• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.525-526
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• 2007

Over-polishing is required to completely remove the material of top surface across whole wafer, in spite of a local dishing problem. This paper introduces the two-step CMP process using protective layer and high selectivity slurry, to reduce dishing amount and variation. The 30nm thick protective oxide layer was deposited on the pattern, and then polished with low selectivity slurry to partially remove the projected area while suppressing the removal rate of the recessed area. After the first step CMP process, high selectivity slurry was used to minimize the dishing amount and variation in pattern structure. Experimental result shows that two-step CMP process can be successfully applicable to reduce the dishing defect generated in over-polishing.

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.53-53
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.11a
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• pp.19.2-19.2
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• 2006

• Tribology and Lubricants
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• v.39 no.2
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• pp.72-75
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• 2023

Silicon carbide (SiC) is used as a substrate material for power semiconductors; however, SiC chemical mechanical polishing (CMP) requires considerable time owing to its chemical stability and high hardness. Therefore, researchers are attempting to increase the material removal rate (MRR) of SiC CMP using various methods. Mixed-abrasive CMP (MAS CMP) is one method of increasing the material removal efficiency of CMP by mixing two or more particles. The aim of this research is to study the mathematical modeling of the MRR of MAS CMP of SiC with SiO₂ and TiO₂ particles. With a total particle concentration of 32 wt, using 80-nm SiO₂ particles and 25-nm TiO₂ particles maximizes the MRR at 8 wt of the TiO₂ particle concentration. In the case of 5 nm TiO₂ particles, the MRR tends to increase with an increase in TiO₂ concentration. In the case of particle size 10-25 nm TiO₂, as the particle concentration increases, the MRR increases to a certain level and then decreases again. TiO₂ particles of 25 nm or more continuously decreased MRR as the particle concentration increased. In the model proposed in this study, the MRR of MAS CMP of SiC increases linearly with changes in pressure and relative speed, which shows the same result as the Preston's equation. These results can contribute to the future design of MAS; however, the model needs to be verified and improved in future experiments.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.47-51
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• 2006

Recently, CMP (Chemical Mechanical Polishing) is one of very important processing in semiconductor technology because of large integration and application of design role. CMP is a planarization process of wafer surface using the chemical and mechanical reactions. One of the most important components of the CMP system is the polishing pad. During the CMP process, the pad itself becomes smoother and glazing. Therefore it is necessary to have a pad conditioning process to refresh the pad surface, to remove slurry debris and to supply the fresh slurry on the surface. A conditioning disk is used during the pad conditioning. There are diamonds on the surface of diamond disk to remove slurry debris and to polish pad surface slightly, so density, shape and size of diamond are very important factors. In this study, we characterized diamond disk with 9 kinds of sample.

• Ceramist
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• v.20 no.4
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• pp.30-35
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• 2017

• Analytical Science and Technology
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• v.19 no.5
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• pp.394-399
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• 2006

The polishing performance and the relationships of electrochemistry depending upon oxidizers and additives in the tungsten CMP slurry used in semiconductor industry were investigated. Hydrogen peroxide, ferric nitrate and potassium iodate were used as oxidizers and they showed different oxidation reactions on tungsten film depending on the kind of oxidizers and pH of slurry. The differences influenced the polishing performance. Etching reaction was predominated in the hydrogen peroxide. However, passivation reaction was prevailed in ferric nitrate and potassium iodate. TMAH and KOH raised the potential energy and removal rate of tungsten, and improved a dispersion characteristic of slurry by increasing absolute value of zeta potential. Addition of 100 ppm of poly(acrylic acid) of M.W. 250,000 improved dispersion ability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.605-609
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• 2005

Chemical mechanical polishing (CMP) of Ni was performed by the various ratios of four kinds of oxidizers and an addition of alumina powders as an abrasive in each slurry with the different oxidizers. Moreover, the interaction between the Ni and the each oxidizer was discussed by potentiodynamic polarization measurement, in order to compare the effects of Ni-CMP and electrochemical characteristics on the Ni with the different oxidizers. As an experimental result, the removal rate of Ni reached a maximum at 1 $vol\%$ of $H_2O_2$. Also the removal rates of Ni increased with the audition of alumina abrasives in each slurry. The potentiodynamic polarization of Ni under dynamic condition showed a significant difference in electrochemical behavior by addition of $H_2O_2$ in solutions. Ni showed the perfect passivation behavior in solution without $H_2O_2$ under potentiodynamic polarization condition, while active dissolution dominates in solution with the addition of $H_2O_2$. The results indicate that the surface chemistry and electrochemical characteristics of Ni play an important role in controlling the polishing behavior of Ni.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1296-1299
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• 2004

MIM capacitor has been investigated for the next generation DRAM. Conventional poly-Si bottom electrode cannot satisfy the requirement of electrical properties and comparability to the high k materials. New bottom electrode material such as ruthenium has been suggested in the fabrication of MIM structure capacitor. However, the ruthenium has to be planarized due to the backend scalability. For the planarization CMP has been widely used in the manufacture of integrated circuit. In this research, ruthenium thin film was Polished by CMP with cerium ammonium nitrate (CAN)base slurry. HNO3 was added on the CAN solution as an additive. In the various concentration of chemical and alumina abrasive, ruthenium surface was etched and polished. After static etching and polishing, etching and removal rate was investigated. Also microroughness of surface was observed by AFM. The etching and removal rate depended on the concentration of CAN, and HNO3 accelerated the etching and polishing of ruthenium. The reasonable removal rate and microroughness of surface was achieved in the 1wt% alumina slurry.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.7 s.238
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• pp.983-989
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• 2005

The effects of mechanical parameters on the characteristics of chemical mechanical polishing(CMP) can be directly evaluated by friction force. The piezoelectric quartz sensor for friction force measurement was installed, and friction force could be detected during CMP process. Furthermore, friction energy can be calculated by multiplying relative velocity by integration of the friction force throughout the polishing time. $SiO_2$ slurry for interlayer dielectric(ILD) CMP was used in this experiment to consider the relation of frictional characteristics and polishing results. From this experiment, it is proven that the friction energy is an essential factor of removal rate. Also, the friction force is related to removal amount per unit length(dH/ds) and friction energy has corelation to the removal rate(dH/dt) and process temporature. Moreover, within wafer non-unifornity(WIWNU) is related to coefficient of friction because of the mechanical moment equilibrium. Therefore, the prediction of polishing result would be possible by measuring friction force.