• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1067-1073
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• 1998

High quality diamond films of the silicon on diamond (SOD) structure are deposited using CO and $H_2$ gas mixture in microwave plasma chemical vapor deposition (CVD), a SOD structure is fabricated using low pressure CVD polysilicon on diamond/ Si(100) substrate. The crystalline structure of the diamond films which composed of { 111} and {100} planes. were changed from octahedral one to cubo-octahedron one as the CO/$H_2$ ratios are increased. The high quality diamond films without amorphous carbon and non-diamond elements were deposited at the CO/$H_2$ flow rate of 0.18. and the main phase of the diamond films shows (111) plane. The diamond/Si(lOO) structure shows that the interface is flat without voids. The measured dielectric constant. leakage current and breakdown field were $5.31\times10^{-9}A/cm^2$ and $9\times{10^7}{\Omega}cm$ respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.147-152
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• 2002

A new theory of thin film growth was suggested, where charged clusters of nanometer size are generated in the gas phase and are a major flux for thin films. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in metal evaporation. These results imply new insights as to the microstructure control of thin films. Based on this new understanding, the low temperature deposition of crystalline and amorphous silicon can be approached systematically.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.115-127
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• 1999

The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to form in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also used in the gas phase synthesis of the nanoparticles. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles inthe gas phase. Charged clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVDd process. The epitaxial sticking of the charged clusters on the growing surface is gettign difficult as the cluster size increases, resulting in the nanostructure such as cauliflowr or granular structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.607-612
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• 1998

RF HPCVD(Helicon Plasma Chemical Vapor Deposition) has been successfully constructed for diamond thin films. The system consists of plasma generation tube, deposition chamber, pumping lines for gas system. A mixture of $CH_4 and H_2$is used for reaction. Two thermocouples, a quartz tube surrounded by a RF antenna and a magnet, and a high temperature heater were set up in the deposition chamber. The process for the thin film diamond deposition has been carried put in a high vacuum system at a substrate temperature of $800^{\circ}C$, and pressure of 5 mtorr. It is also demonstrated. that the RF HPCVD system has advantages for controlling deposition parameters easily.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.1
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• pp.25-32
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• 2020

In this study, the tribology of laser patterned DLC thin film was studied. DLC thin films were coated by RF-PECVD to improve the durability of tungsten carbide (WC) materials. DLC thin films have high hardness and low friction characteristics. Dot and line patterning was processed on the surface of DLC thin film with femtosecond laser, and the coefficient of friction was improved. As a result of ball on disk abrasion test, the hardness and friction coefficient of DLC thin films were much better than that of WC material. The friction coefficient of DLC thin film with dot patterning and line patterning showed better results. The excellent performance of the laser patterned DLC coating is appeared to reduce the coefficient of friction due to the reduction of surface contact area.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.27-32
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• 2004

The diamond-like carbon (DLC) films were deposited on the Si (100) wafer by a rf-PECVD method as a function of the mixture rate of methane-hydrogen gas and bias voltage. The bonding structure and mechanical properties of these deposited DLC films were investigated using FT-IR, Raman, and nano-indenter. The deposition rates of DLC films increased with increased flow rate of methane in the gas mixtures and increased bias voltage. The $sp^3/sp^2$ bonding ratio of carbon in thin film and the hardness increased with increasing flow rate of hydrogen in the gas mixtures and increasing bias voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.289-292
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• 1998

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including CH$_4$ concentrations, Oxygen additions, Operating pressure, deposition time, etc. on the growth rate and crystallinity were investigated. The best crystallinity of the finn at 3% methane concentration addition of oxygen to the CH$_4$-$H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure and time, the growth rate and crystallinity were increased simultaneously.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2005.05a
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• pp.395-400
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• 2005

Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin damaged layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The damaged layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.8 s.185
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• pp.39-46
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• 2006

Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin mask layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The mask layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2003.10a
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• pp.181-184
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• 2003

본 연구에서는 열 필라멘트 화학증착 방법에 의한 나노 다이아몬드 박막 증착을 위해 핵 생성 밀도를 증가시키기 위해서 다이아몬드 특성을 갖는 탄소(Diamond-Like Carbon)박막들을 연속 및 펄스 플라즈마를 이용한 화학 증착법에 의하여 증착하여 그 특성을 SEM, XPS, Raman 및 Nano-Tester를 이용하여 분석하였으며 열 필라멘트 화학 증착법에 의하여 나노 다이아몬드 박막 형성에 대한 핵 밀도와 다아이몬드 특성을 갖는 탄소 박막의 특성의 연관성을 관찰하여 공구(WC-Co)의 표면 사전 처리 없이 나노 다이아몬드 박막 형성을 용이하게 하는 실험을 수행하였다.