• Journal of Information Display
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• v.3 no.2
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• pp.6-12
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• 2002

In order to achieve white emission from organic light emitting devices (OLEDs), five distinct structures were fabricated and tested. The white emission was obtained using two different color-emitting materials (yellow from rubrene-doped $Alq_3$ and blue from DPVBi) with or without a carrier-blocking layer. For enhancing the red emission, two types of devices with three-color emitting materials were fabricated. The white emission, close to the CIE coordinate of (0.3,0.3), was achieved by using two blocking layers as well that as without a blocking layer. This paper covers the subject of controlling the location of exciton recombination zone. It has been found that there is a trade-off in that the devices with three color emitting layers do not show as much luminescence efficiency compared to those with two color emitting layers, but rather, show distinct red emission in the resultant emission spectra. The highest power efficiency was measured to be 1.15lm/W at 2,000 $cd/m^2$ for a structure with two color-emitting layers.

• Journal of the Korean Ceramic Society
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• v.20 no.3
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• pp.236-242
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• 1983

The purpose of present study is to find the structures physical properties and their inter-relations in the system of (60-x) PbO.xMO.$40B_2O_3$ glasses where MO represents for ZnO and CdO. The experiments such as differential thermal analysis infrared spectral analysis X-ray diffraction analysis density and thermal expansion measurements have been done. From infrared spectral analysis the structural units of glasses and the corresponding crystallized glasses were com-posed of $BO_3$ triangles and $BO_4$ tetrahedra. These basic units found in $PbO-B_2O_3$ binary glass system did not charge even though the divalent metallic oxides were substituted for PbO. The structures of these ternary glasses were more coalescenced than $PbO-B_2O_3$ binary glass system. This fact was supported bydecrease in thermal expansion coeffici-ent and molar volume with substitution of divalent metallic oxide for PbO. Crystalline phases obtained from the heat treatment of the $PbO-ZnO-B_2O_3$ glasses were 4PbO.2ZnO.$5B_2O_3$ PbO.2ZnO.$B_2O_3$ and unknown phases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.726-730
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• 2007

Two dimensional photonic crystals (2D PCs) have been fabricated by a double exposure holographic method using a He-Cd laser with a wavelength of 442nm. The arrays of the 2D PCs exhibit variable lattice structures from square to triangle according to a change of rotating angle $({\gamma})$ for double exposure beams. In addition, the period and filling factor of PCs as well as the forms (dot or antidot) could be controlled by experimental conditions. $A l.18-{\mu}m-thick$ resist was spin-coated on Si substrate and the 1st holographic exposure was carried out at incident angle $({\theta})$ of $11^{\circ}$. Then the sample was rotated to ${\gamma}=45^{\circ}{\sim}90^{\circ}$ and the 2nd holographic process was performed at ${\theta}=11^{\circ}$. The variation of diffraction efficiency during the exposure process was observed using a He-Ne laser in real time. The images of 2D PCs prepared were analyzed by SEM and AFM. We believe that the double holographic method is a tool suitable to realize the 2D PCs with a periodic array of large area.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.131-138
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• 2011

We fabricated distributed feedback InGaAsP/InP laser diodes for optical fiber communication module and characterized the lasing properties in continuous wave operation. The active layer of 7-period InGaAsP(1.127 eV)/InGaAsP(0.954 eV) multi-quantum well structure was grown by the metal-organic chemical vapor deposition. The grating for waveguide was also fabricated by the implementation of the Mach-Zehender holographic method of two laser beams interference of He- Cd laser and the fabricated laser diode has the dimension of the laser length of $400{\mu}m$ and the ridge width of $1.2{\mu}m$. The laser diode shows the threshold current of 3.59 mA, the threshold voltage of 1.059 V. For the room-temperature operation with the current of 13.54 mA and the voltage of 1.12 V, the peak wavelength is about 1309.70 nm and optical power is 13.254 mW.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1299-1304
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• 2007

New sulfur functionalized cyclopentadiene ligands, 1-[2-(thioanisole)]-2,5-dimethylcyclopentadiene (3), 1-[2- (thioanisole)]-2,3,5-trimethylcyclopentadiene (4), and 1-[2-(thioanisole)]-2,3,4,5-tetramethylcyclopentadiene (5), were prepared. In these ligands, the S-donor atom is connected to a cyclopentadiene ring by a rigid phenylene spacer. CpCo(III)-diiodo half-sandwich complexes (6-8) were obtained from reaction the ligands (3- 5) with Co2(CO)8, followed by treatment of I2. Substitution reaction of CpCo(III)-diiodo complexes with MeLi yielded the corresponding CpCo(III)-dimethyl complexes (9-11). Further transformation to the corresponding cationic cobalt complexes (12-14) were achieved by reaction of the CpCo(III)-dimethyl complexes with HB(ArF)4·2Et2O and trapping with CD3CN. The new sulfur functionalized cyclopentadiene ligands having a rigid phenylene spacer and the corresponding cobalt complexes were characterized by 1H, 13C and 19F NMR spectroscopy. The diiodo Complex 6 was also characterized by a single crystal X-ray diffraction method.

• Journal of the Korean Applied Science and Technology
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• v.18 no.3
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• pp.186-190
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• 2001

By fabricating the organic light-emitting devices (OLEDs) based on phosphorescent material, the internal quantum efficiency can reach 100%, compared to 25% in the case of the fluorescent material. Thus, the phosphorescent OLEDs have recently been extensively studied and showed higher internal quantum efficiencies then the conventional OLEDs. In this study, we investigated the characteristics of the phosphorescent OLEDs, with the green emitting phosphor, $Ir(ppy)_{3}$, (tris(2-phenylpyridine)iridium). The devices with a structure of $ITO/TPD/Ir(ppy)_{3}$ doped in the host material $/BCP/Alq_{3}/Li:Al/Al$ were fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of $Ir(ppy)_{3}$, we fabricated several devices and investigated the device characteristics. OLEDs doped into BCP by 10% showed the best characteristics. For 10% doped OLEDs, the maximum luminance of was over 10000 $cd/m^{2}$, and the maximum power efficiency was 7.14 lm/W.

• Bulletin of the Korean Chemical Society
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• v.30 no.8
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• pp.1839-1844
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• 2009

A 20-residue hybrid peptide CA(1-8)-MA(1-12) (CAMA) incorporating residues 1-8 of cecropin A (CA) and residues 1-12 of magainin 2 (MA) has high antimicrobial activity without toxicity. To investigate the effects of the total positive charges of CAMA on the antibacterial activity and toxicity, a hybrid peptide analogue (CAMA-syn) was designed with substitutions of $Ile^{10}\;and\;Ser^{16}$ with Lys. According to CD spectra, structure of CAMA-syn with increase of cationicity was very similar to that of CAMA in DPC micelle. CAMA-syn showed antimicrobial activity similar with CAMA while CAMA-syn has no hemolytic activity and much lower cytotoxicity against RAW 264.7 macrophage cells than CAMA. Also, CAMA and CAMA-syn significantly inhibited NO production by LPSstimulated RAW264.7 macrophage at 10.0∼20.0 $\mu$M. CAMA-syn displayed salt resistance on antimicrobial activity against Escherichia coli at the physiological concentrations of $CaCl_2\;and\;MgCl_2$. The combination studies of peptides and antibiotics showed that CAMA-syn has synergistic effects with synthetic compound and flavonoid against Enterococcus faecalis and VREF. CAMA-syn can be a good candidate for the development of new antibiotics with potent antibacterial and synergistic activity but without cytotoxicity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.81-85
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• 2009

We has been analysed optical properties of OLED(organic light emitting diode) and characteristics of ITO(Indium Tin Oxide) in terms of $O_2$ plasma treatment for manufacturing high efficiency OLED, RF power of $O_2$ plasma was changed 25, 50, 100, 200 W. $O_2$ gas flow, gas pressure and treatment time were fixed. Sheet resistance and surface roughness of ITO were measured by Hall-effect measurement system and AFM, respectively. The ranges of sheet resistance and surface roughness were $5.5{\sim}6,06\;{\Omega}$ and $2.438{\sim}3.506\;nm$ changing of RF power, respectively, PM(Passive Matrix)OLED was fabricated with the structure of ITO(plasm treatment)/TPD($400\;{\AA}$)/$Alq_3(600\;{\AA})$/LiF($5\;{\AA}$)/Al($1200\;{\AA}$). Turn-on voltage of PMOLED was 7 V and luminance was $7,371\;cd/m^2$ at the RF power of 25 W, $O_2$ plasma treatment of ITO surface was result in lowering the operating voltage and improving luminance of PMOLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.391-394
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• 1998

Electroluminescence is the light emission obtained by an electrical excitation energy passing through a phosphor under an applied high electrical field. EL are paid much attention on flat panel display as a backlight and indicator, which are divided into ACPRL(alternating-current powder electroluminescent) and ACTFEL(alternating-current powder electroluminescent). In this paper, Electric and emission properties on ACPEL are investigated based on ZnS:Cu phosphor. The basic structure on this is ITO glass/phosphor/insulator/ backelectrode, CR-M which has high efficiency on thermal properties and dielectric Properties was introduced and BaTiO$_3$ as a insulating layer in order to increase app1ied electric field on phosphor. Changing on Dielectric and emission Properties was caused by a different viscosity of binder which filled on space between phosphor particle. 60cd/$m^2$ under 60V, 2kHz sinusoidal was gotten from ACPELD prepared in this work.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.776-780
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• 2009

In this study, the opto-electric properties of EL devices with PMN dielectric layer with variation of firing tempereature were investigated. For the PMN dielectric layer process, the paste was prepared by optimization of quantitative mixing of PMN powder, $BaTiO_3$, Glass Frit, $\alpha$-Terpineol and ethyl cellulose. The EL device stack consists of Alumina substrate ($Al_2O_3$), metallic electrode (Au), insulating layer (manufactured PMN paste), phosphor layer (ELPP- 030, ELK) and transparent electrode (ITO), which is well structure as a thick film EL device. The phase transformation properties of PMN dielectric with various firing temperatures of $150^{\circ}C$ to $850^{\circ}C$ was characterized by XRD. Also the opto-electric properties of EL devices with different firing temperature were investigated by LCR meter and spectrometer. We found the best opto-electric property was obtained at the condition of $550^{\circ}C$ firing which is 3432.96 $cd/m^2$ at 1948.3 pF Capacitance, 40 kHz Frequency, 40% Duty, Vth+330 V voltage.