• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.34-36
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• 2008

Highly efficient red and green phosphorescent devices comprising a simple bilayer structure are reported. The driving voltage to reach $1000\;cd/m^2$ is 4.5 V in $Bebq_2:\;Ir(piq)_3$ red phosphorescent device. Current and power efficiency values of 9.66 cd/A and 6.90 lm/W in this bi-layered simple structure PHOLEDs are obtained, respectively. While in $Bepp_2:Ir(ppy)_3$ green phosphorescent device, the operating voltage value of 3.3V and current and power efficiencies of 37.89 cd/A and 35.02 lm/W to obtain a luminance of $1000\;cd/m^2$ are noticed, respectively.

• E2M - 전기 전자와 첨단 소재
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• 제7권1호
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• pp.49-56
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• 1994

Polycrystalline CdS thin films were deposited by using EBE method and its crystal structure, surface morphology, electrical and optical properties as a function of annealing temperature were investigated. It was found that optimum growth conditions were substrate temperature annealing temperature 300[.deg. C]. The films were hexagonal structure preferred(002) plane and maximum grain size was 421[.angs.]. As the results, resistivity and optical transmittance of CdS thin films were $8.3{\times}{10^3}$[.ohm.cm] and 89[%] respectively.

• 한국정보통신학회논문지
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• 제7권5호
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• pp.1032-1037
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• 2003

보론 도핑된 CdS 박막을 chemical bath deposition법으로 증착하고, 도핑농도에 따른 박막의 구조적, 광학적 특성을 조사하였다. 보론 도핑된 CdS 박막은 XRD 분석 결과 (002)면 방향으로 강한 우선성장 방위를 가지며 육방정(hexagonal) 구조로 성장하였다 보론 도핑에 관계없이 모든 시편은 2.3 eV(녹색 발광) 및 1.6 eV(적색 발광) 부근에서 PL peak을 가지며, 도핑 농도가 증가함에 따라 피크 세기는 감소하였다. 보론 도핑에 따라 CdS 박막의 가시광 영역에서의 광투과율은 향상되었고, 밴드 갭은 증가하였다.

• 센서학회지
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• 제6권4호
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• pp.252-257
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• 1997

ITO(indium-tin-oxide)/PPV(poly(p-phenylenevihylene))/음극 전극의 단층구조와 ITO /PVK(poly(N-vinylcarbazole))/PPV/음극전극의 이층구조를 가진 유기 EL(electroluminescence) 소자를 제작하였으며, 전기-광학적 특성을 측정하였다. 실험 결과, 단층구조에서는 PPV막의 열변환 온도를 $140^{\circ}C$에서 $260^{\circ}C$로 증가할수록 최대 휘도가 $118.8\;cd/m^{2}$(20V)에서 $21.14\;cd/m^{2}$(28V)으로 감소하였고, EL 스펙트럼의 최대 피크가 500nm에서 580nm로 이동하였다. 또한, 음극전극의 일함수가 낮을수록 소자의 발광휘도와 주입 전류는 증가되었다. 이층구조에서는 PVK막의 농도가 감소함에 따라 발광휘도가 $70.71\;cd/m^{2}$(32V)에서 $152.7\;cd/m^{2}$(26V)으로 증가하였다.

• Bulletin of the Korean Chemical Society
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• 제34권3호
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• pp.856-862
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• 2013

The photoanode electrode of $TiO_2$ nanotubes (NTs) anchored with ZnS/CdSSe/CdS quantum dots (QDs) was prepared by anodization of Ti metal and successive ionic layer adsorption and reaction (SILAR) procedure. The tuning of the band gap of CdSSe was done with controlled composition of Cd, S, or Se during the SILAR. A ladder-like energy structure suitable for carrier transfer was attained with the photoanode electrode. The power conversion efficiency (PCE) of our solar cell fabricated with the regular array of $TiO_2$ NTs anchored with CdSSe/CdS or CdSe/CdS QDs [i.e., (CdSSe/CdS/$TiO_2NTs$) or (CdSe/CdS/$TiO_2NTs$)] was PCE = 3.49% and 2.81% under the illumination at 100 mW/$cm^2$, respectively. To protect the photocorrosion of our solar cell from the electrolyte and to suppress carrier recombination, ZnS was introduced onto CdSSe/CdS. The PCE of our solar cell with the structure of a photoanode electrode, (ZnS/CdSSe/CdS/$TiO_2$ NTs/Ti) was 4.67% under illumination at 100 mW/$cm^2$.

• Bulletin of the Korean Chemical Society
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• 제26권8호
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• pp.1225-1228
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• 2005

C-terminal fragments of APP (APP-CTs), that contain A$\beta$ sequence, are found in neurotic plaques, neurofibrillary tangles and the cytosol of lymphoblastoid cells obtained from AD patients. CT26, Thr639-Asp664 (TVIVITLVMLKKKQYTSIHH GVVEVD) includes not only the transmembrane domain but also the cytoplasmic domain of APP. This sequence is produced from cleavage of APP by caspase and $\gamma$-secretase. In this study, the solution structure of CT26 was investigated using NMR spectroscopy and circular dichroism (CD) spectropolarimeter in various membrane-mimicking environments. According to CD spectra and the tertiary structure of CT26 determined in TFE-containing aqueous solution, CT26 has an α-helical structure from $Val^{2}\;to\;Lys^{11}$ in TFE-containing aqueous solution. However, according to CD data, CT26 adopts a $\beta$-sheet structure in the SDS micelles and DPC micelles. This result implies that CT26 may have a conformational transition between $\alpha$-helix and $\beta$-sheet structure. This study may provide an insight into the conformational basis of the pathological activity of the C-terminal fragments of APP in the model membrane.

• 전자공학회논문지D
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• 제34D권4호
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• pp.47-53
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• 1997

We fabricated gamma radiation detector using high resistive p-Cd$_{80}$Zn$_{20}$Te grown by high pressure bridgman method and forming au thin film electrode by chemically electroless deposition method. The device of Au/Cd$_{80}$Zn$_{20}$Te/Au is a typical MIM structure. The characteristic of current-voltage showed good linearity to 3kV/cm but it depend on the square of electric field over 3kV/cm. As the results of rutherford backscattering spectroscope(RBS) and auger spectroscope on the Au/Cd$_{80}$Zn$_{20}$Te, Au penetrated to the surface of Cd$_{80}$Zn$_{20}$Te detector absorbed slightly high energy radiation like a few hundred keV and showed good performance to detect low energy gamma ray.mma ray.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.607-608
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• 2005

In this paper, author describe the undoped and $Co^{2+}$(0.5mole%) doped $Cd_4SnSe_6$ single crystals were grown by the chemical transport reaction(CTR) method. The grown single crystals crystallize in the monoclinic structure of space group Cc and have the direct band gap structure. The energy gaps of them are 1.68 eV for $Cd_4SnSe_6$ and 1.50 eV for $Cd_4SnSe_6:Co^{2+}$ at 300K respectively.

• 전자공학회논문지A
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• 제32A권9호
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• pp.121-127
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• 1995

We have analyzed the double insulating layer consisting of anodic oxide and ZnS through TEM experiments. The use of double insulating layer for HgCdTe surface passivation is one of the promising passivation method which has been recently studied deeply and the double insulating layer is formed by the evaporation of ZnS on the top of anodic oxide layer grown in H$_{2}$O$_{2}$ electrolyte. The structure of anodic oxide layer on HgCdTe is amorphous but the structure of oxide layer after the evaporation of ZnS has been changed to micro-crystalline. The interface layer of 150.angs. thickness has been found between ZnS and anodic oxide layer and is estimated to be ZnO layer. The results of analysis on the chemical components of ZnS, the interface layer and anodic oxide layer have showed that Zn has diffused into the anodic oxide layer deeply while Hg has been significantly decreased from HgCdTe bulk to the top of oxide layer. The formation of ZnO interface layer and the change of structure of anodic oxide layer after the evaporation of ZnS are estimated to be defects or to induce the defects which might possibly affect the increase of the positive fixed charges shown in C-V measurements of HgCdTe MIS.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2013년도 추계학술대회 논문집
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• pp.283-285
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• 2013