• Journal of IKEEE
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• v.22 no.4
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• pp.1218-1221
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• 2018

This paper presents a low-power 0.6-V 10-bit 200-kS/s double rail-to-rail successive approximation register (SAR) analog-to-digital converter (ADC). The proposed scheme allows input signal with 4 times power which is compared with conventional one by applying proposed rail-to-rail scheme, and that improves signal-to-noise ratio(SNR) of NTV SAR ADCs. The prototype was designed using 65-nm CMOS technology. At a 0.6-V supply and $2.4-V_{pp}$ (differential) and 200-kS/s, the ADC achieves an SNDR of 59.87 dB and consumes 364.5-nW. The ADC core occupies an active area of only $84{\times}100{\mu}m^2$.

• Proceedings of the IEEK Conference
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• summer
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• pp.77-81
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• 2004

In this paper, we propose a analog front-end (AFE) for noncoherent On-Off Keying (OOK) Ultra Wide Band (UWB) system based on power detection. The proposed AFE are designed using 0.18 micron CMOS technology and verified by simulation using SPICE. The proposed AFE consist of Sample-and-Hold block, Analog-to-Digital converter, synchronizer, delayed clock generator and impulse generator. The time resolution of 1ns is obtained with 100MHz system clocks and the synchronized 10-bit digital outputs are delivered to the baseband. The impulse generator produces 1ns width pulse using digital CMOS gates. The simulation results show the feasibility of the proposed UWB AFE systems.

• ETRI Journal
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• v.31 no.6
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• pp.717-724
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• 2009

This paper describes a 1.2 V 12 b 60 MS/s CMOS analog front-end (AFE) employing low-power and flexible design techniques for image signal processing. An op-amp preset technique and programmable capacitor array scheme are used in a variable gain amplifier to reduce the power consumption with a small area of the AFE. A pipelined analog-to-digital converter with variable resolution and a clock detector provide operation flexibility with regard to resolution and speed. The AFE is fabricated in a 0.13 ${\mu}m$ CMOS process and shows a gain error of 0.68 LSB with 0.0352 dB gain steps and a differential/integral nonlinearity of 0.64/1.58 LSB. The signal-to-noise ratio of the AFE is 59.7 dB at a 60 MHz sampling frequency. The AFE occupies 1.73 $mm^2$ and dissipates 64 mW from a 1.2 V supply. Also, the performance of the proposed AFE is demonstrated by an implementation of an image signal processing platform for digital camcorders.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.689-692
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• 1999

This paper describes a 10-bit 75-MHz CMOS current-mode DAC designed for 0.8${\mu}{\textrm}{m}$ double-poly double-metal CMOS technology. This D/A converter is implemented using a current cell matrix that can drive a resistive load without output buffer. In the DAC. a current source is proposed to reduce the linearity error caused by the threshold-voltage variations over a wafer and the glitch energy caused by the time lagging, The integral and differential linearity error are founded to be within $\pm$0.35 LSB and $\pm$0.31 LSB respectively. The maximum conversion rate is about 80 MS/s. The total power dissipation is 160 ㎽ at 75 MS/s conversion rate.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.164-167
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• 2000

This paper introduces the design of high-speed analog-to-digital converter for hard disk drive (HDD) read channel. This is based on autozero technique for low-error rate, and Double Speed Dual ADC(DSDA) technique lot efficiently increasing the conversion speed of A/D converter. This An is designed by 6bit resolution, 800M sample/s maximum conversion rate, 390㎽ power dissipation, one clock cycle latency in 0.65 $\mu\textrm{m}$ CMOS technology.

• Journal of IKEEE
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• v.18 no.1
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• pp.172-178
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• 2014

This paper describes the design technique and the method of analog front-end to measure the saturation of hemoglobin with oxygen sensor. To process the $SpO_2$ value from the sensor, the current data from the sensor should be converted into voltage domain. Designed analog front-end usually converts the current data from the sensor into voltage domain data to pass it on analog-to-digital converter called ADC with a different level of gain characteristics. This circuit was fabricated in a $0.11{\mu}m$ CMOS technology and has 4 level of gain properties. The occupied area is $0.174mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.5
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• pp.312-320
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• 2003

This work describes an 8b 200 MHz 0.18 urn CMOS analog-to-digital converter (ADC) based on a pipelined architecture for flat panel display applications. The proposed ABC employs an improved bootstrapping technique to obtain wider input bandwidth than the sampling tate of 200 MHz. The bootstrapuing technique improves the accuracy of the input sample-and-hold amplifier (SHA) and the fast fourier transform (FFT) analysis of the SHA outputs shows the 7.2 effective number of bits with an input sinusoidal wave frequency of 500 MHz and the sampling clock of 200 MHz at a 1.7 V supply voltage. Merged-capacitor switching (MCS) technique increases the sampling rate of the ADC by reducing the number of capacitors required in conventional ADC's by 50 % and minimizes chip area simultaneously. The simulated ADC in a 0.18 um n-well single-poly quad-metal CMOS technology shows an 8b resolution and a 73 mW power dissipation at a 200 MHz sampling clock and a 1.7 V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.59-64
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• 2006

The slope of the ramp generator in a single slope ADC(analog-to-digital converter) suffers from process and frequency variation. This variation in ramp slope causes ADC gain variation and eventually limits the performance of the ISP(image signal processing) in a CIS(CMOS image sensor) that uses the single slope ADC. This paper proposes a ramp slope BISC(built-in-self-calibration) scheme for CIS. The CIS with proposed BISC was fabricated with a $0.35{\mu}m$ process. The measurement results show that the proposed architecture effectively calibrate the ramp slope against process and clock frequency variation. The silicon area overhead is less than $0.7\%$ of the full chip area.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.352-353
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• 2013

본 연구에서는 12bit 1MSps 연속 근사화 아날로그-디지털 변환기(Analog to Digital Converter : ADC)를 설계하였다. 설계된 아날로그-디지털 변환기는 0.18um 1Metal 6Poly CMOS 공정을 이용하였고, Cadence tool을 이용하여 시뮬레이션 및 레이아웃 하였다. 시뮬레이션 결과 1.8V의 공급전압에서 전력 소모는 6mW였고, 입력 신호의 주파수가 100kHz 일 때, SNDR은 69.53dB, 유효 비트수는 11.26bit의 결과를 보였다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.706-711
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• 2014

A low power 6-bit flash ADC that uses an input voltage range detection algorithm is described. An input voltage level detector circuit has been designed to overcome the disadvantages of the flash ADC which consume most of the dynamic power dissipation due to comparators array. In this work, four digital input voltage range detectors are employed and each input voltage range detector generates the specific clock signal only if the input voltage falls between two adjacent reference voltages applied to the detector. The specific clock signal generated by the detector is applied to turn the corresponding latched comparators on and the rest of the comparators off. This ADC consumes 68.82 mW with a single power supply of 1.2V and achieves 4.3 effective number of bits for input frequency up to 1 MHz at 500 MS/s. Therefore it results in 4.6 pJ/step of Figure of Merit (FoM). The chip is fabricated in 0.13-um CMOS process.