. As the number of $(ZrO_2/PSS)n$ increased from n = 5 to n = 20, RMS roughness decreased from 29.01 nm to 8.368 nm. The $ZrO_2$ thin films exhibited high transmittance of 85% or more; and the 15-bilayer thin film exhibited the highest transmittance among the samples. The transmittance of the fabricated $(ZrO_2/PSS)_{15}$ thin film was ca. 90.8% in the visible range. The refractive index of the glass substrate coated by a $(ZrO_2/PSS)_{15}$ thin film with a thickness of 160 nm increased from ca. 1.52 to 1.74 at the 632 nm wavelength.

• 한국세라믹학회지
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• 제39권9호
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• pp.822-828
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• 2002

$ZrO_2$ 첨가량 변화에 따른 전기적 특성과 고주파 대용량 세라믹 캐패시터 제조공정 조건을 규명하기 위하여 고주파 대용량 세라믹 캐패시터의 제조 및 전기적 특성에 관하여 연구하였다. 단위 캐패시터는 테이프 캐스팅법으로 제조되었으며, 유전체 및 바인더의 최적조성은 57.5∼60.0: 42.5∼40.0 wt%이다. 슬러리의 점도는 4000∼5000 cps이며, 이 슬러리를 사용하여 제조한 그린 테이프는 뛰어난 캐스팅 상태를 유지하고 있다. 80$^{\circ}C$에서 200 kg/$cm^2$의 성형압으로 성형함으로서 최적의 적층 상태를 얻을 수 있었다. 단위 캐패시터의 전기적 특성, 특히 절연파괴 특성을 증진시키기 위하여 $ZrO_2$를 첨가하였다. $ZrO_2$ 첨가량이 1 wt%에서부터 5 wt%까지 첨가한 경우에는 단위 캐패시터의 유전상수 및 유전손실에 큰 영향을 미치지 못하였다. 또한 유전상수도 10 kHz에서 500 kHz 사이의 주파수 범위에서 큰 변호가 없었다. 내전압은 3 wt%를 첨가한 경우 $CaZrO_3$에 형성 및 입자크기 감소로 인하여 증진됨을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.75-78
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• 2002

The dielectric properties for Ni electrode multilayer ceramic chip capacitor for Y5V has been studied with $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_2+MnO_2$ 0.2wt%, $Y_2O_3$ 0.18wt%, $SiO_2$ 0.15wt%, glass frit 1 wt% composition. The m ratio in the range of 1.006 ~ 1.012 have dielectric constant 9,500 ~ 14,500 and insulation resistance 390 ~ 460 $G{\Omega}$. Using the dielectrics, nikel electrode multilayer chip capacitor with Y5V, 104Z in EIA 0603 size specific capacitance were developed.

• Transactions on Electrical and Electronic Materials
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• 제4권2호
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• pp.24-28
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• 2003

(Ba,Sr,Ca)TiO$_3$ powders, prepared by the sol-gel method, were mixed with organic binder and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. All the BSCT thick films, sintered at 1420$^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The average grain sizes decreased with increasing amounts of ZrO$_2$, and the BSCT(40/40/20) thick films doped with 2wt% MnO$_2$ showed a value of 8$\mu\textrm{m}$. The thickness of thick films by four-cycle on printing/drying was approximately 951$\mu\textrm{m}$. The relative dielectric constant decreased with increasing Ca content and MnO$_2$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 2.0wt% ZrO$_2$ were 772, 0.184％ and 15.62%, respectively.

• 한국분말재료학회지
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• 제29권2호
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• pp.110-117
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• 2022

The grain growth behavior in the (1-x)K_0.5Na_0.5NbO₃-xCaZrO₃ (KNNCZ-x) system is studied as a function of the amount of CZ and grain shape. The (1-x)K_0.5Na_0.5NbO₃-xCaZrO₃ (KNNCZ-x) powders are synthesized using a conventional solid-state reaction method. A single orthorhombic phase is observed at x = 0 - 0.03. However, rhombohedral and orthorhombic phases are observed at x = 0.05. The grain growth behavior changes from abnormal grain growth to the suppression of grain growth as the amount of CaZrO₃ (CZ) increases. With increasing CZ content, grains become more faceted, and the step-free energy increases. Therefore, the critical growth driving force increases. The grain size distribution broadens with increasing sintering time in KNNCZ-0.05. As a result, some large grains with a driving force larger than the critical driving force for growth exhibit abnormal grain growth behavior during sintering. Therefore, CZ changes the grain growth behavior and microstructure of KNN. Grain growth at the faceted interface of the KNNCZ system occurs via two-dimensional nucleation and growth.

• 한국세라믹학회지
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• 제16권3호
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• pp.135-141
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• 1979

This study seeks to find optimum conditions for the heating schedule of the Diopside-Devitrite system, to find the amounts and the kinds of nucleus which effect the crystal growth and forming nucleus. Generally, crystallization in the glass depends on the number of nucleus growing in the internal system and the rate of crystal growth. In order to obtain homogeneous polystalline phae, Diopside as MgO source and $ZrO_2$.$P_2O_5$, $TiO_2$, NaF, $CaF_2$ as nucleating agents were added to the $Na_2O$.CaO.$6SiO_2$ glass. The results obtained were Summarized as follows. 1) Optimum Batch Composition of base glass is 76.82 wt.% $SiO_2$, 5.84 wt.% CaO, 4.54 wt.% MgO and 9.80 wt.% $Na_2O$. 2) Best heating schedule.140$0^{\circ}C$(Melting)coolinglongrightarrow95$0^{\circ}C$reheatinglongrightarrow$1100^{\circ}C$coolinglongrightarrowRoom Temp. 3) The optimum amounts of $ZrO_2$.$P_2O_5$, $TiO_2$ and $CaF_2$ are 3wt.% and that of NaF is 4 wt.% as a nucleating agents.

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.1041-1047
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• 1997

In this paper the dielectric properties of (0.8-x)Pb(Mb$_{1}$3//Nb/2/3)O$_3$/BaTiO$_3$-CaZrO$_3$(x=0.1, 0.15, 0.2, 0.25) ceramics were investigated. Specimens were prepared by the conventional mixed oxide method and sintering temperature and time were 1000~115$0^{\circ}C$ 2hr, respectively. The structural and dielectric properties with variation of sintering temperature and composition were investigated. All the specimens sintered at 115$0^{\circ}C$ for 2hr showed the highest value of 1043. With increasing the contents of CZ and frequency dielectric constant was decreased and which was decreased with increasing temperature from 3$0^{\circ}C$ to 15$0^{\circ}C$.

• 한국세라믹학회지
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• 제44권5호
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• pp.173-178
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• 2007

The microstructure and microwave dielectric properties of dolomite type borates, $CaZr(BO_3)_2$ ceramics prepared by conventional mixed oxide method were explored. The sintering temperature of $CaZr(BO_3)_2$ ceramics could be reduced from $1150^{\circ}C\;to\;925^{\circ}C$ with little amount of sintering additives. Microwave dielectric properties of 3 wt% $Bi_2O_3-CuO$ added $CaZr(BO_3)_2$ ceramics sintered at $925^{\circ}C$ were $K{\approx}10.4,\;Q{\times}f{\approx}80,000GHz\;and\;TCF{\approx}+2ppm/^{\circ}C$. Thus obtained LTCC tape was co-fired with Ag paste for compatibility test and revealed no sign of Ag reaction with the ceramics. Therefore, $CaZr(BO_3)_2$ ceramics is considered as a possible candidate material for low temperature co-fired multilayer devices.