The Etching Characteristics of Cr Films by Using $Cl_{2}O_{2}$ Gas Mixtures

$Cl_{2}O_{2}$ 가스에 의한 크롬 박막의 식각 특성 고찰

  • 박희찬 (국방과학연구소 종합시험단) ;
  • 강승열 (한국전자통신연구원 회로소자연구소) ;
  • 이상균 (한국전자통신연구원 회로소자연구소) ;
  • 최복길 (공주대학교 정보통신공학부) ;
  • 권광호 (한서대학교 전자공학과)
  • Published : 2001.08.01

Abstract

We investigated the etching characteristics of chromium films by using Cl$_2$/O$_2$ gas mixtures with electron cyclotron resonance plasma. In order to examine the chemical etch characteristics of Cr films by using Cl$_2$/O$_2$ gas plasma, we obtained the etch rate with various gas mixing ratios. By X-ray photoelectron spectroscopy, the surface reaction on the chromium films during the etch was examined. From narrow scan analyses of Cr, Cl, and O, it was confirmed that a chromium oxychlorie (CrCl$_{x}$O$_{y}$) layer was formed on the surface by the etch using Cl$_2$/O$_2$ gas mixtures. We observed a new characteristic emission line during the etch of chromium films using Cl$_2$/O$_2$ gas mixtures by an optical emission spectroscopy. It was found that the peak intensity of this emission line had a tendency compatible with the etch rate. The origin of this emission line was discussed in detail. At the same time, the etched profile was also examined by scanning electron microscope.e.e.

Keywords

References

  1. in the Tenth International Vacuum Microelectronics Conference Microfabrication and Characterization of Gridded Polycrystalline Silicon Field Emitter Devices S. E. Huq;M. Huang;P. R. Wilshaw;P. D. Prewett
  2. Appl. Phys. Lett. v.71 Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition J. W. Tsai;C. Y. Huang;Y. H. Tai;H. C. Cheng;F. C. Su;F. C. Luo;H. C. Tuan
  3. Appl. phys. Lett. v.72 Investigation of intrinsic channel characteristics of hydrogenated amorphous silicin thin-film transistors by gated-four-probe structure C. S. Chiang;C. Y. Chen;J. Kanicki;K. Takechi
  4. Journal of Materials Science Letters v.18 Additive oxygen effects in Cl₂plasma etching of chrome films kwang-Ho Kwon;Seung-Youl Kang;Sang-Ho Park;Hee-Kyung Sung;Dong-Keun Kim;Jong-Ha Moon
  5. 전기전자재료학회논문지 v.13 no.1 자장 강화 반응성 이온 건식 식각 장비를 이용한 몰리브덴 박막의 식각 특성 연구 김남훈;권광호;김창일;장의구
  6. 전기전자재료학회논문지 v.13 no.3 Ar/CHF₃플라즈마를 이용한 SBT 박막에 대한 식각 메카니즘 연구 서정우;이원재;유병곤;장의구;김창일
  7. The Merck Index M. Windholz(Ed.)
  8. Handbook of chemistry and physics(71st edition) D. R. Lide(Ed.)
  9. Handbook of X-ray Photoelectron Spectroscopy J. F. Moulder;W. F. Stickle;P. E. Sobol;K. D. Bomben
  10. J. Electrochem. Soc. v.132 LOW TEMPERATURE OXIDATION OF SILICON IN A MICROWAVE-DISCHARGED OXYGEN PLASMA S. Kimura;E. Murakami;K. Miyake;T. Warabisako;H. Sunami;T. Tokuyama
  11. J. Vac. Sci. Technol. B v.14 Optical emissionspectra fobrication of SiO₂films T. T. Chau;K. C. Kao
  12. J. Appl. Phys. v.70 Excitation mechanisms of oxygen atoms in a low pressure O₂radio-frequency plasma E. J. H. Collart;J. A. G. Baggerman;R. J. Visser
  13. J. Vac. Sci. Technol. A v.14 A simple optical emission method for measuring percent dissociations of feed gases in plasmas: Application to Cl₂in a high-density helical resonator plasma V. M. Donnelly
  14. Semicon. Sci. Trchnol. v.8 Optical Emission Spectroscopy of ECR Discharges for Ⅲ-V Semiconductor Processing S. J. Pearton;T. A. keel;A. katz;F. Ren
  15. Bonding, Energy Levels and Bands in Inorganic Solids J. A. Duffy
  16. Luminescent Materials G. Blasse;B. C. Grabmaier
  17. 전자전기재료학회논문지 v.13 no.3 고밀도 플라즈마에 의한 PZT 박막의 식각 특성 연구 안태현;서용진;김창일;장의구