• Title/Summary/Keyword: Ca-doping

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Ionic Doping Effect in Bi-layered Perovskite SrBi2Nb2O9 Ferroelectrics (비스무스 층구조형 페로브스카이트 SrBi2Nb2O9 강유전체의 이온 치환 효과)

  • Park, S.E.;Cho, J.A.;Song, T.K.;Kim, M.H.;Kim, S.S.;Lee, H.S.
    • Korean Journal of Materials Research
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    • v.13 no.12
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    • pp.846-849
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    • 2003
  • Doping effect of various ions in Bi-layered ferroelectric $SrBi_2$$Nb_2$$O_{9}$ (SBN) ceramics was studied. Undoped SBN ceramic and SBN ceramics doped with $Ba^{2+}$, $Pb^{2+}$,$ Ca^{2+}$ , $Bi^{3+}$ , $La^{3+}$ , $Ti^{4+}$ , $Mo^{6+}$ , and $W^{6+}$ ions were made by a solid state reaction. Dielectric constants were measured with temperature. Ferroelectric transition temperature decreased with $Pb^{2+}$ , $Ba^{2+}$ , $La^{3+}$ doping, but the transition temperature increased with $Ca^{2+}$ , $Bi^{3+}$ , $Ti^{4+}$, $Mo^{6+}$ , or$ W^{6+}$ ionic doping. These results show that the ion size plays an important role in the ferroelectricity of SBN ceramic.

Luminescence Characteristics and Crystal Structure of CaWO4-Li2WO4-Eu2O3 Phosphors (CaWO4-Li2WO4-Eu2O3계 형광체의 PL 특성과 결정구조)

  • Kim, Jeong-Seog;Choi, Jin-Ho;Jeong, Bong-Man;Kang, Hyun-Ju
    • Journal of the Korean Ceramic Society
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    • v.43 no.1 s.284
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    • pp.10-15
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    • 2006
  • Photoluminescence (PL) and crystal structures of the $(l-x)CaWO_4-xLi_2WO_4$ binary system added with $Eu_2O_3$ activator have been characterized. The $CaWO_4\;and\;Li_2WO_4$ have the scheelite and phenakite structures respectively. The $CaWO_4-Li_2WO_4-Eu_2O_3$ phosphors show the red luminescence of 613 nm peak wavelength. The wavelength range of excitation spectral band is $380\~470$ nm with the peak wavelength of 397 nm. The $0.88(0.5CaWO_4-0.5Li_2WO_4)-0.12Eu_2O_3$ showed the most superior luminescence characteristics. The effect of co-doping elements such as $Al_2O_3$ and rare-earth oxides on PL has been characterized. The co-doping elements deteriorated the luminescence intensity except the $Al_2O_3$ and $Gd_2O_3$. The PL characteristics of $CaWO_4-Li_2WO_4-Eu_2O_3$ phosphors have been compared to those of the alkali europium double molybdates (tungstates) of scheelite-related structure such as $LiEu(MoO_4)_2$ and $CsEu(MoO_4)_2$. The crystal structures of $(l-y)[(l-x)CaWO_4-xLi_2WO_4]-yEu_2O_3$ phosphors have been characterized using XRD data and rietveld refinement.

Synthesis and Characterization of Nb, Mo-doped and Nb/Mo-codoped Monoclinic VO2 Nanoparticles and Their Thin Films by Hydrothermal/Post-Thermal Transformation and Wet-Coating Method

  • Kim, Jongmin;Jung, Young Hee;Kwak, Jun Young;Kim, Yeong Il
    • Journal of the Korean Chemical Society
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    • v.63 no.2
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    • pp.94-101
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    • 2019
  • Nb, Mo-doped and Nb/Mo-codoped $VO_2(M)$ nanocrystallites with various doping levels were synthesized for the first time by a hydrothermal and post thermal transformation method. The reversible phase transition characteristics of those doped $VO_2(M)$ was comparatively investigated. Nb-doping of $VO_2(M)$ by this method resulted in a very efficient lowering of the transition temperature ($T_c$) with a rate of $-16.7^{\circ}C/at.%$ that is comparable to W-doping, while Mo-doping did not give a serious reduction of $T_c$ with only a rate of $-5.1^{\circ}C/at.%$. Nb/Mo-codoping gave a similar result to Nb-doping without a noticeable difference. The thin films of Nb-doped and Nb/Mo-codoped $VO_2(M)$ with a thickness of ca. 120 nm were prepared by a wet-coating of the nanoparticle-dispersed solutions. Those films showed a good thermochromic modulation of near infrared radiation with 30-35% for Nb-doped $VO_2(M)$ and 37-40% for Nb/Mo-codoped ones. Nb/Mo-codoped $VO_2(M)$ film showed slightly enhanced thermochromic performance compared with Nb-doped $VO_2(M)$ film.

Luminescent Properties of (Zn1-xCax)2SiO4:Mn,Al Green Phosphors for Various Concentration ((Zn1-xCax)2SiO4:Mn 녹색 형광체의 농도 변화에 따른 발광특성)

  • Yu, Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.4
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    • pp.323-326
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    • 2010
  • $(Zn_{1-x}Ca_x)_2SiO_4$:Mn phosphors doped with Ca were synthesized by solid state reaction method. $(Zn_{1-x}Ca_x)_2SiO_4$:Mn phosphors showed XRD patterns of Willemite structure. Also, $CaSiO_3$ structure and new peak near 610 nm in $(Zn_{1-x}Ca_x)_2SiO_4$:Mn with increasing value of x were observed from XRD and PL. The new peak near 610 nm in $(Zn_{1-x}Ca_x)_2SiO_4$:Mn with doping Ca was attributed to formation of $CaSiO_3$.

Dielectric properties of $BaTiO_3$ system Ceramics Doped with $Al_{2}O_{3}$ ($BaTiO_3$계 세라믹의 $Al_{2}O_{3}$ 첨가에 따른 유전 특성)

  • Heo, Young-Sik;Lee, Won-Sub;Lee, Sung-Gap
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.402-405
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    • 2001
  • $(Ba_{0.6-x}Sr_{0.4}Ca_{x})TiO_{3}$ (x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their stuctural and dielectric properties were investigated with variation of composition ratio and an amount of $Al_{2}O_{3}$ (0.5, 1.0, 1.5. 2.0, 3.0 wt%) doping content. As a result of the X-ray diffraction BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with increase an $Al_{2}O_{3}$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing an amount of $Al_{2}O_{3}$ doping content. The dielectric loss is minimum for BSCT doped with 1.5wt% $Al_{2}O_{3}$ content. The tunability was decreased with increasing an Ca content and is about 4.2% for BSCT(50/40/10) doped with 2.0wt% $Al_{2}O_{3}$ content.

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Dielectric properties of BaTiO$_3$ system Ceramics Doped with $Al_2$O$_3$ (BaTiO$_3$계 세라믹의 $Al_2$O$_3$ 첨가에 따른 유전 특성)

  • 허영식;이원섭;이성갑
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.402-405
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    • 2001
  • (Ba$\_$0.6-x/Sr$\_$0.4/Ca$\_$x/)TiO$_3$(x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties were investigated with variation of composition ratio and an amount of Al$_2$O$_3$(0.5, 1.0, 1.5, 2.0, 3.0 wt%) doping content. As a result of the X-ray diffraction BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with increase an Al$_2$O$_3$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing an amount of Al$_2$O$_3$ doping content. The dielectric loss is minimum for BSCT doped with 1.5wt% Al$_2$O$_3$ content. The tunability was decreased with increasing an Ca content and is about 4.2% for BSCT(50/40/10) doped with 2.0wt% Al$_2$O$_3$ content.

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Effect of Ca-doping on the superconducting properties of Nd-Ba-Cu-O bulks (Nd-Ba-Cu-O 벌크 초전도체의 초전도 특성에 미치는 Ca첨가제의 영향)

  • 이훈배;위성훈;유상임
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2002.02a
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    • pp.346-350
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    • 2002
  • The effect of Ca-doping on the superconducting properties of Nd-Ba-Cu-O bulk superconductors, fabricated by the oxygen-controlled melt growth process, has been systematically investigated. Various c-axis textured bulk samples were grown using precursors with the nominal compositions of N $d_{1.8-x}$C $a_{x}$B $a_{2.4}$C $u_{3.4}$ $O_{y}$ (x = 0.00, 0.02, 0.05, 0.10, 0.15) in a reduced oxygen atmosphere of 1% $O_2$ in Ar. Magnetization measurements revealed that the critical temperatures( $T_{c}$) were almost linearly depressed from 95K to 86K with increasing the Ca dopant from x = 0.0 to 0.15, respectively, and thus critical current densities( $J_{c}$) at 77K and for H//c-axis of specimens were gradually degraded with increasing x. Compositional analyses revealed that although the amounts of the Ca dopant both in NdB $a_2$C $u_3$ $O_{y}$(Nd123) and N $d_4$B $a_2$C $u_2$ $O_{10}$(Nd422) were increased with increasing x, only less than half of the initial Ca compositions were detected in melt-grown Ca-doped Nd-Ba-Cu-O bulk crystals. The supression of $T_{c}$ is attributed to an increased Nd substitution for the Ba site in the Nd123 superconducting matrix with increasing the amount of the Ca dopant.t.opant.t.t.t.t.t.

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Microwave Dielectric Properties of BSCT Thick Films with Addition of $Nb_2O_5$

  • Kang, Jeong-Min;Cho, Hyun-Moo;Lee, Sung-Gap;Park, Sang-Man;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.632-635
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    • 2003
  • [ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The dielectric properties were investigated for various composition ratio and $Nb_2O_5$ doping contents. All the BSCT thick films, sintered at $1420^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The Curie temperature and the relative dielectric constant decreased with increasing Ca content and $Nb_2O_5$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 1.0wt% $Nb_2O_5$ were 1410, 0.65% and 17.29% respectively.

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PREPARATION AND CHARACTERIZATION ON THIN FILMS OF DOPED IRON OXIDE PHOTOSEMICONDUCTIVE ELECTRODES. (얇은막 산화철 광반도성 전극의 제조와 그 특성)

  • Kim, Il-Kwang;Kim, Yon-Geun;Park, Tae-Young;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.05a
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    • pp.104-108
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    • 1993
  • Thin films of MgO-doped and CaO-doped iron oxide were prepared y spray pyrolysis. The films were characterized b X-ray diffraction, scanning electron microscopy and voltammetric techniques. The photoelectrochemical behavior of thin film electrodes depended greatly on the doping level, sintering temperature, substrate temperature and added photosensitizing compounds in solution, showed p-type photoelectrochemical behavior, while the CaO-doped iron oxide thin films prepared at low temperature showed n-type photoelectrochemical behavior. This characteristic change was interpreted in terms of the surface structure change of the thin films and doping effect of metal oxide.

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