• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.385-388
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• 1999

Electron field emission properties from various CVD diamond films were studied. Diamond films were synthesized by microwave plasma CVD at 1173K and at 673K substrates temperature and pulse microwave plasma CVD at 1173K. B-doped diamond film was synthesized by microwave plasma CVD at 1173K also. Estimation by SEM, both the non-doped diamond film and B-doped diamond film which were synthesized at 1173K substrate temperature were $2~3\mu\textrm{m}$ in diameter and nucleation densities were $10^{8}{\;}numbers/\textrm{cm}^2$ order. The diamond film synthesized at 673K was $0.2\mu\textrm{m}$ in diameter and nucleation densities was 109 numbers/cm2 order. The diamond film synthesized by pulse microwave plasma CVD at 1173K was $0.2\mu\textrm{m}$ in diameter and nucleation density was $10^{9}{\;}numbers/\textrm{cm}^2$ order either. From the result of electron field emission measurement, electron field emission at $20V/\mu\textrm{m}$ from CVD diamond film synthesized by pulse microwave plasma CVD was $37.3\mu\textrm{A}/\textrm{cm}^2$ and the diamond film showed the best field emission property comparison with other CVD diamond.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.212-215
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• 1996

This paper focuses the strength and wear resistance of CVD diamond films. The strength of free-standing CVD diamond films synthesized by microwave plasm CVD, DC plasma CVD, RF plasma CVD and arc discharge plasma jet CVD has been measured by three-point bending test. The wear resistance of CVD diamod films has been evaluated by the pin-on-disk type testing. diamond films coated on the base of sintered tungsten carbide pin by hot filament CVD have been rubbed with a sintered diamond disk in muddy water. Volume removed wear of CVD diamond has been compared with stellite, WC alloy and bearing steel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.192-195
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• 2019

Single-crystal diamond obtained by chemical vapor deposition (CVD) exhibits great potential for use in next-generation power devices. Low defect density is required for the use of such power devices in high-power operations; however, plastic deformation and lattice strain increase the dislocation density during diamond growth by CVD. Therefore, characterization of the dislocations in CVD diamond is essential to ensure the growth of high-quality diamond. In this work, we analyze the characteristics of the dislocations in CVD diamond through synchrotron white beam X-ray topography. In estimate, many threading edge dislocations and five mixed dislocations were identified over the whole surface.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1997.04a
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• pp.69-73
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• 1997

Microwave Plasma assisted CVD (Chemical Vapor Deposition) and DC Plasma CVD were used to prepare thin and thick diamond film, respectively. Diamond coated silicon nitride and fiee standing diamond thick film were eroded by silicon carbide particles. The velocity of the solid particle was about 220m/sec. Phase transformation and the other crack formation were investigated by using Raman spectroscopy and microscopy.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.350-356
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• 2014

Recently, Chemical Vapor Deposition (CVD) synthetic diamonds have been introduced to the jewelry gem market, as CVD technology has been making considerable advances. Unfortunately, CVD diamonds are not distinguishable from natural diamonds when using the conventional gemological characterization method. Therefore, we need to develop a new identification method that is non-destructive, fast, and inexpensive. In our study, we employed optical microscopy and spectroscopy techniques, including Fourier transform infra-red (FT-IR), UV-VIS-NIR, photoluminescence (PL), micro Raman, and cathodoluminescent (CL) spectroscopy, to determine the differences between a natural diamond (0.30 cts) and a CVD diamond (0.43 cts). The identification of a CVD diamond was difficult when using standard gemological techniques, UV-VIS-NIR, or micro-Raman spectroscopy. However, a CVD diamond could be identified using a FT-IR by the Type II peaks. In addition, we identified a CVD diamond conclusively with the uneven UV fluorescent local bands, additional satellite PL peaks, longer phosphorescence life time, and uneven streaks in the CL images. Our results suggest that using FT-IR combined with UV fluorescent images, PL, and CL analysis might be an appropriate method for identifying CVD diamonds.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.203-211
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• 1996

CVD diamond tools are becoming more widely used in industry as an economic alternative to polycrystalline diamond (PCD) for machining non-ferrous and non-metallic materials. Although CVD diamond-sheet tools have been on the market for several years, diamond-coated carbide inserts have become available only recently, with the successful resolution of long-standing adhesion problems. Diamond coating morphology on the rake surface of the tool affects chip formation favorably, whereas a microscopically rough, faceted morphology on the flank surface of the tool produces a rough workpiece finish. Workpiece finish can be improved by using a coated tool with a larger nose radius. The tool life provided by diamond-coated tools(~30 $\mu\textrm{m}$ thick) can meet or exceed that of PCD tools, depending on the characteristics of the workpiece material. When using diamond-coated carbide tools in milling, a sharp-edged PCD tool should be used in the wiper position of the cutter to minimize workpiece roughness and burr formation.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1503-1505
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• 2000

To grow the diamond films by using RF-MW mix-process, at first, diamond seeds were deposited on silicon substrate by RF plasma CVD, and then a diamond layer grown by MW plasma CVD on the seeds. The grain-size of diamond films deposited by using HF-MW mix-process was smaller and denser than those of the MW plasma CVD process. The deposited diamond films were analyzed by scanning electron microscophy, X-ray diffractometer and Raman spectroscopy.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.303-306
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• 1999

On the effect of substrate bias at first stage of diamond synthesis at lower substrate temperature(approximately 673K) using microwave plasma CVD and effect of reaction gas system for the bias enhanced nucleation were studied. The reaction gas was mixture of methane and hydrogen or carbon monoxide and hydrogen. The nucleation density of applied bias -150V using $CH_4-H_2$ reaction gas system, significantly higher than that of $C-H_2$ reaction gas system. When the $CH_4-H_2$ reaction was used, nucleation density was increased because of existence of SiC as a interface for diamond nucleation. By use of this negative bias effect for fabrication of CVD diamond film using two-step diamond growth without pre-treatment, fabrication of the diamond film consist of diamond grains $0.2\mu\textrm{m}$ in diameter was demonstrated

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.6-11
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• 2004

The characteristics of interface layer and the effect of bias voltages on the nucleation density and heteroepitaxial growth of diamond films were studied in the hot filament CVD diamond process. Diamond films were deposited on a high speed steel (SKH-51) substrate by bias-assisted hot filament CVD technique with a titanium interlayer. The bias applied for enhancing the emission of electrons from the filament increased the nucleation density and achieving heteroepitaxial growth of CVD diamond. Diamond films obtained at a gas pressure of 20 torr; a bias voltage of 200 V and a substrate temperature of $700^{\circ}C$. Titanium was a suitable element as an interlayer for the diamond deposition on steel because it has high diffusivity of Fe and C as a carbide forming element.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1233-1239
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• 1998

Gas phase compositions of the hot filament-assisted diamond CVD reaction were analyzed by on-line quadrupole mass analysis(QMA) technique. D2 isotope experiments showed that methance molecules were decomposed into atomic state and then recombined in to acetylene during transport the probe line. Although acetylene or ethylene was supplied instead of methane similar gas compositions were obtained when filament temperature was above 1500$^{\circ}C$ Therefore this system could be assumed near thermal equilibrium state. Filament temperature and reaction pressure variation experiments exhibited the same tendency between acetylene concentration and diamond growth rate and these results implied that acetylene molecule played the role of the reactive species in the diamond CVD reaction.