• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.217-220
• /
• 1995

By substituting Cd$\^$2+/ into both A-site and B-site in PNN-PZ-PT ternary perovskite material, it is possible to determine the effects of the substitution site of Cd$\^$2+/ on sintering behavior. Sintering was performed in the temperature range from 1000$^{\circ}C$ to 1300$^{\circ}C$. The substitution site of Cd$\^$2+/ is identified by XPS spectra. Although Cd$\^$2+/ is substituted into both A-site and B-site in PNN-PZ-PT, Cd$\^$2+/ prefers A-site to B-site. The density is influenced by substitution site of Cd$\^$2+/. If Cd$\^$2+/ replaces Pv$\^$2+/, weight gain is observed during sinterig process. On the contrary, if Cd$\^$2+/ replaces Ni$\^$2+/, weight loss is promoted during sintering. From these weight changes, it is believed that Cd$\^$2+/ changes the bonding strength between B-site cation and oxygen of octahedron in perovskite structure. The changes of lattice parameters as a function of Cd$\^$2+/ content were consistent with those of the bonding strength. The densities of A-site-doped compositions were higher than those of B-site-doped composition.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.3
• /
• pp.185-188
• /
• 2000

The dissociation of excitons bounds to neutral accepter in CdTe single crystal was investigated by measurement of temperature dependence of the photoluminescence spectra. The binding energies of CdTe single crystal were determined by PL spectrum at 12K. The free exciton (X) binding energy, the exciton binding energy on neutral donor ($D^{\circ}$, X), and the exciton binding energy on neutral acceptor ($A^{\circ}$, X) were 10 meV, 3.49 meV, and 7.17 meV respectively. From the value of activation energy of ($A^{\circ}$, X), we could show that the dissociation of ($A^{\circ}$, X) is attributed to free exciton.

• Korean Journal of Materials Research
• /
• v.7 no.7
• /
• pp.618-622
• /
• 1997

상온에서 측정한 Cd$_{x}$Ni$_{1-x}$Fe$_{2}$O$_{4}$의 Mossbauer 스펙트럼은 조성비에 따라 x값이 0.4이하인 시료에서는 준강자성에 의한 여섯개의 공명 흡수선, x값이 0.5인 시료에서는 이완된 형태의 공명흡수선, 그리고 x값이 0.6시료인 상자성에 의한 두개의 공명 흡수선이 나타났다. Cd$_{x}$Ni$_{1-x}$Fe$_{2}$O$_{4}$의 x값이 0.4이하인 시료의 초미세 자기장(H$_{hf}$)과 x값이 0.6 이상인 시료의 사중극자 분열치 (Q.S.)는 Cd농도가 증가함에 따라 감소한다. 시료의자기적 성질에 따른 이성질체 이동치(I.S.)의 차이는 있으나, Ni와 Cd이온의 농도에 따른 뚜렷한 의존성은 나타나지 않았다.다.

• Journal of the Korean Vacuum Society
• /
• v.16 no.3
• /
• pp.192-196
• /
• 2007

ZnSe/CdSe/ZnSe single quantum wells with different well thickness were grown by hot wall epitaxy. The quantum well thicknesses were measured by TEM. The critical thickness of single quantum well layer was found to be about $9{\AA}$ from the intensities and the full-width at half maximum of photoluminescence(PL) spectra. When the thickness of quantum wells was less than the critical thickness, the Stoke's shift was confirmed from the comparison between PL and photoluminescence excitation spectra, and it may be due to the exciton binding energy. The PL peak energy dependence on the quantum well thickness was coincident with the theoretical values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.79-80
• /
• 2006

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-Insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation. $E_g(T)=2.7116 eV-(7.74{\times}10^{-4} eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and C1-exciton peaks for n = 1.

• Journal of the Korean Chemical Society
• /
• v.48 no.3
• /
• pp.249-253
• /
• 2004

CdS semiconductor quantum dot (QD) structures in aqueous solution are fabricated by using a gamma-ray irradiation technique and their optical absorption spectra are investigated. Cadmium sulfate solution, 2-mercaptoethanol solution, and reducing agent $e^{-}_{aq}$ are employed to produce CdS molecules, leading to CdS quantum dots. The measured linear absorption spectra before and after g-ray irradiation clearly show exciton peaks between 300 nm and 400 nm, which indicate the formation of CdS QD's. It is also observed that the exciton peaks are red-shifted with increasing the g-ray irradiation time from 5 min to 15 min. Therefore, it is concluded that the mean QD sizes can be systematically controlled with the dosage of the g-ray irradiation.

• Journal of the Korean Chemical Society
• /
• v.61 no.4
• /
• pp.185-190
• /
• 2017

One-dimensional CdTe nanorods (NRs) are obtained by the reaction of various Cd precursors with single crystalline Te nanorod templates, which are pre-synthesized from Te precursors by a simple and reproducible solvothermal method. Throughout the process, the diffraction intensity of different crystal facets of single crystalline Te NRs varied with reaction times. Finally, by alloying Cd ions along the axial direction of Te NRs, polycrystalline cubic phase CdTe NRs with diameters of 80-150 nm and length up to $1.2-2.4{\mu}m$ are obtained. The nucleation and growth processes of Te and CdTe NRs are discussed in details, and their properties are characterized by XRD, SEM, TEM, Raman scattering, and UV-vis absorption spectra. It was found that the key elements of synthesizing CdTe NRs such as reaction temperatures and Cd sources will strongly influence the final shape of CdTe NRs.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.7 no.5
• /
• pp.1032-1037
• /
• 2003

Boron-doped CdS thin films were chemically deposited onto glass substrates. X-ray diffraction (XRD), photoluminescence (PL), and Raman techniques were used to evaluate the quality of B-doped CdS films. XRD results have confirmed that B-doped CdS films has a hexagonal structure with a preferential orientation of the (002) plane. The PL spectra for all samples consists of two prominent broad bands around 2.3 eV (green emission) and 1.6 eV (red emission) and the higher doping concentrations gradually decreased the green emission and red emission. Raman analysis has shown that undoped films have structure superior to those of B-doped CdS films. Boron doping into CdS films improved the optical transmittance and increased the optical band gap.

• Journal of Photoscience
• /
• v.9 no.2
• /
• pp.370-372
• /
• 2002

In order to investigate effect of the carotenoids (Car) on aggregation of Bacterochlorophyll (BChl) in chlorosome, we studied the spectral difference in aggregates of BChl e formed in the absence and presence of a few kinds of Car in dimethyl sulfoxide (DMSO) -water solution. The absorption spectra of aggregates made of only BChl e and those made of a mixture of BChl e and Car were almost the same. However, the kinetics and circular dichroism (CD) spectra of aggregate of these were markedly different by kind of Car. Specifically, the rate of aggregation for a mixture of BChl e and isorenietene that contains phenyl as end groupe was faster than that for only BChl e. CD spectra of aggregates made of a mixture of BChl e and isorenietene dramatically changed compared to that made of only BChl e. We propose that BChl might form several kinds of rod-like supramolecular structures to in the presence of some kind of Car in chlorosome.

• Nuclear Engineering and Technology
• /
• v.6 no.1
• /
• pp.9-13
• /
• 1974

The exciton emission spectra of CdS single crystals excited by electrons were measured at 80$^{\circ}$K as a function o: the wave length. The measured dissociation energy of exciton bound to neutral donor was 2.0 meV, compared to the corresponding theoretical value of 2.4 to 3.2 meV. An exciton bound to neutral donor and a longitudinal optical (LO) phonon may not interact, but a free exciton dissociated from a neutral donor and a LO phonon is expected to interact each other. Therefore the origin of the spectra consisting of interaction term was located at the spectrum consisting of a free exciton dissociated from a neutral donor (I$_2$d). From the analysis of the spectra the LO phonon energy of CdS was found to be 40.5 meV.