• 한국표면공학회지
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• 제26권3호
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• pp.149-157
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• 1993

In the study of TAB(Tape Automated Bonding)technologies, Cu-Cr sputtered seed layer has been used to improve the adhesion between Polyimide and Cu film and electrical properties. But the Cu electrodeposit on Cu-Cr film had poor adhesion or powder-like form due to the surface Cr oxides on the Cu-Cr film. By means of activating the Cu-Cr film with the oxalic acid and phosphoric acid, the Cu film with the improved adhesion could be coated on the Cu-Cr sputtered film in CuSO4 solution. The etching rate was compared with increasing the Cr content of the sputtered Cu-Cr film, and anodic polarization curve in FeCl3 solution was investigated. With increasing the Cr content, the etching rate was reduced. The clean etching cross section could be obtained with increasing the concentration of FeCl3 solution. But above the 13 w/o Cr content, Cu-Cr sputtered film could not bed etched cleanly only with FeCl3 solution and additives were needed.

• 한국재료학회지
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• 제21권10호
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• pp.550-555
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• 2011

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used $Cu_2In_3$, CuGa and $Cu_2Se$ sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of $Cu_2In_3$, CuGa and $Cu_2Se$ showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and $Cu_2Se$ phases. After selenization at $550^{\circ}C$ for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin $Cu_2Se$ layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• Composites Research
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• 제37권3호
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• pp.170-178
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• 2024

본 연구에서는 탄소섬유 강화 플라스틱(CFRP)에 얇은 구리 필름(Cu film)이 배치된 hybrid composite이 제안되었으며, 두께방향 열전도도가 최대가 될 수 있는 Cu film 배치조합을 도출하는데 양자 어닐링(Quantum Annealing)이 적용되었다. CFRP의 각 ply와 Cu film간의 상관관계 분석이 유한요소 해석을 통해 수행되었으며, 수행된 결과를 바탕으로 조합 최적화 문제가 정의되었다. 정의된 문제를 양자 어닐링에 임베딩하기 위한 공식화 과정이 진행되었으며 이를 통해 CFRP의 각 ply에 투입될 수 있는 Cu film 수량에 관한 목적함수와 제약조건이 수식으로 구현되었다. 공식화된 수식은 D-Wave 양자 어닐러에 임베딩되기 위해 Ocean SDK(software development kit)와 Leap을 통해 프로그래밍 되었으며, 양자 어닐링 과정을 통해 두께 방향 열전도도가 최대를 만족하는 최적의 Cu film 배치 조합이 도출되었다. 도출된 배치 조합은 투입될 수 있는 Cu film의 수량이 적어질수록 단순한 배치 형태를 나타내었으며, 수량이 많아질수록 세밀한 배치를 보였다. Cu film의 배치 수량에 따라 생성된 최적 조합들은 두께 방향으로의 고유 열전도 경로를 나타내었으며, Cu film의 횡방향 배치 자유도가 두께 방향 열전도도 결과에 민감하게 나타날 수 있음을 보였다.

• 한국의류학회지
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• 제27권7호
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• pp.843-850
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• 2003

Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless plated Cu layer and polyester (PET) film, the effect of pretreatment conditions such as etching method, mixed catalyst composition were investigated. Chemical etching and plasma treatment increased surface roughness in decreasing order of Ar＞HCl＞O$_2$＞NH$_3$. However, adhesion of Cu layer on PET film increased in the following order: $O_2$＜Ar＜HCl＜NH$_3$. It indicated that appropriate surface roughness and introduction of affinitive functional group with Pd were key factors of improving adhesion of Cu layer. PET film was more finely etched by HCI tolution, resulting in an improvement in adhesion between Cu layer and PET film. Plasma treatment with NH$_3$produced nitrogen atoms on PET film, which enhances chemisorption of Pd$^{2+}$ on PET film, resulting in improved adhesion and shielding effectiveness of Cu layer deposited on the Pd catalyzed surface. Surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$; SnCl$_2$from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, adhesion and shielding effectiveness of Cu plated PET film were increased.d.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.144-147
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• 2003

Cu+ ions drift diffusion in formal oxide film and SiOCH film for interlayer dielectric is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 0.2MV/cm and temperature $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$ for 10min, 30min, 60min. The Cu+ ions drift rate of $SiOCH(k=2.85{\pm}0.03)$ film is considerable lower than termal oxide. As a result of the experiment, SiOCH film is higher than Thermal oxide film for Cu+ drift diffusion resistance. The important conclusion is that SiOCH film will solve a causing reliability problems aganist Cu+ drift diffuion in dielectric materials.

• 공업화학
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• 제35권1호
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• pp.61-65
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• 2024

대면적 유기 발광 다이오드, 유기 태양 전지, 박막 트렌지스터의 정공 주입층으로써 CuSCN의 효과가 많이 입증되었다. 따라서 본 연구에서는 용액 공정 조건에 따라 CuSCN의 표면과 광학적, 전기적 분석을 하여 최적화된 필름의 조건을 제시하였다. 다양한 CuSCN 용액의 농도를 제작하여 필름 표면 특성을 확인하였고, 필름의 표면이 소자의 전기적 성능에 영향을 미치는지 확인하였다. CuSCN의 용액의 농도가 낮을 때는 CuSCN의 필름이 형성되지 않고 island 형태로 코팅되었고, 용액의 농도가 증가할수록 CuSCN의 필름이 균일하게 형성하였고 이는 소자의 전도도 향상에 기여하였다. 또한 hole only device를 제작하여 CuSCN의 정공 수송 층으로써의 역할을 입증하였다.

• 한국표면공학회지
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• 제29권3호
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• pp.157-162
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• 1996

The effects of microstructural change on the adhesion strength between Cu/Cr film and polyimide have been studied. Cr films (50 nm thick) and Cu films (500 or 1000 nm thick) were deposited on polyimide by DC magnetron sputtering. During Cu deposition the Ar pressure was 5 or 100 mtorr. The microstructure was observed by SEM and the adhesion was measured by T-peel test. Plastic deformation of peeled metal strips was characterized quantitatively by using XRD technique. The film in which Cu is deposited at 100 mtorr has higher adhesion strength than the film in which Cu is deposited at 5 mtorr. And in the film with same deposition pressure of 100 mtorr, the adhesion strength is increased as the deposited thickness increases from 500 to 1000 nm. The adhesion change of Cu/Cr can be interpreted as the difference in plastic deformation.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.435-443
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• 2001

As power durable RF SAW filters, AL-(0∼2wt%)Cu alloy multi-layered thin electrodes were deposited on 42° LiTaO$_3$ piezoelectric substrates by magnetron sputtering process, and then ladder-type RF SAW filters, satisfying the electrical specification of CDMA transmission band, were fabricated through optimizing SAW resonator structures. The temperature of film electrodes in SAW filter was increased with RF power, and reached the maxima to cause a failure of SAW filters at the cut-off frequencies of the RF filter band. As RF power increases, the electrodes of Al-Cu alloy showed higher power durability than that of pure Al. The multi-layer laminated film of Al-1wt.% Cu/Cu/Al-1wt%Cu resulted in the best power durability up to 4W of RF power. Every film electrode, however, was destroyed within seconds whenever applying a critical RF power to SAW filters, regardless of the composition and structure of film electrodes. The breakdown of film electrodes under FR power seems to believe due to the fatigue of electrodes caused by repetitive cyclic stress of surface acoustic wave, which is amplified as RF power increases.

• 한국표면공학회지
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• 제55권2호
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• pp.63-69
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• 2022

Preparing various types of thin films of oxide semiconductors is a promising approach to fabricate efficient photoanodes and photocathodes for hydrogen production via photoelectrochemical (PEC) water splitting. In this work, we investigate the feasibility of an efficient photocathode for PEC water reduction of a p-type oxide semiconductor cupric oxide (CuO) thin film prepared via a facile method combined with sputtering Cu metallic film on fluorine-doped thin oxide (FTO) coated glass substrate and subsequent thermal oxidation of the sputtered Cu metallic film in dry air. Characterization of the structural, optical, and PEC properties of the CuO thin film prepared at various Cu sputtering powers reveals that we can obtain an optimum CuO thin film as an efficient PEC photocathode at a Cu sputtering power of 60 W. The photocurrent density and the optimal photocurrent conversion efficiency for the optimum CuO thin film photocathode are found to be -0.3 mA/cm² and 0.09% at 0.35 V vs. RHE, respectively. These results provide a promising route to fabricating earth-abundant copper-oxide-based photoelectrode for sunlight-driven hydrogen generation using a facile method.