• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.135.2-135.2
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• 2014

Photon conversion technology for thin film solar cells is reviewed. The high-energy photons which are hardly absorbed in solar cells can be transformed the low energy photon by the photon conversion process such as down conversion or down shift, which can improve the solar cell efficiency over the material limit. CdSe-based quantum dot materials commonly used in LED can be used as the photon conversion layer for Si thin film solar cells. The photon conversion structure of CdSe-based quantum dot for Si thin film solar cells will be presented and the pros and cons for the Si thin film solar cells integrated with the photon conversion layers will be discussed.

• 정보저장시스템학회:학술대회논문집
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• 정보저장시스템학회 2005년도 추계학술대회 논문집
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• pp.235-240
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• 2005

In this paper, vibration suppression of a CD-ROM main base with piezoelectric shunt circuit is studied. Admittance is introduced to predict the performance of piezoelectric shunt damping. Numerical admittance obtained by commercial finite element code, ANSYS, correlates well with experimentally measured one. Multi-mode piezoelectric shunt damping is realized based on the target mode and frequencies obtained by the admittance analysis. Experimental results prove that admittance of the piezoelectric structure is capable of predicting the performance of piezoelectric shunt damping and the vibration of the main base with the piezoelectric patches is reduced effectively.

• EDISON SW 활용 경진대회 논문집
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• 제4회(2015년)
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• pp.292-295
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• 2015

The effect of Ligand Binding energy in quantum rod (CdS/ZnS) plays a critical role in anisotropic growth. As mimicking large chain of ligands and using the head of the chain, I plan to bind the quantum rod and ligands so that it can grow well consequently. So the ultimate goal of this study is on how ligand binding can affect the growth of this quantum rod. There are preferred surfaces between the quantum rod and ligands, and we empirically know that ligands which bind the quantum rod; Phosphoric oxide (PO), Phosphoric acid(PA), Carboxylic acid(CA), Trimethylamine(TMA), have strong tendency to be attached on the surfaces of CdS/ZnS; ($11{\bar{2}}0$), ($10{\bar{1}}0$), ($000{\bar{1}}$), (0001). I virtually bond the surface and the ligands, and calculated the ligand binding energy after optimizing their structure, utilizing EDISON simulator. After all, I figured out how they are linked each other and how the quantum rod grows.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.693-699
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• 1998

In this work $Cd_4GeS_6:Co^{2+}$(0.5mole%) single crystals were grown by the chemical transporting reactiov(CTR) method using high purity(6N) elements. The grown single crystals crystallized in a monoclinic structure(space group Cc). The direct optical energy gap of this single crystals was found to be 2.445eV at 300K and the temperature dependence of optical energy gap was fitted well to Varshni equation. But at temperatures lower than 70K an anomalous temperature dependence of the optical energy gap was obtained. This anomalous temperature dependence accored well with the anomalous temperature dependence of the unit cell volume. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gaps.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.218.2-218.2
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• 2013

In this study, CdS thin films were deposited onto glass substrates by radio frequency magnetron sputtering. The films were grown at various substrate temperatures in the range of 100 to $250^{\circ}C$. The effects of substrate temperatures on the structural and optical properties were examined. The XRD analysis revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase. The percentages of hexagonal structured crystallites in the films were seen to be increased by increasing substrate temperatures. The film grown at $250^{\circ}C$ showed a relatively high transmittance of 80% in the visible region, with an energy band gap of 2.45 eV. The transmittance date analysis indicated that the optical band gap was closely related to the substrate temperatures.

• 정보저장시스템학회논문집
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• 제2권1호
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• pp.7-12
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• 2006

In this paper, vibration suppression of a CD-ROM main base with piezoelectric shunt circuit is studied. Admittance is introduced to predict the performance of piezoelectric shunt damping. Numerical admittance obtained by commercial finite element code, ANSYS, correlates well with experimentally measured one. Multi-mode piezoelectric shunt damping is realized based on the target mode and frequencies obtained by the admittance analysis. Experimental results prove that admittance of the piezoelectric structure is capable of predicting the performance of piezoelectric shunt damping and the vibration of the main base with the piezoelectric patches is reduced effectively.

• 반도체디스플레이기술학회지
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• 제8권4호
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• pp.15-19
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• 2009

A high efficient organic red light emitting device with structure of DNTPD/TAPC/$Bebq_2$ :[$(pq)_2Ir(acac)$, SFC-411]/SFC-137 was fabricated on the plastic substrate, which can be applied in the fields of flexible display and illumination. In the device structure, N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD] as a hole injection layer and 1,1-bis-(di-4-tolylaminophenyl) cyclohexane [TAPC] as a hole transport were used. Bis(10-hydroxybenzo[h]quinolinato) beryllium complex [$Bebq_2$] was used as a light emitting host material. The host material, $Bebq_2$ was doubly doped with volume ratio of 7% iridium(III)bis-(2-phenylquinoline)acetylacetonate[$(pq)_2$Ir(acac)] and 3% SFC-411[red phosphor dye coded by the proprietary company]. And then, SFC-137 was used as an electron transport layer. The luminous intensity and current efficiency of the fabricated device were $22,780\;cd/m^2$ at 9V and 17.3 cd/A under $10,000\;cd/m^2$, respectively. The maximum current efficiency of the device was 22.4cd/A under $580\;cd/m^2$.

• 한국진공학회지
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• 제10권1호
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• pp.16-21
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• 2001

4원 화합물 반도체인 $Ag_2CdSnSe_4$ 및 $Ag_2CdSnSe_4$:$CO^{2+}$ 단결정을 화학수송법으로 성장시켜 광학적 특성을 조사하였다. 성장된 결정들은 wurtzite 결정구조로서 격자상수는 각각 a = 4.357 $\AA$, c = 7.380 $\AA$($Ag_2CdSnSe_4$:$CO^{2+}$)이었다. 298k에서의 광 흡수 측정으로부터 구한 에너지 띠 간격은 순수한 $Ag_2$CdSnSe의 경우 1.21eV, cobalt 불순물로 첨가한 $Ag_2CdSnSe_4$의 경우 1.02ev이었으며, cobalt를 불순물로 첨가함에 따라 190meV의 에너지 띠 간격의 감소를 보였다. $Ag_2CdSnSe_4$ 결정의 광 흡수 스펙트럼에서 4개의 흡수 피크들을 관측하였으며, 이들 피크 들은 $T_d$결정장내에서 스핀 - 궤도결합효과에 의한 $Co^{2+}$ 이온의 분리된 준위사이의 전자전이에 의한 것으로 설명되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.144-145
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• 2009

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the poly crystal source of $CdGa_2Se_4$ at $630\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27\;\times\;10^{17}\;cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - ($7.721\;{\times}\;10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasi cubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_{11}$-exciton peaks.

• 태양에너지
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• 제17권2호
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• pp.55-66
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• 1997

CdTe/CdS 태양전지 제작에 필요한 다결정 CdS 박막을 ITO 전도 유리기판위에 SSD법, SPD법 및 CBD법 으로 제작하고 열처리 한 후 그 결정구조와 광학적 특성을 조사하였다. 박막은 모두 Wurtzite 구조를 보였고 SSD법과 CBD법의 박막은 $0.5{\mu}m$ 크기의 CdS 입자가 불규칙적으로 형성되어 증착되어 있음을 보였고, $400^{\circ}C$로 진공중에서 열처리 할 때 입자의 크기가 약간 증가하였다. SPD법의 박막은 (002)방향으로 결정이 성장되고 입자의 크기가 $0.1-0.3{\mu}m$ 이었다. 에너지 밴드갭 및 결함 상태를 광학적 흡수, 광 루미니센스, 라만 및 광 열 편기 스펙트럼(PDS) 측정을 통해 조사하였다.