• Membrane Journal
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• v.26 no.3
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• pp.220-228
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• 2016

Carbon molecular sieve (CMS) hollow fiber membranes were prepared by carbonizing a polyimide precursor manufactured by non-solvent induced phase separation process. Gas separation performance of CMS hollow fiber membrane was investigated on the effect of three carbonization conditions. CMS membrane with the highest gas separation performance was obtained at the pyrolysis temperature of $250-450^{\circ}C$: $N_2$, $SF_6$, and $CF_4$ permeance were 20, 0.32, 0.48 GPU, respectively, and $N_2/SF_6$ and $N_2/CF_4$ selectivities were 62 and 42, respectively. In the $SF_6/CF_4/N_2$ mixture gas test, when the stage cut was 0.2, the recovery ratio of $SF_6$ and $CF_4$ was over 99% and 98%. $SF_6$ concentration ratio was 4.5 times higher than the $SF_6$ concentration at the feed side. From the results, it was concluded that CMS membrane was one of the promising membranes for recovery Perfluorocompound gases process.

• Korean Chemical Engineering Research
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• v.49 no.4
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• pp.485-490
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• 2011

Tetrafluoromethane($CF_4$) has been used as etching and chamber cleaning gases for semiconductor manufacturing processes. These gases need to be removed efficiently because of their strong absorption of infrared radiation and long atmospheric lifetime which causes the global warming effect. We have developed a waterjet gliding arc plasma system in which plasma is combined with waterjet and investigated optimum operating conditions for efficient $CF_4$ destruction through enlarging discharge region and producing large amount of OH radicals. The operating conditions are waterjet flow rate, initial $CF_4$ concentration, total gas flow rate, specific energy input. Through the parametric studies, the highest $CF_4$ destruction of 97% was achieved at 2.2% $CF_4$, 7.2 kJ/L SEI, 9 L/min total gas flow rate and 25.5 mL/min waterjet flow rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.959-964
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• 2001

We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI mm Was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was $8300{\AA}/min$ and vertical profile was approximately acquired $90^{\circ}$ at $CF_{4}/(CF_{4}+O_{2})$ of 0.2. The selectivies of polyimide to PR and $SiO_{2}$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of $O_{2}/CF_{4}$ were investigated by optical emission spectrometer (OES).

• Clean Technology
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• v.19 no.2
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• pp.113-120
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• 2013

The treatment of chemically stable perflourocompounds (PFCs) requires a large amount of energy. An energy efficient arc plasma system has been developed to overcome such disadvantage. $CF_4$, $SF_6$ and $NF_3$ were injected into the plasma torch directly, and net plasma power was estimated from the measurement of thermal efficiency of the system. Effects of net plasma power, waste gas flow rate and additive gases on the destruction and removal efficiency (DRE) of PFCs were examined. The calculation of thermodynamic equilibrium composition was also conducted to compare with experimental results. The average thermal efficiency was ranged from 60 to 66% with increasing waste gas flow rate, while DRE of PFCs was decreased with increasing gas flow rate. On the other hand, DRE of each PFCs was increased with the increasing input power. Maximum DREs of $CF_4$, $SF_6$ and $NF_3$ were 4%, 15% and 90%, respectively, without reaction gas at the fixed input power and waste gas flow rate of 3 kW and 70 L/min. A rapid increase of DRE was found using hydrogen or oxygen additional gases. Hydrogen was more effective than oxygen to decompose PFCs and to control by-products. The major by-product in the arc plasma process with hydrogen was hydrofluoric acid that is easy to be removed by a wet scrubber. DREs of $CF_4$, $SF_6$ and $NF_3$ were 25%, 39% and 99%, respectively, using hydrogen additional gas at the waste gas flow rate of 100 L/min and the input power of 3 kW.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.61 no.1
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• pp.13-17
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• 2012

Ionization and Attachment Coefficients in pure $CH_4$, $CF_4$ and mixtures of $CF_4$ and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $CH_4$, $CF_4$ and Ar, were used. The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4$-Ar mixtures shows the Maxwellian distribution for energy. That is, f(${\varepsilon}$) has the symmetrical shape whose axis of symmetry is a most probably energy. The proposed theoretical simulation techniques in this work will be useful to predict the fundamental process of charged particles and the breakdown properties of gas mixtures.

• Clean Technology
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• v.23 no.2
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• pp.181-187
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• 2017

The perfluorocompounds (PFCs) emitted from the semiconductor and display manufacture is treated by abatement systems which use various technologies, such as combustion, thermal, plasma, catalyst. However, it is required that the system should overcome their drawbacks with excess energy consumption and low removal efficiency. The new technology using combination of pressure swing adsorption and excess enthalpy combustion for the reduction of PFCs emissions were developed and analyzed its characteristics. PFCs concentration ratio and PFCs loss factor were calculated from measuring concentration of PFCs at the calculated by comparing concentration of PFCs at the combustor's inlet and outlet. There were performance evaluations with various gas flow for comparing energy consumption and removal efficiency with existing equipments. The concentration ratio and the loss factor of PFCs were 1.65, 8.2%, respectively, when the total gas flow of the pressure swing absorption (PSA) inlet was 204 liter per minute (LPM) and $CF_4$ concentration was 1412 ppm. In comparison with existing system at constant condition, $CF_4$ removal efficiency for a porous media combustion (PMC) showed the improvement more than 16% and the consumed energy was also reduced up to approximately 41%. Then, the total gas flow introduced into PMC and $CF_4$ concentration were 91-LPM and 2335 ppm, respectively, and the destruction and removal efficiency of $CF_4$ was about 96% at 19-LPM $CH_4$, and 40-LPM $O_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.381-387
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• 2007

The excellent dielectric properties of $SF_6$(sulfur hexafluoride) have lead to its wide range of application in the field of high voltage insulation. Because there has been some recent concern regarding the environmental impacts of $SF_6$ binary gas mixtures, with $SF_6$ as the main component, have been the subject of active research. Scientists have long been interested in the possible use of gaseous fluorocarbons, including $CF_4$ (Carton Tetrafluoride), in high voltage applications due to their inert character and high dielectric strength. This paper presents experimental results concerning the AC breakdown characteristics lot various mixtures of $SF_6/CF_4$ in a test chamber and 25.8 kV GIS (Gas Insulation Switchgear) at practical pressures (0.1-04 MPa) and gap lengths (0.5 mm, 1 mm) in a test chamber. In the result, it was observed that an increase in the dielectric strength is attained through the addition of $SF_6$ to $CF_4$. It is possible to make an environment friendly gas insulation material while maintaining the dielectric strength by combing $SF_6$ and $CF_4$ which generates a lower level of the "global warming" effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.227-228
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• 2007

Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of SFJCF4 mixtures in uniform field was performed. The experiments were carried out under AC and standard lightning impulse (SLI) voltages. The sphere-sphere electrode whose gap distance was 1 mm was used in a test chamber. $SF_6/CF_4$ mixtures contained from 0 to 100% $SF_6$ and the experimental gas pressure ranged from 0.1 to 0.4 MPa. The results show that addition of $SF_6$ to $CF_4$ increase AC and SLI breakdown voltages. Under AC voltages the breakdown voltages of each mixture were linearly increased according to the quantity of $SF_6$. However under SLI voltages the breakdown voltages of each mixture were similar.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1550-1552
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• 1999

In this study, (Ba,Sr)$TiO_3$ thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) as a function $CF_4$/Ar gas mixing ratio. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1700{\AA}$/min under $CF_4/(CF_4+Ar)$ of 0.1, 600W/350V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the (Ba,Sr)$TiO_3$ etching. To analysis the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.