• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.481-482
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• 2006

Chemical-mechanical polishing, the dominant technology for LSI planarization, is trending to play an important function in micro-electro mechanical systems (MEMS). However, MEMS CMP process has a couple of different characteristics in comparison to LSI device CMP since the feature size of MEMS is bigger than that of LSI devices. Preliminary CMP tests are performed to understand material removal rate (MRR) with blanket wafer under a couple of polishing pressure and velocity. Based on the blanket CMP data, this paper focuses on the consumable approach to enhance MEMS CMP by the adjustment of slurry and pad. As a mechanical tool, newly developed microstructured (MS) pad is applied to compare with conventional pad (IC 1400-k Nitta-Haas), which is fabricated by micro melding method of polyurethane. To understand the CMP characteristics in real time, in-situ friction force monitoring system was used. Finally, the topography change of poly-si MEMS structures is compared according to the pattern density, size and shape as polishing time goes on.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.653-654
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• 2005

Stick-slip friction is one of the material removal mechanisms in tribology. This stick-slip friction occurs when the static friction force is larger than the dynamic friction force, and make the friction curve fluctuated. In the friction force monitoring system for chemical mechanical polishing(CMP), the friction force also vibrates just as stick-slip friction. It seems that the stick-slip friction causes scratches on the surface of moving parts. In this paper, A study on the scratches which occur during copper CMP was conducted in a view of stick-slip friction.

• 지구물리와물리탐사
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• 제8권1호
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• pp.59-66
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• 2005

이 논문의 주 목적은 효율이 높은 공통중간점(CMP) 자료 획득 방법에 대해 서술함으로써, GPR탐사의 적용성을 넓히기 위함이다. CMP 자료 획득의 효율을 높이기 위한 가장 중요한 기술적 혁신은 실시간 이동 GPS(RTK-CPS)를 이용한 GPR 안테나의 위치 연속 모니터링이다. 이 연구에서 제안한 자동 안테나 이동 시스템은 GPR 탐사에서 시간을 가장 많이 요구하는 특정 지점에 안테나를 위치시키는 과정이 필요없기 때문에 탐사 시간 효율이 개선된다. 수치적 실험으로부터 자료획득 효율이 향상됨에 따라 자료의 밀도 및 CMP 중합수가 늘어나는 것을 예측할 수 있었으며, 이는 결과적인 자료의 신호대 잡음비 향상을 초래한다. 현장 적용은 이러한 가설을 입증하였으며, 이 연구에서 제안된 방법을 CMP 방식의 GPR 탐사를 좀 더 실질적이고 널리 사용될 수 있게 한다. 게다가 이 방법은 정밀한 지하수 정보를 제공할 수도 있는데, 이는 CMP 방식으로 얻은 공간적으로 조밀한 유전상수 분포를 물포화도와 갈이 지하수 특성과 관계 깊은 조밀한 물리량 분포로 변환할 수 있기 때문이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.358-359
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• 2005

Chemical mechanical polishing(CMP) process depends on a variety of variables. Especially, surface roughness of pad plays a key role in material removal in CMP in terms of transportation ability of pores and real contact area. The surface roughness is deteriorated with polishing time by applied pressure and relative velocity. In this reason, diamond conditioner has been used to maintain the roughness on the pad. The authors try to investigate the correlation between pad roughness and frictional behavior by comparing ex-situ conditioning with in-situ conditioning.

• Tribology and Lubricants
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• 제32권2호
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• pp.56-60
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• 2016

Sapphire has a high hardness and strength and chemical stability as a superior material. It is used mainly as a material for a semiconductor as well as LED. Recently, the cover glass industry used by a sapphire is getting a lot of attention. The sapphire substrate is manufactured through ingot sawing, lapping, diamond mechanical polishing (DMP) and chemical mechanical polishing (CMP) process. DMP is an important process to ensure the surface quality of several nm for CMP process as well as to determine the final form accuracy of the substrate. In DMP process, the material removal is achieved by using the mechanical energy of the relative motion to each other in the state that the diamond slurry is disposed between the sapphire substrate and the polishing platen. The polishing platen is one of the most important factors that determine the material removal characteristics in DMP. Especially, it is known that the geometric characteristics of the polishing platen affects the material removal amount and its distribution. This paper investigated the material removal characteristics and the effects of the polishing platen groove in sapphire DMP. The experiments were preliminarily carried out to evaluate the sapphire material removal characteristics according to process parameters such as pressure, relative velocity and so on. In the experiment, the monitoring apparatus was applied to analyze process phenomena in accordance with the processing conditions. From the experimental results, the correlation was analyzed among process parameters, polishing phenomena and the material removal characteristics. The material removal equation based on phenomenological factors could be derived. And the experiment was followed to investigate the effects of platen groove on material removal characteristics.