• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.12-16
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• 2001

We investigated the etching characteristics of $YMnO_3$ thin films in high-density plasma etching system. In this study. $YMnO_3$ thin films were etched with $CF_{4}/Ar$ gas chemistries in inductively coupled plasma (ICP). Etch rates of $YMnO_3$ were measured according to gas mixing ratios. The maximum etch rate of $YMnO_3$ is 18 nm/min at $CF_{4}/(CF_{4}+Ar)$ of 20%. In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing $CF_4$ content. Chemical states of $YMnO_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. $YF_x$, $MnF_x$ such as YF, $YF_2$, $YF_3$ and $MnF_3$ Were detected using SIMS analysis. The etch slope is about $65^{\circ}C$ and free of residues.

• Membrane Journal
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• v.22 no.3
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• pp.201-207
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• 2012

In this study, we investigated permeation of single gas ($N_2$, $O_2$, $CF_4$, and $SF_6$) through flat sheet membrane composed of PDMS (poly-dimethylsiloxane) and PEBAX (polyether block amides). Gas permeation experiment was performed with various feed pressure. Permeability was estimated using permeation flux measured by continuous-flow technique. The permeability of gases except $SF_6$ in PDMS were decreased with the upstream pressure increased. $SF_6$ is much more permeable than $CF_4$, which is due to higher critical temperature of $SF_6$. The permeability decreased in the following order: $O_2$ > $N_2$ > $SF_6$ > $CF_4$. On the other hand, the permeability of gases in PEBAX followed the order: $O_2$ > $N_2$ > $CF_4$ > $SF_6$ which are opposite of the order of kinematic diameter (${\AA}$)($SF_6$ > $CF_4$ > $N_2$ > $O_2$). The $SF_6/CF_4$ pure gas selectivity in PDMS was 2.1 at 0.7 MPa.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.265-269
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• 2000

$(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1509-1511
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• 2001

In this study, etching characteristics of polyimide(Pl) film with $O_2/CF_4$ gas mixing ratio was studied using inductively coupled plasma (ICP). The etch rate and selectivity were evaluated to chamber pressure and gas mixing ratio. High etch rate (over 8000$\AA$/min) and vertical profile were acquired in $CF_4$/($CF_4+O_2$) of 0.2. The selectivities of polyimide to PR and polyimide to $SiO_2$ were 1.15, 5.85, respectively. The profiles of polyimide film etched in $CF_4/O_2$ were measured by a scanning electron microscope (SEM) with using an aluminum hard mask pattern. The chemical states on the polyimide film surface were measured by x-ray photoelectron spectroscopy (XPS).

• Nuclear Engineering and Technology
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• v.31 no.2
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• pp.133-138
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• 1999

Research on the etching reaction of UO$_2$ with CF$_4$/O$_2$gas mixture plasma is carried out. The reaction rates are investigated as a function of CF$_4$/O$_2$ ratio, plasma power, and substrate temperature. It is found that there exists an optimum CF$_4$/O$_2$ ratio around 4:1 at all temperatures up to 37$0^{\circ}C$ and surface analysis using XPS X-ray Photoelectron Spectroscopy) confirms the result. Peak rate at the optimum gas composition increases with increasing temperature. Highest rate obtained in this study leaches 1050 monolayers/min. at 37$0^{\circ}C$ under r. f. power of 150 W, which is equivalent to about 0.5${\mu}{\textrm}{m}$/min. The rate also increases with increasing r. f. power, thus, higher power and higher substrate temperature will undoubtedly raise the etching reaction rate much further. This reaction seems to be an activated process, whose activation energy will be derived in the following experiments.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.165-166
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• 2007

In these days $SF_6$ mixtures and alternative gas have been studied because of global warming and liquefying at low temperature and high pressure. At present work the breakdown characteristics of $SF_6/CF_4$ mixture in non-uniform field was performed. The experiments were carried out under positive and negative standard lightning impulse (SLT) voltages. The point-plane electrode was used with 3 mm gap distance in the test chamber. The $SF_6/CF_4$ mixture which contain 20% of $SF_6$ was compared with pure $SF_6$ and $CF_4$ gas. Experimental gas pressure ranged from 0.1 to 0.4 MPa. The breakdown voltage under negative SLI is higher than the breakdown voltage under positive voltage. And the breakdown voltage of $SF_6$ 20%, $CF_4$ 80% mixture is similar to that of pure $SF_6$.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.11b
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• pp.506-511
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• 1996

Research on the dry etching of UO$_2$ by using fluorine containing gas plasma is carried out for DUPIC (Direct Use of spent PWR fuel In CANDU) process which is taken into consideration for potential future fuel cycle in Korea. CF$_4$/O$_2$ gas mixture is chosen for the reactant gas and the etching rates of UO$_2$ by the gas plasma are investigated as functions of substrate temperature, plasma gas pressure, CF$_4$/O$_2$ ratio, and plasma power, It is tentatively found that the etching rate can reach 1000 monolayers/min. and the optimum CF$_4$/O$_2$ ratio is around 4:1.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.4
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• pp.635-640
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• 2008

New gas mixtures are now finding applications such as interrupting media for high-voltage circuit breakers. These mixtures consist of a high content of carbon tetrafluoride($CF_4$) added to sulfur hexafluoride($SF_6$). Nowdays $SF_6$ has been established for the use in gas insulated substations due to its high insulation withstand level and good arc quenching capability. At this paper Breakdown characteristics were investigated for $SF_6/CF_4$ mixtures when AC voltage and standard lightning impulse voltage(LI) was applied in a needle-plane electrodes. And partial discharge(PD) experiments were carried out in the test chamber which was made in needle-plane electrode. And ${\Phi}$-Q-N distribution of partial discharge signals was analyzed. The total pressure of the $SF_6/CF_4$ mixtures was varied within the range of 0.1-0.5 Mpa in the test chamber. The breakdown voltage in needle-plane electrode displayed N shape characteristics for increasing the content of $SF_6$ at positive impulse voltage and the PD inception voltage was increased slightly when pressure of $SF_6/CF_4$ Mixtures was increased. Maximum PD inception voltage is showed in 80% SF6/20%$CF_4$.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1399-1401
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• 2009

In this article, we reported the results of etching polymonochloro-para-xylylene (parylene-C) thin films using inductively coupled plasma and $CF_4/O_2$ gas mixture. The $CF_4$ gas fraction increased up to the approximately 16 %, the polymer etch rate increased in the range of 277 - 373 nm/min. It confirmed that the etch rate of the parylene-C mainly depended on the O radical density in the plasma. Using a contact angle measurement, the contact angle increased with increasing the $CF_4$ fraction. Moreover, the contact angle was highly related a $CF_x$ functional group on parylene films.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.391-394
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• 2001

A new type plasma reactor is proposed to decompose CF4 diluted with N2 gas in atmospheric pressure. The arc plasmas is surrounded with a waterwall which acts as a source of water vapor, the solvent of HF, resultant product after decomposition, and conveyer to take away fluorine compound from exhaust gas. Abatement more than 99% is achieved by small size plasmas such as 1 cm in diameter, 25cm in length and 3.4KW of DC discharge power in such gas as the mixture of 100 sccm of CF4 and 15 slm of N2. Reactors of this type are to be expanded to such a system as Nitrogen flow of 50 slm with 200 sccm of CF4 and 7-8 KW discharge power.