• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.380.2-380.2
• /
• 2014

Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial. Here, we present the effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.

• Korean Journal of Materials Research
• /
• v.15 no.4
• /
• pp.246-251
• /
• 2005

Plasma enhanced chemical vapor deposition(PE-CVD) method has an advantage in synthesizing carbon nanotubes(CNTs) at lower temperature compared with thermal enhanced chemical vapor deposition(TE-CVD) method. In this study, CNTs was prepared by using PE-CVD method. The growth rate of CNT was faster more than 100 times on using Invar alloy than iron as catalyst. It was found that chrome silicide was formed at the interface between chrome layer and silicon substrate which should be considered in designing process. Nanoparticles of Invar catalyst were found oxidized on their surfaces with a depth of 10 m. Microstructure was analyzed by scanning electron microscopy, transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray spectrometry. Based on the result of analysis, growth mechanism at an initial stage was suggested.

• Korean Journal of Materials Research
• /
• v.13 no.7
• /
• pp.436-441
• /
• 2003

The characteristics of <112> orientation were studied for the $TiO_2$thin films, which were prepared on the glass by CVD (chemical vapor deposition) at various substrate temperatures. It was confirmed that $TiO_2$ films exhibited <112>-preferred orientation in a specific temperature range. Although $TiO_2$polycrystalline film grown deposited at relatively low temperature showed the growth of random directions, the <112>-preferred orientation was gradually developed with increasing deposition temperature. According to exhibit higher degree of <112>-preferred orientation, $TiO_2$thin film showed porous surface morphology, well-developed columnar structure, and deeper voids resulted from non-aggregation of columns were observed. In addition, transmittance was enhanced. Therefore, the growth of $TiO_2$with <112>-preferred orientation is suitable for glass coating because of predominance of photocatalytic efficiency and transmittance.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1533-1535
• /
• 2002

Carbon nanotubes (CNTs) were grown with high density on a large area of Ni-coated silicon oxide substrates by using an inductively coupled plasma-chemical vapor deposition (ICP-CVD) of $C_2H_2$ at temperatures ranging from 600 to $700^{\circ}C$. The Ni catalyst was formed using an RF magnetron sputtering system with varying the operating pressure and exposure time of $NH_3$ plasma. The surface morphology of nickel catalyst films and CNTs was examined by SEM and AFM. The graphitized structure of CNTs was confirmed by Ramman spectra, SEM, and TEM. The growth of CNTs was observed to be strongly influenced by the surface morphology of Ni catalyst, which depended on the pre-treatment time and growth temperature. Dense CNTs with uniform-sized grains were successfully grown by ICP-CVD.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.4
• /
• pp.215-221
• /
• 2002

Epitaxial Si layers were deposited on (100) Si substrates by hot-wall chemical vapor deposition (CVD) technique using the $SiH_2Cl_2/H_2$chemistry. Thermochemical calculations of the Si-H-Cl system were carried out to predict the window of actual Si deposition process and to investigate the effects of process variables (i.e., deposition temperature, reactor pressure, and input gas molar ratio ($H_2/SiH_2Cl_2$)) on the epitaxial growth. The calculated results were in good agreement with the experiment. Optimum process conditions were found to be the deposition temperature of 850~$950^{\circ}C$, the reactor pressure of 2~5 Torr, and the input gas molar ratio ($H_2/SiH_2Cl_2$) of 30~70, providing device-quality epitaxial layers.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.490-490
• /
• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.2
• /
• pp.197-206
• /
• 1997

A SiC epilayer on the 6H-SiC crystal substrate was grown by chemical vapor deposition (CVD). The crystal structure of the SiC epilayer was investigated by using the X-ray diffraction patterns and the Roman scattering spectroscopy. The SiC epilayer on the 6H-SiC substrate was grown to be homoepilayer by CVD. In order to distinguish a certain SiC polytype mixed in the SiC crystal grown by the modified Lely method, we have calculated the X-ray diffraction intensities and Brags angles of the typical SiC crystal powders. By comparing the measured X-ray diffraction pattern with the calculated ones, it was identified that the SiC crystal grown by the modified Lely method was the 6H-SiC crystal mixed some 15R-SiC.

• Carbon letters
• /
• v.12 no.4
• /
• pp.185-193
• /
• 2011

Carbon nanotubes (CNTs) have developed into one of the most competitively researched nano-materials of this decade because of their structural uniqueness and excellent physical properties such as nanoscale one dimensionality, high aspect ratio, high mechanical strength, thermal conductivity and excellent electrical conductivity. Mass production and structure control of CNTs are key factors for a feasible CNT industry. Water and ethanol vapor enhance the catalytic activity for massive growth of vertically aligned CNTs. A shower system for gas flow improves the growth of vertically aligned single walled CNTs (SWCNTs) by controlling the gas flow direction. Delivery of gases from the top of the nanotubes enables direct and precise supply of carbon source and water vapor to the catalysts. High quality vertically aligned SWCNTs synthesized using plasma enhance the chemical vapor deposition technique on substrate with suitable metal catalyst particles. This review provides an introduction to the concept of the growth of vertically aligned SWCNTs and covers advanced topics on the controlled synthesis of vertically aligned SWCNTs.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.3
• /
• pp.289-294
• /
• 1999

The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to from in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also phase synthesis of the nanoparticels. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles in the gas phase. Charge clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVD process. The epitaxial sticking of the charged clusters on the growing surface is getting difficult as the cluster size increases, resulting in the nanostructure such as cauliflower or granular structures.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.207-207
• /
• 2013

기존의 그래핀 성장에 관한 연구는 열화학기상증착법(Chemical vapor deposition; CVD)을 이용한다. 그래핀 성장 제어 요소로는 촉매 기판인 전이 금속[Ru, Ir, Co, Re, Pt, Pd, Ni, Cu], 기판 전처리 과정, 수소/메탄 가스 혼합비, 작업 진공 상태, 기판온도[$800{\sim}1,000^{\circ}C$, 냉각 속도 등으로 보고 되고 있다. 그래핀 성장 원리는 Cu 촉매 기판에 메탄 가스를 $1,000^{\circ}C$ 온도에서 분해해서 탄소를 고용 시킨 후 급랭하는 도중에 석출되는 탄소에 의해 그래핀 시트가 형성되는 것으로 알려져 있다. 기존의 CVD를 열원을 이용할 경우 내부 챔버에 생기는 잠열에 의해 cooling profile의 제어가 용이하지 않다. 본 연구에서는 근적외선(Near Infrared; NIR) 열원을 이용한 CVD로 챔버 내부 잠열을 최소화하고, 냉각 공정을 Natural, Linear, Convex cooling type으로 디자인해서 cooling profile 제어가 그래핀 성장에 미치는 영향을 연구 하였다. 이렇게 성장된 그래핀을 임의의 기판(SiO2, Glass, PET film) 위에 습식방법으로 전이 시킨 후, 전기적 구조적 및 광학적 특성을 면저항(four-point probe), 전계방사 주사전자현미경(Field Emission Scanning Electron Microscope; FE-SEM), 마이크로 라만 분광법(Micro Raman spectroscopy) 및 광학현미경(optical microscope), 투과도(UV/Vis spectrometer)의 측정으로 잠열이 최소화된 NIR-CVD에서 cooling profile에 따른 그래핀 성장을 평가하였다.