• 전기화학회지
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• 제13권2호
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• pp.89-95
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• 2010

Cu(In, Ga)$Se_2$ (CIGS) 박막은 다원화합물이기 때문에 제조공정이 매우 까다롭다. 진공장치를 사용하는 제조 방법으로 동시증착법, 스퍼터링법 +셀렌화가 있고, 비진공 제조 방법으로 전기화학적인 전착법이 있다. 각 방법에 있어서도 출발 물질의 종류에 따라 다양한 제조 방법이 동원 될 수 있다. 진공증착에 의한 방법은 고품질의 박막을 얻는데 사용 되고 있으나 고가의 진공장비가 사용되므로 대면적화에 따른 제조비용 측면에서 문제가 있다. 이에 비하여, 전착법은 간단하면서도 저가로 대면적화를 이룰 수 있다는 장점 때문에, 많은 관심이 기울여지고 있다. 본 연구에서는 Mo/Glass전극위에 Ga/(In + Ga) = 0.3의 성분비를 만족시키는 CIGS 박막을 전기화학적으로 제조하기 위하여, $Cu^{2+}$, $In^{3+}$, $Ga^{3+}$, $Se^{4+}$ 4성분을 모두 포함하는 전해질 수용액 내에서, 4성분의 이온들이 동시에 환원되는 전위를 조절하여 CIGS 박막을 전착 하였다. SEM을 이용하여 얻어진 CIGS 박막의 전착된 시료의 표면을 관찰하였고, EDS로 그 조성을 분석하였다. 또한, XRD를 이용하여 전착시료의 열처리 전후의 결정성변화를 조사하였다.

• 한국재료학회지
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• 제30권4호
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• pp.204-210
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• 2020

ZnO thin films are of considerable interest because they can be customized by various coating technologies to have high electrical conductivity and high visible light transmittance. Therefore, ZnO thin films can be applied to various optoelectronic device applications such as transparent conducting thin films, solar cells and displays. In this study, ZnO rod and thin films are fabricated using aqueous chemical bath deposition (CBD), which is a low-cost method at low temperatures, and environmentally friendly. To investigate the structural, electrical and optical properties of ZnO for the presence of citrate ion, which can significantly affect crystal form of ZnO, various amounts of the citrate ion are added to the aqueous CBD ZnO reaction bath. As a result, ZnO crystals show a nanorod form without citrate, but a continuous thin film when citrate is above a certain concentration. In addition, as the citrate concentration increases, the electrical conductivity of the ZnO thin films increases, and is almost unchanged above a certain citrate concentration. Cu(In,Ga)Se₂ (CIGS) solar cell substrates are used to evaluate whether aqueous CBD ZnO thin films can be applicable to real devices. The performance of aqueous CBD ZnO thin films shows performance similar to that of a sputter-deposited ZnO:Al thin film as top transparent electrodes of CIGS solar cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.97-97
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• 2013

Recently, Cu2ZnSn(S,Se)4 (CZTSS), which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTSS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of 104 cm-1, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTSS based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. I will briefly overview the recent technological development of CZTSS thin film solar cells and then introduce our research results mainly related to sputter based process. CZTSS thin film solar cells are prepared by sulfurization of stacked both metallic and sulfide precursors. Sulfurization process was performed in both furnace annealing system and rapid thermal processing system using S powder as well as 5% diluted H2S gas source at various annealing temperatures ranging from $520^{\circ}C$ to $580^{\circ}C$. Structural, optical, microstructural, and electrical properties of absorber layers were characterized using XRD, SEM, TEM, UV-Vis spectroscopy, Hall-measurement, TRPL, etc. The effects of processing parameters, such as composition ratio, sulfurization pressure, and sulfurization temperature on the properties of CZTSS absorber layers will be discussed in detail. CZTSS thin film solar cell fabricated using metallic precursors shows maximum cell efficiency of 6.9% with Jsc of 25.2 mA/cm2, Voc of 469 mV, and fill factor of 59.1% and CZTS thin film solar cell using sulfide precursors shows that of 4.5% with Jsc of 19.8 mA/cm2, Voc of 492 mV, and fill factor of 46.2%. In addition, other research activities in our lab related to the formation of CZTS absorber layers using solution based processes such as electro-deposition, chemical solution deposition, nano-particle formation will be introduced briefly.

• 한국재료학회지
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• 제24권3호
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• pp.123-128
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• 2014

To realize high-performance thin film solar cells, we prepared CIGS by the co-evaporation technique on both sodalime and Corning glass substrates. The structural and efficient properties were investigated by varying the thickness of the Mo:Na layer, where the total thickness of the back contact was fixed at 1${\mu}m$. As a result, when the Mo:Na thickness was 300 nm on soda-lime glass, the measured Na content was 0.28 %, the surface morphology was a plate-like compact structure, and the crystallinity by XRD showed a strong peak of (112) preferential orientation together with relatively intense (220) and (204) peaks as the secondary phases influenced crystal formation. In addition, the substrates on soda-lime glass effected the lowest surface roughness of 2.76 nm and the highest carrier density and short circuit current. Through the optimization of the Mo:Na layer, a solar conversion efficiency of 11.34% was achieved. When using the Corning glass, a rather low conversion efficiency of 9.59% was obtained. To determine the effects of the concentration of sodium and in order to develop a highefficiency solar cells, a very small amount of sodium was added to the soda lime glass substrate.

• 한국표면공학회지
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• 제51권2호
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• pp.116-125
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• 2018

Aluminum-doped zinc oxide (AZO) is a commonly used material for the front contact layer of chalcopyrite $CuInGaSe_2$ (CIGS) based thin film solar cells since it satisfies the requisite optical and electrical properties with low cost and abundant elemental availability. Low-resistivity and high-transmission front contacts have been developed for high-performance CIGS solar cells, and nearly meet the required performance. However, the durability of the cell especially for the corrosion resistance of AZO films has not been studied intensively. In this work, AZO films were prepared on Corning glass 7059 substrates by radio frequency magnetron sputtering depending on the hydrogen content. The electrical and optical properties and electrochemical corrosion resistance of the AZO films were evaluated as a function of the hydrogen content. With increasing hydrogen content to 6 wt%, the crystallinity, crystal size, and surface roughness of the films increased, and the resistivity decreased with increased carrier concentration, Hall mobility, oxygen vacancies, and $Zn(OH)_2$ binding on the AZO surface. At a hydrogen content of 6 wt%, the corrosion resistance was also relatively high with less columnar morphology, shallow pore channels, and lower grain boundary angles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.389-389
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• 2012

Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.398.1-398.1
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• 2014

The $Cu_2ZnSnSe_4$ (CZTSe) thin films solar cell is one of the next generation candidates for photovoltaic materials as the absorber of thin film solar cells because it has optimal bandgap (Eg=1.0eV) and high absorption coefficient of $10^4cm^{-1}$ in the visible length region. More importantly, CZTSe consists of abundant and non-toxic elements, so researches on CZTSe thin film solar cells have been increasing significantly in recent years. CZTSe thin film has very similar structure and properties with the CIGS thin film by substituting In with Zn and Ga with Sn. In this study, As-deposited CZTSe thin films have been deposited onto soda lime glass (SLG) substrates at different deposition condition using Pulsed Laser Deposition (PLD) technique without post-annealing process. The effects of deposition conditions (deposition time, deposition temperature) onto the structural, compositional and optical properties of CZTSe thin films have been investigated, without experiencing selenization process. The XRD pattern shows that quaternary CZTSe films with a stannite single phase. The existence of (112), (204), (312), (008), (316) peaks indicates all films grew and crystallized as a stannite-type structure, which is in a good agreement with the diffraction pattern of CZTSe single crystal. All the films were observed to be polycrystalline in nature with a high (112) predominant orientation at $2{\theta}{\sim}26.8^{\circ}$. The carrier concentration, mobility, resistivity and optical band gap of CZTSe thin films depending on the deposition conditions. Average energy band gap of the CZTSe thin films is about 1.3 eV.

• 한국재료학회지
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• 제31권11호
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• pp.619-625
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• 2021

Cu₂ZnSn(S,Se)₄ (CZTSSe) based thin-film solar cells have attracted growing attention because of their earth-abundant and non-toxic elements. However, because of their large open-circuit voltage (V_oc)-deficit, CZTSSe solar cells exhibit poor device performance compared to well-established Cu(In,Ga)(S,Se)₂ (CIGS) and CdTe based solar cells. One of the main causes of this large V_oc-deficit is poor absorber properties for example, high band tailing properties, defects, secondary phases, carrier recombination, etc. In particular, the fabrication of absorbers using physical methods results in poor surface morphology, such as pin-holes and voids. To overcome this problem and form large and homogeneous CZTSSe grains, CZTSSe based absorber layers are prepared by a sputtering technique with different RTA conditions. The temperature is varied from 510 ℃ to 540 ℃ during the rapid thermal annealing (RTA) process. Further, CZTSSe thin films are examined with X-ray diffraction, X-ray fluorescence, Raman spectroscopy, IPCE, Energy dispersive spectroscopy and Scanning electron microscopy techniques. The present work shows that Cu-based secondary phase formation can be suppressed in the CZTSSe absorber layer at an optimum RTA condition.

• Bulletin of the Korean Chemical Society
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• 제32권12호
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• pp.4332-4336
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• 2011

The chalcopyrite-type $CuInSe_2$ is a remarkable material for thin film solar cells owing to its electronic structure and optical response. Single-phase sphere-like $CuInSe_2$ nanocrystallite particles were prepared by a facile noninjection method with triethanolamine as the complexing agent and the solvent simultaneously. The period of the reaction was the key to form single-phase $CuInSe_2$ nanocrystals at $240^{\circ}C$. TEM, XRD, XPS, EDX investigations were performed to characterize the morphology and the detailed structure of as-synthesized $CuInSe_2$ nanocrystals. All of the analysis results proved that the synthesized nanocrystals were pure phase and close to the stoichiometric ratio rather than a simple mixture. The band gap of the obtained $CuInSe_2$ nanocrystals was $1.03{\pm}0.03$ eV.

• 한국전자통신학회논문지
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• 제15권4호
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• pp.665-670
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• 2020

CIGS 박막 태양 전지의 버퍼층은 흡수층과 윈도우층 사이의 밴드정렬(band alignment)을 통해 에너지 변환 효율을 향상시킨다. ZnS는 무독성의 II-VI 반도체 화합물로서 직접천이형 광대역 밴드갭과 n형 전도성을 가지며, 높은 광투과성, 높은 굴절률 등의 우수한 전기적, 광학적 특성을 가지고 있고, 우수한 격자정합을 가지는 물질이다. 이 연구에서, RF 마그네트론 스퍼터링 방법에 의해 증착 후 급속 열처리에 의해 제작된 ZnS 버퍼층 박막의 구조적, 광학적 특성의 상관관계에 대해 고찰하였다. (111), (220), (311) 면의 섬아연광 입방정 구조를 확인할 수 있고, 상대적으로 저온에서 급속열처리를 수행한 시료에서는 (002) 면의 우르쯔광 육방정 구조가 함께 나타나는 다결정이 되었다. 고온에서 급속열처리 수행한 시료에서는 섬아연광 입방정 구조의 단결정으로 상전이 된다. 화학적 성분 분석을 통해서 Zn/S의 비율이 화학양론에 근접한 시료에서 섬아연광 입방정 구조의 단결정이 나타났음을 확인하였다 급속열처리 온도가 증가할수록 흡수단이 다소간 단파장 쪽으로 이동되고, 가시광 파장 범위에서 평균 광투과율이 증가하는 경향성을 보이며 500℃ 조건에서는 80.40%로 향상되었다.