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Real-Time Acquisition Method of Posture Information of Arm with MEMS Sensor and Extended Kalman Filter (MEMS센서와 확장칼만필터를 적용한 팔의 자세정보 실시간 획득방법)

  • Choi, Wonseok;Kim, HeeSu;Kim, Jaehyun;Cho, Youngki
    • The Journal of the Korea Contents Association
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    • v.20 no.6
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    • pp.99-113
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    • 2020
  • In the future, robots and drones for the convenience of our lives in everyday life will increase. As a method for controlling this, a remote control or a human voice method is most commonly used. However, the remote control needs to be operated by a person and can not ignore ambient noise in the case of voice. In this paper, we propose an economical attitude information acquisition method to accurately acquire the posture information of the arm in real time under the assumption that the surround drones or robots can be controlled wirelessly with the posture information of the arm. For this purpose, the extended Kalman filter was used to eliminate the noise of the arm position information. in order to detect the arm movement, a low cost MEMS type sensor was applied to secure the economical efficiency of the apparatus. To increase the wear ability of the arm, We developed a compact and lightweight attitude information acquisition system by integrating all functions into one chip as much as possible. As a result, the real-time performance of 1 ms was secured and the extended Kalman filter was applied to acquire the accurate attitude information of the arm with noise removed and display the attitude information of the arm in real time. This provides a basis for generating commands using real-time attitude information of the arm.

Microstructure and Electrical Properties of ZnO-Zn2BiVO6-Mn3O4 Varistor (ZnO-Zn2BiVO6-Mn3O4 바리스터의 미세구조와 전기적 특성)

  • Hong, Youn-Woo;Ha, Man-Jin;Paik, Jong-Hoo;Cho, Jeong-Ho;Jeong, Young-Hun;Yun, Ji-Sun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.5
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    • pp.313-319
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    • 2018
  • This study introduces a new investigation report on the microstructural and electrical property changes of $ZnO-Zn_2BiVO_6-Mn_3O_4$ (ZZMn), where 0.33 mol% of $Mn_3O_4$ and 0.5 mol% of $Zn_2BiVO_6$ were added to ZnO (99.17 mol%) as liquid phase sintering aids. $Zn_2BiVO_6$ contributes to the decrease of sintering temperatures by up to $800^{\circ}C$, and segregates its particles at the grain boundary, while $Mn_3O_4$ enhances ${\alpha}$, the nonlinear coefficient, of varistor properties up to ${\alpha}=62$. In comparison, when the sintering temperature is increased from $800^{\circ}C$ to $1,000^{\circ}C$, the resistivity of ZnO grains decreases from $0.34{\Omega}cm$ to $0.16{\Omega}cm$, and the varistor property degrades. Oxygen vacancy ($V_o^{\bullet}$) (P1, 0.33~0.36 eV) is formed as a dominant defect. Two different kinds of grain boundary activation energies of P2 (0.51~0.70 eV) and P3 (0.70~0.93 eV) are formed according to different sintering temperatures, which are tentatively attributed to be $ZnO/Zn_2BiVO_6$-rich interface and ZnO/ZnO interface, respectively. Accordingly, this study introduces a progressive method of manufacturing ZnO chip varistors by way of sintering ZZMn-based varistor under $900^{\circ}C$. However, to procure a higher reliability, an in-depth study on the multi-component varistors with double-layer grain boundaries should be executed.

Effects of CaCO3 on the Defects and Grain Boundary Properties of ZnO-Co3O4-Cr2O3-La2O3 Ceramics (ZnO-Co3O4-Cr2O3-La2O3 세라믹스의 결함과 입계 특성에 미치는 CaCO3의 영향)

  • Hong, Youn-Woo;Ha, Man-Jin;Paik, Jong-Hoo;Cho, Jeong-Ho;Jeong, Young-Hun;Yun, Ji-Sun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.5
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    • pp.307-312
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    • 2018
  • Liquid phases in ZnO varistors cause more complex phase development and microstructure, which makes the control of electrical properties and reliability more difficult. Therefore, we have investigated 2 mol% $CaCO_3$ doped $ZnO-Co_3O_4-Cr_2O_3-La_2O_3$ (ZCCLCa) bulk ceramics as one of the compositions without liquid phase sintering additive. The results were as follows: when $CaCO_3$ is added to ZCCLCa ($644{\Omega}cm$) acting as a simple ohmic resistor, CaO does not form a secondary phase with ZnO but is mostly distributed in the grain boundary and has excellent varistor characteristics (high nonlinear coefficient ${\alpha}=78$, low leakage current of $0.06{\mu}A/cm^2$, and high insulation resistance of $1{\times}10^{11}{\Omega}cm$). The main defects $Zn_i^{{\cdot}{\cdot}}$ (AS: 0.16 eV, IS & MS: 0.20 eV) and $V_o^{\bullet}$ (AS: 0.29 eV, IS & MS: 0.37 eV) were found, and the grain boundaries had 1.1 eV with electrically single grain boundary. The resistance of each defect and grain boundary decreases exponentially with increasing the measurement temperature. However, the capacitance (0.2 nF) of the grain boundary was ~1/10 lower than that of the two defects (~3.8 nF, ~2.2 nF) and showed a tendency to decrease as the measurement temperature increased. Therefore, ZCCLCa varistors have high sintering temperature of $1,200^{\circ}C$ due to lack of liquid phase additives, but excellent varistor characteristics are exhibited, which means ZCCLCa is a good candidate for realizing chip type or disc type commercial varistor products with excellent performance.

Plasma Etching Process based on Real-time Monitoring of Radical Density and Substrate Temperature

  • Takeda, K.;Fukunaga, Y.;Tsutsumi, T.;Ishikawa, K.;Kondo, H.;Sekine, M.;Hori, M.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.93-93
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    • 2016
  • Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

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그래핀 표면 접착력을 이용한 전주도금 공정

  • No, Ho-Gyun;Park, Mi-Na;Lee, Seung-Min;Bae, Su-Gang;Kim, Tae-Uk;Ha, Jun-Seok;Lee, Sang-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.131-131
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    • 2016
  • 기원전 5000년 이집트에서부터 시작된 도금은 시간이 지남에 따라 점점 발전하여, 1900년대에 들어 전기를 이용한 도금공정이 개발되었고, 현재 뿌리산업으로써 각종 제조업에 널리 이용되고 있다. 도금 공정은 금속을 부식으로부터 보호하고, 제품의 심미성과 기능성, 생산성 등을 높이기 위해 주로 이용된다. 전주도금 공정은 완벽하게 동일한 형태의 생산품을 다량으로 제작 할 수 있기 때문에, 그 높은 생산성으로 주목 받고 있다. 특히, 나노/마이크로 크기의 정밀 소자 등을 가공하는 차세대 기술인 LIGA공정과 접목이 가능하다는 장점이 있다. 몰드를 이용하여 복제하는 방식인 전주 도금은 도금공정이 끝난 후 몰드와 완성된 제품을 분리해내는 추가공정이 필연적으로 발생하게 되는데, 둘 사이의 접착력을 낮추기 위하여 몰드의 표면에 이형박리제를 도포하게 된다. 이형박리제로는 전기가 잘 흐르면서 접착력이 낮은 이산화 셀렌이나 중크롬산이 주로 이용되지만, 원활한 박리를 위해서는 그 두께가 30 um 이상 확보되어야 하기 때문에 정밀한 미세구조 전주도금이 어렵다는 문제점이 있다. 또한 이와 같은 화학 약품들은 매우 유독하기 때문에 추가적인 폐수 처리 공정이 필요하며, 작업자의 안전을 위협하고 심각한 환경 오염을 초래한다는 추가적인 문제가 발생한다. 따라서, 매우 얇고 친 환경적이며 안전한 전주도금 이형박리제에 대한 연구가 요구되고 있다. 본 연구에서는 전주도금 몰드로 사용한 구리의 표면에 TCVD를 이용하여 단일 층 그래핀을 성장시킨 후, 그래핀이 코팅된 몰드에 구리를 전주도금하여 박리하였다. 박리 후 그래핀은 몰드에 손상 없이 남아있는 것을 Raman microscopy를 통해서 확인하였고, 몰드와 그래핀 사이의 접착력 (약 $0.71J/m^2$)에 비해 그래핀과 전주도금 샘플간에 낮은 접착력 (약 $0.52J/m^2$)을 갖는 것을 확인하였다. 이와 같이 낮은 접착력을 통해 박리 시 표면구조의 손상 없이 정밀한 구조의 미세 패턴구조를 형성할 수 있었다. 전주도금을 이용한 전극 형성과 고분자와의 융합을 통해 유연기판을 제작하여 bending 실험을 진행하였다. $90^{\circ}$의 bending 각도로 10000회 이하에서는 저항의 변화가 없었고, LED chip을 mounting한 후 곡률반경 4.5 mm까지 bending을 진행하여도 이상 없이 LED가 발광하는 것을 확인하였다. 위와 같은 전주도금 공정을 이용하여 고집적 전자기기, 광학기기, 센서기기 등의 다양한 어플리케이션의 부품제조에 활용될 수 있을 것으로 기대한다.

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A Study on PWM Speed Controller for Long line Fishing Motor (어로 작업용 연승기 전동기의 PWM 속도제어기에 관한 연구)

  • Vuong, Duc-Phuc;Bae, Cherl-O;Ahn, Byong-Won
    • Journal of the Korean Society of Marine Environment & Safety
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    • v.21 no.1
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    • pp.97-102
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    • 2015
  • The long line fishing machine is combined with motor and two disc rollers has used on the small size fishing-boat under 1 ton located in near Jeollanam-do seaside. The long line fishing motor is controlled only one direction because the fishing line is loaded heavily at pulling up. On this paper we made the long line fishing 400W power motor controller which it was usually applied under 1 ton fishing boat, and designed the controller using PWM chip, Half bridge driver and MOSFET for one direction motor control. Furthermore some user convenience devices were added like battery indicator and safety protection circuit for battery overdischarge and battery source wire mismatch connection. So we protected the battery from overdicharging when the battery voltage was below 11.5V and fishermen didn't need to worry about source lines misconnection anymore. We confirmed the test version of controller was the good working condition at land and sea.

Luminescence Properties of White LED with Different CdSe nanoparticles Phosphor Layer (CdSe 나노입자 형광층 구조에 따른 백색 LED 발광 특성 연구)

  • Chung, Won-Keun;Yu, Hong-Jeong;Park, Sun-Hee;Chun, Byung-Hee;Kim, Sung-Hyun
    • Korean Chemical Engineering Research
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    • v.49 no.3
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    • pp.320-324
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    • 2011
  • TOPO/TOP capped CdSe nanoparticles were synthesized via thermal-solvent method. The 540 nm green and 620 nm red emitting CdSe nanoparticles were obtained by controlling the reaction time and temperature. Phosphor conversion white LED was produced combining a 460 nm emitting InGaN LED chip as an excitation source with 540 and 620 nm CdSe nanoparticles as phosphors. The single or double phosphor layer was fabricated by mixing with epoxy, and investigated the effects on the luminous properties of the white LED. The single phosphor layer white LED showed 5.78 lm/W with CIE of (0.36, 0.45) in reddish white, and the double phosphor layer white LED showed 7.28 lm/W with that of (0.32, 0.34) in pure white at 20 mA. When the 400 nm near-UV LED was applied to optical pumping source, the luminous efficiency of white LED was enhanced to 8.76 lm/W.

An Assessment on the Behavior of Nitrogenous Materials during the First High-rate Phase in Composting Process (퇴비화 공정의 1차 발효단계에서 질소성 물질의 거동 평가)

  • Jeong, Yeon-Koo;Kim, Jin-Soo
    • Journal of the Korea Organic Resources Recycling Association
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    • v.8 no.3
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    • pp.81-88
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    • 2000
  • Composting of N-rich wastes such as food waste and wastewater sludges can be associated loss of with substantial gaseous N, which means loss of an essential plant nutrient but may also lead to environmental pollution. We investigated the behavior of nitrogenous materials during the first high-rate phase in composting of food waste. Air dried food waste was mixed with shredded waste paper or wood chip and reacted in a bench scale composting reactor. Samples were analyzed for pH, ammonia, oxidized nitrogen and organic nitrogen. The volatilized ammonia nitrogen was also analyzed using sulfuric acid as an absorbent solution. Initial progress of composting reaction greatly influenced the ammonification of organic nitrogen. A well-balanced composting reaction with an addition of active compost as an inoculum resulted in the promoted mineralization of organic nitrogen and volatilization of ammonia. The prolongation of initial low pH period delayed the production of ammonia. It was also found that nitrogen loss was highly dependent on the air flow supplied. With an increase in input air flow, the loss of nitrogen as an ammonia also increased, resulted in substantial reduction of ammonia content in compost. The conversion ratio of initial nitrogen into ammonia was in the range of 28 to 38% and about 77~94% of the ammonia produced was escaped as a gas. Material balance on the nitrogenous materials was demonstrated to provide an information of importance on the behavior of nitrogen in composting reaction.

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A Hardwired Location-Aware Engine based on Weighted Maximum Likelihood Estimation for IoT Network (IoT Network에서 위치 인식을 위한 가중치 방식의 최대우도방법을 이용한 하드웨어 위치인식엔진 개발 연구)

  • Kim, Dong-Sun;Park, Hyun-moon;Hwang, Tae-ho;Won, Tae-ho
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.11
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    • pp.32-40
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    • 2016
  • IEEE 802.15.4 is the one of the protocols for radio communication in a personal area network. Because of low cost and low power communication for IoT communication, it requires the highest optimization level in the implementation. Recently, the studies of location aware algorithm based on IEEE802.15.4 standard has been achieved. Location estimation is performed basically in equal consideration of reference node information and blind node information. However, an error is not calculated in this algorithm despite the fact that the coordinates of the estimated location of the blind node include an error. In this paper, we enhanced a conventual maximum likelihood estimation using weighted coefficient and implement the hardwired location aware engine for small code size and low power consumption. On the field test using test-beds, the suggested hardware based location awareness method results better accuracy by 10 percents and reduces both calculation and memory access by 30 percents, which improves the systems power consumption.

Distribution of Oncogenic Human Papillomavirus Genotypes at High Grade Cervical Lesions above CIN 2 Grade with Histological Diagnosis

  • Kim, Geehyuk;Park, Sungyoung;Wang, Hye-young;Kim, Sunghyun;Park, Sangjung;Yu, Kwangmin;Lee, Boohyung;Ahn, Seung-Ju;Kim, Eun-Joong;Lee, Dongsup
    • Biomedical Science Letters
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    • v.22 no.2
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    • pp.37-45
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    • 2016
  • High risk human papillomavirus (HR-HPV) is major risk factor for uterine cervical cancer. There are approximately 15 types of HR-HPV. Liquid based cytology samples (116 samples) with high grade cervical lesions belonging to cervical intraepithelial neoplasia (CIN) 2, CIN 3, carcinoma in situ (CIS) and squamous cell carcinoma (SCC) were used after histologic confirmation. HR-HPV genotype assay was conducted using DNA chips. The HR-HPV infection rate was 81.9% with SCC samples showing the highest HR-HPV infection rate of 31%. CIN 3, CIS and CIN 2 showed infection rates of 25%, 16.4% and 9.5%, respectively. According to age with HR HPV infection rate, the 30~39 years-old group showed the highest infection rate by 92.3%. According to distribution with HR HPV genotyping, HPV 16 showed the highest infection rate by 42.3% whereas HPV 33 and HPV 58 showed infection rates of 11.7% and 10.8%, respectively. HPV 18 which is the second most common infected HPV genotype in the world showed 3.6%. Of the three most common oncogenic HR-HPV genotypes in CIN 2, we detected HPV 16, 35, 58; CIN 3 was HPV 16, 33, 58; CIS was HPV 16, 58, 33 (35/52); and SCC was HPV 16, 33, and 18 (31/52/58). Among the HPV 18, CIN 2, CIN 3, CIS and SCC showed 0.9%, 0.9%, 0% and 1.8%, respectively. The most often used preventive vaccines for cervical cancers use HPV 16 and HPV 18 as targets. However, results derived from this study suggest that a preventive vaccine against HPV 16 and HPV 18 would not be optimal for populations in this study.