• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.84-91
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• 1994

A compact electron cyclotron resonance(ECR) plasma system composed of a microwave generator and a magnet coil was fabricated. A Langmuir single probe was used to investigate the plasma characteristics of the system through I-V measurements. The performance of the compact ECR plasma system was tested for the case of silicon etching reaction with $CF_{4}/O_{2}$(30%) mixed gas. Electron density and etch rate increased to maximum values and then decreased with increasing argon gas pressure, but electron temperature changed in the opposite way. The electron density and the electron temperature of argon gas plasma were 0.85${\times}~5.5{\times}10^{10}cm^{-3}$ and 4.5~6.0 eV, respectively, in the pressure range from $3{\times}10^{4}$ to 0.05Torr. The etch rate reached a maximum value at the position of 2.5cm from the bottom of plasma cavity. Etch rate uniformity was $\pm$6% across 6cm wafer. Anisotropic index was 0.75 at 1.5${\times}10^{-4}$Torr.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.06a
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• pp.32-42
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• 2004

Recently, plasma surface-cleaning or surface-etching techniques have been focused in respect of the decontamination of spent or used nuclear parts and equipment. In this study the removal rate of metallic cobalt surface is experimentally investigated via its surface etching rate with a $CF_4-o_2$mixed gas plasma. Experimental results reveal that a mixed etchant gas with about 80% $CF_4$-20% $O_2$ (molar) gives the highest reaction rate and the rate reaches 0.06 ${\mu}m$/min at $380^{\circ}C$ and ion-assisted etching dramatically enhances the surface reaction rate. With a negative 300 V DC bias voltage applied to the substrate, the surface reaction initiation temperature lowers and the rate increases about 20 times at $350^{\circ}C$ and up to 0.43 ${\mu}m$/min at $380^{\circ}C$, respectively. Surface morphology analysis confirms the etching rate measurements. Auger spectrum analysis clearly shows the adsorption of fluorine atoms on the reacted surface. From the current experimental findings and the results discussed in previous studies, mechanistic understanding of the surface reaction, fluorination and/or fluoro-carbonylation reaction, is provided.

• Journal of the Korean institute of surface engineering
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• v.44 no.2
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• pp.50-54
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• 2011

Hydrophobic a-C:F film was coated on polycarbonate film with $CF_4$, $C_2F_6$ and HFC ($C_2F_4H_2$) gas in helium discharge generated by 5~100 kHz AC power supply at atmospheric pressure and room temperature. The highest water contact angle of the a-C:F film formed with $He/C_2F_6$ mixed gas is $155^{\circ}$. X-ray photoelectron spectrum showed that there was 40% of C-$CF_3$ bond at the surface of the super hydrophobic film. The contact angle and deposition rate were decreased with increasing substrate temperature. The contact angle was generally increased with the surface roughness of the film. The contact angle was high when the surface microstructure of the film was fine and sharp at the similar roughness and chemical composition of the surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.301-301
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• 2010

In order to enhance the efficiency of the organic solar cells, the effects of plasma surface treatment with using $CF_4$ and $O_2$ gas on the anode ITO were studied. The polymer solar cell devices were fabricated on ITO glasses an active layer of P3HT (poly-3-hexylthiophene) and PCBM ([6,6]-phenyl C61-butyric acid methyl ester) mixture, without anode buffer layer, such as PEDOT:PSS layer. The metallic electrode was formed by thermally evaporated Al. Before the coating of organic layers, ITO surface was exposed to plasma made of $CF_4$ and $O_2$ gas, with/without heat treatment. In order to identify the effect the surface treatment, the current density and voltage characteristics were measured by solar simulator and the chemical composition of plasma treated ITO surface was analyzed by using X-ray photoelectron spectroscopy(XPS). In addition, the work function of the plasma treated ITO surface was measured by using ultraviolet photoelectron spectroscopy(UPS). The effects of plasma surface treatment can be attributed to the removal organic contaminants of the ITO surface, to the improvement of contact between ITO and buffer layer, and to the increase of work function of the ITO.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.47-51
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• 2007

F-doped SiOC : H thin films with low refractive index were deposited on Si wafer and glass substrate by plasma enhanced chemical vapor deposition (PECVD) as a function of rf powers, substrate temperatures, gas rates and their composition flow ratios ($SiH_4,\;CF_4$ and $N_2O$). The refractive index of the F-doped SiOC : H film continuously decreased with increasing deposition temperature and rf power. As $N_2O$ gas flow rate decreased, the refractive index of the deposited films decreased down to 1.3778, reaching a minimum value at rf power of 180W and $100^{\circ}C$ without $N_2O$ gas. The fluorine content of F-doped SiOC : H film increased from 1.9 at% to 2.4 at% as the rf power was increased from 60 W to 180 W, which results in the decrease of refractive index.

• Membrane Journal
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• v.17 no.4
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• pp.345-351
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• 2007

In this research, by using the fluorine gas, the poly(ether sulfone) (PES), the polysulfone (PSf), and the poly-vinylidenefluoride (PVDF) membranes were modified to improve the performance of the optional Gas-Liquid Contactor The SEM, surface contact angle, XPS, and the water transmission minimum pressure test was performed in order to examine the characteristics of which is surface modified. As a result of looking into the surface morphology of from the SEM measurement, we could know that the roughness of the membrane surface increased as the fluorine processing time increased. $-CH_2$, and the perfluoro group of $-CH_3$ were chemically combined with the surface fluorine conversion film surface and the hydrophobicity was exposed to be increased. Moreover, we could know that as the surface fluorinated processing time increased from the surface contact angle and water transmission minimum pressure test, the measured value increased and the overall characteristics were improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.375-380
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• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• Progress in Superconductivity and Cryogenics
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• v.14 no.4
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• pp.20-23
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• 2012

Superconducting equipment has been actively investigated for securing the environment and energy technology (ET) in various parts of the world. Despite these movements, a high voltage cryogenic bushing, which plays an important role of interconnection between the electric power systems and superconducting devices, has not been fully developed due to severe insulation requirements. A gas insulated cryogenic bushing has been investigated as one of our projects since 2010. As a basic step to obtain the design parameters for cryogenic bushing, we focused on the surface flashover characteristics of glass fiber reinforced plastic (FRP) in several insulation gases. For the surface flashover tests, several insulation gases including $SF_6$, $CF_4$ and $N_2$ gas were prepared. Various length of FRP specimens were fabricated in order to obtain the fundamental data for creepage distance of FRP. The first specimen group was from 2 mm to 10 mm with 2 mm intervals and the second specimen group was from 20 mm to 100 mm with 20 mm intervals. And the gas pressure was varied from 1 bar to 4 bar. An AC overvoltage test and a lightning impulse test were performed. Then the experimental results of surface flashover were obtained and analyzed. Based on these results, it would be possible to design the optimum creepage distance of FRP in a cryogenic bushing.

• Journal of Microbiology and Biotechnology
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• v.20 no.12
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• pp.1744-1749
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• 2010

The role of endophytic fungi in plant growth and development is well documented. However, endophytic fungi with growth promotion capacity have never been isolated from weeds previously. In the current study, we isolated 8 fungal endophytes from the roots of Monochoria vaginalis, a serious weed of rice paddy in Korea. These isolates were screened on Waito-C, in order to identify plant growth promoting metabolites. Two fungal isolates (M5.A & M1.5) significantly promoted the plant height and shoot length of Waito-C during preliminary screening experiments. The culture filtrates (CFs) of M5.A and M1.5 also promoted the shoot length of Echinocloa crusgalli. Gibberellins (GAs) analysis of the CFs of M5.A and M1.5 showed that these endophytic fungi secrete higher quantities of GAs as compared with wild-type G. fujikuroi KCCM12329. The CF of M5.A contained bioactive GAs ($GA_3$, 2.8 ng/ml; $GA_4$, 2.6 ng/ml, and $GA_7$, 6.68 ng/ml) in conjunction with physiologically inactive $GA_9$ (1.61 ng/ml) and $GA_{24}$ (0.18 ng/ml). The CF of M1.5 contained physiologically active GAs ($GA_3$, 1.64 ng/ml; $GA_4$, 1.37 ng/ml and $GA_7$, 6.29 ng/ml) in conjunction with physiologically inactive $GA_9$ (3.44 ng/ml), $GA_{12}$ (0.3 ng/ml), and $GA_{24}$ (0.59 ng/ml). M5.A and M1.5 were identified as new strains of Penicillium sp. and Aspergillus sp., respectively, based on their 18S rDNA sequence homology and phylogenetic analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.695-699
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• 2001

Cerium dioxide (CeO$_2$) was used as the intermediate layer between the ferroelectric thin film and Si substrate in a metal-ferroelectric-semiconductor field effect transistor (MFSFET), to improve the interface property by preventing the interdiffusion of the ferroelectric material and the Si substrate. In this study, CeO$_2$ thin films were etched with a CF$_4$/Ar gas combination in inductively coupled plasma (ICP). The maximum etch rate of CeO$_2$ thin films was 270$\AA$/min under CF$_4$/(CF$_4$+Ar) of 0.2, 600 W/-200V, 15 mTorr, and $25^{\circ}C$. The selectivities of CeO$_2$ to PR and SBT were 0.21, 0.25, respectively. The surface reaction in the etching of CeO$_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F. Compounds such as Ce-F$_{x}$ remains on the surface of CeO$_2$ thin films. Those products can be removed by Ar ion bombardment. The results of secondary ion mass spectrometry (SIMS) were consistent with those of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of CeO$_2$ thin films. The etch profile of over-etched CeO$_2$ films with the 0.5${\mu}{\textrm}{m}$ line was approximately 65$^{\circ}$.>.