• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.10
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• pp.1485-1490
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• 2014

$SF_6$ gas has been used for power transformers or gas insulated switchgears, because it has the superior insulation property and the stable structure chemically. It has been, however, one of global warming gases and required to reduce the its amount. Some papers have reported that its amount could be reduced by mixing with other gases, such as $N_2$, $CF_4$, $CO_2$ and $C_4F_8$ and their mixture gases would cause the synergy effect. In this paper, we investigated the characteristics of DC plasmas on $SF_6$ mixture gases with $N_2$ at atmospheric pressure. $N_2$ gas is one of cheap gases and has been reported to show the synergy effect with mixing $SF_6$ gas, even though $N_2$ plasmas have electron-positive characteristics. 38 kinds of $SF_6/N_2$ plasma particles, which consisted of an electron, two positive ions, five negative ions, 30 excitation and vibration particles, were considered in a one dimensional fluid simulation model with capacitively coupled plasma chamber. The results showed that the joule heating of $SF_6/N_2$ plasmas was mainly caused by positive ions, on the other hand electrons acted on holding the $SF_6/N_2$ plasmas stably. The joule heating was strongly generated near the electrodes, which caused the increase of neutral gas temperature within the chamber. The more $N_2$ mixed-ratio increased, the less joule heating was. And the power consumptions by electron and positive ions increased with the increase of $N_2$ mixed-ratio.

• Korean Journal of Soil Science and Fertilizer
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• v.46 no.6
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• pp.599-605
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• 2013

The effects of water-saving irrigation on the emissions of greenhouse gases and the prokaryotic communities in rice paddy soils were investigated through a field experiment. In the Water-Saving (WS) irrigation, the water layer was kept at 2~3 cm while it was kept at 6 cm in the Continuousiy Flooding (CF) irrigation. A plot was treated with Intermittently Drainage (ID) that is drained as fine cracks on the floor were seen after transplanting. GHGs emission amounts from WS plots were reduced by 78.1% compared to that from CF plot and by 70.7% compared to that from ID plot, meaning that WS could help contribute to mitigation of the greenhouse gas accumulation in the atmosphere.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.1-5
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• 2013

In this paper, we investigated the etching characteristics of the TaN thin films and the surface reaction of TaN thin films after etching process. The etching characteristics of the TaN thin films were carried out using inductively coupled plasma (ICP). The etch rate and the selectivity of TaN to $SiO_2$ and TaN to PR were measured by varying the gas mixing ratio, RF power, DC-bias voltage, and process pressure in CF-based plasma. The surface reaction of TaN thin films were determined by x-ray photoelectron spectroscopy (XPS).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.2
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• pp.66-72
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• 2020

The difference of plasma resistance between the CAS glass bulk and coating films were compared. Plasma resistance was confirmed by analyzing the etch rate and the microstructure of the surface when the CAS glass bulk and the glass coating film were etched with CF₄/O₂/Ar plasma gas. CAS glass coating film was etched up to 25 times faster than the glass bulk. A statistically high correlation between the surface roughness and the etching rate of the coating film was derived, and thus, the high surface roughness of the coating film was determined to cause rapid etching. In addition, cristobalite crystals that has a low Ca content and a high Si content, was foamed on the glass coating film. Therefore, the CAS glass coating film is considered to have low plasma resistance compared to the glass bulk.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.40-44
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• 2008

The interfacial adhesion energy between resist and a substrate is very important due to resist pull-off problems during separation of mold from a substrate in nanoimprint process. And effect of substrate surface roughness on interfacial adhesion energy is very important. In this paper, we have treated glass wafer surface using $CF_4$ gas for increase surface roughness and it has tested interfacial adhesion properties of UV resin/glass substrate interfaces by 4 point bending test. The interfacial adhesion energies by bare, 30, 60 and 90 sec surface treatments are 0.62, 1.4, 1.36 and 2 $J/m^2$, respectively. The test results showed quantitative comparisons of interfacial fracture energy (G) effect of glass wafer surface roughness.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.459-459
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• 2012

Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.490-495
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• 1999

In 0.18 $\mu \textrm m$ LOGIC device, the etch rate of NMOS polysilicons is different from that of PMOS polysilicons due to the state of polysilicon to manufacture gate line. To control the etch profile, we tested the ratio of $Cl_2$/HBr gas and the total chamber pressure, and also we reduced Back He pressure to get the vertical profile. In the case of manufacturing the gate photoresist line, we used Bottom Anti-Reflective Coating (BARC) to protect refrection of light. As a result we found that $CF_4O_2$ gas is good to etch BARC, because of high selectivity and good photoresist line profile after etching BARC. in the results of the characterization of plasma damage to the antenna effect of gate oxide, NO type thin film(growing gate oxide in 0, ambient followed by an NO anneal) is better than wet type thin film(growing gate oxide in $0_2+H_2$ ambient).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.4
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• pp.533-539
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• 2001

In this study, results from an experimental and numerical study of flow distribution in a close-coupled catalytic converter (CCC) are presented. The experiments were carried out using a glow measurement system. Flow distribution at the exit of the first monolith in the CCC was measured using a pitot tube under steady and transient flow conditions. Numerical analysis was done using a CF D code at the same test conditions, and the results were compared with the experimental results. Experimental results showed that the uniformity index of exhaust gas velocity decreases as Reynolds number increases. Under the steady flow conditions, flow through each exhaust pipe concentrates on a small region of the monolith. Under the transient flow conditions, flow through each exhaust pipe with the engine firing order interacts with each other to spread the flow over the monolith face. The numerical analysis results support the experimental results, and help explain the flow pattern in the entry region of the CCC.

• Textile Coloration and Finishing
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• v.6 no.3
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• pp.27-36
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• 1994

In order to produce a water repellent surface on polyester fabric, samples were treated in the atmosphere of $CF_4$ glow discharge plasma. The samples used in the study were ployester fabric and poyester film. The purpose of film treatment is for the comparison of hydrophobicity with fabric sample at same treatment condition. Radio frequency(13.56MHz) generator was used as electric source and its in put power is 100 Watt. Water repellency was evaluated by contact angle measurement. Result obtained are as follows. 1) Fiber interstice of original fabric was ana lysed as 0.43$\mu$m, and this value was sufficiently ideal for making water repellent fabric. 2) The most favorable setting position of substrate was the center area between two electrodes. 3) Fabric contact angle was higher than film contact angle at same treatment condition, and its difference was more than 50${\circ}$. And it was incapalbe of fabric contact angle measurement when the film contact angle was less than 90${\circ}$. because the fabric is susceptible to absorption of water by the capillary effect. 4) Fabric contact angle can not revealed the precise defferences of surface hydrophobicity, however, the film contact angle showed the real hydrophobic nature. 5) It was not sufficient method to evaluate the hydrophobicity of fabric surface by merely measure of the water contact angle. 6) It showed high water repellent nature at 0.06 torr of $CF_4$ plasma gas pressure and duration of 45 seconds treatment, and it can not be anticipated more improved nature if the pressure and duration of treatment time were increased.

• Journal of Microbiology and Biotechnology
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• v.21 no.9
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• pp.893-902
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• 2011

Endophytic fungi are little known for their role in gibberellins (GAs) synthesis and abiotic stress resistance in crop plants. We isolated 10 endophytes from the roots of field-grown soybean and screened their culture filtrates (CF) on the GAs biosynthesis mutant rice line - Waito-C. CF bioassay showed that endophyte GMH-1B significantly promoted the growth of Waito-C compared with controls. GMH-1B was identified as Penicillium minioluteum LHL09 on the basis of ITS regions rDNA sequence homology and phylogenetic analyses. GC/MS-SIM analysis of CF of P. minioluteum revealed the presence of bioactive $GA_4$ and $GA_7$. In endophyte-soybean plant interaction, P. minioluteum association significantly promoted growth characteristics (shoot length, shoot fresh and dry biomasses, chlorophyll content, and leaf area) and nitrogen assimilation, with and without sodium chloride (NaCl)-induced salinity (70 and 140 mM) stress, as compared with control. Field-emission scanning electron microcopy showed active colonization of endophyte with host plants before and after stress treatments. In response to salinity stress, low endogenous abscisic acid and high salicylic acid accumulation in endophyte-associated plants elucidated the stress mitigation by P. minioluteum. The endophytic fungal symbiosis of P. minioluteum also increased the daidzein and genistein contents in the soybean as compared with control plants, under salt stress. Thus, P. minioluteum ameliorated the adverse effects of abiotic salinity stress and rescued soybean plant growth by influencing biosynthesis of the plant's hormones and flavonoids.