• Korean Journal of Materials Research
• /
• v.8 no.2
• /
• pp.131-134
• /
• 1998

The deposition rate and surface morphology of Al films deposited by MOCVD have been studied on the $SiO_{2}$ and TiN(60nm/Si) substrates. A1 films were deposited with the pyrolysis of dimethylethylamine alane(DMEAA). When A1 was deposited on Ti& substrate without carrier gas, Al deposition rate increased with H\ulcorner pre- treatment. The $H_2$ gas enhances the CVD reaction at the substrate surface. When Al was deposited on $SiO_{2}$ substrate, $H_2$ plasma pretreatment reduced Al incubation time and made a dense Al film compared with Ar plasma pre- treatment or no pretreatment.

• Journal of the Korean Ceramic Society
• /
• v.52 no.6
• /
• pp.441-448
• /
• 2015

Silicon carbide (SiC) coatings for tri-isotropic (TRISO) nuclear fuel particles were fabricated using a chemical vapor deposition (CVD) process onto graphite. A micro-tensile-testing system was developed for the mechanical characterization of SiC coatings at high temperatures. The fracture strength of the SiC coatings was characterized by the developed micro-tensile test in the range of $25^{\circ}C$ to $1000^{\circ}C$. Two types of CVD-SiC films were prepared for the micro-tensile test. SiC-A exhibited a large grain size (0.4 ~ 0.6 m) and the [111] preferred orientation, while SiC-B had a small grain size (0.2 ~ 0.3 mm) and the [220] preferred orientation. Free silicon (Si) was co-deposited onto SiC-B, and stacking faults also existed in the SiC-B structure. The fracture strengths of the CVD-SiC coatings, as measured by the high-temperature micro-tensile test, decreased with the testing temperature. The high-temperature fracture strengths of CVD-SiC coatings were related to the microstructure and defects of the CVD-SiC coatings.

• Composites Research
• /
• v.36 no.5
• /
• pp.342-348
• /
• 2023

There has been increasing demand for real-time monitoring of body and ambient temperatures using wearable devices. Graphene-based thermistors have been developed for high-performance flexible temperature sensors. In this study, the temperature coefficient of resistance (TCR) of monolayer graphene was controlled by coating polyethylenimine (PEI) on graphene surfaces to enhance its temperature-sensing performances. Monolayer graphene grown by chemical vapor deposition (CVD) was wet-transferred onto a target substrate. To facilitate the interfacial doping by PEI, the hydrophobic graphene surface was altered to be hydrophilic by oxygen plasma treatments while minimizing defect generation. The effect of PEI doping on graphene was confirmed using a back-gated field-effect transistor (FET). The CVD-grown monolayer graphene coated with PEI exhibited an improved TCR of -0.49(±0.03) %/K in a temperature range of 30~50℃.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.6
• /
• pp.403-407
• /
• 2015

Generally, MWCNT, with thermal, chemical and electrical superiority, is manufactured with CVD (chemical vapor deposition). Using MWCNT, it is comonly used as gas sensor of MOS-FET structure. In this study, in order to repeatedly detect gases, the author had to effectively eliminate gases absorbed in a MWCNT sensor. So as to eliminate gases absorbed in a MWCNT sensor, the sensor was applied heat of 423[K], and in order to observe how the applied heat was diffused within the sensor, the author interpreted the diffusion process of heat, using COMSOL interpretation program. In order to interpret the diffusion process of heat, the author progressed modeling with the structure of MWCNT gas sensor in 2-dimension, and defining heat transfer velocity($u={\Delta}T/{\Delta}x$), accorded to governing equation within the sensor, the author proposed heat transfer mechanism.

• Carbon letters
• /
• v.14 no.3
• /
• pp.175-179
• /
• 2013

Isolated single wall carbon nanotubes (SWCNTs) were synthesized by chemical vapor deposition (CVD) using a liquid precursor (xylene) as a carbon source. Transmission electron microscopy (TEM) and atomic force microscopy confirmed the isolated structure of the SWCNTs. Micro-Raman measurements showed a tangential G-band peak ($1590cm^{-1}$) and radial breathing mode (RBM) peaks ($150-240cm^{-1}$). The tube diameters determined from the RBM frequencies are in good agreement with those obtained from TEM. The chirality of the isolated SWCNTs could be determined based on the energy of the laser and their diameter. A further preliminary study on the nitrogen doping of isolated SWCNTs was carried out by the simple use of acetonitrile dissolved in the precusor.

• Tribology and Lubricants
• /
• v.4 no.2
• /
• pp.44-51
• /
• 1988

Titanium carbide(TiC), Titanium nitride(TiN), and Titanium carbonnitride(Ti(C,N)) films were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$, $TiCl_4-N_2-H_2$, and $TiCl_4-CH_4-N_2-H_2$ gas mixtures, respectively. The experimental results indicate that TiC coatings compared with TiN coatings on $Si_3N_4$ -TiC ceramic have an improved microstructural property, good thermal shock resistance, and good interfacial bonding. However TiN coatings compared with TiC coatings have a low friction coefficient with steel and good chemical stability. It is found by cutting test that coated insert compared with $Si_3N_4$-TiC ceramic have a superior flank and crater wear resistance. And multilayer coating compared with monolayer coating shows a improved wear resistance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.399-399
• /
• 2010

Polyethylene glycol(PEG)은 강력한 단백질 및 세포흡착 억제력을 가지고 있어 다양한 생물학적 연구에 사용되고 있으나, 기판과의 결합력이 무척 약해 기판 위에 박막을 형성하기가 매우 어렵다는 문제점이 있다. 이번 연구에서는 capacitively-coupled plasma chemical vapor deposition(CCP-CVD)를 이용하여 PEG를 유리 기판 위에 플라즈마 중합하여 plasma-polymerized PEG(PP-PEG) 기판을 만들었다. PP-PEG 박막은 FT-IR, XPS, ToF-SIMS 분석을 통하여 PEG와 매우 유사한 화학적 조성을 가지고 있음을 확인할 수 있었다. 또한 PP-PEG 기판은 photolithography 방법을 이용하여 표면에 photoresist를 패턴한 뒤 아민작용기를 가지는 plasma-polymerized ethylenediamine (PPEDA)를 증착하여 표면이 amine/PEG로 패턴화된 박막 기판을 만들었다. 패턴된 기판에 단백질 및 세포를 고정화하였을 때, 아민 작용기가 노출된 부분에만 고정화가 나타나고 PP-PEG 영역에는 단백질 및 세포의 흡착이 효율적으로 억제되는 것을 형광측정 및 ToF-SIMS chemical imaging 방법을 이용하여 확인하였다. 이러한 바이오칩 제작기술은 단백질 및 세포 칩을 포함한 여러 분야에서 폭넓게 응용될 수 있을 것으로 기대된다.

• Korean Journal of Materials Research
• /
• v.13 no.1
• /
• pp.1-5
• /
• 2003

Uniform polycrystalline $CoSi_2$layers have been grown in situ on a polycrystalline Si substrate at temperature near $625^{\circ}C$ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η$^{5}$ -C$_{5}$ H$_{5}$ )(CO)$_2$. The growth behavior and thermal stability of $CoSi_2$layer grown on polycrystalline Si substrates were investigated. The plate-like CoSi$_2$was initially formed with either (111), (220) or (311) interface on polycrystalline Si substrate. As deposition time was increasing, a uniform epitaxial $CoSi_2$layer was grown from the discrete $CoSi_2$plate, where the orientation of the$ CoSi_2$layer is same as the orientation of polycrystalline Si grain. The interface between $CoSi_2$layer and polycrystalline Si substrate was always (111) coherent. The growth of the uniform $CoSi_2$layer had a parabolic relationship with the deposition time. Therefore we confirmed that the growth of $CoSi_2$layer was controlled by diffusion of cobalt. The thermal stability of $CoSi_2$layer on small grain-sized polycrystalline Si substrate has been investigated using sheet resistance measurement at temperature from $600^{\circ}C$ to $900^{\circ}C$. The $CoSi_2$layer was degraded at $900^{\circ}C$. Inserting a TiN interlayer between polycrystalline Si and $_CoSi2$layers improved the thermal stability of $CoSi_2$layer up to $900^{\circ}C$ due to the suppression of the Co diffusion.

• Clean Technology
• /
• v.23 no.3
• /
• pp.308-313
• /
• 2017

In this study, we investigated the electrocatalytic effects of the N and O co-doping of Graphite Felt (GF) electrode for the vanadium redox flow battery (VRFB) at the cathode and the anode reaction, respectively. The electrodes were prepared by chemical vapor deposition (CVD) with $NH_3-O_2$ at 773 K, and its effects were compared with an electrode prepared by an O doping treatment. The surface morphology and chemical composition of the electrodes were characterized by scanning electron microscopy (SEM) and photoelectron spectroscopy (XPS). The electrocatalytic properties of these electrodes were characterized in a VRFB single cell comparing the efficiencies and performance of the electrodes at the cathode, anode, and single cell level. The results exhibited about 2% higher voltage and energy efficiencies on the N-O-GF than the O-GF electrode. It was found that the N and O co-doping was particularly effective in the enhancement of the reduction-oxidation reaction at the anode.

• Journal of the Korean Ceramic Society
• /
• v.43 no.8 s.291
• /
• pp.492-497
• /
• 2006

SiC coating has been introduced as protective layer in TRISO nuclear fuel particle of High Temperature Gas cooled Reactor (HTGR) due to excellent mechanical stability at high temperature. In order to inhibit the failure of the TRISO particles, it is important to evaluate the fracture strength of the SiC coating layer. ]n present work, thin silicon carbide coating was fabricated using chemical vapor deposition process with different microstructures and thicknesses. Processing condition and surface status of substrate.affect on the microstructure of SiC coating layer. Sphere indentation method on trilayer configuration was conducted to measure the fracture strength of the SiC film. The fracture strength of SiC film with different microstructure and thickness were characterized by trilayer strength measurement method nanoindentation technique was also used to characterize the elastic modulus and th ε hardness of the SiC film. Relationships between microstructure and mechanical properties of CVD SiC thin film were discussed.