• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.179-186
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.

• Applied Chemistry for Engineering
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• v.10 no.8
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• pp.1192-1199
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• 1999

The morphology changes of cadmium hydroxide into ${\gamma}$ phase by eletrolytes were carried out to improve the high rate charge and discharge efficiency of pasted cadmium electrodes. KOH solutions with different concentrations of NaOH were used as eletrolytes. It was found that the utilization of active material of cadmium electrode was the best in an electrolyte with 1.82 M NaOH. The amount of ${\gamma}-Cd(OH)_2$ increased in proportion to the concentration of NaOH. The surface area measurement showed that an active material which contained mainly ${\gamma}-Cd(OH)_2$ had a higher specific surface area than an active material of ${\beta}-Cd(OH)_2$. In a sealed cell, the discharge capacity was improved at high rate charge and discharge (1.0 C, 2.0 C) by using an electrolyte with NaOH. Furthermore, these improved performances were maintained up to 500 cycles at 1.0 C rate charge and discharge cycles.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.459-467
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• 2009

$Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.35-38
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• 2003

Polymer light emitting diode (PLED) with an ITO/MEH-PPV/Al structure were prepared by spin coating method on the ITO (indium tin oxide)/glass substrates, using poly(2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene (MEH-PPV) as the light emitting material. The dependence of heat treatment on the electrical and optical properties for the prepared PLED samples were investigated. The luminance decreased greatly from 630 cd/$\m^2$ to 280 cd/$\m^2$ at 10V input voltage as the heating temperature increased from $65^{\circ}C$ to $170^{\circ}C$. In addition, the luminance efficiency was found to be about 2 lm/W for the sample heat treated at $65^{\circ}C$. These results may be related to the interface roughness and/or the formation of an insulation layer, which is caused by the reaction between electrode and MEH-PPV organic luminescent film layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.289.1-289.1
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• 2014

In this study, we made a organic thin film device in MIS(Metal-Insulator-Semiconductor) structure by using PVP (Poly vinyl phenol) as a insulating layer, and CdSe/ZnS nano particles which have a core/shell structure inside. We dissolved PVP and PMF in PGMEA, organic solvent, then formed a thin film through a spin coating. After that, it was cross-linked by annealing for 1 hour in a vacuum oven at $185^{\circ}C$. We operated FTIR measurement to check this, and discovered the amount of absorption reduced in the wave-length region near 3400 cm-1, so could observe decrease of -OH. Boonton7200 was used to measure a C-V relationship to confirm a properties of the nano particles, and as a result, the width of the memory window increased when device including nano particles. Additionally, we used HP4145B in order to make sure the electrical characteristics of the organic thin film device and analyzed a conduction mechanism of the device by measuring I-V relationship. When the voltage was low, FNT occurred chiefly, but as the voltage increased, Schottky Emission occurred mainly. We synthesized CdSe/ZnS and to confirm this, took a picture of Si substrate including nano particles with SEM. Spherical quantum dots were properly made. Due to this study, we realized there is high possibility of application of next generation memory device using organic thin film device and nano particles, and we expect more researches about this issue would be done.

• Journal of the Korean Chemical Society
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• v.21 no.2
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• pp.75-82
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• 1977

The isotope effect of pure liquid on vapor pressure is examined, and the vapor pressure ratios of two different isotopes are calculated. Based on the Significant Structure Theory of Liquids, the effect of molecular weight and the effect of moments of inertia are dominant in ordinary/trans-$d_2$ ethylene isotopes; the effect of hindered rotational zero-point energy is dominant in trans-$d_2$/cis-$d_2$ ethylene isotopes; and the effect of intermolecular potential difference is found in $CH_3OH/CH_3OD$ isotopes. In the isotopes of $CH_4/CD_4,\;SiH_4/SiD_4\;and\;GeH_4/GeD_4$, the weight effect decrease in the order of $CH_4/CD_4 >SiH_4/SiD_4 >GeH_4/GeD_4$.

• Molecules and Cells
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• v.38 no.8
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• pp.715-722
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• 2015

In Gram-negative bacteria in the periplasmic space, the dimeric thioredoxin-fold protein DsbC isomerizes and reduces incorrect disulfide bonds of unfolded proteins, while the monomeric thioredoxin-fold protein DsbA introduces disulfide bonds in folding proteins. In the Gram-negative bacteria Salmonella enterica serovar Typhimurium, the reduced form of CueP scavenges the production of hydroxyl radicals in the copper-mediated Fenton reaction, and DsbC is responsible for keeping CueP in the reduced, active form. Some DsbA proteins fulfill the functions of DsbCs, which are not present in Gram-positive bacteria. In this study, we identified a DsbA homologous protein (CdDsbA) in the Corynebacterium diphtheriae genome and determined its crystal structure in the reduced condition at $1.5{\AA}$ resolution. CdDsbA consists of a monomeric thioredoxin-like fold with an inserted helical domain and unique N-terminal extended region. We confirmed that CdDsbA has disulfide bond somerase/reductase activity, and we present evidence that the N-terminal extended region is not required for this activity and folding of the core DsbA-like domain. Furthermore, we found that CdDsbA could reduce CueP from C. diphtheriae.

• Journal of Korean Society on Water Environment
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• v.38 no.2
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• pp.82-94
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• 2022

In this study, chemically modified biochar (NSBP500, KSBP500, OSBP500) derived from starfish was utilized to improve the adsorption ability of the SBP500 (Starfish Biochar Pyrolyzed at 500℃) in a solution contaminated with heavy metals. According to the biochar modification performance evaluation batch tests, the removal rate and adsorption amount of NSBP500 increased 1.4 times for Cu, 1.5 times for Cd, and 1.2 times for Zn as compared to the control sample SBP500. In addition, the removal rate and adsorption amount of KSBP500 increased 2 times for Cu, 1.8 times for Cd, and 1.2 times for Zn. The removal rate and adsorption amount of OSBP500 increased 5.8 times for Cu. The FT-IR analysis confirmed the changes in the generation and movement of new functional groups after adsorption. SEM analysis confirmed Cu in KSBP500 was in the form of Cu(OH)₂ and resembled the structure of nanowires. The Cd in KSBP500 was densely covered in cubic form of Cd(OH)₂. Lead(Pb) was in the form of Pb₃(OH)₂(CO₃)₂ in a hexagonal atomic layer structure in NSBP500. In addition, it was observed that Zn was randomly covered with Zn₅(CO₃)₂(OH)₆ pieces which resembled plates in KSBP500. Therefore, this study confirmed that biochar removal efficiency was improved through a chemical modification treatment. Accordingly, adsorption and precipitation were found to be the complex mechanisms behind the improved removal efficiency in the biochar. This was accomplished by electrostatic interactions between the biochar and heavy metals and ion exchange with Ca²⁺.

• Macromolecular Research
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• v.12 no.6
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• pp.604-607
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• 2004

We report an important and useful method for preparing ${\omega}-sulfonated$ polystyrene-stabilized cadmium sulfide (CdS) nanoclusters. The ${\omega}-sulfonated$ polystyrene $(M_n\;=\;5000\;g/mol)$ was prepared successfully through chain-end sulfonation of poly(styryl)lithium using 1,3-propanesultone; the resulting polymer was used successfully as a polymeric stabilizing agent for the preparation of semiconductor CdS nanoclusters by reduction of cadmium acetate in a mixture of toluene and methanol (9:1, v/v). The nanoclusters that formed were characterized by a combination of transmission electron microscopy, X-ray diffraction, and UVN is spectroscopic analysis. The ${\omega}-sulfonated$ polystyrene-stabilized CdS nanoclusters synthesized in this study exhibited the cubic phase (zinc-blende phase) structure in the range of 2-8 nm.

• Journal of the Korean Magnetic Resonance Society
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• v.20 no.1
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• pp.22-26
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• 2016

FANCJ is a DNA helicase which contributes genome stability by resolving G-quadruplex DNA from 5' to 3' direction. In addition to main ATPase helicase core, FANCJ has the protein binding region at its C-terminal part. BRCA1 and BLM are the binding partner of FANCJ and these protein-protein interactions contribute genomic stability and the proper response to replication stress. As the first attempt for studying FANCJ-BLM interaction, we prepared BLM binding region of FANCJ and characterized with CD and NMR spectroscopy. FANCJ (881-941) with N-ter 6xHis was purified as the oligomer. Secondary structure prediction based on CD data revealed that FANCJ (881-941) composed with ${\beta}$ sheet, turn and coils.$^1H-^{15}N$ HSQC spectra showed nonhomogeneous peak intensities with less number of peaks comparing than the number of amino acids in the construct. It indicated that optimization should be necessary for detailed further structural studies.