• Bulletin of the Korean Chemical Society
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• 제27권3호
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• pp.373-375
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• 2006

$CF_4$ gas is one of the most common chemicals used for dry etching in semiconductor manufacturing processes. For application to the etching process and environmental control, the low-pressure inductively coupled plasma (LP-ICP) was employed to obtain the spectrum of $CF_4$ gas. In terms of the analysis of the spectra, trace CF radical by A-X and B-X transitions was detected. The other $CF_x$ radicals, such as $CF_2$ and $CF_3$, were not seen in this experiment whereas strong C and $C_2$ emissions, dissociation products of $CF_4$ gas, were observed.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1016-1020
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• 2002

Ru thin films were etched using CF/$_4$O$_2$ plasma in an ICP (inductively coupled plasma etching) system. The maximum etch rate of Ru thin films was 168 nm/min at a CF$_4$/O$_2$ gas mixing ratio of 10 %. The selectivity of SiO$_2$ over Ru was 1.3. From the OES (optical emission spectroscopy) analysis, the optical emission intensity of the O radical had a maximum value at 10% CF$_4$ gas concentration and drcrease with further addition of CF4 gas, but etch slope was enhanced. From XPS (x-ray photoelectron spectroscopy) analysis, the surface of the etched Ru thin film in CF$_4$/O$_2$ chemistry shows Ru-F bonds by the chemical reaction of Ru and F. RuF$_{x}$ compounds were suggested as a surface passivation layer that reduces the chemical reactions between Ru and O radicals. From a FE-SEM (field emission scanning electron microscope) micrograph, we had an almost perpendicular taper angle of 89$^{\circ}$.>.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.74-77
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• 2002

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1252-1257
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• 2004

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients by using two-term approximation of Boltzmann equation. But there is difference between the result of the two-term approximation of the Boltzmann equation and experiments in pure CF$_4$ molecular gas and in CF$_4$+Ar gas mixture. Therefore, In this paper, we calculated the electron drift velocity (W) in pure CF$_4$ molecular gas and CF$_4$+Ar gas mixture (1 %, 5 %, 10 %) for range of E/N values from 0.17～300 Td at the temperature was 300 K and pressure was 1 Torr by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation have been compared with each other for a range of E/N.

• 공업화학
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• 제22권1호
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• pp.31-36
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• 2011

사불화탄소($CF_4$)는 반도체 제조공정에서 플라즈마 에칭과 화학기상증착(CVD)에서 사용되어온 가스이다. $CF_4$는 적외선을 강하게 흡수하고 대기 중 잔류시간이 길어서 지구온난화에 영향을 미치기 때문에 고효율의 분해가 필요하다. 본 연구에서는 플라즈마와 워터젯을 결합하여 방전영역을 증가시키고 다량의 OH 라디칼을 생성시켜 $CF_4$를 고효율로 분해할 수 있는 워터젯 글라이딩 아크 플라즈마 시스템을 개발하였다. 실험 변수로 전극 형태, 전극 각도, 가스 노즐직경, 전극 간격과 전극 길이를 취하였다. 변수실험을 통하여 Arc 형태의 전극에서 전극 각도가 $20^{\circ}$, 가스 노즐 직경이 3 mm, 전극 간격이 3 mm, 전극 길이가 120 mm일 때 $CF_4$ 분해율은 최고 93.4%까지 도달하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.628-631
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• 2004

A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.

• 전기학회논문지
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• 제57권2호
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• pp.245-251
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• 2008

Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of $SF_6/CF_4$ mixtures in non-uniform field was performed. The experiments were carried out under AC voltage and standard lightning impulse(SLI) voltage. Breakdown characteristics were investigated for $SF_6/CF_4$ mixtures when AC voltages and standard lighting impulse voltage was applied in a needle-plane. The needle-plane electrode whose gap distance was 3 mm were used in a test chamber. $SF_6/CF_4$ mixtures contained from 0 to 100% $SF_6$ and the experimental gas pressure ranged from 0.1 to 0.5 MPa. The breakdown characteristics of $SF_6/CF_4$ mixtures in non-uniform field may be influenced by defects like needle-shaped protrusions. In case of slowly rising SLI voltage and AC voltage it is enhanced by corona-stabilization. This phenomena caused by the ion drift during streamer development and the resulting space-charge is investigated. In non-uniform field under negative SLI voltage the breakdown voltage was increase linearly but under positive SLI voltage the breakdown voltage increase non-linearly. The breakdown voltage in needle-plane electrode displayed N shape characteristics for increasing the content of $SF_6$ at AC voltage. $SF_6/CF_4$ mixture has good dielectric strength and arc-extinguishing properties than pure SF6. This paper presents experimental results on breakdown characteristics for various mixtures of $SF_6/CF_4$ at practical pressures. We could make an environment friendly gas insulation material with maintaining dielectric strength by combing $SF_6\;and\;CF_4$ which generates a lower lever of the global warming effect.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1334-1335
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• 2008

Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of $SF_6/CF_4$ mixtures in uniform and nonuniform field was performed. The experiments were carried out under AC voltages. The sphere-sphere electrode whose gap distance was 1 mm was used and the point-plane electrode whose gap distance was 3 mm was used in a test chamber. $SF_6/CF_4$ mixture contained 20% $SF_6$ and 80% $CF_4$ and the experimental gas pressure ranged from 0.1 to 0.5 MPa. The results show that addition of $SF_6/CF_4$ mixtures increase AC breakdown voltages. In uniform field the breakdown voltages of gas were linearly increased according to the pressure. However in nonuniform field the breakdown voltages of gas were increased nonlinearly.

• 한국진공학회지
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• 제7권4호
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• pp.374-380
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• 1998

글로벌 모델을 사용하여 $CF_4$ 플라즈마 내부에서의 각 중성 및 이온 라디칼 밀도를 계산하였다. 중성 입자로서는 플루오린 원자가 가장 많고, 높은 입력 전력 조건의 경우 CF 나 $CF^+$와 같은 저 분자 해리종이 주종을 이룬다. 압력이 증가 할수록 하전 입자의 밀도는 증가하나 전자 온도의 감소로 이온화율은 감소한다. 공급 가스인 $CF_4$의 해리율은 압력에 따 라 증가한후 다시 감소하는 양상을 보인다. 전자 온도 및 밀도는 입력유량에 대해서 거의 변화가 없다. $CF_4$의 해리율은 유량 증가에 따라 선형적으로 감소하며 이는 $CF_3$의 증가와 CF의 감소로 이어진다. 식각 실험 결과와의 비교를 통해 플루오로 카본 이온종 및 높은 C/F비를 갖는 중성 라디칼의 상대적 밀도 증가가 $SiO_2$/Si식각 선택도 향상에 주요함을 알 수 있다.

• 멤브레인
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• 제21권1호
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• pp.22-29
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• 2011

중전기의 유지 보수 및 교체 과정에서 절연체로 사용된 $SF_6$ 가스는 교체 충전과 정제과정에서 유입되는 공기와의 아크 방전에 의해 많은 종류의 부산물($N_2$, $O_2$, $CF_4$, $SO_2$, $H_2O$, HF, $SOF_2$, $CuF_2$, $WO_3$ 등)이 발생된다. 부산물 중에서도 대부분을 차지하는 것이 $N_2$, $O_2$, $CF_4$이며, $SF_6$가스를 재사용하기 위해서는 이들을 효과적으로 분리 회수하는 공정이 필요하다. 주요 부산물인 $N_2$, $O_2$, $CF_4$와의 분리 효율 측면에서 분리막법은 기존의 흡착, 심냉법에 비하여 상대적으로 높은 효율을 보이고 있어 이에 대한 관심 또한 증가하고 있다. 따라서 본 논문에서는 중전기 산업에서 발생되는 $SF_6$ 가스 함유 농도 90 vol% 이상의 가스에 대하여 분리막법을 적용하여 $N_2$, $O_2$, $CF_4$와 $SF_6$ 가스의 온도와 배출유량의 변화에 따른 분리 회수 가능성을 관찰하였다. PSF와 PC 중공사 분리막을 이용하여 고농도 $SF_6$에 대한 분리 회수 실험 결과, PSF 분리막의 최대 회수율은 압력 0.3 MPa, 온도 $25^{\circ}C$, 배출유량 150 cc/min에서 92.7%를 나타내었으며, PC 분리막에서는 압력 0.3 MPa, 온도 $45^{\circ}C$, 배출유량 150 cc/min 일 때 74.8%의 최대 회수율을 나타내었다. 또한, 사용된 두 가지 분리막과 운전 조건에서 주요 부산물인 $N_2$, $O_2$, $CF_4$의 최대 제거율은 각각 약 80%, 74%, 그리고 58.9%가 관찰되었다. 이로부터 분리막 공정은 고농도 폐 $SF_6$ 가스에서 주요 부산물로부터 $SF_6$의 효과적인 분리 및 회수가 가능한 공정으로 적용할 수 있는 가능성을 파악 할 수 있었다.