• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• Membrane Journal
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• v.24 no.4
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• pp.259-267
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• 2014

PEBAX[poly(ether-block-amide)-ZIF-8(zeolitic imidazolate framework) composite membranes were prepared with different amounts of ZIF-8; 0, 1, 3, 7, 10, and 20 wt%. Gas permeation experiment were performed by varying the temperature of 25, 35, $40^{\circ}C$ under condition $6kgf/cm^2$. Gas permeability of $C_3H_6$, $C_3H_8$ and selectivity ($C_3H_6/C_3H_8$) were investigated by increasing the amount of ZIF-8 in the PEBAX. The gas permeability of $C_3H_6$ and $C_3H_8$ increased as ZIF-8 content increased among 0 to 7 wt% range and decreased among 7 to 20 wt% range. When the ZIF contents of PEBAX-ZIF composite membrane were 7 wt%, the selectivity ($C_3H_6/C_3H_8$) was taken between 3.6 and 3.8 value and also had the lowest activation energy.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.2
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• pp.193-199
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• 2000

The a-C : H films have been grown on the glass substrate by PECVD method, where plasma was generated with a 60 Hz line power source. The growth rate of films is found to be dependent of the partial pressure of $C_2H_2$. This growth rate is a little higher than that in which $CH_4$ instead of $C_2H_2$ is used. The transmittance is also much higher(95%). The optical energy gap of films is in the range of 1.4~1.8eV depending on the partial pressure of $C_2H_2$. However, this energy gap, which is 1.8eV, is found to be independent of the partial pressure of $C_2H_2$ for the thick films above $2000{\AA}$. The carbonization is checked from peak intensities of D ($sp^3$) and G($sp^2$) peaks in Roman spectra. The hydronization and C-H bonding status in films can also be determined from FTIR results. Both the bonding strength of C-H and the ratio of $sp^3$ to $sp^2$ in bonding are found to be slightly dependent of partial pressure of $C_2H_2$. Judging from above results, we can conclude that the best value for partial pressure of $C_2H_2$ in growing process of thick films is about 13.8%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.278-282
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• 2004

The Hydrogenated amorphous carbon(a-C:H) thin films are deposited on silicon with a close field unbalanced magnetron(CFUBM) sputtering systems. The experimental data are obtained on the depositon rate and physical properties of a-C:H films using DC bias voltage and Ar/C$_2$H$_2$ pressure. The depostion rate and the surface roughness decrease with DC bias voltage, but the hardness of the thin films increases with DC bias voltage. And the position of G-peak moves to lower wavenumber indicating an increase in diamond-like carbon characteristics with the lower Ar/C$_2$H$_2$ pressure.

• Journal of Integrative Natural Science
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• v.8 no.4
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• pp.250-257
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• 2015

The crystal structure of the potential active 3-(4-ethylphenyl)-3H-chromeno[4,3-c]isoxazole-3a(4H)-carbonitrile ($C_{19}H_{16}N_2O_2$) has been determined from single crystal X-ray diffraction data. In the title compound crystallizes in the monoclinic space group $P2_1/c$ with unit cell dimension a=6.6869 (8) ${\AA}$, b=15.8326 (19) ${\AA}$ and c= 15.237 (2) ${\AA}$ [${\alpha}=90^{\circ}$, ${\beta}=100.663^{\circ}$ and ${\gamma}=90^{\circ}$]. In the structure chromene, isoxazole and carboxylate are almost coplanar each other. All geometrical parameters revelled that chromene ring of pyran ring adopt sofa conformation. The crystal packing is stabilized by intermolecular C-H...N and C-H...O hydrogen bond interaction.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.393-399
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• 1997

H-SiC single crystals were successfully grown by the sublimation method and the optimum growth conditions were established. The grown SiC crystals were about 33 mm in diameter and 11 mm in length. The micropipe density of the polished SiC wafers was 400/$\textrm{cm}^2$, and the planar defect density was 50/$\textrm{cm}^2$. Raman spectroscopy and DCXRD analysis were used to examine the crystallinity of Acheson seeds and the 6H-SiC wafers. As a result, the crystallinity of the 6H-SiC wafers was better than that of Acheson seeds. For examination of the electrical properties of the undopped 6H-SiC wafers Hall measurements were applied. According to the measurements the carrier concentration was estimated to be $3.91{\times}10^{15}/\textrm {cm}^3$ and doping type of the undopped. 6H-SiC wafers was n-type.

• Korean Journal of Crystallography
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• v.2 no.1
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• pp.12-16
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• 1991

C18H22N4OS, Mr=342.47, monoclinic, P2₁/c,a=11.802(2), b=31.962(2), c=9.829(2)A, β=100.12(1)˚, V=3694.8A3,F(000)=1472, Z=8, Dx=1.246 Mg m-3, Dm=1.17Mg m-3,λ=0.71073 A, μ=0.15mm-1, T=294 K. final R=0.0856 for 3718 observed reflection (Fo>3σ(Fo)) There are two molecules in an asymmetric unit and a major difference between these molecules is in the C(9)-N(1)-C(6)-C(7) torsion angles [58.8(8)˚and 1(1)˚]. Both molecules have intramolecular N(1)-H(10)'N(3) hydrogen bonds [ 2.613(7) and 2.566(7) A] and assume V-shaped conformation with N(2) atoms at the verices. The two independent molecules are linked by the two N(2)-H(11)'S' hydrogen bonds[3.367(5) A and 3.421(4)A] and the dimergen are held together by van der Waals forces.

• Transactions of the Korean Society of Mechanical Engineers
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• v.10 no.1
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• pp.131-137
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• 1986

Cutting oil cools the chip and a tool as well as lubricates the chip-tool interface, the flank and machined surface. Rehbinder effect has been known as a phenomenon, the reduction of mechanical strength, when the metal is exposed to a polar organic environment or the surface of metal is coated with some polar organic substances. About the cause of Rehbinder effect there have been many different ideas by Rehbinder, Shaw, Barlow, Sakida and etc. In this report, the efect of polar organic substance( $C_{6}$ $H_{5}$C $H_{3}$+ $C_{6}$ $H_{4}$(C $H_{3}$)$_{2}$+ $C_{4}$ $H_{9}$OH+ $C_{6}$ $H_{12}$ $O_{2}$) (magic ink) upon the mechanism of chip formation on the orthogonal cutting of copper and mechanical properties of the work material are experimentally discussed with various rake angles. As expected no lubrication action could be noticed, but the shear angle increased and the cutting force and shear strain on the shear plane decreased, therefore the work material must be embrittled under polar organic substance.substance.

• Bulletin of the Korean Chemical Society
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• v.7 no.5
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• pp.385-388
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• 1986

The reaction of cupric nitrate trihydrate with S-2-pyridyl thioates in acetonitrile was studied. The major products were the corresponding carboxylic acids and $[Cu(NO_3)(C_5H_4NS)(C_5H_5NS$)] (Complex A). Sometimes $[Cu(NO_3)(C_5H_4NS)(H_2O$)] was also obtained in addition to Complex A. When Complex A was recrystallized in dimethylsulfoxide, $[Cu(NO_3)(C_5H_4NS)(C_5H_5NS)$ {$(CH_3)_2SO$}$_2]{\cdot}2H_2O$ was crystallized. The structures of these copper complexes and the role of cupric nitrate in the hydrolysis of S-2-pyridyl thioates are discussed.

• Bulletin of the Korean Chemical Society
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• v.13 no.5
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• pp.565-570
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• 1992

The 1,5-sigmatropic rearrangements involving group (X) migration in ${\omega}$(X)-substituted 1,3-pentadiene, $C^1H_2=C^2H-C^3H=C^4H-C^5H_2-X$, where X = H, $CH_3$, $BH_2$, $NH_2$, OH or F, are investigated MO theoretically using the AM1 method. For the migrating groups without lone pair electrons, X = H, $CH_3$, or $BH_2$, the suprafacial pathway is favored, whereas for the migrating groups with lone pair electrons participating in the TS, $X=NH_2$, OH, or F, the antarafacial pathway is favored electronically. However excessive steric inhibition in the antarafacial TS for $X=NH_2$ leads to subjacent orbital controlled suprafacial process. The antarafacial shift of F is relatively disfavored compared to that of OH due to smaller orbital overlap and larger interfrontier energy gap in the TS.