• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.960-964
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• 2003

In this paper, the CMOS integrated circuit technique for implementing current-mode maximum and minimum operations scheme is described. The maximum and minimum operations are incorporated into the same scheme with parallel processing. Using this scheme as the basic unit, an analog three-input maximum, median, and minimum circuit is designed. The performance of the proposed circuit shows a very sharp transfer characteristic and high accuracy. The proposed circuit achieves a high-speed operation, which is suitable for real-time systems. The PSPICE simulation results demonstrating the characteristic of the proposed circuit are included.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.455-459
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• 2004

Electrostatic discharge(ESD) is a serious reliability concern. It causes approximately most of all field failures of integrated circuits. Inevitably, future IC technologies will shrink the dimensions of interconnects, gate oxides, and junction depths, causing ICs to be increasingly susceptible to ESD-induced damage [1][2][3]. This thesis shows the optimization of the ESD protection circuit based on the tested results of MM (Machine Model) and HBM (Human Body Model), regardless of existing Reference in fully silicided 0.18 um CMOS process. His thesis found that, by the formation of silicide in a source and drain contact, the dimensions around the contact had a less influence on the ESD robustness and the channel width had a large influence on the ESD robustness [8].

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.798-804
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• 2003

In this paper, We have designed an advanced circuits for controlling the Ink Nozzle of Printer Head We can fully increase the number of nozzle by reducing the number of Input/Output PADs using the proposed new circuit. The proposed circuit is tested with only 20 nozzles to evaluate functional test using FPGA sample chip. The new circuit architecture can be estimated. Full circuit for controlling 320 nozzles was designed and simulated from ASIC full custom methodology, then the circuit was fabricated by applying 3${\mu}{\textrm}{m}$ CMOS process design rule.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.115-122
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• 1996

A 300MHz PLL including FVC (frequency to voltage converter) is designed and fabricated in 0.8$\mu$m CMOS process. In this design, a FVC and a 2nd - order passive filter are added to the conventional charge-pump PLL to improve the acquisition time. The dual-rijng VCO(voltage controlled oscillator) realized in this paper has a frequency range form 208 to 320MHz. Integrated circuits have been fully tested and analyzed in detail and it is proved that pull-in speed is enhanced with the use fo FVC. In VCO range from 230MHz to 310MHz, experimental results show that realized PLL exhibits 4 times faster pull-in speed than that of conventional PLL.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.842-846
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• 2016

This paper presents a DC-DC buck converter which uses a sleep control to improve the power efficiency in a few mW light load condition. The sleep control turns off analog controller building blocks to reduce the static power losses during the off-duty period of pulse width modulation. For verification, a buck converter has been implemented in a $0.18{\mu}m$ CMOS process. The power efficiency has been improved from 76.7% to 82.5% with a 1.2 mW load. The maximum power efficiency is 95% with a 9 mW load.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.3
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• pp.255-259
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• 2008

In this paper, a current-mode integrator for low-voltage, low-power analog integrated circuits is presented. Using the proposed current-mode integrator, the baseband analog filter is designed for WCDMA wireless communication. To verify the proposed current-mode integrator circuit, Hspice simulation using 1.8V TSMC $0.18{\mu}m$ CMOS parameter is performed and achieved 44.9dB gain, 15.7MHz unity gain frequency. The described 3rd-order current-mode baseband analog filter is composed of the proposed current-mode integrator, and SFG(Signal Flow Graph) method is used to realize the baseband filter. The simulated results show 2.12MHz cutoff frequency which is suitable for WCDMA baseband block.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.521-524
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• 1990

There is an increasing interest in high-speed signal processing in modern telecommunication and consumer electronics applications. HDTV, ISDN. A limiting factor in Op-Amp based analog integrated circuits is the limited useful frequency range. This research program will develop a new CMOS Op-Amp architecture with improved gainband width product. The new design CMOS Op-Amp will achieve up to 100MHz unity gainband width with a 1.5-micron design rule.

• Electronics and Telecommunications Trends
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• v.33 no.6
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• pp.34-40
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• 2018

Traditionally, many researchers have conducted research on terahertz technology utilizing optical devices such as lasers. However, nanometer-scale electronic devices using silicon or III-V compound semiconductors have received significant attention regarding the development of a terahertz system owing to the rapid scaling down of devices. This enables an operating frequency of up to approximately 0.5 THz for silicon, and approximately 1 THz for III-V devices. This article reviews the recent trends of terahertz monolithic integrated circuits based on several electronic devices such as CMOS, SiGe BiCMOS, and InP HBT/HEMT, and a particular quantum device, an RTD.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.136-141
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• 2023

The continuous shrinking of transistors in integrated circuits leads to difficulties in improving performance, resulting in the emerging transistors such as nanosheet field-effect transistors. In this paper, we propose a TCAD-machine learning framework of nanosheet FETs to model the current-voltage characteristics. Sentaurus TCAD simulations of nanosheet FETs are performed to obtain a large amount of device data. A machine learning model of I-V characteristics is trained using the multi-layer perceptron from these TCAD data. The weights and biases obtained from multi-layer perceptron are implemented in a PSPICE netlist to verify the accuracy of I-V and the DC transfer characteristics of a CMOS inverter. It is found that the proposed machine learning model is applicable to the prediction of nanosheet field-effect transistors device and circuit performance.

• Proceedings of the KIEE Conference
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• 2003.11b
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• pp.67-70
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• 2003

In this paper the main topologies of one-bit full adders, including the most interesting of those recently proposed, are analyzed and compared for speed, power consumption, and power-delay product. The comparison has been performed on circuits, optimized transistor dimension to minimize power-delay product. The investigation has been carried out with properly defined simulation runs on a Cadence environment using a 0.25-${\mu}m$ process, also including the parasitics derived from layout. Performance has been also compared for different supply voltage values. Thus design guidelines have been derived to select the most suitable topology for the design features required. This paper also proposes a novel figure of merit to realistically compare n-bit adders implemented as a chain of one-bit full adders. The results differ from those previously published both for the more realistic simulations carried out and the more appropriate figure of merit used. They show that, except for short chains of blocks or for cases where minimum power consumption is desired, topologies with only pass transistors or transmission gates are not attractive.