• Journal of the Korean institute of surface engineering
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• v.26 no.3
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• pp.149-157
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• 1993

In the study of TAB(Tape Automated Bonding)technologies, Cu-Cr sputtered seed layer has been used to improve the adhesion between Polyimide and Cu film and electrical properties. But the Cu electrodeposit on Cu-Cr film had poor adhesion or powder-like form due to the surface Cr oxides on the Cu-Cr film. By means of activating the Cu-Cr film with the oxalic acid and phosphoric acid, the Cu film with the improved adhesion could be coated on the Cu-Cr sputtered film in CuSO4 solution. The etching rate was compared with increasing the Cr content of the sputtered Cu-Cr film, and anodic polarization curve in FeCl3 solution was investigated. With increasing the Cr content, the etching rate was reduced. The clean etching cross section could be obtained with increasing the concentration of FeCl3 solution. But above the 13 w/o Cr content, Cu-Cr sputtered film could not bed etched cleanly only with FeCl3 solution and additives were needed.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.550-555
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• 2011

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used $Cu_2In_3$, CuGa and $Cu_2Se$ sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of $Cu_2In_3$, CuGa and $Cu_2Se$ showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and $Cu_2Se$ phases. After selenization at $550^{\circ}C$ for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin $Cu_2Se$ layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• Composites Research
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• v.37 no.3
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• pp.170-178
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• 2024

This study proposes a hybrid composite where a thin copper film (Cu film) is embedded in carbon fiber reinforced plastic (CFRP), and quantum annealing is applied to derive the combination of Cu film placement that maximizes the through-thickness thermal conductivity. The correlation between each ply of CFRP and the Cu film is analyzed through finite element analysis, and based on the results, a combination optimization problem is formulated. A formalization process is conducted to embed the defined problem into quantum annealing, resulting in the formulation of objective functions and constraints regarding the quantity of Cu films that can be inserted into each ply of CFRP. The formulated equations are programmed using Ocean SDK (Software Development Kit) and Leap to be embedded into D-Wave quantum annealer. Through the quantum annealing process, the optimal arrangement of Cu films that satisfies the maximum through-thickness thermal conductivity is determined. The resulting arrangements exhibit simpler patterns as the quantity of insertable Cu films decreases, while more intricate arrangements are observed as the quantity increases. The optimal combinations generated according to the quantity of Cu film placement illustrate the inherent thermal conductivity pathways in the thickness direction, indicating that the transverse placement freedom of the Cu film can significantly affect the results of through-thickness thermal conductivity.

• Journal of the Korean Society of Clothing and Textiles
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• v.27 no.7
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• pp.843-850
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• 2003

Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless plated Cu layer and polyester (PET) film, the effect of pretreatment conditions such as etching method, mixed catalyst composition were investigated. Chemical etching and plasma treatment increased surface roughness in decreasing order of Ar＞HCl＞O$_2$＞NH$_3$. However, adhesion of Cu layer on PET film increased in the following order: $O_2$＜Ar＜HCl＜NH$_3$. It indicated that appropriate surface roughness and introduction of affinitive functional group with Pd were key factors of improving adhesion of Cu layer. PET film was more finely etched by HCI tolution, resulting in an improvement in adhesion between Cu layer and PET film. Plasma treatment with NH$_3$produced nitrogen atoms on PET film, which enhances chemisorption of Pd$^{2+}$ on PET film, resulting in improved adhesion and shielding effectiveness of Cu layer deposited on the Pd catalyzed surface. Surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$; SnCl$_2$from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, adhesion and shielding effectiveness of Cu plated PET film were increased.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.144-147
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• 2003

Cu+ ions drift diffusion in formal oxide film and SiOCH film for interlayer dielectric is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 0.2MV/cm and temperature $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$ for 10min, 30min, 60min. The Cu+ ions drift rate of $SiOCH(k=2.85{\pm}0.03)$ film is considerable lower than termal oxide. As a result of the experiment, SiOCH film is higher than Thermal oxide film for Cu+ drift diffusion resistance. The important conclusion is that SiOCH film will solve a causing reliability problems aganist Cu+ drift diffuion in dielectric materials.

• Applied Chemistry for Engineering
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• v.35 no.1
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• pp.61-65
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• 2024

The effectiveness of CuSCN as a hole injection layer in large-area organic light-emitting diodes, organic solar cells, and thin-film transistors has been well demonstrated. Therefore, in this study, the surface, optical, and electrical analyses of CuSCN were carried out according to the solution process conditions in order to propose optimized film conditions. Various CuSCN solution concentrations were prepared to determine the film surface characteristics and to determine whether the film surface affects the electrical performance of the device. When the CuSCN solution concentration was low, the CuSCN film was not formed and coated in the form of islands, and when the solution concentration was increased, the CuSCN film was formed uniformly, which contributed to improving the conductivity of the device. In addition, a hole-only device was fabricated to demonstrate the role of CuSCN as a hole transport layer.

• Journal of the Korean institute of surface engineering
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• v.29 no.3
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• pp.157-162
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• 1996

The effects of microstructural change on the adhesion strength between Cu/Cr film and polyimide have been studied. Cr films (50 nm thick) and Cu films (500 or 1000 nm thick) were deposited on polyimide by DC magnetron sputtering. During Cu deposition the Ar pressure was 5 or 100 mtorr. The microstructure was observed by SEM and the adhesion was measured by T-peel test. Plastic deformation of peeled metal strips was characterized quantitatively by using XRD technique. The film in which Cu is deposited at 100 mtorr has higher adhesion strength than the film in which Cu is deposited at 5 mtorr. And in the film with same deposition pressure of 100 mtorr, the adhesion strength is increased as the deposited thickness increases from 500 to 1000 nm. The adhesion change of Cu/Cr can be interpreted as the difference in plastic deformation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.435-443
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• 2001

As power durable RF SAW filters, AL-(0∼2wt%)Cu alloy multi-layered thin electrodes were deposited on 42° LiTaO$_3$ piezoelectric substrates by magnetron sputtering process, and then ladder-type RF SAW filters, satisfying the electrical specification of CDMA transmission band, were fabricated through optimizing SAW resonator structures. The temperature of film electrodes in SAW filter was increased with RF power, and reached the maxima to cause a failure of SAW filters at the cut-off frequencies of the RF filter band. As RF power increases, the electrodes of Al-Cu alloy showed higher power durability than that of pure Al. The multi-layer laminated film of Al-1wt.% Cu/Cu/Al-1wt%Cu resulted in the best power durability up to 4W of RF power. Every film electrode, however, was destroyed within seconds whenever applying a critical RF power to SAW filters, regardless of the composition and structure of film electrodes. The breakdown of film electrodes under FR power seems to believe due to the fatigue of electrodes caused by repetitive cyclic stress of surface acoustic wave, which is amplified as RF power increases.

• Journal of the Korean institute of surface engineering
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• v.55 no.2
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• pp.63-69
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• 2022

Preparing various types of thin films of oxide semiconductors is a promising approach to fabricate efficient photoanodes and photocathodes for hydrogen production via photoelectrochemical (PEC) water splitting. In this work, we investigate the feasibility of an efficient photocathode for PEC water reduction of a p-type oxide semiconductor cupric oxide (CuO) thin film prepared via a facile method combined with sputtering Cu metallic film on fluorine-doped thin oxide (FTO) coated glass substrate and subsequent thermal oxidation of the sputtered Cu metallic film in dry air. Characterization of the structural, optical, and PEC properties of the CuO thin film prepared at various Cu sputtering powers reveals that we can obtain an optimum CuO thin film as an efficient PEC photocathode at a Cu sputtering power of 60 W. The photocurrent density and the optimal photocurrent conversion efficiency for the optimum CuO thin film photocathode are found to be -0.3 mA/cm² and 0.09% at 0.35 V vs. RHE, respectively. These results provide a promising route to fabricating earth-abundant copper-oxide-based photoelectrode for sunlight-driven hydrogen generation using a facile method.