• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.41-42
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• 2008

본 논문에서는 As-doped ZnO 박막의 플라즈마 식각 특성 및 메커니즘에 관하여 실험을 수행 하였다. As-doped ZnO 박막 식각 실험은 유도 결합 플라즈마 식각 장비(inductively coupled plasma;ICP)와 $BCl_3$/Ar 플라즈마에 첨가된 $Cl_2$가스의 비, RF 전력, DC bias voltage, 공정 압력에 대한 식각 속도의 변화를 관찰 하였다. $BCl_3$/Ar 플라즈마에 $Cl_2$ 가스 첨가량 6 sccm 까지는 증가하지만 그 이후 $Cl_2$ 가스의 첨가량이 증가할 때 식각속도가 감소하였다. 이는 플라즈마 내에서 Cl 라디칼의 밀도가 증가함에 따라서 $Ar^+$의 에너지가 감소와 비휘발성 식각 부산물의 증가에 의하여 효과적인 물리적 식각이 이루어 지지 못한 것으로 판단된다. OES를 이용하여 플라즈마 내에서 라디칼들의 빛의 세기를 측정하였고, 식각 후 As-type ZnO 박막 표면에서의 화학적 결합을 보기위해 XPS 분석을 실행하였다.

• Bulletin of the Korean Chemical Society
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• v.22 no.3
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• pp.267-270
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• 2001

The adsorption of chlorine on a Pt(111) surface at 90 K has been studied using scanning tunneling microscopy (STM) in ultra-high vacuum environments. The adsorbed chlorine atoms give rise to two different ordered structures, (3${\times}$3)-Cl and c(4${\times}$2)- Cl, depending on the coverage. It has been determined from the STM image that the absolute coverage of (3${\times}$3)-Cl structure is 0.44, which is not in agreement with coverage calibrated by a low energy electron diffraction technique together with an Auger electron spectrometer and a thermal desorption spectrometer. The Cl atoms bound to on-top sites at the Pt(111)(3${\times}$3)-Cl surface appeared to effectively perturb the density of states of Pt atoms, as compared with that bound to bridging sites. The other ordered structure, c(4${\times}$2)-Cl, with small domain sizes, consists of both on-top and bridge-bonded species with a saturation coverage of 0.5.

• Journal of Surface Science and Engineering
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• v.40 no.2
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• pp.98-102
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• 2007

[ $NiCl_2$ ] and poly-L-lysine coated protein chip plates have been fabricated using a spin coating system. Water has been used as solvent and scratching effects on glass slides and ITO have been investigated. We also observed the surface properties of $NiCl_2$ and poly-L-lysine coated slides by using PSA(Particle size analyzer) and AFM(Atomic force microscope). The AFM results imply that the surface patterns created in the spin coating system determine the protein adsorption. Adsorption of histidine-tagged KRS proteins immobilized on glass slides and ITO was analyzed using a BAS image system. The results suggest that the scratching effect was increased ability of protein adsorption.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.634-639
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• 2001

We investigated the etching characteristics of chromium films by using Cl$_2$/O$_2$ gas mixtures with electron cyclotron resonance plasma. In order to examine the chemical etch characteristics of Cr films by using Cl$_2$/O$_2$ gas plasma, we obtained the etch rate with various gas mixing ratios. By X-ray photoelectron spectroscopy, the surface reaction on the chromium films during the etch was examined. From narrow scan analyses of Cr, Cl, and O, it was confirmed that a chromium oxychlorie (CrCl$_{x}$O$_{y}$) layer was formed on the surface by the etch using Cl$_2$/O$_2$ gas mixtures. We observed a new characteristic emission line during the etch of chromium films using Cl$_2$/O$_2$ gas mixtures by an optical emission spectroscopy. It was found that the peak intensity of this emission line had a tendency compatible with the etch rate. The origin of this emission line was discussed in detail. At the same time, the etched profile was also examined by scanning electron microscope.e.e.

• Journal of Microbiology and Biotechnology
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• v.17 no.4
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• pp.644-649
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• 2007

Response surface model was developed for predicting the growth rates of Salmonella enterica sv. Typhimurium in tryptic soy broth (TSB) medium as a function of combined effects of temperature, pH, and NaCl. The TSB containing six different concentrations of NaCl (0, 2, 4, 6, 8, and 10%) was adjusted to an initial of six different pH levels (pH 4, 5, 6, 7, 8, 9, and 10) and incubated at 10 or $20^{\circ}C$. In all experimental variables, the primary growth curves were well $(r^2=0.900\;to\;0.996)$ fitted to a Gompertz equation to obtain growth rates. The secondary response surface model for natural logarithm transformations of growth rates as a function of combined effects of temperature, pH, and NaCl was obtained by SAS's general linear analysis. The predicted growth rates of the S. Typhimurium were generally decreased by basic (9, 10) or acidic (5, 6) pH levels or increase of NaCl concentrations (0-8%). Response surface model was identified as an appropriate secondary model for growth rates on the basis of coefficient determination $(r^2=0.960)$, mean square error (MSE=0.022), bias factor $(B_f=1.023)$, and accuracy factor $(A_f=1.164)$. Therefore, the developed secondary model proved reliable predictions of the combined effect of temperature, NaCl, and pH on growth rates for S. Typhimurium in TSB medium.

• Journal of Surface Science and Engineering
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• v.56 no.6
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• pp.386-392
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• 2023

In this work, we describe the reduction kinetics of gold nanoparticles synthesized by plasma discharge in aqueous solutions with varied voltages and precursor (HAuCl₄) concentrations. The reduction rate of [AuCl₄]^- was determined by introducing NaBr to the gold colloidal solution synthesized by plasma discharge, serving as a catalyst in the reduction process. We observed that [AuCl₄]^- was completely reduced when its characteristic absorption peak at 380 nm disappeared, indicating the absence of [AuCl₄]^- for ligand exchange with NaBr. The reduction rate notably increased with the rise in discharge voltage, attributable to the intensified plasma generated by ionization and excitation, which in turn accelerated the reduction kinetics. Regarding precursor concentration, a lower concentration was found to retard the reduction reaction, significantly influencing the reduction kinetics due to the presence of active H⁺ and H radicals. Therefore, the production of strong plasma with high plasma density was observed to enhance the reduction kinetics, as evidenced by optical emission spectroscopy.

• Applied Chemistry for Engineering
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• v.7 no.1
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• pp.101-108
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• 1996

The dynamic surface tension of GL12 (easily biodegradable nonionic surfactant and mild to skin), LAS and SLES aqueous solutions and that of mixed surfactant systems were measured by the maximum bubble pressure method at different mixing ratios. The effects of various salt such as NaCl, CsCl and urea on the dynamic surface tension of mixed surfactant systems were also studied. The dynamic surface tension of GL12 was not influenced by the presence of salts. On the contrary, the dynamic surface tensions of anionic surfactants (LAS and SLES) were significantly affected by the salts. In the mixed surfactant systems, the effect of salt increased as the composition of anionic LAS or SLES increased in the GL12/LAS and GL12/SLES mixtures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.785-791
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• 2001

High dielectric (Ba, Sr) TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of Cl$_2$/Ar mixing ration. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400 $\AA$/mim and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. Etching products were redeposited on the surface of BST and resulted in varying the nature of crystallinity. Therefore, we investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS) atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The morphology of the etched surfact was analyzed by AFM. A smoothsurface(roughness ~2.8nm) ws observed under Cl$_2$(20)/Ar(80), rf power of 600 W, dc bias voltage of -250 V and pressure of 10 mTorr. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinities of the etched BST film under Ar only and Cl$_2$(20)/Ar(80) were maintained as similar to as-deposited BST. However, intensity of BST(100) orientation under Cl$_2$ only plasma was abruptly decreased. This indicated that CI compounds were redeposited on the etched BST surface and resulted in changed of the crystallinity of BST during the etch process.

• Food Science of Animal Resources
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• v.38 no.3
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• pp.487-497
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• 2018

Controlling of microorganisms in the industrial process is important for production and distribution of hatching and table eggs. In the previous study, we reported that chlorine dioxide ($ClO_2$) gas of a proper concentration and humidity can significantly reduce the load of Salmonella spp. on eggshells. In this study, we compared microbial reduction efficacy on egg's surface using hatching eggs and table eggs, internal quality of table eggs, and hatchability after both the conventional method (washing and UV expose, fumigation with formalin) and $ClO_2$ gas disinfection. Application of 40 ppm $ClO_2$ gas to the table and hatching eggs, respectively, reduced the aerobic plate count (APC) with no statistical difference compared with the conventional methods. Additionally, we didn't observed that any significant difference in albumin height, Haugh unit (HU), and yolk color, this result confirms that 40 ppm $ClO_2$ had no effect on the internal quality of the table eggs, when comparing with the UV treatment method. The hatchability of hatching eggs was not statistical different between formaldehyde fumigation and 80 ppm $ClO_2$ gas treatment, though the value was decreased at high concentration of 160 ppm $ClO_2$ gas. From these results, we recommend that $ClO_2$ gas can be used as a safe disinfectant to effectively control egg surface microorganisms without affecting egg quality.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.496-502
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• 1999

In this study, n-GaN samples were etched using planar inductively coupled $Cl_2$/$H_2$plasmas and the effects of plasma conditions on the etch properties, surface composition, and ohmic contact formation were investigated as a function of gas combination. As the addition of hydrogen to the $Cl_2$plasma increased to 100%, GaN etch rates decreased due to the reduction of chlorine radical density. Even though the variation of the surface composition is limited under $50\AA$, the surface composition was also changed from Ga-rich to N-rich with the increased addition of hydrogen to $Cl_2$. Etch products by the reaction between Ga in GaN and Cl in $Cl_2$ plasma were investigated using OES analysis during the GaN etching. The value of specific resistivity of the contact formed on the n-GaN etched using 100% $Cl_2$plasma was 3.1$\times$10\ulcorner$\Omega$$\textrm{cm}^2$, and which was lower than that formed on the non-etched n-GaN. However, the resistively was increased with the increased hydrogen percent in $Cl_2$/$H_2$.