• Design & Manufacturing
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• 제14권3호
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• pp.17-22
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• 2020

As devices such as smartphones, tablet PC, and wearable devices have been miniaturized, the connectors that go into the devices are also designed to be very small. The connector combines the plug and the receptacle to transfer electricity. As devices are miniaturized, the contact shape is formed by partially thinning the thickness of the raw material of the terminal in order to lower the coupling height of the plug and receptacle. The product used in this study is a receptacle terminal used for 0.4mm pitch board to board connector among fine pitch connectors. When the material thickness is reduced by forging the receptacle terminal, the width change of the pin is checked. To reduce the thickness of the material by forging, pre-notching is applied in the first step, forging in the second step, and notching in the third step. After forming the width dimension of the pin to 0.28 mm in the pre-notching process, in the forging process, the material thickness 0.08 mm and 0.02 mm (25%) were forged and the thickness was changed to 0.06 mm and the width change amount of the pin was measured. The facility produced 10,000 pieces at 400 SPM using a Yamada Dobby (MXM-40L) press, and thirty pins were measured and the average value was shown. After forging by using C5210-H (HP) and NKT322-EH, which are frequently used in connectors, analyze the amount of change in each material. The effect of punching oil on forging is investigated by appling FM-200M, which is highly viscous, and FL-212, fast drying oil. This study aims to minimize mold modification by predicting the amount of material change after forging.

• 디자인학연구
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• 제17권4호
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• pp.241-250
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• 2004

이 논문은 현재에 통용되고 있는 동합금판 C2200, C5210, C7701, C8113 등의 특징 및 용도와 소재의 재질적 특성을 data화하였고, 그 표현의 가능성을 조사하여 수치화하였고, 그 기법실험의 1단계로서 일반접합과 TIG 접합에 대하여, 2단계 실험으로서 망상조직기법과 전해주조기법에 대하여 농하였으며, 이 기법을 응용한, 연구작품의 3가지 사례를 다루었다. 이 때 사용한 동합금은 (주)풍산금속 소재기술연구소 이동우 박사가 지원한 4가지 동합금, 즉 단동, 스프링용 인청동, 스프링용 양백, 백동을 사용하여, 적층기법, 망상조직기법, 융합기법, 전해주조기법을 작품에 따라서 통합 또는 부분적으로 적용시켰다. C2200 의 경우, 황동은 2mm이하의 박판(薄板)에서는 교류 TIG 용접법이 좋으며 그 이상에서는 직류 정극성 TIG 용접법으로, 용접에 의한 잔류 응력부식을 열처리를 250~300도에서 행한다. C5210 의 경우는 고온의 환원성기(還元性氣)중에서도 수소(水素) 취성이 없고 고온에서 O를 흡수하지 않으며, 경화(輕化) 온도도 약간 높아, 용접용으로 매우 적합하다. 일반적으로 Sn을 2-9% P를 0.03-0.4%정도 포함하고 있는데, Sn의 함유량이 증가함에 따라 응고 온도 범위가 광범위해졌으며 용접후의 냉각 시, 열분열 방지에는 TIG용접의 용접속도를 빠르게, 용융지(溶融池)를 작게, 예열 온도는 200도로 하는 것이 좋다. C7701의 경우는 조성범위가 10-20% Ni, 15-30% Zn의 것이 많이 사용된다. 약 30% Zn 이상이 되면(${\alpha}+{\beta}$) 조직이 되어 점성이 낮아지고 냉간 가공성은 저하하나 열간 가공성은 좋다. 양백은 또한 전기저항이 높고 내열, 내식성이 좋다. C8113의 경우는 내해수성, 내마모성이 우수하며 고온 강도가 높고 백동은 10-30% 니켈을 포함하며 완전히 고용(固溶)해서 단상(單相)이 된다. 이 때문에 결정입(結晶粒)도 크게 되기 쉬우며, 구속이 강한 경우 미량의 Pb, P, S라는 분열 감수성이 높아진다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권4호
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• pp.139-143
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• 2005

For application of carbon nano-tube (CNT) as a counter electrode materials of dye-sensitized solar cell (DSSC), the electrochemical behavior of CNT electrode was studied, employing cyclic-voltammetry (C-V) and impedance spectroscopy. Fabrication of CNT-paste and formation of CNT-counter electrode for characteristic measurement have been carried out using ball-milling and doctor blade process, respectively. Unit cell for measurements was assembled using Pt electrode, CNT electrode, and iodine-embedded electrolyte. Field emission-scanning electron microscopy (FE-SEM) was used for structural investigation of CNT powder and electrode. Sheet resistance of electrode was measured with 4-point probe method. Electrochemical properties of electrode, C-V and impedance spectrum, were studied, employing potentiogalvanostat (EG&G 273A) and lock in amplifier (EG&G 5210). As a results, the sheet resistance of CNT electrode is almost similar to that of F-doped SnO2 (FTO) coated glass substrate as approximately 10 ohm/sq. From C-V and impedance spectroscopy measurements, it was found that CNT electrode has high reaction rate and low interface reaction resistance between CNT surface and electrolyte. These results provides that CNT electrode were superior to that of conventional Pt electrode. Particularly, the reaction rate in the CNT electrode is about thrice high than Pt electrode. Therefore. CNT electrode is to be good candidate material for counter electrode in DSSC.

• 한국재료학회지
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• 제4권8호
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• pp.877-887
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• 1994

강도, 소전율, 스프링성, 내열성 및 굽힘 가공성등의 적절한 조화를 갖는 콘넥팅재료를 개발하기 위하여 Cu-Ni-Si-P합금에 대하여 연구하였다. Ni와 Si의 조성을 달리한 3종류의 합금을 용해, 주조하여 약 $900^{\circ}C$에 열간압연 후 수냉하고, 그 후 냉간압연하여 $450^{\circ}C$. $500^{\circ}C$ 및 $550^{\circ}C$에서 시효처리한 후 기계적 성질 변화와 도전율 등을 조사하였다. 고강도와 고존도율의 적절한 조화를 나타내는 Cu-2.7%Ni-0.53% Si-0.029%P 합금을 만들었다. 합금 1을 0.5mm두께의 콘넥팅재료로 가공한 후 여러가지 특성은 인청동(C 5210R-H)과 황동(C2600R-EH)에 비해 우수한 것으로 평가되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.653-656
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• 1999

Effect of $Al_2O_3$ Additives on Microwave Dielectric Properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ (y=0.05, 0.08) Ceramics was investigated. To control of $\tau\;{f}$ on microwave dielectric properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ ceramics $Al_2O_3$ was doped in the composition range of 0 to 0.15 wt%. As a result, dielectric constant was decreased from 94 to 80 but $Q\cdot{f}_0$ value was increased from 4980 to 5210 GHz and temperature coefficient of resonant frequency can be controlled from +9 to -10$ppm^\circ{C}$ as an increase of$Al_2O_3$ doping concentration. Especially, a new microwave dielectric material having $\varepsilon\;_r=84,\;Q\cdot{f}_0=5120\;GHz\;and\;\tau_f=0\;ppm/^\circ{C}$ was obtained at $Al_2O_3$ doping concentration of 0.08 wt%.