• Composites Research
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• 제22권3호
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• pp.9-17
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• 2009

본 논문에서는 분자동력학 방법을 이용하여 Ag 필름/Cu기판에 대한 나노인덴테이션 특성을 파악하였다. 필름의 강성과 경도는 필름의 두께에 관계되어있으며, 임계범위 내에서, 그래인 크기가 증기하면 강성과 경도도 증가하는 것을 확인하였다. 5nm 두께 이하의 Ag필름/Cu기판의 강성과 경도는 벌크 Ag의 경우에 비해 낮은 값을 나타내었다. 특히 4nm 두께 이하의 Ag필름/Cu기판의 인덴테이션에 있어서, 전위 집적과 불일치 전위사이의 상호작용에 의해 계면상에서 꽃모양의 전위 루프가 발생 하였다. 이는 인덴테이션 하중과 변위 커브에서 하중이 저하되는 것과 관계있는 것으로 사료되고 있다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.83-84
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• 2009

Thin film solar cells based on CIGS continue to be a leading candidate for thin film photovoltaic devices due to their appropriate bandgap, long-term stability, and low-cost production. To date, the most successful technique for the deposition of a CIGS absorber layer has been based on the co-evaporation However, the evaporation process is difficult to scale-up for large-area manufacturing the sputtering and Selenizaton process has been a promising method for low-cost and large-scale production of high quality CIGS In this study, we have used Cu and CuIn alloy targets for precursor deposition the precursor deposited by sputtering Cu and CuIn targets and $CuInSe_2$ thin film is manufactured by Selenization process

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.527-531
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• 2016

In this study, p-type thin film transistors consisting of CuO channels were fabricated by sol-gel process, with copper (II) acetate monohydrate precursors. At $500^{\circ}C$, the deposited films were fully converted into monoclinic phase CuO. The fabricated CuO thin film transistors deliver field effect mobility in saturation regime of $0.015cm^2/Vs$, and $I_{on}/I_{off}$ of ${\sim}10^3$. The degradation of the performance of the fabricated CuO thin film transistor caused by the exposure to air has been studied.

• Nuclear Engineering and Technology
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• 제55권11호
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• pp.4032-4038
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• 2023

Cu, which exhibits excellent corrosion resistance in underground environments, has been investigated as a canister material for use in the deep geological disposal of spent nuclear fuels. In this study, the technical viability of atmospheric plasma spraying for producing Cu-coated canisters was investigated. A high-purity Cu film (millimeter scale) was deposited onto a stainless-steel substrate using a plasma gun with a shroud structure. Potentiodynamic polarization studies revealed that the Cu film exhibited a sufficiently low corrosion rate in the groundwater electrolyte. In addition, no pitting corrosion was observed on the Cu film surface after accelerated corrosion studies. A prototype cylindrical Cu film was fabricated on a 1/20 scale on a stainless-steel tube to demonstrate the scalability of atmospheric plasma spraying in producing Cu-coated canisters.

• Corrosion Science and Technology
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• 제6권4호
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• pp.198-205
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• 2007

The initial stages of electrochemical oxidative CuI film formation on Cu(111), as studied by means of Cyclic Voltammetry (CV), in-situ Scanning Tunneling Microscopy (STM) and ex-situ Synchrotron X-ray Photoemission Spectroscopy (SXPS), indicate a significant acceleration of copper oxidation in the presence of iodide anions in the electrolyte. A surface confined supersaturation with mobile CuI monomers first leads to the formation of a 2D-CuI film via nucleation and growth of a Cu/I-bilayer on-top of a pre-adsorbed iodide monolayer. Structurally, this 2D-CuI film is closely related to the (111) plane of crystalline CuI (zinc blende type). Interestingly, this film causes no significant passivation of the copper surface. In an advanced stage of copper dissolution a transition from the 2D- to a 3D-CuI growth mode can be observed.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.270-273
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• 2007

In this report, Indium-free and Indium-reduced thin film materials for solar absorber were studied in order to search alternative materials for thin film solar cell. The films of $Cu_2ZnSnSe_4$ and $Cu_2ZnSnSe_2$ were deposited using mixed binary chalcogenides powders. From the film bulk analysis result, it is observed that Cu concentration is a function of substrate temperature as well as CuSe mole ratio in the target. Under optimized conditions, $Cu_2ZnSnSe_4$ and $Cu_2ZnSnSe_2$ thin films grow with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of $10^4$ $cm^{-1}$. $Cu_2ZnSnSe_4$ film shows a 1.5 eV band gap. On the other side, an increasing of optical band gap from 1.0 eV to 1.25 eV ($CuInSnSe_2$) is found to be proportional with an increasing of Zn concentration. All films have a p-type semiconductor characteristic with a carrier concentration in the order of $10^{14}$ $cm^{-3}$, a mobility about $10^1$ $cm^{2{\cdot}-1.}S^{-1}$ and a resistivity at the range of $10^2-10^6$ ${\Omega}{\cdot}m$.

• 센서학회지
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• 제6권5호
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• pp.407-413
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• 1997

기판온도 $300^{\circ}C$에서 열증착법에 의해 p형 <100> Si 기판위에 CuPc(Copper Phthalocyanine) 결정 박막을 증착하였다. X선 회절분석으로부터 CuPc 박막은 a-축 방향으로 성장하였음을 알 수 있었다. CuPc분자들이 기판면위에 수직인 CuPc/Si박막의 광전특성을 조사하기 위하여 수직방향의 전류-전압 (I-V) 특성을 기판 Si의 특성과 비교 관찰하였다. 저항성 접촉을 위해 기판인 p형 Si위에 전극으로 Au를 증착시켰다. Au/Si 접합에 빛을 조사한 결과 전류는 증가하지만 광기전력효과는 관찰되지 않았다. p형 반도체인 CuPc 박막과 기판 p-Si의 접합은 장벽을 형성하지 않기 때문에 빛을 조사하지 않았을 때의 I-V 특성은 저항성을 나타낸다. 빛을 조사하였을 때 CuPc/Si 접합의 증가된 광전류는 Si 웨이퍼보다 현저하게 큰 것을 알 수 있다. 따라서 CuPc 층이 600 nm 파장에서의 붉은 빛을 현저하게 흡수하여 광전류에 기여하는 다량의 광캐리어를 형성함을 알 수 있다. CuPc/Si 박막은 $J_{sc}$ (short-circuit photocurrent) $4.29\;mA/cm^{2}$와 $V_{oc}$ (open circuit photovoltage) 12 mV의 광기전력 특성을 보여준다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.293.1-293.1
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• 2016

Various materials including conductive, dielectric, and semi-conductive materials, constitute suitable candidates for printed electronics. Metal nanoparticles (e.g. Ag, Cu, Ni, Au) are typically used in conductive ink. However, easily oxidized metals, such as Cu, must be processed at low temperatures and as such, photonic sintering has gained significant attention as a new low-temperature processing method. This method is based on the principle of selective heating of a strongly absorbent film, without light-source-induced damage to the transparent substrate. However, Cu nanoparticles used in inks are susceptible to the growth of a native copper-oxide layer on their surface. Copper-oxide-nanoparticle ink subjected to a reduction mechanism has therefore been introduced in an attempt to achieve long-term stability and reliability. In this work, a flash-light sintering process was used for the reduction of an inkjet-printed Cu(II)O thin film to a Cu film. Using a photographic lighting instrument, the intensity of the light (or intense pulse light) was controlled by the charged power (Ws). The resulting changes in the structure, as well as the optical and electrical properties of the light-irradiated Cu(II)O films, were investigated. A Cu thin film was obtained from Cu(II)O via photo-thermal reduction at 2500 Ws. More importantly, at one shot of 3000 Ws, a low sheet resistance value ($0.2527{\Omega}/sq.$) and a high resistivity (${\sim}5.05-6.32{\times}10^{-8}{\Omega}m$), which was ~3.0-3.8 times that of bulk Cu was achieved for the ~200-250-nm-thick film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.379-380
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• 2005

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2\Theta$) of $27.7^{\circ}$ was well made by SEL method at annealing temperature of $250^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when $CuInS_2$ composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}m$ respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.