• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권1호
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• pp.24-29
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• 2004

$CF_4$ gas is one of the most useful gases in modern technologies for semiconductor fabrication. However, there are many problems which should be solved in order to fabricate semiconductor device, for example, etching speed drop due to ion charge-up and etching selectivity drop due to the high electron energy. One of useful method in order to suppress their damages above is pulsed-time modulated plasma (PM). However, transient responses of charged particles occur when the source power is turned-on and -off in PM method. To control plasma properties in detail, such a transient phenomenon must be investigated. In this paper, we investigate $CF_4$ RF plasma properties under a one-dimensional fluid model. And also for dynamic and stable control of $CF_4$ plasmas, we investigated the transient behavior of the plasmas after step up or down of the amplitude of the power source voltage $V_s$(t). Fundamental properties of transient $CF_4$ plasmas was discussed. Furthermore, we intend to discuss new method for pulsed-time plasma modulation.

• 전기학회논문지P
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• 제56권1호
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• pp.1-5
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• 2007

Study on the electron transport coefficient in mixtures of CF4 and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $CF_4$ and Ar, were used. The differences of the transport coefficients of electrons in $CF_4$ mixtures of Ar, have been explained by the deduced energy distribution functions for electrons and the complete collision cross-sections for electrons. The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4-Ar$ mixtures shows the Maxwellian distribution for energy. That is, $f({\varepsilon})$ has the symmetrical shape whose axis of symmetry is a most probably energy. The proposed theoretical simulation techniques in this work will be useful to predict the fundamental process of charged particles and the breakdown properties of gas mixtures. A two-term approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1548-1549
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• 2011

High voltage cryogenic insulation issues need to be addressed in order to promote the commercialization of high temperature superconducting (HTS) equipment. As a fundamental step in the development of the optimum bushings for HTS devices, the breakdown characteristics of liquid nitrogen mixed with liquefied insulating gases such as $N_2$, $SF_6$, and $CF_4$ have been investigated. In order to investigate the possibility of substituting $CF_4$ gas for $SF_6$ gas for the bushings of HTS electrical equipment, AC withstanding voltage tests have been performed. In this paper, finding the maximum electric field $E_{max}$ using utilization factor ${\eta}$. This result is applicable to developing the real scale HTS equipment of the design parameters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.375-378
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• 2002

We investigated the reduction of etching damage by additive O$_2$ in etching gas and recovery of etching damage by O$_2$ annealing. The PZT thin films were etched using additive Ar or O$_2$ into Cl$_2$/CF$_4$ gas mixing ratio of 8/2. In order to recover ferroelectric properties of PZT thin films after etching, the etched PZT thin films were annealed at 600 C in O$_2$ atmosphere for 10 min. The remanent polarization is decreased seriously and fatigue is accelerated in the PZT sample etched in Ar/(C1$_2$+CF$_4$) plasma, whereas these characteristics are improved in O$_2$/(Cl$_2$/CF$_4$). From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Pb-O, Zr-O and Ti-O peaks are changed and the etch byproducts such as metal chloride and metal fluoride are reduced by O$_2$ annealing. From electron probe micro analyzer (EPMA) and auger electron spectroscopy(AES), O$_2$ vacancy is observed after etching. In x-ray diffraction (XRD), the structure damage in the additive O$_2$ into C1$_2$/CF$_4$ is reduced and the improvement of ferroelectric behavioral annealed sample is consistent with the increase of the (100) and (200) PZT peaks.

• 한국염색가공학회지
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• 제5권4호
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• pp.29-41
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• 1993

In order to surface Hydrophobilization of Poly(ethylene terephthalate) (PET) fiber samples were treated in the atmosphere of CF$_{4}$ or $C_{2}$F$_{6}$glow discharge. The sample used in this study was PET film which is 75$\mu$m thick made by Teijin, O-Type(Japan). The cleaned samples were placed in plasma reactor made of pyrex glass cylinder, and plasma processing was carried out by glow discharge of CF$_{4}$ or $C_{2}$F$_{6}$ gas, being continuously fed by gas flow and continuously pumped out by a vacuum system. Electric power source for generate plasma state was sustained alternating current(60Hz) and voltage was sustained 600 volt. The duration of plasma treatment varied from 15 to 120 seconds except special case, the monomer gase pressure varied from 0.02 to 0.3 Torr and power range was 10 to 90 watts. The hydrophobic features of changed PET surface were evaluated by contact angle measurement and surface chemical characteristics were analyzed by ESCA. Results can be summerized as follows. 1. The most favorable setting position of substrate was the center area between the two electrodes. 2. $C_{2}$F$_{6}$ discharge current was lower than that of CF$_{4}$ when same voltage was sustained. Treated efficiency between CF$_{4}$ and $C_{2}$F$_{6}$ did not revealed significant differences under same electric power(wattage). 3. When monomer pressure is very low below 0.02 torr, as though substrate is exposed to CF$_{4}$ or $C_{2}$F$_{6}$ plasma, it tend to be hydrophilic through a little of fluorine bond and a great deal of oxidizing reaction. 4. There brought good hydrophobilization when monomer pressure was more 0.1 torr and duration of glow discharge treatment was over 45 seconds. When monomer pressure was too high, discharge current became low. Although prolong the duration, there was no more high hydrophobilization. 5. According to ESCA analysis, there were a little CF bond and a prevailing CF$_{2}$ bond in CF$_{4}$-treated substrate. There were CF$_{3}$, a little CF and a prevailing CF$_{2}$ bond in $C_{2}$F$_{6}$-treated substrate.d substrate.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1553-1555
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• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric $YMnO_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of $YMnO_3$ thin film is $300{\AA}/min$ at $Ar/Cl_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, YFx compounds were found on the surface of $YMnO_3$ thin film which is etched in $Ar/Cl/CF_{4}$ plasma. The etch profile of $YMnO_3$ film is improved by addition of $CF_4$ gas into the $Ar/Cl_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.190-194
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• 2002

In this study, the etching of Au thin films have been performed in an inductively coupled CF4/Cl2/Ar plasma. The etch properties were measured as the CF4 adds from 0 % to 30 % to the Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. Other parameters were fixed at a rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a 10 % additive CF4 into Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Au peaks are changed. There is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point and the etching products can be sputtered by Ar ion bombardment. We obtained the cleaned and steep profile.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.178-181
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• 2003

In this work, we etched PZT films with various additive gases ($O_2$ and Ar) in $Cl_2/CF_4$ plasmas, while mixing ratio was fixed at 8/2. After the etching, the plasma induced damages are characterized in terms of hysteresis curves, leakage current, retention properties, and switching polarization. When the electrical properties of PZT etched in $O_2$ or Ar added $Cl_2/CF_4$ were compared, the value of remanent polarization in $O_2$ added $Cl_2/CF_4$ plasma is higher than that in Ar. added plasma. The maximum etch rate of the PZT thin films was 145 nm/min for 30% Ar added $Cl_2/CF_4$ gas having mixing ratio of 8/2 and 110 nm/min for 10% $O_2$ added to that same gas mixture. In order to recover the ferroelectic properties of the PZT thin films after etching, we annealed the etched PZT thin films at $550^{\circ}C$ in an $O_2$ atmosphere for 10 min. From the hysteresis curves, leakage current, retention property and switching polarization, the reduction of the etching damage and the recovery via the annealing was turned out to be more effective when $O_2$ was added to $Cl_2/CF_4$ than Ar. X-ray diffraction (XRD) showed that the structural damage was lower when $O_2$ was added to $Cl_2/CF_4$. And the improvement in the ferroelectric properties of the annealed samples was consistent with the increased intensities of the (100) and the (200) PZT peaks.

• 전기학회논문지P
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• 제59권2호
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• pp.197-201
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• 2010

$SF_6$ gas would be used in power transformer, GIS (Gas insulated switchgear) and so on because of its electrically superior insulation and chemically stable structure. Recently, the reduction of $SF_6$ is required to avoid global warming and the researches on the dilution of $SF_6$ with other gases have been carried out. $SF_6$ mixture gases with $N_2$ and $C_xF_y$ have drawn attention to the synergy effect. However, in order to understand the mechanism of the synergy effect, it is important to analyze and evaluate properties of mixture gases quantitatively. In this paper, we investigated the mechanism of synergy effect from electron collision processes and electron energy distribution by solving Boltzmann equation with propagator method. Three kinds of gases for dilution of $SF_6$ ($SF_6/N_2$, $SF_6/CF$4 and $SF_6/C_4F_8$) are considered in this simulation. On the properties of $SF_6/N_2$ mixture gas, the variation of reduced electric field was shown highly within 0%~40% mixtures of $SF_6$. And the more low-level electron energy has been distributed, the higher insulation capability has appeared.