• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.264.1-264.1
• /
• 2013

Graphene is a two-dimensional carbon material whose structure is one-atom-thick planar sheet of sp2-bonded carbon atoms densely packed in a honeycomb crystal lattice. It has drawn significant attention with its distinguished structural and electrical properties. Extremely high mobility and a tunable band gap make graphene potentially useful for innovative approaches to electronics. Although mechanical exfoliation of graphite and decomposition of SiC surfaces upon thermal treatment have been the main method for graphene, they have some limitations in quality and scalability of as-produced graphene films. Solutionphase and solvothermal syntheses of graphene achieved a major improvement for processing, however for device fabrication, a reproducible method such as chemical vapor deposition (CVD) growth yielding high quality films of controlled thickness is required. In this research, we synthesized hexagonal graphene flakes on Cu foils by CVD method and controlled its coverage, density and the size of graphene domains by changing reaction parameters. It is important to control these parameters of graphene growth during synthesis in order to achieve tunable properties and optimized device performance.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.04a
• /
• pp.157-158
• /
• 2007

Tin oxide films were successfully crystallized without additional heating by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD). The degree of crystallization was affected by the ICP power, hydrogen flow and ion bombardment induced by negative substrate bias. The substrate temperature was increased only up to $150^{\sim}180^{\circ}C$ by plasma heating, which suggests that the formation of $SnO_2$ crystalswas caused by enhanced reactivity of precursors in high density plasma. The hardness of deposited tin oxide films ranged from 5.5 to 11GPa at different hydrogen flow rates.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.04a
• /
• pp.76-77
• /
• 2007

화학 기상 증착법 (Chemical Vapor Deposition)은 기체 원료의 화학반응을 이용하여 박막, 미립자, nano-tube등 고체 재료를 합성하는 증착 방법이며, 현재 공업적으로 확산되어 반도체 공정과 같은 박막제조에 이용되고 있다. 박막제조에 있어서 중요한 관심사인 기판의 증착률은 기판의 회전 속도에 의하여 영향 받을 수 있다. 따라서 본 연구에서는 최적의 회전 속도를 찾아내기 위해 박막특성에 직접적으로 연관이 있는 CVD 반응기 내의 유동특성을 유한체적법 (Finite volume method)과 SIMPLE (Semi-Implicit Method for Pressure-Linked Equation) 알고리즘을 사용하여 수치모사 하였고 기판에서 화학 반응을 계산하기 위해 Arrhenius 모델을 사용하였다.

• Carbon letters
• /
• v.25
• /
• pp.68-77
• /
• 2018

Soybean straw (SS)-based activated carbon was employed as a precursor to prepare carbon molecular sieves (CMSs) via chemical vapor deposition (CVD) technique using methane as carbon source. Prior to the CVD process, SS was activated by 0.5 wt% $ZnCl_2$, followed by a carbonization at $500^{\circ}C$ for 1 h in $N_2$ atmosphere. $N_2$ (77 K) adsorption-desorption and $CO_2$ (273 K) adsorption tests were carried out to analyze the pore structure of the prepared CMSs. The results show that increasing the deposition temperature, time or methane flow rate leads the decrease in $N_2$ adsorption capacity, micropore volume and average pore diameter of CMSs. The adsorption selectivity coefficient of $CO_2/CH_4$ achieves as high as 20.8 over CMSs obtained under the methane flow rate of $30mL\;min^{-1}$ at $800^{\circ}C$ for 70 min. The study demonstrates the prepared CMSs are a candidate adsorbent for $CO_2/CH_4$ separation.

• Korean Journal of Materials Research
• /
• v.13 no.12
• /
• pp.779-784
• /
• 2003

Nickel powders were obtained by various preparation methods, and their sintering characteristics were investigated. Nickel powders made by wet chemical process (WCP) had a higher surface area and more narrow size distribution than that of chemical vapor deposition (CVD) method. Nickel-oxide powders by the WCP method were prepared at $200^{\circ}C$ for 3 hr. The oxidation behaviour of nickel-oxide powder is similar with that of the CVD method. Nickel powders made by the WCP method showed a higher shrinkage in the range of $600^{\circ}C$∼$900^{\circ}C$ than that of commercial powder made by the CVD method. The similar results were observed on the surface microstructure of sintered bodies by SEM measurements.

• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.561-564
• /
• 1987

The deposition and reflow properties or BPSG film deposited by APCVD was characterized by variation of each process parameter. As deposition temperature is increased higher, deposition rate is decreased. Maximum deposition rate of BPSG film is obtained in higher 02/Hyride ratio than CVD Oxide or PSG. BPSG film shows stable dielectric properties and we obtained good planarization effect at lower reflow temperature in case of BPSG film than PSG film.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.328-328
• /
• 2011

Wetting phenomena have been heavily studied for industrial and academic researches especially tuning the wettability between hydrophilicity and hydrophobicity. Wicking through the surface texture is shown on superhydrophilic surface while rolling (or dewetting) on the patterns of superhydrophobic surface. These wetting phenomena are known to be affected by surface wettability determined with physical surface patterns as well as chemical composition of surface layer. In this research, we introduce a method to control the wettability of a thin C-SiOx film from hydrophobic to hydrophilic using a mixture gas of HMDSO/$O_2$ by plasma polymerization with rf-CVD (radio frequency-Chemical Vapor Deposition). Wettability was finely controlled by changing the ratio of HMDSO/$O_2$. Hydrophilicity increased as the ratio decreased, while hydrophobicity was enhanced by the ratio. Moreover, fine control from superhydrophilicity to superhydrophobicity was achieved by C-SiOx coating on the Si wafer with prepatterns of submicron-sized pillar array formed by $CF_4$ plasma etching.

• Korean Journal of Materials Research
• /
• v.1 no.1
• /
• pp.9-17
• /
• 1991

TiC coating formed on $Si_3N_4-TiC$ composite ceramic by chemical vapor deposition (CVD) has an improved microstructures, better thermal shock resistance and interfacial bonding than TiN coating does. TiN coating formed by CVD, however, has lower friction coefficients against steels and better chemical stability. The experimental results indicate that the coated insert is superior to the uncoated one in flank and crater wear resistance. And the multilayer coating shows an improved wear resistance than the monolayer coating.

• Applied Chemistry for Engineering
• /
• v.1 no.1
• /
• pp.11-22
• /
• 1990

Chemical vapor deposition of diamond under metastable conditions(low pressure and temperature) developed in the eighties is now an emerging technology for diamond coatings. In this article, various CVD methods are described with their advantages and limitations. The reaction mechanisms and the possible role of H atoms involved in the diamond film growth process are briefly reviewed. Also mentioned are the future research area and the prospect of applications.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.11a
• /
• pp.24.1-24.1
• /
• 2009

Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.