• Title/Summary/Keyword: CZTSSe film

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III-V Tandem, CuInGa(S,Se)2, and Cu2ZnSn(S,Se)4 Compound Semiconductor Thin Film Solar Cells (3-5족 적층형과 CuInGa(S,Se)2 및 Cu2ZnSn(S,Se)4 화합물반도체 박막태양전지)

  • Jeong, Yonkil;Park, Dong-Won;Lee, Jae Kwang;Lee, Jaeyoung
    • Applied Chemistry for Engineering
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    • v.26 no.5
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    • pp.526-532
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    • 2015
  • Solar cells with other alternative energies are being importantly recognized related with post-2020 climate change regime formation. In a point of view of materials, solar cells are classified to organic and inorganic solar cells which can provide a plant-scale electricity. In particular, recent studies about compound semiconductor solar cells, such as III-V tandem solar cells, chalcopyrite-series CIGSSe solar cells, and kesterite-series CZTSSe solar cells were rapidly accelerated. In this report, we introduce a research trend and technical issues for the compound semiconductor solar cells.

Improving the Efficiency of SnS Thin Film Solar Cells by Adjusting the Mg/(Mg+Zn) Ratio of Secondary Buffer Layer ZnMgO Thin Film (2차 버퍼층 ZnMgO 박막의 Mg/(Mg+Zn) 비율 조절을 통한 SnS 박막 태양전지 효율 향상)

  • Lee, Hyo Seok;Cho, Jae Yu;Youn, Sung-Min;Jeong, Chaehwan;Heo, Jaeyeong
    • Korean Journal of Materials Research
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    • v.30 no.10
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    • pp.566-572
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    • 2020
  • In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.