• 전기의세계
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• 제13권1호
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• pp.20-23
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• 1964

본 변환기는 교번자계의 원리에 의한 보통 변환기가 아니고 회전자계의 원리를 이용한 변환기로서 상변환, 주파수변화, A.C.에서 D.C. 전원변환, D.C.에서 A.C. 전원변환, 속도제어, 진상기 등을 얻을 수 있는 경제적이고 능률적인 변환기를 얻을 수 있다. 임의의 다상을 얻을 수 있는 이 변환기는 다상 전원을 필요로 하는 수은정류기 등에 응용할 수 있고 A.C.전원에서 D.C.전원의 대용량전원을 얻어 D.C.전원이 필요로 하는 직류전철의 전원, 직류송전의 전원등에 이용할 수 있고, D.C.전원에서 A.C.전원을 얻어 교류전력기를 운전할 수 있으며 D.C.송전선에서 A.C.로 변환하여 종전의 A.C.배전선에 공급하면 D.C.송전을 이용한 송전손실을 경감시킬수 있고 주파수를 변환하여 속도제어를 하는 등 광범위하게 그 응용이 가능한 것이다.

• 한국응용곤충학회지
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• 제51권4호
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• pp.343-348
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• 2012

복숭아혹진딧물에 기생하는 목화면충좀벌의 발육기간, 머미율, 번데기 사망률, 성비를 20, 25, 30, $25^{\circ}C$ 인큐베이터에서 수행하였다. 실험을 위하여 피망잎이 놓인 콤팩트샤레를 사용하였다. 각각의 4개 온도에서 발육단계별로 복숭아혹진딧물을 사육하였고 기생을 유도하기 위하여 12시간 동안 목화면충좀벌에 제공하였다. 목화면충좀벌의 알에서 성충까지 발육기간은 $20^{\circ}C$ 18.3일, $25^{\circ}C$ 14.7일, $30^{\circ}C$ 10.4일, $35^{\circ}C$ 9.3일이었다. 복숭아혹진딧물에 기생한 목화면충좀벌의 머미율은 $20^{\circ}C$와 $25^{\circ}C$, 1령과 2령에서 가장 높았으나 $30^{\circ}C$와 $25^{\circ}C$에서는 3령충에서 84.4~85.0%로 가장 높았다. 목화면충좀벌의 기주섭식률은 $20{\sim}35^{\circ}C$까지 각각 12.5%, 17.3%, 16.0%, 10.9%였다. 목화면충좀벌 암컷의 성비는 온도별로 각각 49%, 46%, 69%, 60% 였다.

• 대한기계학회논문집A
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• 제34권8호
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• pp.1015-1021
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• 2010

본 연구에서는 반응소결 탄화규소(RS-SiC)의 제조공정 중에서 C/SiC 복합 비율(0.1, 0.3, 0.4, 0.5, 0.6, 0.7, 1.0)이 외부입자충격 손상 거동에 미치는 영향을 평가하였다. 충격시험은 공기총(air-gun)을 사용하였으며, 직경 2 mm 강구를 113 m/s, 122 m/s, 180 m/s의 충격속도로 RS-SiC 판재($20\times20\times3$ mm)에 충격시켜 발생된 링크랙의 직경 변화 및 콘크랙의 발생 거동을 SEM 영상으로 평가하였다. 결과적으로 RS-SiC에 발생한 링크랙의 최대직경이 충격속도가 증가함에 따라 대체로 증가하였지만, C/SiC 복합 비율에 따라서는 급격한 변화를 보였다. 이는 C/SiC 복합 비율에 따라 잔류 Si 함량 및 굽힘강도 변화의 영향으로 볼 수 있다. 특히 C/SiC 복합 비율이 0.4~0.5 범위에서 콘크랙이 발생됨에 따라 링크랙에서 콘크랙의 발생으로 변화되는 충격손상 메커니즘의 임계영역으로 판단할 수 있다. 아울러 콘크랙의 발생 임계영역을 고려할 때, RS-SiC 최적 제조 공정으로서 C/SiC 혼합 비율을 최대 0.3으로 하는 것이 효과적이다.

• 한국미생물학회:학술대회논문집
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• 한국미생물학회 2008년도 International Meeting of the Microbiological Society of Korea
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• pp.23-25
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• 2008

Serum complement proteins comprise an important system that is responsible for several innate and adaptive immune defence mechanisms. There were three well described pathways known to lead to the generation of a C3 convertase, which catalyses the proteolysis of complement component C3, and leads to the formation of C3 opsonins (C3b, iC3b and C3d) that fix to bacteria. A pivotal step in the complement pathway is the assembly of a C3 convertase, which digests the C3 complement component to form microbial-binding C3 fragments recognized by leukocytes. The spleen clears microorganisms from the blood. Individuals lacking this organ are more susceptible to Streptococcus pneumoniae. Innate resistance to S. pneumoniae has previously been shown to involve complement components C3 and C4, however this resistance has only a partial requirement for mediators of these three pathways, such as immunoglobulin, factor B and mannose-binding lectin. Therefore it was likely that spleen and complement system provide resistance against blood-borne S. pneumoniae infection through unknown mechanism. To better understand the mechanisms involved, we studied Specific intracellular adhesion molecule-grabbing nonintegrin (SIGN)-R1. SIGN-R1, is a C-type lectin that is expressed at high levels by spleen marginal-zone macrophages and lymph-node macrophages. SIGN-R1 has previously been shown to be the main receptor for bacterial dextrans, as well as for the capsular pneumococcal polysaccharide (CPS) of S. pneumoniae. We examined the specific role of this receptor in the activation of complement. Using a monoclonal antibody that selectively downregulates SIGN-R1 expression in vivo, we show that in response to S. pneumoniae or CPS, SIGN-R1 mediates the immediate proteolysis of C3 and fixation of C3 opsonins to S. pneumoniae or to marginal-zone macrophages that had taken up CPS. These data indicate that SIGN-R1 is largely responsible for the rapid C3 convertase formation induced by S. pneumoniae in the spleen of mice. Also, we found that SIGN-R1 directly binds C1q and that C3 fixation by SIGN-R1 requires C1q and C4 but not factor B or immunoglobulin. Traditionally C3 convertase can be formed by the classical C1q- and immunoglobulin-dependent pathway, the alternative factor-B-dependent pathway and the soluble mannose-binding lectin pathway. Furthermore Conditional SIGN-R1 knockout mice developed deficits in C3 catabolism when given S. pneumoniae or its capsular polysaccharide intravenously. There were marked reductions in proteolysis of serum C3, deposition of C3 on organisms within SIGN-$R1^+$ spleen macrophages, and formation of C3 ligands. The transmembrane lectin SIGN-R1 therefore contributes to innate resistance by an unusual C3 activation pathway. We propose that in the SIGN-R1 mediated complement activation pathway, after binding to polysaccharide, SIGN-R1 captures C1q. SIGN-R1 can then, in association with several other complement proteins including C4, lead to the formation of a C3 convertase and fixation of C3. Therefore, this new pathway for C3 fixation by SIGN-R1, which is unusual as it is a classical C1q-dependent pathway that does not require immuno globulin, contributes to innate immune resistance to certain encapsulated microorganisms.

• 시멘트
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• 통권66호
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• pp.12-15
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• 1977

석회석과 고로수재 slag을 1.6 : 1로 혼합 분쇄한 원료를 1,450$^{\circ}C$에서 소결하여 고$C_3A$ clinker를 얻었다. 이 clinker 중에는 $C_3S$ 40$\%$, $C_2S$ 31$\%$, $C_3A$ 22$\%$, $C_4AF$ 2$\%$를 함유하고 있으며 보통 크링카 보다 $C_3A$ 함량이 2$\~$3배 정도 높고, clinker 색은 연두색을 띄는 것이 특색이다. 이와 같이 $C_3A$ 함량이 높은 시멘트의 특성 및 제조 가능성을 검토한 결과는 다음과 같다. 1) 석회석과 slag를 1.6 : 1(61.5$\%$ : 38.5$\%$)로 사용할 경우 보통 시멘트 제조시 석회석 사용량 보다 약 28$\%$ 정도 절감되나 고품위의 석회석이 요구된다. 2) 동일 free CaO 0.4$\%$를 기준으로 소성할 경우 고$C_3A$ clinker가 보통 clinker 보다 소성 시간이 20분 단축된다. 3) carbonate 분해열을 비교하면 고$C_3A$ 시멘트 원료가 보통 시멘트 원료보다 116Kcal/$\cal{kg}$-cl 절감된다. 4) $C_3A$ 함량이 높아 가소성이 저하되고 표준연도의 시멘트 paste를 얻기 위하여서는 보통 시멘트 보다 많은 물량이 요구되며 응결시간도 빠르다. 5) Blaine 3,000$cm^3$/g으로 분쇄한 고$C_3A$ 시멘트의 3 일강도는 보통 시멘트 보다 40$\~$50$\cal{kg}$/$cm^3$ 더 높으나 28 일 강도는 다소 저하되는 경향이며 Blaine 5,000$cm^2$/g으로 분쇄한 고$C_3A$ 시멘트는 조강 시멘트와 같은 강도 수준이다.

• Molecular & Cellular Toxicology
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• 제1권2호
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• pp.92-98
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• 2005

DNA microarray analysis of gene expression in toxicogenomics typically requires relatively large amounts of total RNA. This limits the use of DNA microarray when the sample available is small. To confront this limitation, different methods of linear RNA amplification that generate antisense RNA (aRNA) have been optimized for microarray use. The target preparation strategy using amplified RNA in DNA microarray protocol can be divided into direct-incorporation labeling which resulted in cDNA targets (Cy-dye labeled cDNA from aRNA) and indirect-labeling which resulted in cRNA targets (i.e. Cy-dye labeled aRNA), respectively. However, despite the common use of amplified targets (cDNA or cRNA) from aRNAs, no systemic assessment for the use of amplified targets and bias in terms of hybridization performance has been reported. In this investigation, we have compared the hybridization performance of cRNA targets with cDNA targets from aRNA on a 10 K cDNA microarrays. Under optimized hybridization conditions, we found that 43% of outliers from cDNA technique and 86% from the outlier genes were reproducibly detected by both targets hybridization onto cDNA microarray. This suggests that the cRNA labeling method may have a reduced capacity for detecting the differential gene expression when compared to the cDNA target preparation. However, further validation of this discordant result should be pursued to determine which techniques possesses better accuracy in identifying truly differential genes.

• 한국전기전자재료학회논문지
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• 제26권6호
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• pp.441-445
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• 2013

ZnO nanowires on the a-, c- and m-plane oriented 4H-SiC substrates were grown by using a high temperature tube furnace. Ti/Au electrodes were deposited on ZnO nanowires and a-, c- and m-plane 4H-SiC substrates, respectively. The shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. It was found that the growth direction of nanowires depends strongly on growth parameters such as growth temperature and pressure. In this work, The sensitivity of nanowires formed a-, c- and m-plane oriented 4H-SiC gas sensor was measured at $300^{\circ}C$ with CO gas concentration of 80%. The nanowires grown on a-plane oriented 4H-SiC show improved sensing performance than those on c- and m-plane oriented 4H-SiC due to the increased density of nanowire on a-plane 4H-SiC.

• 한국전기전자재료학회논문지
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• 제31권7호
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• pp.475-480
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• 2018

We investigated the tribological properties of amorphous carbon (a-C) films deposited with CrC interlayers of various thicknesses as the adhesive layer. A-C and CrC thin films were deposited using the unbalanced magnetron (UBM) sputtering method with graphite and chromium as the targets. CrC films as the interlayer were fabricated under a-C films, and various structural, surface, and tribological properties of a-C films deposited with various CrC interlayer thicknesses were investigated. With various CrC interlayer thicknesses under a-C films, the tribological properties of CrC/a-C films were improved; the increased film thickness exhibited a maximum high hardness of over 27.5 GPa, high elastic modulus of over 242 GPa, critical load of 31 N, residual stress of 1.85 GPa, and a smooth surface below 0.09 nm at the condition of 30-nm CrC thickness.

• 한국세라믹학회지
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• 제32권10호
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• pp.1194-1202
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• 1995

The influences of TiC additions to the α-SiC on microstructural, mechanical, and electrical properties were investigated. Electrical discharge machinability of SiC-TiC composites was also studied. Samples were prepared by adding 30, 45, 60 wt.% TiC particles as a second phase to a SiC matrix. Sintering of SiC-TiC composites was done by hot pressing under a vacuum atmospehre from 1000 to 2000℃ with a pressure of 32 MPa and held for 90 minutes at 2000℃. Samples obtained by hot pressing were fully dense with the relative densities over 99% except 60wt.% TiC samples. Flexural strength and fracture toughness of the samples were increased with the TiC content. In case of SiC samples containing 45 wt.% TiC, the fracture toughness showed 90% increase compared to that of monolithic SiC sample. The crack propagation and crack deflection were observed with a SEM for etched samples after Vicker's indentation. The electrical resistivities of SiC-TiC composites were measured utilizing the four-point probe. The electrical dischage machining of composites was also conducted to evaluate the machinability.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.237.2-237.2
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• 2016

A pure hafnium-carbide (HfC) coating layer was deposited onto carbon/carbon (C.C) composites using a vacuum plasma spray system. By adopting a SiC buffer layer, we successfully integrated C.C composites with a $100-{\mu}m-thick$ protective coating layer of HfC. Compared to the conventional chemical vapor deposition process, the HfC coating process by VPS showed increased growth rate, thickness, and hardness. The growth behavior and morphology of HfC coatings were investigated by FE-SEM, EDX, and XRD. From these results, it was shown that the addition of a SiC intermediate layer provided optimal surface conditions during the VPS procedure to enhance adhesion between C.C and HfC (without delamination). The thermal ablation test results shows that the HfC coating layer perfectly protected inner C.C layer from thermal ablation and oxidation. Consequently, we expect that this ultra-high temperature ceramic coating method, and the subsequent microstructure that it creates, can be widely applied to improve the thermal shock and oxidation resistance of materials under ultra-high temperature environments.