• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.13-17
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• 2004

The PZT thin films are well-known material that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by $CF_4/(Cl_2+Ar)$ plasma and investigated improvement in etching damage by $O_2$ annealing. PZT thin films were etched for 1 min in an ICP using a gas mixture of $Cl_2$(80%)/Ar (20%) with 30% $CF_4$ addition. The etching conditions were fixed at a substrate temperature of $30^{\circ}C$, an rf power of 700 W, a dc-bias voltage of -200 V and a chamber pressure of 2 Pa. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in $O_2$ atmosphere. After $O_2$ annealing, the remanent polarization, fatigue, and the leakage current were gradually recovered to the characteristics of the as-deposited film, according as the temperature increased.

• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.449-453
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• 2003

Ferroelectric YMnO$_3$ thin films were etched with Ar/Cl$_2$ and CF$_4$/Cl$_2$ inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin film was 300 $\AA$/min at a Ar/Cl$_2$ gas mixing ratio of 2/8, a RF power of 800 W, a DE bias of 200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 30 $^{\circ}C$. From the X-ray photoelectron spectroscopy (XPS) analysis, yttrium etched by chemical reactions with Cl radicals assisted by Ar ion bombardments in Ar/Cl$_2$ plasma. In CF$_4$/Cl$_2$ plasma, yttrium are remained on the etched surface of YMnO$_3$ and formed of nonvolatile YF$_{x}$ compounds manganese etched effectively by chemical reactions with Cl and F radicals. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the YMnO$_3$ thin film etched in Ar/Cl$_2$ plasma shows lower value than that in CF$_4$/Cl$_2$ plasma. It indicates that the crystallinty of YMnO$_3$ thin film is more easily damaged by the Ar ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.s.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1512-1514
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• 2001

In this work, PZT thin films were etched as a function of $Cl_2$/Ar and additive $CF_4$ into $Cl_2$(80%)/Ar(20%). The etch rates of PZT films were 1600 $\AA$/min at $Cl_2$(80%)/Ar(20%) gas mixing ratio and 1973 $\AA$/min at 30% additive $CF_4$ into $Cl_2$(80%)/Ar(20%). Therefore the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. From XPS and SIMS analysis, metal halides and C-O, FCI and $CClF_2$ were detected. The etching of PZT films in Cl-based plasma is primarily chemically assisted ion etching and the remove of nonvolatile etch byproducts is the dominant step. Consequently, we suggest that the increase of Cl radicals and the volatile oxy-compound such as $CO_y$ are made by adding $CF_4$ into $Cl_2$/Ar plasma. Therefore, the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. The etched profile of PZT films was obtained above 70$^{\circ}$ by the SEM micrograph.

• Weed & Turfgrass Science
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• 제3권4호
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• pp.362-369
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• 2014

개량SCB저농도액비(DSCB)를 친환경적인 잔디관리에 이용하기 위하여 시비간격에 따른 켄터키블루그래스의 엽색지수, 엽록소지수, 잔디생육, 양분흡수 및 이용율을 바탕으로 DSCB의 적절한 시비방법을 평가하였다. 시험을 위한 처리구는 무처리(NF), 대조구(CF), 15일 간격으로 시비한 DSCB 처리구 (DSCB), 30일 간격으로 시비한 DSCB처리구(2DSCB), 4월부터 60일 간격으로 시비한 DSCB처리구(4DSCB-1), 그리고 5월부터 60일 간격으로 시비한 DSCB처리구(4DSCB-2)으로 구분하였다. 잔디의 엽색지수는 DSCB와 2DSCB가 CF보다 높았고, 엽록소지수는 CF와 비슷하였다. 질소와 칼리의 흡수량 및 이용율과 예지물량은 2DSCB와 4DSCB에서 CF보다 증가하였다. 이러한 결과들로 종합할 때, DSCB는 월 1회 시비하는 것이 잔디의 양분흡수와 이용을 증가시켜 잔디생육과 품질을 향상시키는 것으로 알 수 있었다.

• 한국결정성장학회지
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• 제10권3호
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• pp.264-270
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• 2000

소결광을 구성하는 광물상(hematite, magnetite, calcium ferrite, slag)들을 X선 내부표준법을 이용하여 정량분석을 하였다. 분석에는 표준물질로 NaF와 SiO$_2$를 선택하여 교정곡선을 작성하여 내부표준법에 적용하였다. 소결광내에 존재하는 calcium ferrite는 순수 CF(CaO.$Fe_2$$O_3$에 X선 회절피크는 나타나지 않았으며, 순수 $CF_2(CaO.$2Fe_2$$O_3$)에 근접하였으나 CF2에 소량의 $Al_2$$O_3$와 $SiO_2$가 고용된 4원계($Fe_2$$O_3$-CaO-$AI_2$$O_3$-$SiO_2$)에 보다 더 근접한 것으로 나타났다. 합성소결광의 정량분석은 두 표준물질 모두 상대오차가 $\pm$5 wt% 내에서 일치하였다. 실제 소결광의 정량분석결과 hematite는 27~40 wt%, magnetite는 20~30 wt%, calcium ferrite 22~33 wt%, slag 10~20 wt% 범위에서 분포하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.159-162
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• 2002

Ferroelectric $YMnO_{3}$ thin films were etched with $Ar/Cl_{2}$ and $CF_{4}/Cl_{2}$ inductivly coupled plasma (ICP). The maximum etch rate of $YMnO_{3}$ thin film was $300{\AA}/min$ at a $Ar/Cl_{2}$ gas mixing ratio of 2/8, a RF power of 800 W, a dc bias of 200 V, a chamber pressure of 15 mTorr, and a substrate temperature of ${30^{\circ}C}$. From the X-ray photoelectron spectroscopy (XPS) analysis ， yttrium not only etched by chemical reactions with Cl radicals, but also assisted by Ar ion bombardments in $Ar/Cl_{2}$ plasma. In $CF_{4}/Cl_{2}$ plasma, yttrium are remained on the etched surface of $YMnO_{3}$ and formed of nonvolatile YFx compounds Manganese etched effectively by chemical reactions with Cl and F radicals. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the $YMnO_{3}$ thin film etched in $Ar/Cl_{2}$ plasma shows lower value than that in $CF_{4}/Cl_{2}$ plasma. It is indicates that the crystallinty of $YMnO_{3}$ thin film is more easily damaged by the Ar ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.

• 한국염색가공학회지
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• 제4권2호
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• pp.76-83
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• 1992

Wool tropical and nylon taffeta were treated with low temperature plasma of $O_2$, $N_2$, NH$_3$, CF$_4$ and CH$_4$ for the intervals of 10 to 300 sec, and then dyed with leveling and milling type acid dyes in presence or absence of buffer solution. From the color depth of dyed fabrics, effect of plasma gases, treated time, dyeing time and temperature on dyeing property was studied. The results of the experiment can be summarized as follows: 1) The plasma treatments except methane gas increased the color depth of dyed wool fabrics, but not that of dyed nylon fabrics regardless of the plasma gases used. 2) The color depth of wool fabrics dyed in the dye bath without buffer solution was increased by the low temperature plasma, especially increased much more by CF$_4$ plasma treatment. It is found that with the identification of F- ion in the residual dye bath the hydrogen fluoride gas was adsorbed on wool fabrics in the plasma treatment. 3) The color depth of wool fabrics was increased with the time of $O_2$ and CF$_4$ plasma treatments. 4) In both cases of the leveling and milling type acid dyes, the rate of dyeing was increased in the low temperature plasma treatments, and it is found that the leveling type acid dye increased the color depth at relatively low temperature below 4$0^{\circ}C$, compared with the milling type acid dye.

• 멤브레인
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• 제21권3호
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• pp.256-262
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• 2011

저농도의 $SF_6$를 포함하고 있는 기체 혼합물(10% $SF_6$/70% $N_2$/19% $O_2$/1% $CF_4$)로부터 $SF_6$를 분리 및 회수하기 위한 PSF막과 PC막의 성능에 대하여 연구하였다. 회수된 기체 내의 $SF_6$의 농도와 회수율 그리고 혼합기체($N_2/SF_6$, $O_2/SF_6$, $CF_4/SF_6$)의 선택도는 배출 유량과 온도의 함수로 측정하였다. PSF막과 PC막 모두 회수된 기체 내의 $SF_6$ 농도는 배출 유량이 증가하면서 감소하였으며 온도가 증가함에 따라 증가하였다. 동일한 실험조건에서는 PSF막에서 회수된 기체 내의 $SF_6$의 농도가 PC막에서보다 높게 나타났다. 최대회수율은 298.15 K과 배출유량 150cc/min에서 PSF막의 경우 95.9%이고 PC막의 경우 67.8%를 나타냈다. $CF_4/SF_6$를 제외한 $N_2/SF_6$와 $O_2/SF_6$의 실제 선택도는 PSF막이 PC막보다 더 높게 나타났다.

• 한국결정성장학회지
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• 제5권4호
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• pp.351-357
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• 1995

$CF_4$ 플라즈마 분위기에서 반응성 이온식각된 알루미늄의 표면을 XPS 분석하였다. 알루미늄의 표면에$AlF_3$가 형성되었으며 표면에서의 깊이가 깊어질수록 Al - F 결합에 의한 $Al_{2p}$ peak 강도가 감소하고 금속 알루미늄 결합에 의한 $Al_{2p}$ peak 강도가 증가하였다. 입자의 충돌에 의해서 표면원자들이 mixing 됨으로써 알루미늄의 표면에 50~100 $\AA$ 정도의 두께를 가진 $AlF_x$ 층이 형성되는 것으로 분석되었다. 같은 조건에서 반응성 이온식각된 알루미늄 산화막의 경우에는 mixing 효과가 알루미늄보다 작으므로 상대적으로 얕은 범위(10~20 $\AA$)에서 F가 O를 치환하여 $AlF_x$층이 형성되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.171-174
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• 2002

The barium strontium titannate (BST) thin films were etched in $CF_{4}/Ar$ inductively coupled plasma (ICP). The high etch rate obtained at a $CF_{4}(20%)/Ar(80%)$ and the etch rate in pure argon was twice higher than that in pure $CF_{4}$. This indicated that BST etching is sputter dominant process. It is impossible to avoid plasma-induced damages by the energetic particles in the plasma and the nonvolatile etch products. The plasma damages were evaluated in terms of leakage current density, residues on the etched sample, and the changes of roughness. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. In addition, there are appeared a nonvolatile etch byproductsand from the result of X-ray photoelectron spectroscopy (XPS). After annealing at ${600^{\circ}C}$ for 10 min in $O_{2}$ ambient, the increased leakage current density, roughness and nonvolatile etch byproducts reduced. From the this results, the plasma induced damage recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.