• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.102.1-102.1
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• 2015

플라즈마를 이용한 건식식각공정은 식각하고자 하는 기판과 더불어 챔버 내부를 구성하고 있는 부품들이 플라즈마에 함께 노출되는 환경이다. 챔버 내부가 장시간 플라즈마에 노출되어 열화 되면 기판의 불량을 야기하는 오염입자의 발생이 증가하므로 양산 공정에서는 그 때마다 내부 부품을 교체하여 청정한 공정 환경을 유지시킨다. 공정 챔버의 내부 부품은 플라즈마로 인한 열화를 방지하기 위하여 내플라즈마성이 우수하다고 알려진 코팅처리를 하여 사용한다. 금까지 플라즈마 식각 공정에 관한 연구는 식각하고자 하는 기판관점에서 활발히 이루어져 왔으나 내플라즈마성 코팅소재 관점에서의 연구 보고는 미미한 실정이다. 본 연구에서는 장시간의 양산공정을 모사하는 가혹한 플라즈마 조건에서 $CF_4/O_2$ 혼합가스를 사용하여 AAO (Anodic Aluminum oxide)피막의 오염입자 특성을 실시간 모니터링 하는 동시에 OES 분석을 수행하여 내플라즈마성 코팅소재의 오염입자 발생 메커니즘에 대하여 분석하였다.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.551-556
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• 2001

In this work, the recovery of etching damage in the etched PZT thin film with $O_2$ annealing has been studied. The PZT thin films were etched as a function of Cl$_2$/Ar and additive CF$_4$ into Cl$_2$(80%) /Ar(20%). the etch rates of PZT thin films were 1600$\AA$/min at Cl$_2$(80%)/Ar(20%) and 1970 $\AA$/min at 30% additive Cf$_4$ into Cl$_2$(80%)/Ar(20%). In order to recover the characteristics of etched PZT thin films, the etched PZT thin films were annealed in $O_2$ atmosphere at various temperatures. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ annealing process. The improvement of ferroelectric behavior is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensities of Pb-O, Zr-O and Ti-O peak increase and the chemical residue peak is reduced by $O_2$ annealing. From the atomic force microscopy (AFM) images. it shows that the surface morphology of re-annealed PZT thin films after etching is improved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.16-19
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• 2002

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

• 대한한의학방제학회지
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• 제28권3호
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• pp.255-269
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• 2020

Objectives : Hemistepta lyrata Bunge (Bunge) is a wild herb that has been used for managing fever and wound in Korean Traditional Medicine. The present study explored the effects of H. lyrata extract on liver X receptor (LXR) α-dependent lipogenic genes in hepatocyte-derived cells. Methods : After HepG2 cells or Huh7 cells were pre-treated with 1-10 ㎍/mL of H. lyrata extract or its fractionated extract for 0.5 h, the cells were subsequently exposed to LXR ligand for 6-24 h. Cell viability, LXR response element (LXRE)-driven luciferase activity, sterol regulatory element binding protein-response element (SREBP-RE)-driven luciferase activity, SREBP-1c expression, and mRNA levels of LXRα and its-dependent target genes were determined. In addition, LC-MS/MS analysis was conducted to explore major compounds in H. lyrata-chloroform fractionated extract #4 (HL-CF4). Results : Of various H. lyrata extracts tested, chloroform extract and its fractionated extract #4, HL-CF4, significantly decreased T0901317-mediated SREBP-1c expression. In addition, HL-CF4 significantly reduced LXRE atransactivation and LXRα mRNA expression without any cytotoxicity. Moreover, HL-CF4 prevented the SREBP-RE-driven luciferase activity and mRNA levels of fatty acid synthase and stearoyl-CoA desaturase-1 induced by T0901317. Results from LC-MS/MS analysis at positive/negative mode indicated that HL-CF4 contained several compounds showing m/z 197.1176 (C₁₁H₁₇O₃), 693.2913/227.1069 (C₃₈H₄₅O₁₂/C₁₅H₁₅O₂), 203.1797 (C₁₅H₂₃), 181.1225 (C₁₁H₁₇O₂), 591.2957 (C₃₅H₄₃O₈), 379.1040 (C₁₈H₁₉O₉), 409.1509 (C₂₀H₂₅O₉), 309.1348 (C₁₆H₂₁O₆), 391.1404 (C₂₀H₂₃O₈), and 669.2924/389.1248 (C₃₆H₄₅O₁₂/C₂₀H₂₁O₈). Conclusion : Based on its inhibition of the LXRα-dependent signaling pathway, H. lyrata chloroform extract and HL-CF4 have prophylactic potentials for managing non-alcoholic fatty liver.

• 한국결정성장학회지
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• 제21권4호
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• pp.164-168
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• 2011

고이온밀도 플라즈마 식각에 의한 고종횡비, 고이방성을 갖는 ZnO, $SnO_2$ 나노 구조 가스 감응층 형성을 위하여 mask 재료들과의 식각 선택도를 조사하였다. $25BCl_3$/10Ar ICP 플라즈마에서는 ZnO와 Ni 간 5.1~6.1 범위의 식각 선택도가 확보된 반면에 Al의 경우 효율적인 식각 선택도를 확보할 수 없었다. $25CF_4$/10Ar ICP 플라즈마에서는 ZnO와 Ni 간에 7~17 범위의 높은 식각 선택도를 얻을 수 있었다. $SnO_2$는 $SnF_x$ 식각 생성물의 높은 휘발성에 기인하여 Ni에 비해 매우 높은 식각 속도를 나타내었고, 최고치 약 67의 매우 높은 식각 선택도를 확보하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.197-200
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• 2001

Novel Enhanced Inductively Coupled Plasma is applied to etch $SiO_2$. Effect of $O_2$ or Ar addition to $C_{4}F_{8}$ gas is monitored by Optical Emission Spectroscopy and Quadrupole Mass Spectrometer. It is fund that Ar or $O_2$ dilution to $C_{4}F_{8}$ increases F emission intensity and decreases $CF_2$ intensity. However, the ac frequency to the Helmholtz coil decreases the F intensity and thus increases $CF_2$/F ratio. By adjusting the ac frequency, the optimum etch rate and PR to $SiO_2$ selectivity can be obtained in E-lCP.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1553-1555
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• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.460-464
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• 2003

The barium strontium titannate ((Ba,Sr)TiO$_3$:BST) thin films were etched in an inductively coupled plasma (ICP) as a function of CF$_4$/Ar gas mixing ratio. Under CF$_4$(20%)/Ar(80%), the maximum etch rate of the BST films was 400 $\AA$/min. Etching products were redeposited on the surface of BST and then the nature of crystallinity were varied. Therefore, we investigated the etched surface of BST by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The plasma damages were evaluated in terms of leakage current density by Agilent 4145C and dielectric constant by HP 4192 impedance analyzer. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. After annealing at 600 $^{\circ}C$ for 10 min in $O_2$ ambient, the leakage current density, roughness and nonvolatile etch byproducts reduced. From this results, the plasma induced damages were recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.298-301
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• 2000

We investigated the etch rate of SiO$_2$ in E-ICP, ICP system and the addition gas (O$_2$H$_2$) effect on SiO$_2$ etch characteristics. In all conditions, E-ICP shows higher etch rate than ICP. Small amount of O$_2$ addition increase F atom and O$\^$*/ concentration. at optimized condition (30％ O$_2$ in CF$_4$, 70Hz) E-ICP system shows highest etch rate (about 6000${\AA}$). H$_2$addition in CF$_4$ Plasma make abrupt decrease Si etch rate and moderate decrease SiO$_2$ etch rate.

• 한국토양비료학회지
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• 제37권3호
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• pp.149-155
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• 2004

벼 양파 작부체계를 갖는 평택통의 미사질 식양토에서 화학비료의 시용량 절감을 목적으로 돈분뇨액비의 활용 가능성을 검토하였다. 벼 재배지에 사용된 액비는 $N\;3.8g\;kg^{-1}$, $P_2O_5\;1.8g\;kg^{-1}$, $K_2O\;2.7g\;kg^{-1}$을 함유하였고 양파 재배지에 사용된 액비는 $N\;4.9g\;kg^{-1}$, $P_2O_5\;1.4g\;kg^{-1}$, $K_2O\;2.1g\;kg^{-1}$을 함유하였다. 토양 pH는 모든 처리구에서 벼 수확 후 0.2-0.3 정도 상승하였다. 벼 생육과 수량은 화학비료구와 돈분뇨액비 시용구 간에 유의적인 차이가 없었다. 돈분뇨액비를 전량 기비로 시용하였을 때 양파의 중 후기 생육이 불량하였으나 액비기비 + 화학비료추비구와 화학비료구에서의 생육 차이는 없었다. 액비기비 + 화학비료추비구에서 수확기 양파의 양분흡수량는 화학비료표준시비구와 유의적인 차이가 없었다. 양파 수량은 앞그루 벼의 재배 시 화학비료를 시용한 조건에서 액비기비 및 화학비료추비 처리한 구에서 $58.5Mg\;ha^{-1}$로 가장 많았으나 액비전량기비구와 무비구를 제외한 다른 처리구와의 유의적인 차이는 없었다. 이상의 결과를 볼 때 벼 양파 작부체계에서 돈분뇨액비를 활용할 경우 벼 재배 시에는 화학비료를 전량 절감할 수 있었으나 양파는 수량성을 유지하기 위해 돈분뇨액비를 기비기준량으로 시용하고 월동 후 화학비료의 추비가 필요하였다.