• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.35-43
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• 2011

In this paper, an analysis on I/Q mismatch characteristics of a quadrature LC VCO(Voltage controlled oscillator) is presented. Based on this analysis, a new I/Q mismatch compensator is proposed. The proposed I/Q mismatch compensator utilizes an amplitude mismatch detector rather than the conventional phase mismatch detector requiring much more wide frequency bandwidth. To verify the proposed circuit, a 2.5GHz quadrature LC VCO was designed in a $0.18{\mu}m$ CMOS process and tested. Test results show that an amplitude mismatch detector achieves similar I/Q mismatch compensation performance as that of the conventional phase mismatch detector. The I/Q mismatch compensator consumes 0.4mA from 1.8V supply voltage and occupies $0.04mm^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.2
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• pp.207-212
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• 2012

In this work, a 70/140 GHz dual-band push-push voltage controlled oscillator(VCO) has been developed based on a 0.18-${\mu}m$ SiGe BiCMOS technology. The lower band and the upper band oscillation frequency varied from 67.9 GHz to 76.9 GHz and from 134.3 GHz to 154.5 GHz, respectively, with tuning voltage swept from 0.2 to 2 V. The calibrated maximum output power for each band was -0.55 dBm and -15.45 dBm. The VCO draws DC current of 18 mA from 4 V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.12
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• pp.941-947
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• 2017

This paper reports a fractional-N phase-locked-loop(PLL) frequency synthesizer that is implemented in a $0.35-{\mu}m$ standard CMOS process and generates a quadrature signal for an FRS terminal. The synthesizer consists of a voltage-controlled oscillator(VCO), a charge pump(CP), loop filter(LF), a phase frequency detector(PFD), and a frequency divider. The VCO has been designed with an LC resonant circuit to provide better phase noise and power characteristics, and the CP is designed to be able to adjust the pumping current according to the PFD output. The frequency divider has been designed by a 16-divider pre-scaler and fractional-N divider based on the third delta-sigma modulator($3^{rd}$ DSM). The LF is a third-order RC filter. The measured results show that the proposed device has a dynamic frequency range of 460~510 MHz and -3.86 dBm radio-frequency output power. The phase noise of the output signal is -94.8 dBc/Hz, and the lock-in time is $300{\mu}s$.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.2
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• pp.36-44
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• 2016

In this paper, an Impulse Radio-Ultra Wide band RF Transceiver for WBAN applications is implemented in $0.18{\mu}m$ CMOS technology. The designed RF transceiver support 3-5GHz UWB low band and employs OOK(On-Off Keying) modulation. The receiver employs non-coherent energy detection architecture to reduce complexity and power consumption. For the rejection of the undesired interferers and improvement of the receiver sensitivity, RF active notch filter is integrated. The VCO based transmitter employs the switch mechanism. As adapt the switch mechanism, power consumption and VCO leakage can be reduced. Also, the spectrum mask is always same at each center frequency. The measured sensitivity of the receiver is -84.1 dBm at 3.5 GHz with 1.579 Mbps. The power consumption of the transmitter and receiver are 0.3nJ/bit and 41 mW respectively.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.969-972
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• 2000

This paper proposes 1.5V-3GHz CMOS PLL with a new delay cell for operating in high frequency and multi chained two stage VCO to improve phase noise performance. The proposed multi-chained architecture is able to reduce a timing jitter or a transition spacing and the newly VCO is operating in high frequency. The PFD circuit designed to prevent fluctuation of charge pump circuit under the locking condition. Simulation results show that the tuning range of proposed VCO is wide at 1.8GHz-3.2Ghz and power dissipation is 0.6mW.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.4 no.2 s.7
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• pp.73-79
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• 2005

Various CMOS quadrature-voltage-controlled oscillators(QVCOS) are designed and fabricated for the comparison of the phase noise characteristic. The first one is that the QVCO is composed of two Colpitts oscillators cross-coupled with PMOS coupling transistors. The second and third ones are the conventional LC VCO and the balanced Colpitts VCO followed by the frequency-divide-by-two, respectively. The simulation result demonstrate that Colpitts schemes show better phase noise performance by 6 dB than that of a conventional stheme in which LC VCO is followed by the frequency-divide-by-two.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.75-82
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• 2010

This paper presents a wideband ${\Delta}{\Sigma}$ fractional-N frequency synthesizer for a multi-band single chip CMOS RFIC transceivers. A wideband VCO utilizes a 6-bit switched capacitor array bank for 2340~3940 MHz frequency range. VCO frequency calibration circuit is designed for optimal capacitor bank code selection before phase locking process. It finishes the calibration process in $2{\mu}s$ over the whole frequency band. The LO generation block has selectable multiple division ratios of ${\div}2$, ${\div}16$, and ${\div}32$ to generate LO I/Q signals for T-DMB/DAB/FM Radio systems in L-Band (1173~1973 MHz), VHF-III (147~246 MHz), VFH-II (74~123 MHz), respectively. The measured integrated phase noise is quite low as it is lower than 0.8 degree RMS over the whole frequency band. Total locking time of the ${\Delta}{\Sigma}$ frequency synthesizer including VCO frequency calibration time is less than $50{\mu}s$. The wideband ${\Delta}{\Sigma}$ fractional-N frequency synthesizer is fabricated in $0.13{\mu}m$ CMOS technology, and it consumes 15.8 mA from 1.2 V DC supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.8
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• pp.41-46
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• 2012

A quadrature voltage controlled oscillator(QVCO) for X-band is presented in this paper. The QVCO has fabricated in Charted $0.13{\mu}m$ CMOS process. The QVCO consists of two cross-coupled differential VCO and two differential buffers. The QVCO is controlled by 4 bit of capacitor bank and control voltage of varactor. To have a linear quality factor of varactors, voltage biases of varactors are difference. The QVCO generates frequency tuning range from 6.591 GHz to 8.012 GHz. The phase noise is -101.04 dBc/Hz at 1MHz Offset when output frequency is 7.150 GHz. The supply voltage is 1.5 V and core current 6.5-8.5 mA.

• The Journal of Korean Institute of Information Technology
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• v.16 no.11
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• pp.61-68
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• 2018

This paper describes design of a 10.525 GHz self oscillating mixer semiconductor IC chip combining voltage controlled oscillator and frequency mixer using silicon CMOS technology for Doppler radar applications. The p-core type VCO included in the self oscillating mixer minimizes the noise contained in the transmitted signal. This noise minimization increases the sensing distance and acts in a direction favorable to the reaching distance and the sensitivity of the motion detection sensor. Simulation results for phase noise show that a VCO designed as a P-core has a noise characteristic of -106.008 dBc / Hz at 1 MHz offset and -140.735 dBc / Hz at 25 MHz offset compared to a VCO designed with N-core and NP-core showed excellent noise characteristics. If a self-oscillating mixer is implemented using a p-core designed VCO in this study, a motion sensor with excellent range and reach sensitivity will be produced.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.295-301
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• 2008

Recently, the demand on mm-wave (millimeter-wave) applications has increased dramatically. While circuits operating in the mm-wave frequency band have been traditionally implemented in III-V or SiGe technologies, recent advances in Si MOSFET operation speed enabled mm-wave circuits realized in a Si CMOS technology. In this work, a 58 GHz CMOS LC cross-coupled VCO (Voltage Controlled Oscillator) was fabricated in a $0.13-{\mu}m$ Si RF CMOS technology. In the course of the circuit design, active device models were modified for improved accuracy in the mm-wave range and EM (electromagnetic) simulation was heavily employed for passive device performance predicttion and interconnection parasitic extraction. The measured operating frequency ranged from 56.5 to 58.5 GHz with a tuning voltage swept from 0 to 2.3 V. The minimum phase noise of -96 dBc/Hz at 5 MHz offset was achieved. The output power varied around -20 dBm over the measured tuning range. The circuit drew current (including buffer current) of 10 mA from 1.5 V supply voltage. The FOM (Figure-Of-Merit) was estimated to be -165.5 dBc/Hz.