• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.41-47
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• 2020

The effect of Co interlayer on the interfacial reliability of SiN_x/Co/Cu thin film structure for advanced Cu interconnects was systematically evaluated by using a double cantilever beam test. The interfacial adhesion energy of the SiN_x/Cu thin film structure was 0.90 J/㎡. This value of the SiN_x/Co/Cu thin film structure increased to 9.59 J/㎡.Measured interfacial adhesion energy of SiN_x/Co/Cu structure was around 10 times higher than SiN_x/Cu structure due to CoSi₂ reaction layer formation at SiN_x/Co interface, which was confirmed by X-ray photoelectron spectroscopy analysis. The interfacial adhesion energy of SiN_x/Co/Cu structure decreased sharply after post-annealing at 200℃ for 24 h due to Co oxidation at SiN_x/Co interface. Therefore, it is required to control the CoO and Co₃O₄ formation during the environmental storage of the SiN_x/Co/Cu thin film to achieve interfacial reliability for advanced Cu interconnections.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.286-289
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• 2001

Single phase CuGaS$_2$ thin film with the highest diffraction peak of (112) at diffraction angle (2$\theta$) of 28.8$^{\circ}$ was made at substrate temperature of 7$0^{\circ}C$, annealing temperature of 35$0^{\circ}C$ and annealing time of 60 min. And second highest (204) peak was shown at diffraction angle (2$\theta$) of 49.1$^{\circ}$. Lattice constant of a and c of that CuGaS$_2$ thin film was 5.37 $\AA$ and 10.54 $\AA$ respectively. The greatest grain size of the thin film was about 1${\mu}{\textrm}{m}$. The (112) peak of single phase of CuGaS$_2$ thin film at annealing temperature of 35$0^{\circ}C$ with excess S supply was appeared with a little higher about 10 % than that of no exces S supply And the resistivity, mobility and hole density at room temperature of p-type CuGaS$_2$ thin film with best crystalline was 1.4 $\Omega$cm, 15 cm2/V . sec and 2.9$\times$10$^{17}$ cm$^{-3}$ respectively. It was known that carrier concentration had considerable effect than mobility on variety of resistivity of the fabricated CuGaS$_2$ thin film, and the polycrystalline CuGaS$_2$ thin films were made at these conditions were all p-type.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.32-37
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• 2018

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.183-189
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• 2004

Cuprous oxide (Cu$_2$O) thin films are cathodically deposited on Indium Tin Oxide (ITO) substrate. The as-deposited films were heat-treated at 30$0^{\circ}C$ to obtain Cu$_2$O. After the heat treatment, the film was changed from Cu metal into Cu$_2$O phase. The phase, morphology and photocurrent density of the films were dependent on the preparation conditions of deposition time, applied voltage, and the duration of heat treatment. The Cu$_2$O films were characterized by X-Ray Diffractometer (XRD) and Scanning Electron Microscope (SEM). The apparent grain size of the films formed by the normal method was larger than those grown by the pulse method. The CU$_2$O film what was deposited at -0.7 V for 300 sec and then, calcined at 30$0^{\circ}C$ for 1 h showed the predominant photocurrent density of 1048 $\mu$A/$\textrm{cm}^2$. And the stability of Cu$_2$O electrodes were improved with chemically deposited TiO$_2$ thin films on Cu$_2$O.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.256-259
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• 2008

An micro-probe tip must be manufactured using thin film to evaluate integrity of the semiconductor with narrow distance between pads. In this study, fatigue tests were performed for BeCu thin film which is used in micro-probe tip of semiconductor test machine. The thin film was manufactured by electro plating process, and the specimens were fabricated by wire-cut electric discharge method to make hour glass type specimen of $5000{\mu}m$ width, $29200{\mu}m$ length and $30{\mu}m$ thickness. The fatigue test of load control with 10Hz frequency was performed, in ambient environment. The fatigue cycles were tension-tension with mean stress, at stress ratio, R=0.1.

• Journal of the Korean institute of surface engineering
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• v.28 no.4
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• pp.219-224
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• 1995

The peel adhesion and plastic deformation in Cu-Cr alloy films, sputter-deposited onto polyimide films, have been studied as a function of Cr content in the film. The adhesion strength has been measured by T-peel test and the amount of plastic deformation in the peeled metal strip was determined qualitatively by XRD technique. Peel adhesion strength has a maximum in the film containing 22-33wt.% Cr and the peel strength of pure Cr film is lower than the maximum. The film having the highest peel strength is deformed most heavily. The effect of Cr content on the peel strength is discussed in terms of the interfacial bond strength and mechanical properties of Cu-Cr alloy film.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1016-1021
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• 1997

Magneto resistance properties in spin-valve sandwiches with various thickness of nanmagnetic layer in contact with the ferromagnetic NiFe film were investigated. The NiFe layer in contact with the NiO film was pinned by strongly exchange-biased coupling and the free NiFe layer at the film surface induced a sharp change in the magnetoresistance at -5~15Oe due to small coercivity. The NiO/NiFe/Cu/NiFe film showed a magnetoresistance ratio in the range of 2.3~2.9% and a field sensitivity above 2.2%/Oe with various of nonmagnetic layer. The NiO/NiFe/Cu/NiFe film of the field sensitivity above 2.2%/Oe suggests stang possibility of magnetic sensor matter.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.575-579
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• 2016

The metal mesh films with thickness of 1.0, 1.5, $2.0{\mu}m$ were prepared by photolithography using Ag, Al, and Cu metals. Every metal films were showed C(111) preferred orientation and Ag showed the lowest resistivity and followed by Al and Cu. The transmittance of almost films were higher than 90%. But, the Ag film with thickness of $2.0{\mu}m$ was delaminated during photolithography process due to low adhesion. So, Cu and Ti metal films were introduced under Ag film to improve adhesion property. The Cu film showed higher adhesion properties compared to Ti film. Furthermore, the Ti films that deposited on Ag film showed higher acid resistance.

• Journal of the Korean Electrochemical Society
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• v.20 no.1
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• pp.1-6
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• 2017

This study investigated the effect of surface pretreatment, which removes native Cu oxides on Cu seed layer, on subsequent Cu electro-/electroless deposition in Cu interconnection. The native Cu oxides were removed by using citric acid-based solution frequently used in Cu chemical mechanical polishing process and the selective Cu oxide removal was successfully achieved by controlling the solution composition. The characterization of electro-/electrolessly deposited Cu films after the oxide removal was then performed in terms of film resistivity, surface roughness, etc. It was observed that the lowest film resistivity and surface roughness were obtained from the substrate whose native Cu oxides were selectively removed.