• Horticultural Science & Technology
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• v.33 no.4
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• pp.575-584
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• 2015

Drought stress is a crucial environmental factor determining crop survival and productivity. The goal of this study was to clearly identify a new drought stress-tolerance gene in Brassica rapa. From KBGP-24K microarray data with the B. rapa ssp. pekinensis inbred line 'Chiifu' under drought stress treatment, a gene which was named BrDSR (B. rapa Drought Stress Resistance) was chosen among 738 drought-responsive unigenes. BrDSR function has yet to be determined, but its expression was induced over 6-fold by drought. To characterize BrDSR, the gene was isolated from B. rapa inbred line 'CT001' and found to contain a 438-bp open reading frame encoding a 145 amino acid protein. The full-length cDNA of BrDSR was used to construct an over-expression vector, 'pSL100'. Tobacco transformation was then conducted to analyze whether the BrDSR gene can increase drought tolerance in plants. The BrDSR expression level in T1 transgenic tobacco plants selected via PCR and DNA blot analyses was up to 2.6-fold higher than non-transgenic tobacco. Analysis of phenotype clearly showed that BrDSR-expressing tobacco plants exhibited more tolerance than wild type under 10 d drought stress. Taking all of these findings together, we expect that BrDSR functions effectively in plant growth and survival of drought stress conditions.

• Science of Emotion and Sensibility
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• v.13 no.1
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• pp.235-242
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• 2010

Emotion science is one of the rapidly expanding engineering/scientific disciplines which has a major impact on human society. Such growing interests in emotion science and engineering owe the recent trend that various academic fields are being merged. In this paper we review the recent techniques in the measuring the emotion related elements and applications which include animal model system to investigate the neural network and behaviour, artificial nose/neuronal chip for in-depth understanding of sensing the outer stimuli, metabolic controlling using emotional stimulant such as sounds. In particular, microfabrication techniques made it possible to construct nano/micron scale sensing parts/chips to accommodate the olfactory cells and neuron cells and gave us a new opportunities to investigate the emotion precisely. Recent developments in the measurement techniques will be able to help combine the social sciences and natural sciences, and consequently expand the scope of studies.

• International Journal of Highway Engineering
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• v.3 no.4 s.10
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• pp.127-136
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• 2001

To increase the structural integrity of concrete box culvert good compaction by the dynamic compaction roller with bi9 capacity is as effective as good backfill materials. It is needed for effective compaction that a compaction roller closes to concrete structure with high frequency. However structural distress of the culvert could be occur due to the excessive earth pressure by great dynamic compaction load. To investigate the characteristics of Induced stress by compaction, a box culvert was constructed with changing cushion materials and compaction methods. Two types of cushion material such as tire rubber chip and EPS(Expanded Polystyrene) were used as cushion panels and they are set on the culverts before backfill construction. Laboratory test result of cushion material says that the value of dynamic elastic modulus of rubber is lesser than that of EPS. On the other hand, material damping of rubber material is greater than that of EPS. In most case, dynamic compaction rollers with 10.5 ton weights were used and vibration frequency was applied 30Hz for the great compaction energy. This paper presents the main results on the characteristics of dynamic earth pressures during compaction. The amounts of induced dynamic pressures$(\Delta\sigma\;h)$ by compaction are affected with construction condition such as compaction frequency, depth of pressure cell, distance between roller and the wall of culvert and roller direction. Based on the measured values dynamic lateral pressure on the culverts, it could be said that orthogonal direction of roller to the length of culvert is more effective to compaction efficiency than parallel direction.

• Korean Journal of Remote Sensing
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• v.36 no.5_2
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• pp.881-891
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• 2020

Recently, the Ministry of Land, Infrastructure and Transport and the Ministry of Science and ICT are developing the Land Observation Satellite (CAS-500) to meet increased demand for high-resolution satellite images. Expected image products of CAS-500 includes precision orthoimage, Digital Surface Model (DSM), change detection map, etc. The quality of these products is determined based on the geometric accuracy of satellite images. Therefore, it is important to make precision geometric corrections of CAS-500 images to produce high-quality products. Geometric correction requires the Ground Control Point (GCP), which is usually extracted manually using orthoimages and digital map. This requires a lot of time to acquire GCPs. Therefore, it is necessary to automatically extract GCPs and reduce the time required for GCP extraction and orthoimage generation. To this end, the Precision Image Processing (PIP) System was developed for CAS-500 images to minimize user intervention in GCP extraction. This paper explains the products, processing steps and the function modules and Database of the PIP System. The performance of the System in terms of processing speed, is also presented. It is expected that through the developed System, precise orthoimages can be generated from all CAS-500 images over the Korean peninsula promptly. As future studies, we need to extend the System to handle automated orthoimage generation for overseas regions.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.50-50
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• 1999

마이크로 공정을 이용한 초소형 정밀 기계는 공정 기술과 재료 기술의 발전에 의하여 더욱 소형화되고 있으며 특히 기능을 갖는 부분과 이 부분을 제어하는 주변회로의 on-chip화의 요구가 증가되기 시작하였다. 이와 같은 추세에 있어서의 문제점은 초소형 정밀기계 부품 소자의 구동을 위한 에너지원의 개발이다. 즉, 소자의 크기가 작아진 것에 부합되는 초소형의 전지가 필요하게 된 것이다. 따라서 보다 완전한 초소형 정밀 기계 및 마이크로 소자의 구현을 위하여 마이크로 소자와 혼성 (Hybrid) 되어 이용될 수 있는 고성능 및 초소형의 전지의 개발이 필수적이다. 초소형 전지의 구현을 위하여 Li계의 2차 전지를 선택하여 이를 박막화하고 반도체 공정을 도입할 수 있다. 이러한 전지를 박막형 2차 전지 또는 박막형 마이크로 전지(thin film Secondary Battery : TFSB or Thin Film Micro-Battery : TFMB)라 하며 이러한 2차 전지는 일반적인 벌크 전지와 동일하게 cathode/Electolyte/Anode의 구조를 갖는다. 박막의 특성상 전해질은 고상의 물질을 사용하는 것이 벌크형 2차 전지와 다른 점이다. TFSB의 성능은 주로 cathode에 의하여 결정되며 지금까지 많은 cathode 물질에 대한 연구 보고가 발표되고 있다. 반도체 공정을 이용한 TFMB의 제작시 무엇보다 중요한 점은 우수한 고상 전해질 및 anode 물질의 선택에 있다. 최근에 2차 전지를 위한 carbon계 anode를 대체할 수 있는 SnO에 대한 보고가 있는데 이는 한 개의 Sn 원자당 2개 이사의 Li가 반응하여 높은 용량을 갖는 전지의 제작이 가능하기 때문이다. Sno2의 anode는 매우 높은 충전용량을 갖는데 첫 번째 방전시에 Li2O를 생성하여 비가역적 반응을 나타내고 계속되는 충방전 동안 Li-Sn 합금이 생성되어 2차전지의 가역적 반응을 가능하게 한다. SnO2 는 대기중에서 Li 금속보다 안정하기 때문에 전지의 제작 공정 및 사용 면에서 매우 우수한 물질이지만 아직까지 SnO2 구조적 특성과 전지의 충, 방전 특성에 대한 관계의 규명을 위한 정확한 정설은 제시되고 있지 못하다. 본 연구에서는 TFSB anode 물질로써 SnOx박막을 상온에서 여러 전도성 콜렉터 위에 증착하여 그 충, 방전 특성을 보고하였다. 증착된 SnOx박막의 표면은 SEM, AFM으로 분석하였으며 구조의 분석은 XR와 Auger electron spectroscope로 하였다. 충, 방전 특성을 분석하기 위하여 리늄 foil을 대극과 참조 전극으로 하여 EC:DMC=1:1, 1M LiPF6 액체 전해질을 사용한 Half-Cell를 구성하여 100회 이상의 정전류 충, 방전 시험을 행하였다. Half-Cell test 결과 박막의 구조, 콜렉터의 종류 및 Sn/O비에 따라 서로 다른 충, 방전 거동을 나타내었다.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.11-15
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• 2001

In this paper, hermetic sealing technology was studied for wafer level packaging of the RF-MEMS devices. With the flip-chip bonding method. this non-conductive B-stage epoxy sealing will be profit to the MEMS device sealing. It will be particularly profit to the RF-MEMS device sealing. B-stage epoxy can be cured by 2-step and hermetic sealing can be obtained. After defining 500 $\mu\textrm{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was, then, aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line could be maintained during the sealing process. The height of the seal-line was controlled within $\pm$0.6 $\mu\textrm{m}$ in the 4 inches wafer and the bonding strength was measured to about 20MPa by pull test. The leak rate, that is sealing characteristic of the B-stage epoxy, was about $10^{-7}$ cc/sec from the leak test.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.17-26
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• 2010

Pb-Sn solder is rapidly being replaced by lead-free solder for board-level interconnection in microelectronic package assemblies due to the environmental protection requirement. There is a general lack of mechanical reliability information available on the lead-free solder. In this study, thermo-mechanical behaviors of wire-bond plastic ball grid array (WB-PBGA) package assemblies are characterized by high-sensitivity moire interferometry. Experiments are conducted for two types of WB-PBGA packages that have Pb-Sn solder and lead-free solder as joint interconnections. Using real-time moire setup, fringe patterns are recorded and analyzed for several temperatures. Bending deformations of the assemblies and average strains of the solder balls are investigated and compared for the two type of WB-PBGA package assemblies. Results show that shear strain in #3 solder ball located near the chip shadow boundary is dominant for the failure of the package with Pb-Sn solder, while normal strain in #7 most outer solder ball is dominant for that with lead-free solder. It is also shown that the package with lead-free solder has much larger bending deformation and 10% larger maximum effective strain than the package with Pb-Sn solder at same temperature level.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.43-50
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• 2014

By the trends of electronic package to be smaller, thinner and more integrative, the reliability of interconnection between Si chip and printed circuit board is required. This paper reports on a study of high speed shear energy of Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder joints with different the thicknesses of electroless Ni-P deposit. A high speed shear testing of solder joints was conducted to find a relationship between the thickness of Ni-P deposit and the brittle fracture in electroless Ni-P deposit/SAC405 solder. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the fractured pad surface with and without $HNO_3$ vapor treatment. The high speed shear energy of SAC405 solder joint with $1{\mu}m$ Ni-P deposit was found to be lower without $HNO_3$ vapor, compared to those of over $3{\mu}m$ Ni-P deposit. This could be due to the edge of solder resist in $1{\mu}m$ Ni-P deposit, which provides a fracture location for the weakened shear energy of solder joints and brittle fracture in high speed shear test. With $HNO_3$ vapor, the brittle fracture mode in high speed shear test decreased with increasing the thickness of Ni-P deposit. Then the roughness (Ra) of Ni-P deposits decreased with increasing its thickness. Thus, this gives the evidence that the decrease in roughness of Ni-P deposit for Eelectroless Ni/ Electroless Pd/ Immersion Au (ENEPIG) surface play a critical role for improving the robustness of SAC405 solder joint.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.5
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• pp.233-240
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• 2012

White LEDs (light-emitting diodes) are promising new-generation light sources which can replace conventional lamps due to their high reliability, low energy consumption and eco-friendly effects. This paper briefly reviews recent progress of oxy/nitride host phosphor and quantum dot materials with broad excitation band characteristics for phosphor-converted white LEDs. Among oxy/nitride host materials, $M_2Si_5N_8$ : $Eu^{2+}$, $MAlSiN_3$ : $Eu^{2+}$ M-SiON (M = Ca, Sr, Ba), ${\alpha}/{\beta}$-SiAlON : $Eu^{2+}$ are excellent phosphors for white LED using blue-emitting chip. They have very broad excitation bands in the range of 440~460 nm and exhibit emission from green to red. In this paper, In this review we focus on recent developments in the crystal structure, luminescence and applications of the oxy/nitride phosphors for white LEDs. In addition, the application prospects and current trends of research and development of quantum dot phosphors are also discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.204-209
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• 2007

We synthesized a series of $CaS_{1-x}Se_x:Eu$ red-emitting phosphors for application in phosphor-converted three-band white light emitting diode(LED). The photoluminescence and structural properties of $CaS_{1-x}Se_x:Eu$ were examined. The $CaS_{1-x}Se_x:Eu$ phosphors have a strong absorption at 455 nm, which is the emission wavelength of a blue LED. CaS:Eu has a red omission peak at 651 nm due to the $4f^65d^1(T_{2g}){\rightarrow}4f^7(^8S_{7/2})$ transition of the $Eu^{2+}$. The emission peak of $CaS_{1-x}Se_x:Eu$ is shifted from 651 to 598 nm with increasing Se content. $CaS_{1-x}Se_x:Eu$ can be used as wavelength-tunable red-emitting phosphors pumped by a blue LED. We also fabricated a three-band white LED by doping $SrGa_2S_4:Eu$ and $CaS_{0.50}Se_{0.50}:Eu$ phosphors onto a blue LED chip.